• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.634-634
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• 2013

Transfer molding methods have a problem that weak adhesion between nanostructures and substrates. It is important to make various nano scale applications, also the stability of nanostructure on substrate is related with device performance. We studied an effect of poly 4-vinylphenol (PVP) as the polymeric adhesion layer between organic nanowires and a Si substrate when the nanowires are transferred by liquid-bridge-mediated nanotransfer molding method (LB-nTM). Their structural stability was examined by optical microscopy, scanning electron microscopy as multiple transfer molding and washing process. Field-effect transistors were fabricated with organic semiconductor nanowires on a polymeric adhesion layer and their electrical properties showed no significant difference as the one without the adhesion layer. As a result, adhesion layer can be used in the washing process and making multi-layer nano-scale patterns.

• Bulletin of the Korean Chemical Society
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• v.34 no.2
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• pp.590-594
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• 2013

Semiconductor CdSe nanowires (NWs) can serve as model systems for investigating the physical properties of one-dimensional (1D) nanostructures and have great potential for applications in electronics and photonic nanodevices. With numerous attractions arisen from their physical properties, CdSe NWs have been synthesized by vapor-liquid-solid (VLS) methods, but they have some limitations of high reaction temperature and low production. Here, we synthesized CdSe NWs via the solution-liquid-solid (SLS) mechanisms using bismuth (Bi) covered substrates as a low-melting point catalyst and compared the products after injecting identical amount of Se and different amount of tributylphosphine (TBP). CdSe NWs have similar diameters but longer lengths with decreasing TBP, so we proposed the role of TBP as a solvent and capping agent of Se.

• Korean Journal of Materials Research
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• v.20 no.4
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• pp.223-227
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• 2010

Recently, one-dimensional semiconducting nanomaterials have attracted considerable interest for their potential as building blocks for fabricating various nanodevices. Among these semiconducting nanomaterials,, $SnO_2$ nanostructures including nanowires, nanorods, nanobelts, and nanotubes were successfully synthesized and their electrochemical properties were evaluated. Although $SnO_2$ nanowires and nanobelts exhibit fascinating gas sensing characteristics, there are still significant difficulties in using them for device applications. The crucial problem is the alignment of the nanowires. Each nanowire should be attached on each die using arduous e-beam or photolithography, which is quite an undesirable process in terms of mass production in the current semiconductor industry. In this study, a simple process for making sensitive $SnO_2$ nanowire-based gas sensors by using a standard semiconducting fabrication process was studied. The nanowires were aligned in-situ during nanowire synthesis by thermal CVD process and a nanowire network structure between the electrodes was obtained. The $SnO_2$ nanowire network was floated upon the Si substrate by separating an Au catalyst between the electrodes. As the electric current is transported along the networks of the nanowires, not along the surface layer on the substrate, the gas sensitivities could be maximized in this networked and floated structure. By varying the nanowire density and the distance between the electrodes, several types of nanowire network were fabricated. The $NO_2$ gas sensitivity was 30~200 when the $NO_2$ concentration was 5~20ppm. The response time was ca. 30~110 sec.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.407-407
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• 2014

Nanotechnology, especially vertically grown silicon nanowires, has gotten great attentions in biology due to characteristics of one dimensional nanostructure; controllable synthetic structure such as lengths, diameters, densities. Silicon nanowires are promising materials as nanoelectrodes due to their highly complementary metal-oxide-semiconductor (CMOS) - and bio-compatibility. Silicon nanowires are so intoxicated that are effective for bio molecular delivery and electrical stimulation. Vertical nanowires with integrated Au tips were fabricated for electrical intracellular interfacing with PC-12 cells. We have made synthesized two types of nanowire devices; one is multi-nanowires electrode for bio molecular sensing and electrical stimulation, and the other is single-nanowires electrode respectively. Here, we demonstrate that differentiation of Nerve Growth Factor (NGF) treated PC-12 cells can be promoted depending on different magnitudes of electrical stimulation and density of Si NWs. It was fabricated by both bottom-up and top-down approaches using low pressure chemical vapor deposition (LPCVD) with high vacuuming environment to electrically stimulate PC-12 cells. The effects of electrical stimulation with NGF on the morphological differentiation are observed by Scanning Electron Microscopy (SEM), and it induces neural outgrowth. Moreover, the cell cytosol can be dyed selectively depending on the degree of differentiation along with fluorescence microscopy measurement. Vertically grown silicon nanowires have further expected advantages in case of single nanowire fabrication, and will be able to expand its characteristics to diverse applications.

