• Proceedings of the Optical Society of Korea Conference
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• 2000.08a
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• pp.30-31
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• 2000

파장 분할 다중 방식을 사용하는 모든 전광 통신망은 파장 재사용과 routing를 위해 반드시 파장 변환기를 필요로 한다. 본 논문에서는 반도체 광 증폭기와 반도체 레이저를 수평 결합시킨 새로운 구조를 제안함으로써 기존의 파장 변환기가 가졌던 문제점들을[1][2][3] 해결하고자 한다. 두개의 모드가 약하게 결합되었을 때는 그 파의 크기나 전파상수는 서로 영향을 미치게 된다. 예를 들면 수평결합 파장가변 LD[4]나 방향성 결합 파장 변환기[5]는 이 특성을 이용한 소자이다. 본 논문에서 제안된 소자도 이러한 결합모드 특성을 이용하였다. (중략)

• Korean Journal of Optics and Photonics
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• v.1 no.2
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• pp.191-197
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• 1990

An experiment on the phase stability of injection-locked beam is done by using AlGaAs semiconductor lasers. The coherence of two beams from the master and slave lasers is measured by interference between the beams in the Twymann-Green interferometer. The phase change of the output beam of the slave laser as a function of the driving current is measured in the Mach-Zehnder interferometer consisted of the master and slave lasers and a value of 2.5radlmA is obtainccl.

• Korean Journal of Optics and Photonics
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• v.11 no.3
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• pp.166-170
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• 2000

A wavelength tunable all-optical clock recovery using a semiconductor optical amplifier in a fiber ring cavity is proposed and demonstrated at the wavelength of 1530 nm to 1570 nm. A synchronized optical pulse train is recovered from 10 Gbps and 30 Gbps randomly generated optical pulse streams with injection locking technique. Also, the system responses to the perturbation and the input average power variation are analyzed by a large-signal model based on time-domain travelling wave equation. ation.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2001.11b
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• pp.1376-1383
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• 2001

Modem technology depends on the reliability of extremely high technology equipments. In the production of semiconductor wafer, optical and electron microscopes, ion-beam, laser device must maintain their alignments within a sub-micrometer. This equipment requires a vibration free environment to provide its proper function. Especially, lithography and inspection devices, which have sub-nanometer class high accuracy and resolution, have come to necessity for producing more improved giga and tera class semiconductor wafers. This high technology equipments require very strict environmental vibration standard, vibration criteria, in proportion to the accuracy of the manufacturing, inspecting devices. The vibration criteria of high sensitive equipment should be represented in the form of 'exactness' and 'accuracy', because this is used as basic data for the design of building structure and structural dynamics of equipment. This paper deals with the properties of time and frequency domain in order to obtain more improved vibration criteria for high sensitive equipment.

• Journal of the Semiconductor & Display Technology
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• v.21 no.4
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• pp.163-167
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• 2022

In this paper, an optimization design method of a diffuser using Bernoulli's theorem was reviewed. The aspect ratio of the cylindrical diffuser chamber and the diameter ratio of the air inlet and outlet were used as design parameters. For the optimal design of the cylindrical diffuser chamber, the air flow inside the chamber was simulated using ANSYS while changing the aspect ratio of the chamber. In order to confirm the simulation results, the diffuser manufactured using the laser processing machine was measured. Through ANSYS simulation and measurement, it was found that the optimal design condition was when the aspect ratio (chamber height/radius) of the diffuser chamber was 1/2 and the diameter ratio of the air inlet and outlet was also 1/2.

• Journal of Sensor Science and Technology
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• v.31 no.1
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• pp.12-15
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• 2022

In this study, we studied the effects of transfer gate on the photocurrent characteristics of gate/body-tied (GBT) metal-oxide semiconductor field-effect transistor (MOSFET)-type photodetector. The GBT MOSFET-type photodetector has high sensitivity owing to the amplifying characteristic of the photocurrent generated by light. The transfer gate controls the flow of photocurrent by controlling the barrier to holes, thereby varying the sensitivity of the photodetector. The presented GBT MOSFET-type photodetector using a built-in transfer gate was designed and fabricated via a 0.18-㎛ standard complementary metal-oxide-semiconductor (CMOS) process. Using a laser diode, the photocurrent was measured according to the wavelength of the incident light by adjusting the voltage of the transfer gate. Variable sensitivity of the presented GBT MOSFET-type photodetector was experimentally confirmed by adjusting the transfer gate voltage in the range of 405 nm to 980 nm.

