• 한국광학회:학술대회논문집
• /
• 한국광학회 2000년도 제11회 정기총회 및 00년 동계학술발표회 논문집
• /
• pp.276.2-278
• /
• 2000

In a recent years, a number of approaches have been studied, including passive, active, and hybrid mode-locking of semi-conductor lasers for short pulse generation and research has been devoted to achieve low timing-jitter operation since the timing jitter is unfavorable for system applications. Among the methods of mode locking, passive mode locking does not need external rf drives, and therefore the operation and fabrication procedures are simplified. In spite of these attractive advantages of passive mode-locked laser, it has critical drawbacks such as large timing jitter and the difficulty in synchronization with external circuits. Their inherent large timing jitter value was shown to be suppressed to certain levels by means of hybrid mode-locking technique$^{(1)}$ , where the saturable absorber section was modulated by an external signal with the cavity round trip frequency. Furthermore, the subharmonic mode-locking (SHML) technique alleviates the restrictions of high speed driving electronics. It has been demonstrated experimentally$^{(1)}$ that the hybrid subharmonic mode-locking technique has lead to significant reduction of the timing jitter. (omitted)

• 한국생산제조학회지
• /
• 제19권6호
• /
• pp.834-840
• /
• 2010

Photo lithography process is very important technology to fabricate highly integrated micro patterns with high precision for semiconductor and display industries. Up to now, mask type lithography process has been generally used for this purpose; however, it is not efficient for small quantity and/or frequently changing products. Therefore, in order to obtain higher productivity and lower manufacturing cost, the mask type lithography process should be replaced. In this study, a maskless lithography system using the DMD(Digital Micromirror Device) is developed, and the exposure condition and optical properties are analyzed and simulated for a single beam case. From the proposed experimental conditions, required exposure experiments were preformed, and the results were investigated. As a results, 10${\mu}m$ spots can be generated at optimal focal length.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2006년도 춘계학술대회 논문집
• /
• pp.331-332
• /
• 2006

Transport systems which are the important part of the factory automation have much influence on improving productivity. Object transport systems are driven typically by the magnetic field and conveyer belt. In recent years, as the transmission and processing of information is required more quickly, demands of optical elements and semiconductors increase. However, conventional transport systems are not adequate for transportation of those. The reason is that conveyor belts can damage precision optical elements by the contact force and magnetic systems can destroy the inner structure of semiconductor by the magnetic field. In this paper, the levitation transport system using ultrasonic wave is developed for transporting precision elements without damages. Vibration modes of each flexural beam are verified by using Laser Scanning Vibrometer.

• Applied Microscopy
• /
• 제41권2호
• /
• pp.89-98
• /
• 2011

Atom Probe Tomography는 원자 수준의 분해능으로 원소의 위치 및 조성 정보를 3차원으로 제공해 주는 분석 장비이다. APT의 우수한 성능에도 불구하고 반도체 등, 저전도성 물질 분석에는 그 동안 적용이 어려웠다. 그러나 특정 시료 내 위치의 시편을 가공할 수 있는 FIB 시편 제조법과 laser펄스를 이용한 전계증발법의 개발로 APT의 분석 영역이 반도체에서 절연체까지 크게 확대 되고 있다. 본 논문에서는 최근에 적용되기 시작한 MOS-FET, GaN LED, Si-Nanowire 등 전자소자에서의 APT분석 응용사례에 대하여 살펴보았다.

• Journal of Magnetics
• /
• 제12권4호
• /
• pp.144-148
• /
• 2007

We report on the observation of p-type conductivity and ferromagnetism in diluted magnetic semiconductor $(Zn_{0.97}Mg_{0.01}Mn_{0.02})O:P$ films grown on $SiO_2/Si$ substrates by pulsed laser deposition. The p-type conduction with hole concentration over $10^{18}cm^{-3}$ is obtained by codoping of Mg and P followed by rapid thermal annealing in an $O_2$ atmosphere. Structural and compositional analyses for the p-type $(Zn_{0.97}Mg_{0.01}Mn_{0.02})O:P$ films annealed at $800^{\circ}C$ indicates that highly c-axis oriented homogeneous films were grown without any detectable formation of secondary phases. The films were found to be transparent in the visible range. The magnetic measurements clearly revealed an enhancement of room temperature ferromagnetism by p-type doping.

• Journal of Magnetics
• /
• 제13권3호
• /
• pp.88-91
• /
• 2008

This study examined the effect of Sn co-doping on the transport and magnetic properties of Cr-doped $In_2O_3$ thin films grown on (100) silicon substrates by pulsed laser deposition. The experimental results showed that Sn co-doping enhances the magnetization and appearance of the anomalous Hall effect, and increases the carrier (electron) concentration. These results suggest that the conduction carrier plays an important role in enhancing the ferromagnetism of a laser-deposited Cr-doped $In_2O_3$ film, which may have applications in transparent oxide semiconductor spin electronics devices.

