• Korean Journal of Optics and Photonics
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• v.33 no.5
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• pp.210-217
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• 2022

In this paper, a study is conducted on the acceptable tolerance of an alignment device to reduce the optical loss caused by the alignment tolerance of a window hermetic optical connector. To increase the transmission distance of optical signals and fiber-optic communication systems, it is necessary to maintain and improve the high optical efficiency of the connectors used to bond optical fibers. In the case of the window hermetic optical connector, the optical system is aligned through an alignment device. At this time, since the two connectors are used together, each component is fixed, and further alignment is impossible. The alignment tolerance of the housing system and pin used to align the optical system of the connector causes optical loss, leading to serious problems in the fiber-optic communication system. Thus, to find the acceptable tolerance required for manufacturing the optical-connector alignment device, tolerance analysis is performed on the components of the optical connector, such as the ball lens and the window. We also implement single-mode and multimode optical-connector systems, respectively. Based on the results, we determine an acceptable tolerance value for the alignment device.

• The Korean Journal of Applied Statistics
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• v.35 no.3
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• pp.407-419
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• 2022

The semiconductor fabrication process is complex and time-consuming. There are sometimes errors in the process, which results in defective die on the wafer bin map (WBM). We can detect the faulty WBM by finding some patterns caused by dies. When one manually seeks the failure on WBM, it takes a long time due to the enormous number of WBMs. We suggest a two-step approach to discover the probable pattern on the WBMs in this paper. The first step is to separate the normal WBMs from the defective WBMs. We adapt a hierarchical clustering for de-noising, which nicely performs this work by wisely tuning the number of minimum points and the cutting height. Once declared as a faulty WBM, then it moves to the next step. In the second step, we classify the patterns among the defective WBMs. For this purpose, we extract features from the WBM. Then machine learning algorithm classifies the pattern. We use a real WBM data set (WM-811K) released by Taiwan semiconductor manufacturing company.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.34 no.1
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• pp.1-7
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• 2024

β-Ga₂O₃ is a material with a wide band gap of ~4.8 eV and a high breakdown-voltage of 8 MV/cm, and is attracting much attention in the field of power device applications. In addition, compared to representative WBG semiconductor materials such as SiC, GaN and Diamond, it has the advantage of enabling single crystal growth with high growth rate and low manufacturing cost [1-4]. In this study, we succeeded in growing a 10 mm thick β-Ga₂O₃ single crystal doped with 0.3 mol% SnO₂ through the EFG (Edge-defined Film-fed Growth) method using multi-slit structure. The growth direction and growth plane were set to [010]/(010), respectively, and the growth speed was about 12 mm/h. The grown β-Ga₂O₃ single crystal was cut into various crystal planes (010, 001, 100, ${\bar{2}}01$) and surface processed. The processed samples were compared for characteristics according to crystal plane through analysis such as XRD, UV/VIS/NIR/Spec., Mercury Probe, AFM and Etching. This research is expected to contribute to the development of power semiconductor technology in high-voltage and high-temperature applications, and selecting a substrate with better characteristics will play an important role in improving device performance and reliability.

• Clean Technology
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• v.21 no.2
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• pp.85-89
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• 2015

Utilized in a variety of electronic components, electronic components industry with metallic ink technology was established itself as a major technology research and development was gradually increasing, silver ink that is excellent in conductivity and stability, have long been used in the industry of electronic components in recent years and silver ink has been the size of nanoscale particles dispersed by developing display, an electronic tag, a flexible circuit board or the like used in the semiconductor and electronics as has been highlighted in, however industry modernization of equipment by increasing the production and consumption of products generated during the production process and environmental pollutants by use of waste products is expected to bring a serious environmental problem. In this study, prepared by a wet reduction method, the manufacturing process of the silver nano-ink to the entire process of the environmental impact assessment (LCA) was evaluated using the techniques. Life cycle assessment software GaBi 6 was used as received from the relevant agencies of the silver nano-ink data with reference to the manufacturing process, building inventory was international organization for standardization (ISO) 14040, 14044 compliant LCA conducted over four stages.

