• Journal of the korean academy of Pediatric Dentistry
• /
• v.30 no.1
• /
• pp.116-123
• /
• 2003

In children, they were presented pain and discomfort after surgical procedure. Some study has been suggested that Soft Laser promote healing process. So, the aim of the present study was to examine the effect of low power generating semiconductor laser on healing process after surgical procedure. DENS-BIO Laser applied to the wounds created by mesiodens extraction and lingual frenectomy. DENS-BIO Laser was irradiated on the wound with pulse 8(1000Hz) and 2mW, for 4 minutes. And then, healing process of surgical site was observed. The results from the present study can be summarized as follows : 1. In the irradiated wound, the healing process is more faster than not irradiation group. 2. Pain is less than not irradiation group.

• Korean Journal of Optics and Photonics
• /
• v.10 no.1
• /
• pp.73-79
• /
• 1999

Semiconductor optical switch modules of 1$\times$2, 1$\times$4, and 4$\times$4 types for 1550 nm optical communication systems were fabricated by using laser welding technique, embodying in 30-pin butterfly package. For better coupling efficiency between switch chip and optical fiber, tapered fibers of 10~15mm lens radii were used, which provided up to 60% optical coupling efficiency. With the help of new laser hammering process, we could recover the lost optical power almost completely up to average 82% of initially obtained power. The fabricated optical switch modules showed good thermal stability of less than 5% degradation even after 200 times thermal cycling test. The 2.5 Gbps optical transmission characteristics of the 4$\times$4 switch module showed low sensitivities of less than -30dB for all possible switching paths. The transmission penalties of 1$\times$2 switch module at $10^{-10}$ BER were 0.6dB and 0.7dB for 50Xm and 90 Km optical fibers, respectively.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2011.10a
• /
• pp.21.2-21.2
• /
• 2011

$Fe_3O_4$ having half metallic property is one of the efficient spin filtering materials which are widely used in spintronic research field and ZnO is wide band gap semiconductor which can be used by tunnel barrier or semiconductor channel in spin MOSFET. We investigated the magnetic and the electric properties of $Fe_3O_4$/ZnO multilayer fabricated on c-$Al_2O_3$ substrate by pulsed laser deposition (PLD). For multilayer films, PLD was performed at variable temperatures such as $200{\sim}750^{\circ}C$ and at target distance from 40 to 80 mm, KrF eximer laser of 1.5 $J/cm^2$ and a reputation rate of 2Hz. $Fe_3O_4$/ZnO multilayers were deposited at $4{\times}10^{-6}$ Torr. After fabricating $Fe_3O_4$/ZnO multilayers, $Fe_3O_4$/ZnO multilayers were treated by RTA(Rapid Thermal Annealing) at various temperature to change magnetic phase. The magnetism of the multilayer is changed by thickness of the ZnO tunnel barrier. Magnetic phase of FexOy showed a very small magnetism due to $Fe_2O_3$ ${\alpha}$-phase, but large magnetism from $Fe_3O_4$ or $Fe_2O_3$ ${\gamma}$-phase was observed. In the present study, effect of the ZnO thickness on the MR (magnetoresistance) ratio was investigated in detail.

• Korean Journal of Optics and Photonics
• /
• v.14 no.3
• /
• pp.321-326
• /
• 2003

We constructed grating- tuned external cavity semiconductor lasers using Littman and Littrow configuration, for which the wavelengths are tuned by rotation of the grating. This wavelength tunable semiconductor laser is one of the main devices of WDM optical communication. In Littman configuration, the wavelength range of about 60 nm (The C- and L-band range of 1,530~1,590 nm) was obtained by changing the incidence angle of the grating about $\pm$1$^{\circ}$ from the incidence angle of 70$^{\circ}$. In the 40 nm tuning range, the output power variation was less than 1.25 ㏈ and the side mode suppression ratio(SMSR) was 32 ㏈. In Littrow configuration (The incidence angle and the first order diffraction angle is the same, i.e. $\alpha$=$\delta$), the wavelength tuning range was about 80 nm for the same conditions used in Littman configuration except the incidence angle ($\alpha$=49$^{\circ}$). In 60 nm tuning range, the output power variation was less than 1.5 ㏈ and SMSR was 35 ㏈.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
• /
• 2000.11a
• /
• pp.36-39
• /
• 2000

