• Nuclear Engineering and Technology
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• v.43 no.2
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• pp.133-140
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• 2011

In this paper, a deformation measurement technology for nuclear fuel rods is proposed. The deformation measurement system includes a high-definition CMOS image sensor, a lens, a semiconductor laser line beam marker, and optical and mechanical accessories. The basic idea of the proposed deformation measurement system is to illuminate the outer surface of a fuel rod with a collimated laser line beam at an angle of 45 degrees or higher. For this method, it is assumed that a nuclear fuel rod and the optical axis of the image sensor for observing the rod are vertically composed. The relative motion of the fuel rod in the horizontal direction causes the illuminated laser line beam to move vertically along the surface of the fuel rod. The resulting change of the laser line beam position on the surface of the fuel rod is imaged as a parabolic beam in the high-definition CMOS image sensor. An ellipse model is then extracted from the parabolic beam pattern. The center coordinates of the ellipse model are taken as the feature of the deformed fuel rod. The vertical offset of the feature point of the nuclear fuel rod is derived based on the displacement of the offset in the horizontal direction. Based on the experimental results for a nuclear fuel rod sample with a formation of surface crud, an inspection resolution of 50 ${\mu}m$ is achieved using the proposed method. In terms of the degree of precision, this inspection resolution is an improvement of more than 300% from a 150 ${\mu}m$ resolution, which is the conventional measurement criteria required for the deformation of neutron irradiated fuel rods.

• Investigative and Clinical Urology
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• v.59 no.6
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• pp.392-398
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• 2018

Purpose: To evaluate the initial experience and outcome of photo-selective vaporization of the prostate (PVP) for benign prostatic hyperplasia (BPH) in Pakistan with the use of a 980 nm diode laser. Materials and Methods: A prospective study was performed from November 2016 to December 2017. A total of 100 patients diagnosed with bladder outlet obstruction secondary to BPH who planned for PVP were enrolled in the study. PVP was carried out with a diode laser at 980 nm (Biolitec Diode 180W laser) in a continuous wave with a 600 nm (twister) fiber. Baseline characteristics and perioperative data were compared. Postoperative outcomes were evaluated by International Prostate Symptom Score (IPSS), post void residual (PVR) and maximum urinary flow rate (Qmax) at 3 and 6 months after surgery. Results: The mean age was $65.82{\pm}10.42$, mean prostate size was $67.35{\pm}16.42$, operative time was $55.85{\pm}18.01$ and total energy was $198.68{\pm}49.12kJ$. At 3 months and 6 months, significant improvements were noted (p<0.001) in IPSS $7.04{\pm}1.69$ (-18.92), Qmax $19.22{\pm}4.75mL/s$ (+13.09) and and PVR $18.89{\pm}5.39mL$ (-112.80). Most frequent problems were burning micturition (35%) and terminal dysuria (29%). No significant difference in postoperative hemoglobin was seen in patients who were on anti-platelet drugs. Conclusions: PVP with a diode laser is a safe and effective procedure for the treatment of BPH and is also safe in patients who are on anti-platelet agents.

• Korean Journal of Optics and Photonics
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• v.33 no.1
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• pp.22-27
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• 2022

We fabricate a polarization-independent dielectric multilayer thin-film diffraction grating for a spectral-beam-combining (SBC) system with a simple grating structure and low aspect ratio. Due to the refractive index and thickness error of the manufactured thin films, the diffraction efficiency of the fabricated diffraction grating was lower than that of the design. The causes of the errors were analyzed, and it was confirmed through simulation that diffraction efficiency could be compensated through an additional coating on the manufactured diffraction grating. As a result of sputtering an additional Ta₂O₅ layer on a fabricated diffraction grating, the diffraction efficiency was corrected and a maximum 91.7% of polarization-independent diffraction efficiency was obtained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.430-430
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• 2008

Using multi plasma enhanced chemical vapor deposition system (Multi-PECVD), p-a-Si:H deposition layer as a $p^+$ region which was annealed by laser (Q-switched fiber laser, $\lambda$ = 1064 nm) on an n-type single crystalline Si (100) plane circle wafer was prepared as new doping method for single crystalline interdigitated back contact (IBC) solar cells. As lots of earlier studies implemented, most cases dealt with the excimer (excited dimer) laserannealing or crystallization of boron with the ultraviolet wavelength range and $10^{-9}$ sec pulse duration. In this study, the Q-switched fiber laser which has higher power, longer wavelength of infrared range ($\lambda$ = 1064 nm) and longer pulse duration of $10^{-8}$ sec than excimer laser was introduced for uniformly deposited p-a-Si:H layer to be annealed and to make sheet resistance expectable as an important process for IBC solar cell $p^+$ layer on a polished n-type Si circle wafer. A $525{\mu}m$ thick n-type Si semiconductor circle wafer of (100) plane which was dipped in a buffered hydrofluoric acid solution for 30 seconds was mounted on the Multi-PECVD system for p-a-Si:H deposition layer with the ratio of $SiH_4:H_2:B_2H_6$ = 30:120:30, at $200^{\circ}C$, 50 W power, 0.2 Torr pressure for 20 minutes. 15 mm $\times$ 15 mm size laser cut samples were annealed by fiber laser with different sets of power levels and frequencies. By comparing the results of lifetime measurement and sheet resistance relation, the laser condition set of 50 mm/s of mark speed, 160 kHz of period, 21 % of power level with continuous wave mode of scanner lens showed the features of small difference of lifetime and lowering sheet resistance than before the fiber laser treatment with not much surface damages. Diode level device was made to confirm these experimental results by measuring C-V, I-V characteristics. Uniform and expectable boron doped layer can play an important role to predict the efficiency during the fabricating process of IBC solar cells.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1504-1507
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• 1999

