• Journal of Mechanical Science and Technology
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• v.18 no.2
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• pp.286-293
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• 2004

The air fuel ratios of current gasoline engines are almost controlled by several air flow meters. When CVVT (Continuous Variable Valve Timing) is applied to a gasoline engine for higher engine performance, the MAP (Manifold Absolute Pressure) sensor is difficult to follow the instantaneous air fuel ratio due to the valve timing effect. Therefore, a HFM (Hot Film Flow Meter) is widely used for measuring intake air flow in this case. However, the HFMs are incapable of indicating to reverse flow, the oscillation of intake air flow has an negative effect on the precision of the HFM. Consequently, the various duct configurations in front of the air flow sensor affect the precision of HFM sensitivity. This paper mainly focused on the analysis of the reverse flow, flow fluctuation in throttle upstream and the geometry of intake system which influence the HFM measurement.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.24 no.5 s.176
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• pp.1271-1280
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• 2000

A sensor placement technique to identify structural parameter was developed. Experimental results must be acquired to identify unknown dynamic characteristics of a targeting structure for the comparison between analytical model and real structure. If the experimental environment was not equipped itself properly, it can be happened that some valuable information are distorted or ill-condition can be occurred. In this work the index to determine exciting points was derived from the criterion of maximizing parameter sensitivity matrix and that to choose measurement points was from that of preserving the invariant of sensitivity matrix. This idea was applied to a compressor hull structure to verify its performance. The result shows that the selection of measurement and excitation points using suggested criteria improve the ill-conditioning problem of inverse type problems such , as model updating.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.7
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• pp.30-36
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• 1997

Bump bonded piezoesistive silicon accelerometer was fabricated by the porous silicon micromachining and th eprocess technique of integrated circuit. The output voltage of the accelerometer fabricated on (111)-oreiented Si substrates with n/n$^{+}$n triple layers showed good linear characteristic of less than 1%. The measured sensitivity and the resonant frequency was about 743 .mu.V/g and 2.04 kHz, respectively. And the transverse sensitivity of 5.2% was measured from the accelerometer. Also, to investigate an influence on the output characteristics of the sensor due to bump bonding, the values of the piezoresistors were measured through thermal-cycling test in the temperature variation form -50 to 120.deg. C. Then, there was 0.014% resistance changes about 3.61 k.ohm., so sthe output charcteristics of the sensor was less affected by bump bonding.g.

• 전자공학회논문지 IE
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• v.43 no.3
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• pp.1-5
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• 2006

[ $CaZrO_3$ ] humidity sensors were prepared using the solid-state synthetic method and their humidity sensitive characteristics have been investigated. It was found that the impedance of the humidity sensors decreased with increasing relative humidity and the humidity sensitivity depended on the applied frequencies. The sensitivity of sensor is stable with heat treatment and a negligible hysteresis under cyclic humidity changes is shown, and the activation energy for electrical conduction is reduced with water adsorption.

• Transactions on Electrical and Electronic Materials
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• v.18 no.1
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• pp.25-29
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• 2017

This paper presents a unique pressure sensor design for environmental applications. The design uses a new geometry for a multi bossed beam-membrane structure with a SOI (silicon-on-insulator) substrate and a mechanical transducer. The Intellisuite MEMS CAD design tool was used to build and analyze the structure with FEM (finite element modeling). The working principle of the multi bossed beam structure is explained. FEM calculations show that a sensing diaphragm with Mises stress can provide superior linear response compared to a stress-free diaphragm. These simulation results are validated by comparing the estimated deflection response. The results show that, the sensitivity is enhanced by using both the novel geometry and the SOI substrate.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1472-1473
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• 2008

Polyimide thin films were cured locally using MEMS microhotplates. The polyimide locally cured at temperature over 350$^{\circ}C$ for 1 hour was fully cured. There was no significant difference between polyimide thin films cured in a conventional convection oven and those cured locally on MEMS microhotplates. The locally cured polyimide humidity sensor showed a linearity of 0.9995, a sensitivity of 0.77 pF/%RH, a hysteresis of 0.6 %RH, and a response time of 3s. These results indicate that the locally-cured polyimide films may be used as dielectric material of high speed, highsensitivity humidity sensors.

• Journal of Biomedical Engineering Research
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• v.26 no.6
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• pp.351-356
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• 2005

Respiration measurement method using an ultrasound sensor is influenced very little by an error of inertia and pressure. This device measures the amount and flow of respiration using a delivery speed difference of the ultrasound waves that are a return format by the pneumatic stream that is a flogging of ultrasound waves during transmission and receipt as having used a characteristic of ultrasound waves. This paper examines improving the sensor's sensitivity during transmission and receipt of the signal. Because the measurement must be performed on patients, clinicians need to be sure that it is accurately measuring even very weak breathing.

• Journal of Powder Materials
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• v.19 no.4
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• pp.297-303
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• 2012

In this study, voltammetry system for realizing high sensitivity nano-labeled sensor of detecting heavy metals was designed, and optimal system operating conditions were determined. High precision digital to analog converter (DAC) circuit was designed to control applied unit voltage at working electrode and analog to digital converter (ADC) circuit was designed to measure the current range of $0.1{\sim}1000{\mu}A$ at counter electrode. Main control unit (MCU) circuit for controlling voltammetry system with 150 MHz clock speed, main memory circuit for the mathematical operation processing of the measured current value and independent power circuit for analog/digital circuit parts to reduce various noise were designed. From result of voltammetry system operation, oxidation current peaks which are proportional to the concentrations of Zn, Cd and Pb ions were found at each oxidation potential with high precision.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.435-438
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• 1998

In this paper, Electret is formed to range voltage -5[kV] to -8[kV] by corona charging in PTFE film and sensor is manufactured by method of moments in sensing infra sonic. Charges of charged film are calculated also TSC measurement and induced potential of sensing electrode according to the charges is become aware of computer simulation. Electret Infra Sonic Transducer, which is designed and manufactured according to the potential and electric field simulation in using method of moments, is proved as it is effectively. Because sensitivity that measured under 10[Hz] is that average value of sensitivity rising rate is 6.34 [dB/oct] as average value is $\pm$1 [dB/oct] range -5[kV] to -8[kV] in corona charging film. As a result, it is believed that characteristic of acquired transducer can be application of medical treatment, industry, and animal life researches and the study of noise elimination, what's more, is required.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2002.11a
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• pp.59-63
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• 2002

This paper reports on the fabrication process and characteristics of a ceramic thin-film pressure sensor based on Ta-N strain-gauges for harsh environment applications. The Ta-N thin-film strain-gauges are sputter-deposited on a thermally oxidized micromachined Si diaphragms with buried cavities for overpressure tolerance. The proposed device takes advantage of the good mechanical properties of single-crystalline Si as a diaphragm fabricated by SDB and electrochemical etch-stop technology, and in order to extend the temperature range, it has relatively higher resistance, stability and gauge factor of Ta-N thin-films more than other gauges. The fabricated pressure sensor presents a low temperature coefficient of resistance, high-sensitivity, low non-linearity and excellent temperature stability. The sensitivity is 1.21 ~ 1.097 mV/V.kgf/$\textrm{cm}^2$ in temperature ranges of 25~ $200^{\circ}C$ and a maximum non-linearity is 0.43 %FS.