• Title/Summary/Keyword: Semiconductor laser

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Rectangular ring laser based on total internal reflection mirror and directional coupler (전반사 미러와 방향성 결합기를 이용한 직사각형 링 레이저)

  • Kim, Doo-Gun;Choi, Young-Wan
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.8
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    • pp.17-23
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    • 2008
  • We have investigated the properties of the novel rectangular ring lasers containing active and passive regions in a InP material system. The rectangular ring laser consists of four low loss total internal reflection mirrors and a directional coupler made out of passive three waveguide. Two different lasers haying active lengths of 250 and $350{\mu}m$ and total cavity lengths of 580 and $780{\mu}m$ are fabricated, respectively. For both devices lasing thresholds of 38 mA is obtained at room temperature and under continuous wave operation. Lasing is predominantly single mode with the side mode suppression ratio better than 20 dB.

Design of 808nm GRIN-SCH Quantum Dot Laser Diode (808nm GRIN-SCH 양자점 레이저 다이오드 설계)

  • Chan, Trevor;Son, Sung-Hun;Kim, Kyoung-Chan;Kim, Tae-Geun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.131-131
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    • 2010
  • The power of semiconductor laser diodes has been limited primarily by the heating effects which occur at high optical intensities. The actual limiting event can take one of a number of forms such as. catastrophic optical damage or filamentation. A general approach to this problem is to design a heterostructure which creates a high powered output while maintaining low internal optical intensities. A graded index separate confinement heterostructure (GRIN-SCH) is one such structure that accomplishes the above task. Here, the active region is sandwiched between graded index layers where the index of refraction increases nearer to the active layer. This structure has been shown to yield a high efficiency due to the confinement of both the optical power and carriers, thereby reducing the optical intensity required to achieve higher powers. The optical confinement also reinforces the optical beam quality against high power effects. Quantum dots have long been a desirable option for laser diodes due to the enhanced optical properties associated with the zeroth dimensionality. In our work, we use PICS3D software created by Crosslight Software Inc. to simulate the performance of In0.67A10.33As/A10.2Ga0.8AsquantumdotsusedwithaGRIN-SCH. The simulation tools are used to optimize the GRIN-SCH structure for high efficiency and optical beam quality.

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The Effect of Tail State on the Electrical and the Optical Properties in Amorphous IGZO (비정질 InGaZnO4 박막의 전기적, 광학적 특성간의 상관관계 연구)

  • Bae, Sung-Hwan;Yoo, Il-Hwan;Kang, Suk-Ill;Park, Chan
    • Journal of the Korean Ceramic Society
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    • v.47 no.4
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    • pp.329-332
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    • 2010
  • In order to investigate the effect of tail state on the electrical and the optical properties in amorphous IGZO(a-IGZO), a-IGZO films were deposited at room temperature on fused silica substrats using pulsed laser deposition method. The laser pulse energy was used as the processing parameter. In-situ post annealing was carried out at $150^{\circ}C$ right after the film deposition. The $O_2$ partial pressure during the deposition and the post annealing was fixed to 10mTorr. The carrier mobility of the a-IGZO films had a range from 2 to $18\;cm^2/Vs$ at carrier concentrations greater than $10^{18}\;cm^{-3}$. As the laser energy density increased, the Hall mobility increased. And post annealing improved the Hall mobility, as well. The optical property was examined using the ultraviolet-visible spectroscopy. The a-IGZO films that have low Hall mobility exhibited stronger and broader absorption tails in >3.0 eV region. Post annealing reduced the intensity of the tail-like absorption. The absorption tail in a-IGZO films is an important factor which affects the electrical and the optical properties.

