• Korean Journal of Optics and Photonics
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• v.26 no.6
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• pp.312-317
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• 2015

We investigate the effect of laser-resonator mode size on the output of a Yb:YAG laser that is mode-locked by a semiconductor saturable absorber mirror (SESAM). We demonstrate that the smaller the product of the mode sizes at a SESAM and at a Yb:YAG crystal, the more stable the mode-locked output is. Also, we found numerically that there is a resonator length at which the mode-locked output occurs, regardless of the thermal lens effect of a Yb:YAG.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.42 no.6 s.336
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• pp.61-66
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• 2005

In this paper, we implemented a impulse generator, the one of the part in UWB(Ultra Wide Band) system using step recovery diode(SRD) and gain-switced semiconductor laser. The impulse generator was consisted of four stages; The first stage used SRD to generate the first impulse for gain switching. The second stage controled current for the suitable gain switching condition. The third was the second impulse generator to generate gaussian pulse. For gain switching, the first impulse was applied to semiconductor laser. In the last stage the gain switched impulse was converted into mono-gaussian pulse. The measured mono-gaussian pulse was 360 psec pulse-width and $-70mV \~ +50mV$ amplitude in time domain. In frequency domain its magnitude and bandwidth was, respectively, -41dBm and 3.6GHz. Accordingly, the impulse generator that we suggested was suitable for UWB systems.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.647-650
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• 2006

Low temperature polycrystalline silicon (LTPS) technology using a high power laser have been widely applied to thin film transistors (TFTs) for liquid crystal, organic light emitting diode (OLED) display, driver circuit for system on glass (SOG) and static random access memory (SRAM). Recently, the semiconductor industry is continuing its quest to create even more powerful CPU and memory chips. This requires increasing of individual device speed through the continual reduction of the minimum size of device features and increasing of device density on the chip. Moreover, the flat panel display industry also need to be brighter, with richer more vivid color, wider viewing angle, have faster video capability and be more durable at lower cost. Kornic Systems Co., Ltd. developed the $KORONA^{TM}$ LTP/GLTP series - an innovative production tool for fabricating flat panel displays and semiconductor devices - to meet these growing market demands and advance the volume production capabilities of flat panel displays and semiconductor industry. The $KORONA^{TM}\;LTP/GLTP$ series using DPSS laser and XeCl excimer laser is designed for the new generation of the wafer & FPD glass annealing processing equipment combining advanced low temperature poly-silicon (LTPS) crystallization technology and object-oriented software architecture with a semistandard graphical user interface (GUI). These leading edge systems show the superior annealing ability to the conventional other method. The $KORONA^{TM}\;LTP/GLTP$ series provides technical and economical benefits of advanced annealing solution to semiconductor and FPD production performance with an exceptional level of productivity. High throughput, low cost of ownership and optimized system efficiency brings the highest yield and lowest cost per wafer/glass on the annealing market.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04a
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• pp.197-200
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• 2000

All-optical NOR logic device was realized by use of two pump signals with a single wavelength and a semiconductor optical amplifier(SOA). Specially, Mach-Zehnder(MZ) modulator was used for an external modulation of the pump signals. To obtain the sufficient gain saturation of the SOA, pump signals are amplified by an Er-doped fiber amplifier(EDFA) at the input of the SOA. Pump and probe signals are obtained from a DFB laser diode(${\lambda}_p$=1554 nm) and a tunable laser diode(${\lambda}_s$=1535 nm), respectively. The operation characteristics of the NOR logic device are successfully measured and demonstrated at the modulation frequency of 4.83 MHz.

• Korean Journal of Optics and Photonics
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• v.17 no.6
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• pp.544-547
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• 2006

A time-domain modeling approach is used to study characteristics of a widely tunable coupled-ring reflector (CRR) laser diode(LD). The CRR consists of a bus waveguide and two coupled ring resonators coupled to the bus without resorting to distributed Bragg grating structure. The tuning range can be a few tens of nanometers with a side mode suppression ratio exceeding 35dB through the adjustment of currents into the phase control sections in the rings. The CRR laser diode has long effective cavity length compared to conventional laser diodes. Accordingly, a broad additional resonance peak in the amplitude modulation characteristics is observed between 20 to 30 GHz, implying the extension of amplitude modulation bandwidth.

