• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.2116-2118
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• 2000

In the technique of Q-switching, very fast electronically controlled optical shutters can be made by using the electro-optic effect in crystals or liquids. The driver for the Pockels cell must be a high-speed, high-voltage switch which also must deliver a sizeable current. Common switching techniques include the use of vacuum tubes, cold cathode tubes, thyratrons, SCRs, and avalanche transistors. Semiconductor devices such as SCRs, avalanche transistors, and MOSFETs have been successfully employed to drive Pockels cell Q-switch. In this study, a simple driver for the Pockels cell Q-switch was developed by using SCRs, pulse transformer and TTL ICs. The Pockels cell Q-switch which was operated by this driver was employed in pulsed Nd:YAG laser system to investigate the operating characteristics of this Q-switch. And we have investigated the output characteristics of this Q-switch as a function of the Q-switch delay time to Xe flashlamp current on.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.3
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• pp.39-44
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• 2004

Fiber Bragg grating sensors are fabricated by core index modulation using UV laser and phasemask. Bragg wavelength of the grating is changed by the external strain. In this paper, a signal processing system of fiber Bragg grating sensor has studied in the optical wavelength domain. The system is based on the sweep semiconductor light source that consists of SLD, F-P tunable filter and etalon filter. The hysteresis effects of PZT in the F-P tunable filter are compensated. The long term measurement stability is obtained by controlling the temperature of F-P tunable filter and the SLD. We compare the strain data from fiber Bragg grating sensor and that from strain gauge at concrete hume pipe. We also get very good results for the long gauge displacement using fiber Bragg grating sensor which are identical to the data with short gauge length ordinary displacement sensor.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.103-103
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• 1999

CeO2 는 cubic 구조의 일종인 CeF2 구조를 가지며 격자 상수가 0.541nm로 Si의 격자 상수 0.543nm와 거의 비슷하여 Si과의 부정합도가 0.35%에 불과하여 CeO2를 Si 기판 위에 에피택셜하게 성장시킬 수 있는 가능성이 크다. 따라서 SOI(Silicon-On-Insulator) 구조의 실현을 위하여 Si 기판위에 CeO2를 에피택셜하게 성장시키려는 많은 노력이 있었다. 또한 CeO2 는 열 적으로 대단히 안정된 물질로서 금속/강유전체/반도체 전계효과 트랜지스터(MFSFET : metal-ferroelectric-semiconductor field effect transistor)에서 ferroelectric 박막과 Si 기판사이에 완충층으로 사용되어 강유전체의 구성 원자와 Si 원자들간의 상호 확산을 방지함으로써 경계면의 특성을 향상시기키 위해 사용된다. e-beam evaporation와 laser ablation에 의한 Si 기판 위의 CeO2 격자 성장에 관한 많은 보고서가 있다. 이 방법들은 대규모 생산 공정에서 사용하기 어려운 반면 RF-magnetron sputtering은 대규모 반도체 공정에 널리 쓰인다. Sputtering에 의한 Si 기판위의 CeO2 막의 성장에 관한 보고서의 수는 매우 적다. 이 논문에서는 Ce target을 사용한 reactive rf-magnetron sputtering에 의해 Si(100) 과 Si(111) 기판위에 성장된 CeO2 의 구조 및 전기적 특성을 보고하고자 한다. 주요한 증착 변수인 증착 power와 증착온도, Seed Layer Time이 성장막의 결정성에 미치는 영향을 XRD(X-Ray Diffractometry) 분석과 TED(Transmission Electron Diffration) 분석에 의해 연구하였고 CeO2 /Si 구조의 C-V(capacitance-voltage)특성을 분석함으로써 증차된 CeO2 막과 실리콘 기판과의 계면 특성을 연구하였다. CeO2 와 Si 사이의 계면을 TEM 측정에 의해 분석하였고, Ce와 O의 화학적 조성비를 RBS에 의해 측정하였다. Si(100) 기판위에 증착된 CeO2 는 $600^{\circ}C$ 낮은 증착률에서 seed layer를 하지 않은 조건에서 CeO2 (200) 방향으로 우선 성장하였으며, Si(111) 기판 위의 CeO2 박막은 40$0^{\circ}C$ 높은 증착률에서 seed layer를 2분이상 한 조건에서 CeO2 (111) 방향으로 우선 성장하였다. TEM 분석에서 CeO2 와 Si 기판사이에서 계면에서 얇은 SiO2층이 형성되었으며, TED 분석은 Si(100) 과 Si(111) 위에 증착한 CeO2 박막이 각각 우선 방향성을 가진 다결정임을 보여주었다. C-V 곡선에서 나타난 Hysteresis는 CeO2 박막과 Si 사이의 결함때문이라고 사료된다.