Design of flexure hinge to reduce lateral force of laser assisted thermo-compression bonding system (레이저 열-압착 본딩 시스템의 Lateral Force 감소를 위한 유연 힌지의 설계)

  • Lee, Dong-Won;Ha, Seok-Jae;Park, Jeong-Yeon;Yoon, Gil-Sang
    • Design & Manufacturing
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    • v.14 no.3
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    • pp.23-30
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    • 2020
  • Laser Assisted Thermo-Compression Bonding (LATCB) has been proposed to improve the "chip tilt due to the difference in solder bump height" that occurs during the conventional semiconductor chip bonding process. The bonding module of the LATCB system has used a piezoelectric actuator to control the inclination of the compression jig on a micro scale, and the piezoelectric actuator has been directly coupled to the compression jig to minimize the assembly tolerance of the compression jig. However, this structure generates a lateral force in the piezoelectric actuator when the compression jig is tilted, and the stacked piezoelectric element vulnerable to the lateral force has a risk of failure. In this paper, the optimal design of the flexure hinge was performed to minimize the lateral force generated in the piezoelectric actuator when the compression jig is tilted by using the displacement difference of the piezoelectric actuator in the bonding module for LATCB. The design variables of the flexure hinge were defined as the hinge height, the minimum diameter, and the notch radius. And the effect of the change of each variable on the stress generated in the flexible hinge and the lateral force acting on the piezoelectric actuator was analyzed. Also, optimization was carried out using commercial structural analysis software. As a result, when the displacement difference between the piezoelectric actuators is the maximum (90um), the maximum stress generated in the flexible hinge is 11.5% of the elastic limit of the hinge material, and the lateral force acting on the piezoelectric actuator is less than 1N.

Study of the Effect of Surface Roughness through the Application of 3D Profiler and 3D Laser Confocal Microscope (삼차원 표면 조도 측정기와 삼차원 레이저 공초점 현미경 적용에 따른 표면 거칠기에 대한 영향 연구)

  • Hee-Young Jung;Dae-Eun Kim
    • Tribology and Lubricants
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    • v.40 no.2
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    • pp.47-53
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    • 2024
  • Surface topography plays a decisive role in determining the performance of several precision components. In particular, the surface roughness of semiconductor devices affects the precision of the circuit. In this regard, the surface topography of a given surface needs to be appropriately assessed. Typically, the average roughness is used as one of the main indicators of surface finish quality because it is influenced by both dynamic and static parameters. Owing to the increasing demand for such accurate and reliable surface measurement systems, studies are continuously being conducted to understand the parameters of surface roughness and measure the average roughness with high reliability. However, the differences in the measurement methods of surface roughness are not clearly understood. Hence, in this study, the surface roughness of the back of a silicon wafer was measured using both contact and noncontact methods. Subsequently, a comparative analysis was conducted according to various surface roughness parameters to identify the differences in surface roughness depending on the measurement method. When using a 3D laser confocal microscope, even smaller surface asperities can be measured compared with the use of a 3D profiler. The results are expected to improve the understanding of the surface roughness characteristics of precision components and be used as a useful guideline for selecting the measurement method for surface topography assessment.

Inspection of the Nuclear Fuel Rod Deformation using an Image Processing (영상처리를 이용한 핵연료봉의 변형 검사)

  • Cho, Jai-Wan;Choi, Young-Soo
    • Journal of the Institute of Electronics Engineers of Korea SP
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    • v.47 no.1
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    • pp.91-96
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    • 2010
  • In this paper, a deformation measurement technology of the nuclear fuel rod is proposed. The deformation measurement system include high definition CCD or CMOS image sensor, lens, semiconductor laser line beam marker, and optical & mechanical accessories. The basic idea of the deformation measurement is to illuminate the outer surface of the fuel rod with collimated laser line beam at an angle of 45 degrees or higher. The relative motion of the fuel rod in the horizontal direction causes the illuminated laser line beam to move vertically along the surface of the fuel rod. The resulting change of laser line beam position in the surface of the fuel rod is imaged as the parabolic beam in the high definition CCD or CMOS image sensor. From the parabolic beam pattern, the ellipse model is extracted. And the slope of the long and the short axis of the ellipse model is found. The crossing point between the saddle point of the parabolic beam and the long & short axis of the ellipse model is taken as the feature of the deformed fuel rod. The vertical offset between feature points before and after fuel rod deformation is calculated. From the experimental results, $50\;{\mu}m$ inspection resolution is acquired using the proposed method, which is three times enhanced than the conventional criterion ($150\;{\mu}m$) of the guide for the inspection of the nuclear fuel rod.