• Korean Journal of Optics and Photonics
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• v.13 no.5
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• pp.396-399
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• 2002

Using a bi-layer anti-reflection coating of $TiO_2$and $SiO_2,$ we have achieved a minimum facet reflectivity of $~10^{-5}$ and a band width of 27 nm for a reflectivity of $~10^{-4}$ or less for 1.3 $\mu\textrm{m}$ spot size converter integrated semiconductor lasers. This coating is applicable to external-cavity-tuned laser sources and semiconductor optical amplifiers.

• Journal of Biomedical Engineering Research
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• v.24 no.4
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• pp.319-328
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• 2003

The purpose of this paper is to develop a medical laser system using the semiconductor diode laser in order to photodynamic cancel therapy as a light source. The ideal light source for photodynamic therapy would be a homogeneous nondiverging light with variable spot size and specific wavelength with stability. After due consideration in this point, in this paper, we used a diode laser resonator of 635nm wavelength. The development laser system have a statistical laser out beam with accuracy control using the constant current control of method and clinic-friendly with compact. In order to protect the diode resonator from the over-current, the rush-current and electrical fault, we specially designed. The most importance therapeutic factor are the radiation mode for cancer therapy. So we developed the radiation mode of CW(Continuous Wave), long pulse, short pulse, and burst pulse and can adjust the exposure time from several milli-second to several minute. The experimental result shows that laser beam power was increased linear from 10mW to 300mW according to the increasing input current and the increasing exposure time. The developed new compact diode laser system have a stability of output power and specific wavelength with easy control and transportable for many applications of PDT.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.28A no.10
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• pp.806-813
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• 1991

In this paper, we suggested the diagnosis of the optical FSK transmitter output characteristics using the Micheloson interferometer. The transmitter is designed by the direct frequency modulation effect of a semoconductor laser diode. The optical FSK transmitter consists of a temperature stabilized semiconductor laser diode and an optimally designed equalizer. It is modulated by 100Mbit/s PRBS Generator to diagonosis of Optical FSK transmitter output characteristics. The Michelson Interferometer is used for the optical frequency discriminator which transforms the output frequency of the transmitter to the amplitude of light. The measurement of the performance of the transmitter to the amplitude of light. The measurement of the performance of the transmitter computer the transmitted data and their eye pattern with the simulation results, the received data and their eye pattern. As the result of experiment, the data transfer rate of the transmitters is 100Mbit/s.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.04a
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• pp.203-205
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• 2003

레이저 다이오드를 p-side-down 방식으로 본딩하기 위하여 AuSn 솔더합금을 증착한 후 온도와 압력, 시간을 변화시켜 본딩상태를 조사하였다. CuW위에 adhsion layer와 확산방지층을 각각 $500{\AA}$과 $2000{\AA}$을 증착하였으며 솔더층으로 AuSn을 $2.6{\mu}m$ 증착 하였다. 열처리는 질소 분위기에서 행하였으며, 표면의 거칠기는 AFM으로 측정하였다.

• Journal of Biomedical Engineering Research
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• v.17 no.4
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• pp.499-506
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• 1996

Blood flow velocimeter is an essential device to measure the blood flow in skin tissue. In this study, we developed a high-speed LDV(laser Doppler Velocimeter) that has real time processing capability using a DSP(digital signal processing) chip and is able to continuously measure information about blood-flow based on a noninvasive method using self-mixing type laser diode. This LDV system has a simpler structure than any other typical blood flow velocimeter and is composed of new self-mixing probe, stabilizer circuits DSP board, and interf'ace boule We measured velocity of speaker-unit by operational frequencies to identify Doppler effect of this system, performed clinical experiment on bare finger tip and compared it with a commercial euipment BPM403A(USA).