• Title/Summary/Keyword: Semiconductor manufacturing

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A Study on Rotational Alignment Algorithm for Improving Character Recognition (문자 인식 향상을 위한 회전 정렬 알고리즘에 관한 연구)

  • Jin, Go-Whan
    • Journal of the Korea Convergence Society
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    • v.10 no.11
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    • pp.79-84
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    • 2019
  • Video image based technology is being used in various fields with continuous development. The demand for vision system technology that analyzes and discriminates image objects acquired through cameras is rapidly increasing. Image processing is one of the core technologies of vision systems, and is used for defect inspection in the semiconductor manufacturing field, object recognition inspection such as the number of tire surfaces and symbols. In addition, research into license plate recognition is ongoing, and it is necessary to recognize objects quickly and accurately. In this paper, propose a recognition model through the rotational alignment of objects after checking the angle value of the tilt of the object in the input video image for the recognition of inclined objects such as numbers or symbols marked on the surface. The proposed model can perform object recognition of the rotationally sorted image after extracting the object region and calculating the angle of the object based on the contour algorithm. The proposed model extracts the object region based on the contour algorithm, calculates the angle of the object, and then performs object recognition on the rotationally aligned image. In future research, it is necessary to study template matching through machine learning.

Chemical Mechanical Polishing: A Selective Review of R&D Trends in Abrasive Particle Behaviors and Wafer Materials (화학기계적 연마기술 연구개발 동향: 입자 거동과 기판소재를 중심으로)

  • Lee, Hyunseop;Sung, In-Ha
    • Tribology and Lubricants
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    • v.35 no.5
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    • pp.274-285
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    • 2019
  • Chemical mechanical polishing (CMP), which is a material removal process involving chemical surface reactions and mechanical abrasive action, is an essential manufacturing process for obtaining high-quality semiconductor surfaces with ultrahigh precision features. Recent rapid growth in the industries of digital devices and semiconductors has accelerated the demands for processing of various substrate and film materials. In addition, to solve many issues and challenges related to high integration such as micro-defects, non-uniformity, and post-process cleaning, it has become increasingly necessary to approach and understand the processing mechanisms for various substrate materials and abrasive particle behaviors from a tribological point of view. Based on these backgrounds, we review recent CMP R&D trends in this study. We examine experimental and analytical studies with a focus on substrate materials and abrasive particles. For the reduction of micro-scratch generation, understanding the correlation between friction and the generation mechanism by abrasive particle behaviors is critical. Furthermore, the contact stiffness at the wafer-particle (slurry)-pad interface should be carefully considered. Regarding substrate materials, recent research trends and technologies have been introduced that focus on sapphire (${\alpha}$-alumina, $Al_2O_3$), silicon carbide (SiC), and gallium nitride (GaN), which are used for organic light emitting devices. High-speed processing technology that does not generate surface defects should be developed for low-cost production of various substrates. For this purpose, effective methods for reducing and removing surface residues and deformed layers should be explored through tribological approaches. Finally, we present future challenges and issues related to the CMP process from a tribological perspective.

A Study on the Circuit Design Method of CNTFET SRAM Considering Carbon Nanotube Density (탄소나노튜브 밀도를 고려한 CNTFET SRAM 디자인 방법에 관한 연구)

  • Cho, Geunho
    • Journal of IKEEE
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    • v.25 no.3
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    • pp.473-478
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    • 2021
  • Although CNTFETs have attracted great attention due to their ability to increase semiconductor device performance by about 13 times, the commercialization of CNTFETs has been challenging because of the immature deposition process of CNTs. To overcome these difficulties, circuit design method considering the known limitations of the CNTFET manufacturing process is receiving increasing attention. SRAM is a major element constituting microprocessor and is regularly and repeatedly positioned in the cache memory; so, it has the advantage that CNTs can be more easily and densely deposited in SRAM than other circuit blocks. In order to take these advantages, this paper presents a circuit design method for SRAM cells considering CNT density and then evaluates its performance improvement using HSPICE simulation. As a result of simulation, it is found that when CNTFET is applied to SRAM, the gate width can be reduced by about 1.7 times and the read speed also can be improved by about 2 times when the CNT density was increased in the same gate width.