• Journal of Veterinary Clinics
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• v.37 no.1
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• pp.1-8
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• 2020

Canine otitis externa is a common disorder in small animal practice with prevalence up to 20%. In a large percentage of cases, canine otitis externa is a chronic and recurrent disease also associated with drug-resistant bacteria that is difficult to treat with traditional antibiotics. Photodynamic therapy (PDT) is a new strategy to exterminate pathogenic microorganisms such as bacteria and fungi. The purpose of this study was to investigate the effectiveness of photodynamic therapy against canine otitis externa using three photosensitizer (PS); 5-Aminolevulinic acid (5-ALA) and Methyl aminolevulinic acid (MAL) with semiconductor laser diode (SLD, 635nm of wave length), Chlorophyll-lipoid complex (CLC) with light-emitting diode (LED, 660nm of wave length). After PDT, dogs showed improved Otitis Index Score (OTIS) in swelling, exudate, odor, and pain. A result of the cytology test revealed decrease of bacteria and malassezia count in the oil immersion field and colony forming units count. PDT was effective as a bacteriocide of methicillin-resistant Staphylococcus pseudintermedius (MRSP) and a fungicide of Malassezia pachydermatis. MAL and 5-ALA were more effective PS against canine otitis externa than CLC. These results suggest that PDT is a new strategy to exterminate pathogenic microorganisms such as bacteria and fungi. PDT can be considered as a new therapeutic approach for canine recurrent otitis externa and a countermeasure to drug resistance that is a disadvantage of traditional antibiotic and antifungal therapy.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.2
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• pp.330-336
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• 2007

A single pixel photon counting type image sensor which is applicable for medical diagnosis with digitally obtained image and industrial purpose has tern designed with $0.18{\mu}m$ triple-well CMOS process. The designed single pixel for readout chip is able to be operated by single supply voltage to simplify digital X-ray image sensor module and a preamplifier which is consist of folded cascode CMOS operational amplifier has been designed to enlarge signal voltage(${\Delta}Vs$), the output voltage of preamplifier. And an externally tunable threshold voltage generator circuit which generates threshold voltage in the readout chip has been newly proposed against the conventional external threshold voltage supply. In addition, A dark current compensation circuit for reducing dark current noise from photo diode is proposed and 15bit LFSR(Linear Feedback Shift Resister) Counter which is able to have high counting frequency and small layout area is designed.

• The Journal of the Korea institute of electronic communication sciences
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• v.18 no.6
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• pp.1067-1072
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• 2023

We prepared AZO (Al₂O₃ : 3 wt %) thin films according to the substrate temperature using the pulsed laser deposition method and the structural, electrical, and optical properties of the thin films were investigated. The AZO thin film deposited at 400℃ showed the best (002) orientation and the FWHM was 0.38°. As a result of the investigation of electrical properties, it was confirmed that the carrier concentration and mobility increased and the resistivity decreased as the substrate temperature increased. The average transmittance in the visible light region showed a high value of 85% or more regardless of the substrate temperature. The Burstein-Moss effect, in which the carrier concentration would increase with increasing substrate temperature thereby widening the energy band gap, was also observed. The resistivity and the figure of merit of the AZO thin film deposited at a substrate temperature of 400℃ were 6.77 × 10^-4 Ω·cm and 1.02 × 10⁴ Ω^-1·cm^-1 respectively, showing the best value.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.188.2-188.2
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• 2015