• 전자공학회논문지A
• /
• 제30A권4호
• /
• pp.28-39
• /
• 1993

In the international BISDN used satellite, the laser that has large BW has to be used as a carrier for transmitting a lot of visual, vocal, and data information. Interoptical satellite communication has now developed in theoretical and practical aspects. But the optical communication, between satellite and earth station, is hindered by atmospheric absorption, scattering, and turbulence. In this paper, it was supposed that 1Gbps information was transmitted by binary FSK and 50mW AlGaAs semiconductor laser was used as a optical source in the satellite communication link between geosynchronous orbit satellite and earth station. We analyzed the BER and the entire diameter of the noncoherently combined optical heterodyne receiver as el evation angle, and determined the number of the optical heterodyne rece ivers, which is necessary for the BER of the receiver to be less than 10$^{-9}$ by computer simulation under the clear weather condition. It is shown that the BER and the number of the optical heterodyne receivers decrease as the elevation angle increases. In the region used the same number of the optical heterodyne receivers, it is shown that the entire diameter of the receiver increases but the BER decreases as the elevation angle increases.

• 대한전자공학회논문지SD
• /
• 제40권8호
• /
• pp.572-579
• /
• 2003

vertical-cavity surface-emitting laser(VCSEL) 웨이퍼에서 측정한 반사 스펙트럼을 전달 매트릭스 방법으로 계산한 반사스펙트럼과 비교함으로써 비파괴적인 방법으로 구조적인 두께 오차가 발생한 층을 찾아 내고 오차의 크기를 추정하는 방법론을 제시하였다. DBR 층의 오차를 종합하여 나타낸 n-DBR 층의 두께 오차, 즉 유효 오차를 도입하면, 반사 스펙트럼의 모양은 유효 오차에만 의존한다는 사실에 이 방법의 근거를 두고 있다. 활성층 영역의 두께 오차는 Fabry-Perot 발진파장에만 영향을 주며, 랜덤 두께 오차의 표준 편차 값이 0.005 이하일 때에 측정과 계산된 반사 스펙트럼의 비교는 신뢰성을 갖는다. 이 방법론은 VCSEL 웨이퍼 제작시 측정되는 반사 스펙트럼을 이용하므로 비파괴적이며, 0.5 nm의 두께 오차를 찾아 낼 수 있을 정도로 정밀도가 높다.

• 대한전자공학회논문지SD
• /
• 제41권8호
• /
• pp.45-50
• /
• 2004

전류집속을 위하여 Vertical Cavity Surface Emitting Laser(VCSEL)에 임플랜트 공정으로 만들어지는 반 절연층의 깊이는 VCSEL의 특성 및 신뢰도에 많은 영향을 준다. 이 연구에서는 낮은 문턱전류와 높은 신뢰도의 관점에서 최적화된 임플랜트 깊이를 정하고, 전기적 미분특성을 사용하여 최적화된 임플랜트 깊이를 판정하는 간단한 방법을 제시하였다. 최적화된 임플랜트 깊이는 임플랜트 선단을 1 - λ cavity에서 p-DBR mirror 약 2 주기 위에 위치시키는 것이다. 이 최적화된 임플랜트 깊이는 임플랜트 영역 밑을 옆 방향으로 흐르는 누설전류의 크기로부터 구할 수 있다. 전기적 미분특성은 이 누설전류를 찾아내는 좋은 방법인데, 이 전기적 미분특성을 이용하면 임플랜트 깊이를 간단하고 빠르게 알아낼 수 있기 때문이다.

• 한국재료학회지
• /
• 제33권6호
• /
• pp.229-235
• /
• 2023

An all-perovskite oxide heterostructure composed of SrSnO₃/Nb-doped SrTiO₃ was fabricated using the pulsed laser deposition method. In-plane and out-of-plane structural characterization of the fabricated films were analyzed by x-ray diffraction with θ-2θ scans and φ scans. X-ray photoelectron spectroscopy measurement was performed to check the film's composition. The electrical transport characteristic of the heterostructure was determined by applying a pulsed dc bias across the interface. Unusual transport properties of the interface between the SrSnO₃ and Nb-doped SrTiO₃ were investigated at temperatures from 100 to 300 K. A diodelike rectifying behavior was observed in the temperature-dependent current-voltage (IV) measurements. The forward current showed the typical IV characteristics of p-n junctions or Schottky diodes, and were perfectly fitted using the thermionic emission model. Two regions with different transport mechanism were detected, and the boundary curve was expressed by ln I = -1.28V - 13. Under reverse bias, however, the temperature- dependent IV curves revealed an unusual increase in the reverse-bias current with decreasing temperature, indicating tunneling effects at the interface. The Poole-Frenkel emission was used to explain this electrical transport mechanism under the reverse voltages.