• Journal of the Korean Society of Safety
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• v.31 no.5
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• pp.22-27
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• 2016

The Electrostatic Charge Prevention Technology is a core factor that highly influences the yield of Ultra High Resolution Flat Panel Display and high-integrated semiconductor manufacturing processes. The corona or x-ray ionizations are commonly used in order to eliminate static charges during manufacturing processes. To develop such a revolutionary x-ray ionizer that is free of x-ray radiation and has function to control the volume of ion formation simultaneously is a goal of this research and it absolutely overcomes the current risks of x-ray ionization. Under the International Commission on Radiological Protection, it must have a leakage radiation level that should be lower than a recommended level that is $1{\mu}Sv/hour$. In this research, the new generation of x-ray ionizer can easily control both the volume of ion formation and the leakage radiation level at the same time. In the research, the test constraints were set and the descriptions are as below; First, In order not to leak x-ray radiation while testing, the shielding box was fully installed around the test equipment area. Second, Implement the metallic Ring Electrode along a tube window and applied zero to ${\pm}8kV$ with respect to manage the positive and negative ions formation. Lastly, the ion duty ratio was able to be controlled in different test set-ups along with a free x-ray leakage through the metallic Ring Electrode. In the result of experiment, the maximum x-ray radiation leakage was $0.2{\mu}Sv/h$. These outcome is lower than the ICRP 103 recommended value, which is $1{\mu}Sv/h$. When applying voltage to the metallic ring electrode, the positive decay time was 2.18s at the distance of 300 mm and its slope was 0.272. In addition, the negative decay time was 2.1s at the distance of 300 mm and its slope was 0.262. At the distance of 200 mm, the positive decay time was 2.29s and its slope was 0.286. The negative decay time was 2.35s and its slope was 0.293. At the distance of 100 mm, the positive decay time was 2.71s and its slope was 0.338. The negative decay time was 3.07s and its slope was 0.383. According to these research, the observation was shown that these new concept of ionizer is able to minimize the leakage radiation level and to control the positive and negative ion duty ratio while ionization.

• Korean Journal of Optics and Photonics
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• v.20 no.3
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• pp.175-181
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• 2009

Holographic lithography is one of the potential technologies for next generation lithography which can print large areas (6") as well as very fine patterns ($0.35{\mu}m$). Usually, photolithography has been developed with two target purposes. One was for LCD applications which require large areas (over 6") and micro pattern (over $1.5{\mu}m$) exposure. The other was for semiconductor applications which require small areas (1.5") and nano pattern (under $0.2{\mu}m$) exposure. However, holographic lithography can print fine patterns from $0.35{\mu}m$ to $1.5{\mu}m$ keeping the exposure area inside 6". This is one of the great advantages in order to realize high speed fine pattern photolithography. How? It is because holographic lithography is taking holographic optics instead of projection optics. A hologram mask is the key component of holographic optics, which can perform the same function as projection optics. In this paper, Surface-Relief TIR Hologram Mask technology is introduced, and enables more robust hologram masks than those previously reported that were formed in photopolymer recording materials. We describe the important parameters in the fabrication process and their optimization, and we evaluate the patterns printed from the surface-relief TIR hologram masks.

• Toxicological Research
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• v.26 no.4
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• pp.261-266
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• 2010

In the workplace, the arsenic is used in the semiconductor production and the manufacturing of pigments, glass, pesticides and fungicides. Therefore, workers may be exposed to airborne arsenic during its use in manufacturing. The purpose of this study was to evaluate the potential toxicity of particulate matters (PMs) doped with arsenic (PMs-Arsenic) using a rodent model and to compare the genotoxicity in various concentrations and to examine the role of PMs-Arsenic in the induction of signaling pathway in the lung. Mice were exposed to PMs $124.4{\pm}24.5\;{\mu}g/m^3$ (low concentration), $220.2{\pm}34.5\;{\mu}g/m^3$ (middle concentration), $426.4{\pm}40.3\;{\mu}g/m^3$ (high concentration) doped with arsenic $1.4\;{\mu}g/m^3$ (Low concentration), $2.5\;{\mu}g/m^3$ (middle concentration), $5.7\;{\mu}g/m^3$ (high concentration) for 4 wks (6 h/d, 5 d/wk), respectively in the whole-body inhalation exposure chambers. To determine the level of genotoxicity, Chromosomal aberration (CA) assay in splenic lymphocytes and Supravital micronucleus (SMN) assay were performed. Then, signal pathway in the lung was analyzed. In the genotoxicity experiments, the increases of aberrant cells were concentration-dependent. Also, PMs-arsenic caused peripheral blood micronucleus frequency at high concentration. The inhalation of PMs-Arsenic increased an expression of phosphorylated Akt (p-Akt: protein kinase B) and phpsphorylated mammalian target of rapamycin (p-mTOR) at high concentration group. Taken together, inhaled PMs-Arsenic caused genotoxicity and altered Akt signaling pathway in the lung. Therefore, the inhalation of PMs-Arsenic needs for a careful risk assessment in the workplace.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.6 no.1
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• pp.78-82
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• 2005