The presence of the conduction interface in epitaxial $LaAlO_3/SrTiO_3$ thin films has opened up challenging applications which can be expanded to next-generation nano-electronics. The metallic conduction path is associated with two adjacent insulating materials. Such device structure is applicable to frequency-dependent impedance spectroscopy. Impedance spectroscopy allows for simultaneous measurement of resistivity and dielectric constants, systematic identification of the underlying electrical origins, and the estimation of the electrical homogeneity in the corresponding electrical origins. Such unique capability is combined with the intentional control on the interface composition composed of $SrTiO_3$ and $CaTiO_3$, which can be denoted by $SrxCa1-_xTiO_3$. The underlying $Sr_xCa1-_xTiO_3$ interface was deposited using pulsed-laser deposition, followed by the epitaxial $LaAlO_3$ thin films. The platinum electrodes were constructed using metal shadow masks, in order to accommodate 2-point electrode configuration. Impedance spectroscopy was performed as the function of the relative ratio of Sr to Ca. The respective impedance spectra were analyzed in terms of the equivalent circuit models. Furthermore, the impedance spectra were monitored as a function of temperature. The ac-based characterization in the 2-dimensional conduction path supplements the dc-based electrical analysis. The artificial manipulation of the interface composition will be discussed towards the electrical application of 2-dimensional materials to the semiconductor devices in replacement for the current Si-based devices.

• Journal of Radiation Protection and Research
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• v.41 no.2
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• pp.167-171
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• 2016

Background: TlBr is of considerable technological importance for radiation detection applications where detecting high-energy photons such as X-rays and ${\gamma}$-rays are of prime importance. However, there were few reports on investigating optical properties of TlBr itself for deeper understandings of this material and for making better radiation detection devices. Thus, in this paper, we report on the optical characterizations of TlBr single crystals. Spectroscopic ellipsometry (SE) and photoluminescence (PL) measurements at RT were performed for this work. Materials and Methods: A 2-inch TlBr single crystalline ingot was grown by using the vertical Bridgman furnace. SE measurements were performed at RT within the photon energy range from 1.1 to 6.5 eV. PL measurements were performed at RT by using a home-made PL system equipped with a 266 nm-laser and a spectrometer. Results and Discussion: Dielectric responses from SE analysis were shown to be slightly different among the different samples possibly due to the different structural/optical properties. Also from the PL measurements, it was observed that the peak intensities of the middle samples were significantly higher than those of the other two samples. With the given values for permittivity of free space (${\varepsilon}_0=8.854{\times}10^{-12}F{\cdot}m^{-1}$), thickness (d = 1 mm), and area ($A=10{\times}10mm^2$) of the TlBr sample, capacitances of TlBr were 6.9 pF (at $h{\nu}=3eV$) and 4.4 pF (at $h{\nu}=6eV$), respectively. Conclusion: SE and PL measurement and analysis were performed to characterize TlBr samples from the optical perspective. It was observed that dielectric responses of different TlBr samples were slightly different due to the different material properties. PL measurements showed that the middle sample exhibited much stronger PL emission peaks due to the better material quality. From the SE analysis, optical, dielectric constants were extracted, and calculated capacitances were in the few pF range.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.53.2-53.2
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• 2010