Fiber Fabry-Perot type Optical Current Transducer with Frequency Ramped Signal Processing Scheme

  • Park, Youn-Gil;Seo, Wan-Seok;Lee, Chung-E.;Taylor, Henry-F.
    • Journal of the Optical Society of Korea
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    • v.2 no.2
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    • pp.74-79
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    • 1998
  • The use of a fiber Fabry-Perot interferometer (FFPI) as an optical current transducer is demonstrated. A conventional inductive pickup coil converts the time-varying current I(t) being measured to a voltage waveform V(t) applied across a piezeolectric strip to which the FFPI is bonded. The strip experiences a longitudinal expansion and contraction, resulting in an optical phase shift ${\phi}(t)$ in the fiber proportional to V(t). This phase shift is measured using a frequency-modulated semiconductor light source, photodiodes to monitor the reflected light from the FFPI and the laser power, and a digital signal processor. Calibration routines compute V(t) and I(t) from the measured phase shift at a l KHz rate. Response to 60 Hz ac over the design range 0-1300A rms is characterized Transient response of the FFPI transducer is also measured.

UV emission characterization of ZnO thin films depending on the variation of oxygen pressure (분위기 산소압변화에 따른 ZnO박막의 UV발광 특성분석)

  • Bae, Sang-Hyuck;Lee, Sang-Yeol
    • Proceedings of the KIEE Conference
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    • 1999.07d
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    • pp.1523-1525
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    • 1999
  • ZnO is a wide-bandgap II-VI semiconductor and has a variety of potential application. ZnO exhibits good piezoelectric, photoelectric and optic properties, and is good for a electroluminescence device. ZnO films have been deposited at (0001) shappire by PLD technique. Chamber was evacuated by turbomolecular pump to a base pressure of $1{\times}10^{-6}$ Torr Nd:YAG pulsed laser was operated at ${\lambda}=355nm$. The ZnO films were deposited at oxygen pressures from base to 500 mTorr. The substrate temperatures was increased from $200^{\circ}C$ to $700^{\circ}C$. At aleady works, UV emission and green-yellow PL was observed. In this work, ZnO films showed UV, violet, green and yellow emissions. UV emission was enhanced by increasing partial oxygen pressure. We investigated relationship between partial oxygen pressure and UV emission.

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Saturation Spectroscopy with Optical Pumping in $^{87}RD D_2$ Lines (루비듐-87 원자 $D_2$ 전이선에 대한 광펌핑 포화분광)

  • 이호성
    • Korean Journal of Optics and Photonics
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    • v.4 no.2
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    • pp.188-194
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    • 1993
  • By applying the Nakayama's theory of saturation spectroscopy to 87Rb $D_2$ lines, taking into account the optical pumping process, the relative intensities of the resonance signals were calculated for various polarization combinations of pump and probe beams. The saturated absorption spectra were observed with a linewidth-narrowed semiconductor laser. As the result, it was found that the theoretical calculations were in good agreement with the experimental observations in the case where the geomagnetic field was- shielded.

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A Study of Mastless Pattern Fabrication using Stereolithography (광조형을 이용한 마스크리스 패턴형성에 관한 연구)

  • 정영대;조인호;손재혁;임용관;정해도
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2002.05a
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    • pp.503-507
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    • 2002
  • Mask manufacturing is a high COC and COO process in developing of semiconductor devices, because of the mass production tool with high resolution. Direct writing has been thought to be one of the patterning method to cope with development or small-lot production of the device. This study focused on the development of the direct, mastless patterning process using stereolithography tool for the easy and convenient application to micro and miso scale products. Experiments are utilized by three dimensional CAD/CAM as a mask and photo-curable resin as a photo-resist in a conventional stereo-lithography apparatus. Results show that the resolution of the pattern was achieved about 300 micron because of complexity of SLA apparatus settings, inspite of 100 micro of inherent resolution. This paper concludes that photo resist and laser spot diameter should be adjusted to get finer patterns and the proposed method is significantly feasible to mastless and low cost patterning with micro and miso scale.

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