• Journal of the Korean institute of surface engineering
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• v.39 no.6
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• pp.276-281
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• 2006

In order to improve the performance of PPFs (Pre-Plated Frames), a PPF that employed a Cu-Sn alloy instead of conventionally used Ni was developed and then its properties were investigated. It was found that the electoplated Cu-Sn alloy layer was a mixture of uniformly distributed fine crystallites, resulting In better wettability and crack resistance than those of Ni PPF. Moreover, as in Cu/Ni/Pd/Au PPF, migration of copper atoms from the base metal to the top of the Cu/Cu-Sn/Pd/Au PPF surface was not found although the Cu-Sn layer itself contained considerable amount of copper. It was expected that, by using the newly developed Cu-Sn PPF, any possible heat generation and signal interrupt caused by an external electro-magnetic field could be reduced because the Cu-Sn layer was paramagnetic, i.e., nonmagnetic.

• Journal of the Korea Institute of Military Science and Technology
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• v.15 no.4
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• pp.502-506
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• 2012

In order to find the structural characteristics of the thin films of group II-VI semiconductor compounds compared with those of powder materials, films were made of 4 powders of ZnS, CdS, CdSe, and CdTe(Aldrich), each with 99.99 % purity. For the ZnS/CdS multi-layers, the ZnS layer was coated over the CdS layer on an $AlO_x$ membrane, which served as a protective layer within a vacuum at the average speed of 1 ${\AA}$/sec. After studying the structures of the group II-VI semiconductor thin films by using X-ray spectroscopy, we found that the ZnS, ZnS/CdS, CdS, and CdSe films were hexagonal and exhibited some degree of preferred orientation. Also, the particles of the thin films of II-VI semiconductor compounds proved to be more homogeneous in size compared to those of the powder materials. These results were further verified through scanning electron microscopy(SEM), EDX analysis, and powder and thin film X-ray diffraction.

• Journal of Sensor Science and Technology
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• v.32 no.6
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• pp.455-461
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• 2023

We investigated the electrical characteristics of ZnO nanoparticles (NPs) with air exposure that is a widely used electron transport layer for quantum dot light-emitting diodes (QLEDs). Upon air exposure, we observed changes in the density of states (DOS) of the trap levels of ZnO NPs. In particular, with air exposure, the concentration of deep trap energy levels in ZnO NPs decreased and electron mobility significantly improved. Consequently, the air-exposed ZnO reduced leakage current by approximately one order of magnitude and enhanced the external quantum efficiency at the low driving voltage region of the QLED. In addition, based on the excellent conductivity properties, high-brightness QLEDs could be achieved.

• Applied Science and Convergence Technology
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• v.26 no.3
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• pp.52-54
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• 2017

An InGaN/GaN multiple quantum well (MQW) structure is grown on a GaN/sapphire template using a plasma-assisted molecular beam epitaxy (PA-MBE). The fluctuation of the quantum well thickness formed from roughly-grown InGaN layer results in a disordered photoluminescence (PL) spectrum. The surface morphologies of the InGaN layers with various In compositions are investigated by reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM). A blurred InGaN/GaN hetero-interface and the non-uniform QW size is confirmed by high resolution transmission electron microscopy (HR-TEM). Inhomogeneity of the quantum confinement results in a degradation of the quantum efficiency even though the InGaN layer has a uniform In composition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.4
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• pp.347-357
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• 2024

Oxide semiconductor gas sensors are widely used for detecting toxic, explosive, and flammable gases due to their simple structure, cost-effectiveness, and potential integration into compact devices. However, their reliable gas detection is hindered by a longstanding issue known as humidity dependence, wherein the sensor resistance and gas response change significantly in the presence of moisture. This problem has persisted since the inception of oxide semiconductor gas sensors in the 1960s. This paper explores the root causes of humidity dependence in oxide semiconductor gas sensors and presents strategies to address this challenge. Mitigation strategies include functionalizing the gas-sensing material with noble metal/transition metal oxides and rare-earth/rare-earth oxides, as well as implementing a moisture barrier layer to prevent moisture diffusion into the gas-sensing film. Developing oxide semiconductor gas sensors immune to humidity dependence is expected to yield substantial socioeconomic benefits by enabling medical diagnosis, food quality assessment, environmental monitoring, and sensor network establishment.

• Journal of Institute of Control, Robotics and Systems
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• v.14 no.4
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• pp.365-368
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• 2008

Feasibility test for radical reactions in organic light emitting diode(OLED) has been applied on OLED consisting of hole transport layer(HTL) and electron transport layer(ETL). Organic molecules such as 4,4',-Bis[N-(1-naphthyl)-N-phenylamino] biphenyl(NPD) and 4,4',4"-tris(3-methylphenylphenylamino)triphenylamine(m-MTDATA) are chosen for hole transport layer(HTL) and Bathocuproine(BCP) for electron transport layer(ETL) in this study. Informations on energy and shape of frontier orbitals and data on radical reactions of simple aromatics from semiconductor($TiO_2$) photocatalysis have provided basis for determining feasibility for radical reactions in OLED. The outcome of our feasibility test would be useful in designing optimum molecule for organic layer with a view to extending the lifetime of OLED.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.17 no.3
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• pp.14-19
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• 2008

In the semiconductor IC(Integrated Circuit) package, the top surface of silicon chip is directly attached to the area of the leadframe with a double-sided adhesive layer, in which the base layer have the upper adhesive layer and the lower adhesive layer. The IC package structure has been known to encounter a thermo-mechanical failure mode such as delamination. This failure mode is due to the residual stress on the adhesive surface of silicon chip and leadframe in the curing-cooling process. The induced thermal stress in the curing process has an influence on the cooling residual stress on the silicon chip and leadframe. In this paper, for the minimization of the chip surface damage, the adhesive topologies on the silicon chip are studied through the finite element analysis(FEA).

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.937-939
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• 2009

In this paper, we report electrical properties of OTFTs made by ink-jet printing with polyvinylphenol (PVP) for bank layer and bis(triisopropylsilylenthynyl) pentacene (TIPS-pentacene) for semiconductor. We could achieve better crystallization and surface uniformity of TIPS pentacene by employing PVP bank layer. The OTFT with PVP bank layer exhibited an field-effect mobility of 0.18 $cm^2$/Vs, current on/off ratio of $2.09{\times}10^5$, and subthreshold slope of 0.42 V/decane.

• Journal of the Semiconductor & Display Technology
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• v.11 no.2
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• pp.71-74
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• 2012

Uniformity of the wafer temperature is one of the important factors in etching process. Plasma, chucking force, backside helium pressure and the surface temperature of ESC(electrostatic chuck) affect the wafer temperature. ESC consists of several layers of structure. Each layer has own thermal resistance and the Si-adhesive layer has highest thermal resistance among them. In this work, the temperature distribution of ESC was analyzed by 3-D FEM with various defects and the thickness deviation of the Si-adhesive layer. The result with Si-adhesive layer with the low center thickness deviation shows modified temperature distribution of ESC surface.

• Journal of the Semiconductor & Display Technology
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• v.11 no.2
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• pp.53-57
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• 2012

This paper is for accurately simulating the breakdown of MHEMTs with an InP-etchstop layer. 2D-Hydrodynamic simulation parameters are investigated and calibrated for the InP-epitaxy layer. With these calibrated parameters, simulations are performed and analyzed for the breakdown of devices with an InP-etchstop layer. In the paper, the impact-ionization coefficients, the mobility degradation due to doping concentration, and the saturation velocity for InP-epitaxy layer are newly calibrated for more accurate breakdown simulation.