Display manufacturing process has adopted RCA cleaning, applying to larger area and coping with environmental issue for last ten years. However, the approaching concept of ozonized, hydrogenised, or electrolyzed water cleaning technologies is within RCA clean paradigm. In this work, only electrolyzed anode water was applied to clean particles and organics as well as metals based on Pourbaix concept, and as a test vehicle, MgO particles were introduced to prove the new concept. The electrolyzed anode water is very oxidative with high oxidation reduction potential (ORP) and low in pH of more than 900 mV and 3.1, respectively. MgO particles were immersed in the anode water and its weight losses due to dissolution were measured with time. Weight losses were in the ranges of 100 to 500 micrograms in 250 ml anode water depending on their ORP and pH. Therefore it was concluded that the cleaning radicals in the anode water was at least in the range of 1 to $5{\times}10^{20}$ ea per 250 ml anode water equivalent to $1{\times}10^{18} ea/cm^2$. Hence it can be assumed that the anode water applied to display cleaning from now on $1{\times}10^{10}$ to $1{\times}10^{15} ea/cm^2$ ranges of contaminants are being treated. In addition, it was observed that anode water did not develop micro-roughness on hydrophobic surface while it did on the native silicon oxide.

• Journal of the Institute of Convergence Signal Processing
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• v.2 no.3
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• pp.86-92
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• 2001

Position controls are very important in semiconductor manufacturing devices, machine tools, precision measuring instruments, etc. to measure the distance of movement of moving objects in minute units and the accuracy of measurement for the moving distance in these devices affect the performance of the whole devices. Therefore, in those precision instruments, a sensing device that can measure the distance of movement with high-precision resolution is required. Thus an optical encoder that has such advantages as easy digital interface, economical price, and a resolution similar to that of laser interferometers can be used. In this paper, a interferometer-type linear scale with easy digital interface and high-resolution has been set up and measured the distance of movement based on the diffraction principle. Interference signals produced in this optical setup of the linear scale have beers digitalized through fabricated photodetectors and designed signal processing circuits. A resolution of 0.5${\mu}{\textrm}{m}$ is acquired from the experimental interferometer-type linear scale without for the movement of scales any additional dividing circuits. It is shown that from this experiment a high-resolution distance measurement device can be designed by a simple optical setup.

• Journal of Korean Society of Environmental Engineers
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• v.34 no.10
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• pp.702-708
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• 2012

Tetrafluoromethane ($CF_4$) has been used as etching and Chemical Vapor Deposition (CVD) gases for semiconductor manufacturing processes. These gases need to be removed efficiently because of their strong absorption of infrared radiation and long atmospheric lifetimes which cause the global warming effect. Also, the wastewater including the fluorine is caused by of the ground water pollution. Long-term consumption of water containing excessive fluoride can lead to fluorosis of the teeth and bones. The wastewater including the fluorine among the by-product which is generated by using the waterjet plasma after destroying $CF_4$ by HF is generated. The system which can remove the hydrogen fluoride among the wastewater by using the electrocoagulation using this wastewater the aluminum electrode was developed. The operating condition such as initial pH, electrocoagulation time, wastewater flow rate, current density were investigated experimentally using a electrocoagulation. Through the parametric studies, the highest hydrogen fluoride destruction of 85% was achieved at 3.5 initial pH, 10 min electrocoagulation time, 10 mL/min wastewater flow rate and $159A/m^2$ current density.