We have grown vertically aligned carbon nanotubes in a large area of Co-Ni codeposited Si substrates by the thermal CVD using $C_2H_2$ gas. Since the discovery of carbon nanotubes, Synthesis of carbon nanotubes for mass production has been achieved by several methods such as laser vaporization arc discharge, and pyrolysis. In particular, growth of vertically aligned nanotubes is of technological importance for applications to FED. Recently, vertically aligned carbon nanotubes have been grown on glass by PECVD Aligned carbon nanotubes can be also grown on mesoporous silica and Fe patterned porous silicon using CVD. Despite such breakthroughs in the growth, the growth mechanism of the alignment are still far from being clearly understood. Furthermore, FED has not been clearly demonstrated yet at a practical level. Here, we demonstrate that carbon nanotubes can be vertically aligned on catalyzed Si substrate when the domain density reaches a certain value. We suggest that steric hindrance between nanotubes at an initial stage of the growth forces nanotubes to align vertically and then nanotubes are further grown by the cap growth mechanism.

• Korean Journal of Optics and Photonics
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• v.17 no.6
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• pp.564-568
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• 2006

Using the cross-gain modulation (XGM) characteristics of semiconductor optical amplifiers (SOAs), multi-functional all-optical logic gates, including XOR, AND, and OR gates are successfully simulated and demonstrated at 10Gbit/s. A VPI component maker^TM simulation tool is used for the simulation of multi-functional all-optical logic gates and the10 Cbit/s input signal is made by a mode-locked fiber ring laser. A multi-quantum well (MQW) SOA is used for the simulation and demonstration of the all-optical logic system. Our suggested system is composed of three MQW SOAs, SOA-1 and SOA-2 for XOR logic operation and SOA-2 and SOA-3 for AND logic operation. By the addition of two output signals XOR and AND, all-optical OR logic can be obtained.

• Journal of the Semiconductor & Display Technology
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• v.8 no.4
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• pp.65-69
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• 2009

Carbon nanotubes (CNTs) were coated with undoped zinc oxide (ZnO) or 5 wt% gallium-incorporated ZnO (GZO) using various deposition conditions. The CNTs were directly grown on conical-type tungsten substrates at $700^{\circ}C$ using inductively coupled plasma-chemical vapor deposition. The pulsed laser deposition technique was used to deposit the ZnO and GZO thin films with very low stress. Field-emission scanning electron microscopy and high-resolution transmission electron microscopy were used to monitor the variations in the morphology and microstructure of CNTs prior to and after ZnO or GZO coating. The formation of ZnO and GZO films on CNTs was confirmed using energy-dispersive x-ray spectroscopy. In comparison to the as-grown (uncoated) CNT emitter, the CNT emitter that was coated with a thin (10 nm) GZO film showed remarkably improved field emission characteristics, such as the emission current of $325\;{\mu}A$ at 1 kV and the threshold field of $1.96\;V/{\mu}m$ at $0.1\;{\mu}A$, and it also exhibited the highly stable operation of emission current up to 40 h.

• Korean Journal of Optics and Photonics
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• v.8 no.5
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• pp.395-402
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• 1997

We have obtained the optimum thickness of anti-reflection(AR) coating on one of facets of a $\1.55mu\textrm{m}$ InGaAsP MQW FP semiconductor laser by in-site monitoring of the light emitted from the rear facet during the film deposition on the fore facet. The optimum thickness of $SiO_x$ thin film whose refractive index is 1.85 was found to be 188 nm. The reflectivity of the coated facet was calculated by the threshold current ratio of before and after AR coating, which was obtained from exprimental data, and it was about 2$\times$ $10^{-4}$. The results show that the output power is increased by 87% at bias current 60 mA, the slope efficiency is increased by 3.4 times, and the threshold current is increased by 2.64 times. By in-situ depositing of the $Si/SiO_2$ thin film HR coating on the rear facet, the output power was increased by 160% than before the AR and HR coatings, the slope efficiency was increased by 3.8 times, the threshold current was increased by 1.07 times, which is similar to the value of before AR coating. Due to the AR and HR coatings the output light power characteristics were enhanced.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.05a
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• pp.271-274
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• 2002

In this study, we fabricated the semiconductor laser for optical sensor with 1.55${\mu}{\textrm}{m}$wavelength region. In order to suppress lasing oscillation and to reduce the reflectivity, the devices of bending type were designed and fabricated. Their output power were 1.6㎽ at a pulse drive current of 100㎃. When the fabricated device was applied to optical fiber gyroscope, the output power of optical fiber was 540㎻ at a CW drive current of 100㎃, the full width at half maximum spectral width was 53nm. And the random-walk coefficient was measured to be 2.5$\times$10­$^3$deg/√hr, the gyro output drift was also found to be 0.3 deg/hr. So we confirmed the possibility of application to use for light source of optical fiber gyroscope.

• Journal of Navigation and Port Research
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• v.26 no.2
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• pp.235-243
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• 2002

Theoretical analysis have been performed to design the high power semiconductor laser for an optical sensor at 1.55${\mu}{\textrm}{m}$ wavelength range which is the lowest loss wavelength in optical fiber. The materials of active region and SCH were $Ln_{1-x}Ga_xAs_yP_{1-y}$. In order to use the light source of optical sensors, it has to satisfy wide spectral width and short coherence length. Therefore, in order to suppress lasing oscillation, we proposed laterally tilted PBH type with a window region. Also, tapered stripe structure was applied for high coupling efficiency into a single mode fiber. From these analyses, the devices of laterally tilted angled and bending structure were fabricated and their characteristics were measured. In the results of the measurement, the fabricated devices have sufficient output power and wide FWHM to apply to the light source of optical fiber sensors.