Characterization of AlN Thin Films Grown by Pulsed Laser Deposition with Various Nitrogen Partial Pressure (다양한 질소분압에서 펄스레이저법으로 성장된 AlN박막의 특성)

  • Chung, J.K.;Ha, T.K.
    • Transactions of Materials Processing
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    • v.28 no.1
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    • pp.43-48
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    • 2019
  • Aluminum nitride (AlN) is used by the semiconductor industry, and is a compound that is required when manufacturing high thermal conductivity. The AlN films with c-axis orientation and thermal conductivity characteristic were deposited by using the Pulsed Laser Deposition (PLD). The AlN thin films were characterized by changing the deposition conditions. In particular, we have researched the AlN thin film deposited under optimal conditions for growth atmosphere. The epitaxial AlN films were grown on sapphire ($c-Al_2O_3$) single crystals by PLD with AlN target. The AlN films were deposited at a fixed temperature of $650^{\circ}C$, while conditions of nitrogen ($N_2$) pressure were varied between 0.1 mTorr and 10 mTorr. The quality of the AlN films was found to depend strongly on the $N_2$ partial pressure that was exerted during deposition. The X-ray diffraction studies revealed that the integrated intensity of the AlN (002) peak increases as a function the corresponding Full width at half maximum (FWHM) values decreases with lowering of the nitrogen partial pressure. We found that highly c-axis orientated AlN films can be deposited at a substrate temperature of $650^{\circ}C$ and a base pressure of $2{\times}10^{-7}Torr$ in the $N_2$ partial pressure of 0.1 mTorr. Also, it is noted that as the $N_2$ partial pressure decreased, the thermal conductivity increased.

Scheduling Generation Model on Parallel Machines with Due Date and Setup Cost Based on Deep Learning (납기와 작업준비비용을 고려한 병렬기계에서 딥러닝 기반의 일정계획 생성 모델)

  • Yoo, Woosik;Seo, Juhyeok;Lee, Donghoon;Kim, Dahee;Kim, Kwanho
    • The Journal of Society for e-Business Studies
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    • v.24 no.3
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    • pp.99-110
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    • 2019
  • As the 4th industrial revolution progressing, manufacturers are trying to apply intelligent information technologies such as IoT(internet of things) and machine learning. In the semiconductor/LCD/tire manufacturing process, schedule plan that minimizes setup change and due date violation is very important in order to ensure efficient production. Therefore, in this paper, we suggest the deep learning based scheduling generation model minimizes setup change and due date violation in parallel machines. The proposed model learns patterns of minimizing setup change and due date violation depending on considered order using the amount of historical data. Therefore, the experiment results using three dataset depending on levels of the order list, the proposed model outperforms compared to priority rules.

Trend of Crystallization Technology and Large Scale Research for Fabricating Thin Film Transistors of AMOLED Displays (AMOLED 디스플레이의 박막트랜지스터 제작을 위한 결정화 기술 동향 및 대형화 연구)

  • Kim, Kyoung-Bo;Lee, Jongpil;Kim, Moojin;Min, Youngsil
    • Journal of Convergence for Information Technology
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    • v.9 no.5
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    • pp.117-124
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    • 2019
  • This paper discusses recent trends in the fabrication of semiconducting materials among the components of thin film transistors used in AMOLED display. In order to obtain a good semiconductor film, it is necessary to change the amorphous silicon into polycrystalline silicon. There are two ways to use laser and heat. Laser-based methods include sequential lateral solidification (SLS), excimer laser annealing (ELA), and thin-beam directional crystallization (TDX). Solid phase crystallization (SPC), super grain silicon (SGS), metal induced crystallization (MIC) and field aided lateral crystallization (FALC) were crystallized using heat. We will also study research for manufacturing large AMOLED displays.

Effects of Operating Parameters on Tetrafluoromethane Destruction by a Waterjet Gliding Arc Plasma (워터젯 글라이딩 아크 플라즈마에 의한 사불화탄소 제거에 미치는 운전변수의 영향)

  • Lee, Chae Hong;Chun, Young Nam
    • Applied Chemistry for Engineering
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    • v.22 no.1
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    • pp.31-36
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    • 2011
  • Tetrafluoromethane ($CF_4$) has been used as the plasma etching and chemical vapor deposition (CVD) gas for semiconductor manufacturing processes. However, the gas need to be removed efficiently because of their strong absorption of infrared radiation and the long atmospheric lifetime which cause global warming effects. A waterjet gliding arc plasma system in which plasma is combined with the waterjet was developed to effectively produce OH radicals, resulting in efficient destruction of $CF_4$ gas. Design factors such as electrode shape, electrode angle, gas nozzle diameter, electrode gap, and electrode length were investigated. The highest $CF_4$ destruction of 93.4% was achieved at Arc 1 electrode shape, $20^{\circ}$ electrode angle, 3 mm gas nozzle diameter, 3 mm electrode gap and 120 mm electrode length.