지금까지 능동 구동 디스플레이의 TFT backplane에 사용하고 있는 채널 물질로는 수소화된 비정질 실리콘(a-Si:H)과 저온 폴리실리콘(low temperature poly-Si)이 대표적이다. 수소화된 비정질 실리콘은 TFT-LCD 제조에 주로 사용되는 물질로 제조 공정이 비교적 간단하고 안정적이며, 생산 비용이 낮고, 소자 간 특성이 균일하여 대면적 디스플레이 제조에 유리하다. 그러나 a-Si:H TFT의 이동도(mobility)가 1 cm2/Vs이하로 낮아 Full HD 이상의 대화면, 고해상도, 고속 동작을 요구하는 UD(ultra definition)급 디스플레이를 개발하는데 있어 한계 상황에 다다르고 있다. 또한 광 누설 전류(photo leakage current)의 발생을 억제하기 위해서 화소의 개구율(aperture ratio)을 감소시켜야하므로 패널의 투과율이 저하되고, 게이트 전극에 지속적으로 바이어스를 인가 시 TFT의 문턱전압(threshold voltage)이 열화되는 문제점을 가지고 있다. 문제점을 극복하기 위한 대안으로 근래 투명 산화물 반도체(transparent oxide semiconductor)가 많은 관심을 얻고 있다. 투명 산화물 반도체는 3 eV 이상의 높은 밴드갭(band-gap)을 가지고 있어 광 흡수도가 낮아 투명하고, 광 누설 전류의 영향이 작아 화소 설계시 유리하다. 최근 다양한 조성의 산화물 반도체들이 TFT 채널 층으로의 적용을 목적으로 활발하게 연구되고 있으며 ZnO, SnO2, In2O3, IGO(indium-gallium oxide), a-ZTO(amorphous zinc-tin-oxide), a-IZO (amorphous indium-zinc oxide), a-IGZO(amorphous indium-galliumzinc oxide) 등이 그 예이다. 이들은 상온 또는 $200^{\circ}C$ 이하의 낮은 온도에서 PLD(pulsed laser deposition)나 스퍼터링(sputtering)과 같은 물리적 기상 증착법(physical vapor deposition)으로 손쉽게 증착이 가능하다. 특히 이중에서도 a-IGZO는 비정질임에도 불구하고 이동도가 $10\;cm2/V{\cdot}s$ 정도로 a-Si:H에 비해 월등히 높은 이동도를 나타낸다. 이와 같이 a-IGZO는 비정질이 가지는 균일한 특성과 양호한 이동도로 인하여 대화면, 고속, 고화질의 평판 디스플레이용 TFT 제작에 적합하고, 뿐만 아니라 공정 온도가 낮은 장점으로 인해 플렉시블 디스플레이(flexible display)의 backplane 소재로서도 연구되고 있다. 본 실험에서는 rf sputtering을 이용하여 증착한 a-IGZO 박막에 대하여 열처리 조건 변화에 따른 a-IGZO 박막들의 광학적, 전기적 특성변화를 살펴보았고, 이와 더불어 a-IGZO 박막을 TFT에 적용하여 소자의 특성을 분석함으로써, 열처리에 따른 Transfer Curve에서의 우리가 요구하는 Threshold Voltage(Vth)의 변화를 관찰하였다.

• Korean Journal of Materials Research
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• v.13 no.6
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• pp.347-351
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• 2003

II-Ⅵ ZnO compound semiconductor thin films were grown on $\alpha$-Al$_2$O$_3$(0001) single crystal substrate by radical beam assisted molecular beam epitaxy and the optical properties were investigated. Zn(6N) was evaporated using Knudsen cell and O radical was assisted at the partial pressure of 1$\times$10$^{4}$ Torr and radical beam source of 250-450 W RF power. In $\theta$-2$\theta$ x-ray diffraction analysis, ZnO thin film with 500 nm thickness showed only ZnO(0002)and ZnO(0004) peaks is believed to be well grown along c-axis orientation. Photoluminescence (PL) measurement using He-Cd ($\lambda$=325 nm) laser is obtained in the temperature range of 9 K-300 K. At 9 K and 300 K, only near band edge (NBE) is observed and the FWHM's of PL peak of the ZnO deposited at 450 RF power are 45 meV and 145 meV respectively. From no observation of any weak deep level peak even at room temperature PL, the ZnO grains are regarded to contain very low defect density and impurity to cause the deep-level defects. The peak position of free exciton showed slightly red-shift as temperature was increased, and from this result the binding energy of free exciton can be experimentally determined as much as $58\pm$0.5 meV, which is very closed to that of ZnO bulk. By van der Pauw 4-point probe measurement, the grown ZnO is proved to be n-type with the electron concentration($n_{e}$ ) $1.69$\times$10^{18}$$cm^3$, mobility($\mu$) $-12.3\textrm{cm}^2$/Vㆍs, and resistivity($\rho$) 0.30 $\Omega$$\cdot$cm.