• Advances in nano research
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• v.2 no.3
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• pp.157-172
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• 2014

The three-dimensional Nano-Electronic Modeling toolkit (NEMO 3-D) is an open source software package that allows the atomistic calculation of single-particle electronic states and optical response of various semiconductor structures including bulk materials, quantum dots, impurities, quantum wires, quantum wells and nanocrystals containing millions of atoms. This paper, first, describes a software module introduced in the NEMO 3-D toolkit for the calculation of electronic bandstructure and interband optical transitions in nanowires having wurtzite crystal symmetry. The energetics (Hamiltonian) of the quantum system under study is described via the tight-binding (TB) formalism (including $sp^3$, $sp^3s^*$ and $sp^3d^5s^*$ models as appropriate). Emphasis has been given in the treatment of surface atoms that, if left unpassivated, can lead to the creation of energy states within the bandgap of the sample. Furthermore, the developed software has been validated via the calculation of: a) modulation of the energy bandgap and the effective masses in [0001] oriented wurtzite nanowires as compared to the experimentally reported values in bulk structures, and b) the localization of wavefunctions and the optical anisotropy in GaN/AlN disk-in-wire nanowires.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.60-60
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• 2010

1-D nanostructured materials have much more attention because of their outstanding properties and wide applicability in device fabrication. Bismuth oxide($Bi_2O_3$) is an important p-type semiconductor with main crystallographic polymorphs denoted by $\alpha-$, $\beta-$, $\gamma-$, and $\delta-Bi_2O_3$[1]. Due to its unique optical and electrical properties, $Bi_2O_3$ has been extensively investigated for various applications in gas sensors, photovoltaic cells, fuel cells, supercapacitors[2-4]. In this study, $Bi_2O_3$ NWs were grown by two step annealing process: in the first step, after annealing at $270^{\circ}C$ for 10h in a vaccum($3{\times}10^{-6}$ torr), we can obtain the bismuth nanowires. In the second step, after annealing at $300^{\circ}C$ for 2h in $O_2$ ambient, we successfully fabicated $Bi_2O_3$nanowires.

• Korean Chemical Engineering Research
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• v.52 no.2
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• pp.205-208
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• 2014

Here, we reported mass-produced organic nanowires with uniform sizes based on poly(9,9-dioctylflurorene) (PFO), poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT), (regioregular poly(3-hexylthiophene) (P3HT) which are well known as organic semiconductors for opto/electronics applications, using a melt-assisted wetting method with anodic alumina membrane. The conjugated polymer nanowires showed uniformed diameters (D=250~300 nm) and lengths ($L={\sim}30{\mu}m$) with defect free smooth surface regardless of a kinds of semiconductors. In addition, the nanowires were uniformly deposited onto glass substrates by spray-coating method. Under the UV light irradiation, PFO and F8BT nanowires showed blue and yellow emissions, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.2
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• pp.11-17
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• 2020

In this study, Ag-functionalized SnO₂ nanowires are presented for NO₂ gas sensitive sensors at low temperatures (50℃). SnO₂ nanowires were synthesized using vapor-liquid-solid method, and Ag metal particles were functionalized on the surface of SnO₂ nanowires using flame chemical vapor deposition method. As a result of the sensing test about Ag-functionalized SnO₂ nanowires based sensor, the response (R_g/R_a) to 10 ppm NO₂ was 1.252 at 50℃. We believe that metal-functionalizing is a one of good way to increase the feasibility about semiconductor gas sensor.

• Proceedings of the Korean Magnestics Society Conference
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• 2016.05a
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• pp.98-98
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• 2016

• Journal of the Semiconductor & Display Technology
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• v.19 no.4
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• pp.94-98
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• 2020

The core/shell of nanowires (NWs) with Cu-doped CdSe quantum dots were fabricated as an electron transport layer (ETL) for perovskite solar cells, based on ZnO/TiO2 arrays. We presented CdSe with Cu2+ dopants that were synthesized by a colloidal process. An improvement of the recombination barrier, due to shell supplementation with Cu-doped CdSe quantum dots. The enhanced cell steady state was attributable to TiO2 with Cu-doped CdSe QD supplementation. The mechanism of the recombination and electron transport in the perovskite solar cells becoming the basis of ZnO/TiO2 arrays was investigated to represent the merit of core/shell as an electron transport layer in effective devices.