• Korean Journal of Optics and Photonics
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• v.20 no.1
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• pp.41-47
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• 2009

We report the spectral characteristics of Multimode Interferometer (MMI)-coupled semicondoctor square ring resonators. The epitaxial layers of the proposed semiconductor ring resonator consists of $1.55{\mu}m$ GaInAsP-InP multiple quantum wells. The lasing characteristics were observed by varying the structure parameters of the MMI-coupled square ring resonators. It is concluded that the MMI-coupled scheme selects a single spectral lasing mode in the double square ring cavities.

• ETRI Journal
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• v.29 no.5
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• pp.633-640
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• 2007

We report an experimental demonstration of 40 Gbps all-optical 3R regeneration with all-optical clock recovery based on InP semiconductor devices. We also obtain alloptical non-return-to-zero to return-to-zero (NRZ-to-RZ) format conversion using the recovered clock signal at 10 Gbps and 40 Gbps. It leads to a good performance using a Mach-Zehnder interferometric wavelength converter and a self-pulsating laser diode (LD). The self-pulsating LD serves a recovered clock, which has an rms timing jitter as low as sub-picosecond. In the case of 3R regeneration of RZ data, we achieve a 1.0 dB power penalty at $10^{-9}$ BER after demultiplexing 40 Gbps to 10 Gbps with an eletroabsorption modulator. The regenerated 3R data shows stable error-free operation with no BER floor for all channels. The combination of these functional devices provides all-optical 3R regeneration with NRZ-to-RZ conversion.

• Korean Journal of Materials Research
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• v.23 no.9
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• pp.477-482
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• 2013

We investigated the detection properties of nitrogen monoxide (NO) gas using transparent p-type $CuAlO_2$ thin film gas sensors. The $CuAlO_2$ film was fabricated on an indium tin oxide (ITO)/glass substrate by pulsed laser deposition (PLD), and then the transparent p-type $CuAlO_2$ active layer was formed by annealing. Structural and optical characterizations revealed that the transparent p-type $CuAlO_2$ layer with a thickness of around 200 nm had a non-crystalline structure, showing a quite flat surface and a high transparency above 65 % in the range of visible light. From the NO gas sensing measurements, it was found that the transparent p-type $CuAlO_2$ thin film gas sensors exhibited the maximum sensitivity to NO gas in dry air at an operating temperature of $180^{\circ}C$. We also found that these $CuAlO_2$ thin film gas sensors showed reversible and reliable electrical resistance-response to NO gas in the operating temperature range. These results indicate that the transparent p-type semiconductor $CuAlO_2$ thin films are very promising for application as sensing materials for gas sensors, in particular, various types of transparent p-n junction gas sensors. Also, these transparent p-type semiconductor $CuAlO_2$ thin films could be combined with an n-type oxide semiconductor to fabricate p-n heterojunction oxide semiconductor gas sensors.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.16.1-16.1
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• 2009

We have fabricated solution processed oxide semiconductor active layer for thin film transistors (TFTs). The oxide semiconductor layers were prepared by ink-jet printing the sol-gel precursor solution based on doped-ZnO. Inorganic ZnO-based thin films have drawn significant attention as an active channel layer for TFTs applications alternative to conventional Si-based materials and organic semiconducting materials, due to their wide energy band gap, optical transparency, high mobility, and better stability. However, in spite of such excellent device performances, the fabrication methods of ZnO related oxide active layer involve high cost vacuum processes such as sputtering and pulsed laser deposition. Herein we introduced the ink-jet printing technology to prepare the active layers of oxide semiconductor. Stable sol-gel precursor solutions were obtained by controlling the composition of precursor as well as solvents and stabilizers, and their influences on electrical performance of the transistors were demonstrated by measuring electrical parameters such as off-current, on-current, mobility, and threshold voltage. Microstructure and thermal behavior of the doped ZnO films were investigated by SEM, XRD, and TG/DTA. Furthermore, we studied the influence of the ink-jet printing conditions such as substrate temperature and surface treatment on the microstructure of the ink-jet printed active layers and electrical performance. The mobility value of the device with optimized condition was about 0.1-1.0 $cm^2/Vs$ and the on/off current ratio was about $10^6$. Our investigations demonstrate the feasibility of the ink-jet printed oxide TFTs toward successful application to cost-effective and mass-producible displays.