A study on the brownish ring of quartz glass crucible for silicon single crystal ingot (실리콘 단결정 잉곳용 석영유리 도가니의 brownish ring에 대한 연구)

  • Jung, YoonSung;Choi, Jae Ho;Min, Kyung Won;Byun, Young Min;Im, Won Bin;Noh, Sung-Hun;Kang, Nam-Hun;Kim, Hyeong-Jun
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.32 no.3
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    • pp.115-120
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    • 2022
  • A brown ring (hereinafter referred to as BR) on the inner surface of a quartz glass crucible used in the manufacturing process of a silicon ingot for semiconductor wafers was studied. BR is 20~30 ㎛ in size and has an asymmetric brown ring shape. The size and distribution of BR were different depending on the crucible location, and the size and distribution of BR were the largest and most abundant in the round part with the highest crucible temperature during Si ingot growth. BR contains cristobalite, which has a higher coefficient of thermal expansion than quartz glass, so it is considered that surface cracks appear. The color development of BR and pin holes are presumed to be due to oxygen vacancies.

The fabrication of bulk magnet stacked with HTS tapes for the magnetic levitation

  • Park, Insung;Kim, Gwantae;Kim, Kyeongdeok;Sim, Kideok;Ha, Hongsoo
    • Progress in Superconductivity and Cryogenics
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    • v.24 no.3
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    • pp.47-51
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    • 2022
  • With the innovative development of bio, pharmaceutical, and semiconductor technologies, it is essential to demand a next-generation transfer system that minimizes dust and vibrations generated during the manufacturing process. In order to develop dust-free and non-contact transfer systems, the high temperature superconductor (HTS) bulks have been applied as a magnet for levitation. However, sintered HTS bulk magnets are limited in their applications due to their relatively low critical current density (Jc) of several kA/cm2 and low mechanical properties as a ceramic material. In addition, during cooling to cryogenic temperatures repeatedly, cracks and damage may occur by thermal shock. On the other hand, the bulk magnets made by stacked HTS tapes have various advantages, such as relatively high mechanical properties by alternate stacking of the metal and ceramic layer, high magnetic levitation performance by using coated conductors with high Jc of several MA/cm2, consistent superconducting properties, miniaturization, light-weight, etc. In this study, we tried to fabricate HTS tapes stacked bulk magnets with 60 mm × 60 mm area and various numbers of HTS tape stacked layers for magnetic levitation. In order to examine the levitation forces of bulk magnets stacked with HTS tapes from 1 to 16 layers, specialized force measurement apparatus was made and adapted to measure the levitation force. By increasing the number of HTS tapes stacked layers, the levitation force of bulk magnet become larger. 16 HTS tapes stacked bulk magnets show promising levitation force of about 23.5 N, 6.538 kPa at 10 mm of levitated distance from NdFeB permanent magnet.

A Method to Adjust Cyclic Signal Length Using Time Invariant Feature Point Extraction and Matching(TIFEM) (시불변 특징점 추출 및 정합을 이용한 주기 신호의 길이 보정 기법)

  • Han, A-Hyang;Park, Cheong-Sool;Kim, Sung-Shick;Baek, Jun-Geol
    • Journal of the Korea Society for Simulation
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    • v.19 no.4
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    • pp.111-122
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    • 2010
  • In this study, a length adjustment algorithm for cyclic signals in manufacturing process using Time Invariant Feature point Extraction and Matching(TIFEM) is proposed. In order to precisely compensate the length of cyclic signals which have irregular length in the middle of signal as well as in the full length more feature points are needed. The extracted feature must involve information about the pattern of signal and should have invariant properties on time and scale. The proposed TIFEM algorithm extracts features having the intrinsic properties of the signal characteristics at first. By using those extracted features, feature vector is constructed for each time point. Among those extracted features, the only effective features are filtered and are chosen such as basis for the length adjustment. And then the partial length adjustment is performed by matching feature points. To verify the performance of the proposed algorithm, the experiments were performed with the experimental data mimicking the three kinds of signals generated from the actual semiconductor process.