A small electrical potential difference which appears on any solid body when subjected to illumination by a modulated light beam generated by laser is called photocharge voltage(PCV)[1,2]. This voltage is proportional to the induced change in the surface electrical charge and is capacitatively measured on various materials such as conductors, semiconductors, ceramics, dielectrics and biological objects. The amplitude of the detected signal depends on the type of material under investigation, and on the surface properties of the sample. In photocharge voltage spectroscopy measurements[3], the sample is illuminated by both a steady state monochromatic bias light and the pulsed laser. The monochromatic light is used to created a variation in the steady state population of trap levels in the surface and space charge region of semiconductor samples which does result in a change in the measured voltage. Using this technique the spatial variation of PCV can be utilized to evalulate the surface conditions of the sample and the variation of the PCV due to the monochromatic bias light are utilized to charactrize the surface states. A qualitative analysis of the proposed measuremen is present along with experimental results performed on amorphous silicon samples. The deposition temperature was varied in order to obtain samples with different structural, optical and electronic properties and measurements are related to the defect density in amorphous thin film.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2003.06a
• /
• pp.620-623
• /
• 2003

The material processing by using ultrashort pulse laser, in recently, is actively applying into the micro machining and nano-machining technology since ultrashort pulse has so faster than the time which the electrons energy absorbing photon energy is transmitted to surrounding lattice-phonon that it has many advantages in point of machining. The micro machining of metallic thin film on the plain glass is widely used in the fields such as mask repairing for semiconductor, fabrication of photonic crystal, MEMS devices and data storage devices. Therefore, it is important to secure the machining technology of the sub-micron size. In this research, we set up the machining system by using ultrashort pulse laser and conduct on the Cr 200nm thin film ablation experiments of spot and line with the variables such as energy, pulse number, speed, and so on. And we observed the characteristics of surrounding heat-affected zone and by-products appeared in critical energy density and higher energy density through SEM, and also examined the machining features between in He gas atmosphere which make pulse change minimized by nonlinear effect and in the air. Finally, the pit size of 0.8${\mu}{\textrm}{m}$ diameter and the line width of 1${\mu}{\textrm}{m}$ could be obtained.

• Journal of the Korean Society for Precision Engineering
• /
• v.26 no.6
• /
• pp.50-58
• /
• 2009

Micro laser fabrication techniques can potentially be used for the manufacture of microstructures on the thin flat surfaces with large diameter that are frequently used in semiconductor industries. However, the large size of wafers can cause the degraded machining accuracy of the surface because it can be tilted or distorted by geometric errors of machines or the holding fixtures, etc. To overcome these errors the off-line focusing error compensation method is proposed. By using confocal autofocus system, the focusing error profile of machined surface is measured along the pre-determined path and can be compensated at the next machining process by making the corrected motion trajectories. The experimental results for silicon wafers and invar flat surfaces show that the proposed method can compensate the focusing error within the level of below $6.9{\mu}m$ that is the depth of focus required for the laser micromachining process.

• Korean Journal of Optics and Photonics
• /
• v.20 no.6
• /
• pp.339-345
• /
• 2009

The high power and single mode vertical cavity surface emitting laser(VCSEL)s with photonic crystal structures have been proposed and fabricated by reducing substantially the hole numbers used in the photonic crystal structures. It is found that only six holes enable VCSELs to operate a single mode and the reliability can be enhanced by filling the holes with polyimide. The single mode lasing characteristics were analyzed by varying the oxide aperture and the hole diameter in photonic crystal structures. As a result, the single mode lasing can be stably obtained in the photonic crystal vertical cavity surface emitting lasers.

• Proceedings of the Korean Society of Propulsion Engineers Conference
• /
• 1995.05a
• /
• pp.171-175
• /
• 1995

Semiconductor diode lasers that can generate one watt or more of optical energy for tens of milliseconds (quasi continuous wave) are now readily available. Several researchers have demonstrated that this power level, when properly coupled, can reliably initiate pyrotechnic mixtures. This means that the initiator containing the pyrotechnic can be protected against inadvertent initiation from electromagnetic radiation or electrostatic discharge by a conducting Faraday cage surrounding the explosive. Only a small dielectric window penetrates the housing of the initiator, thereby eliminating the conductors necessitated by a bridgewire electroexplosive device. The diode laser itself, however, functions at a low voltage (typically 3 volts) and hence is susceptible to inadvertent function from power supply short circuits, electrostatic discharge or induced RF energy. The rocket motor arm-fire device de-scribed in this paper uses a diode laser, but protects it from unintentional function with a Radio Frequency Attenuating Coupler (RFAC).The RFAC, invented by ML Aviation, a UK company, transfers power into a Faraday cage via magnetic flux, thereby protecting the diode, its drive circuit and the pyrotechnic from all electromagnetic and electrostatic hazards. The first production application of a diode laser and RFAC device was by the Korean Agency for Defense Development.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.11a
• /
• pp.36-39
• /
• 2000

A small electrical potential difference which appears on any solid body when subjected to illumination by a modulated light beam generated by laser is called photocharge voltage(PCV)[1,2]. This voltage is proportional to the induced change in the surface electrical charge and is capacitatively measured on various materials such as conductors, semiconductors, ceramics, dielectrics and biological objects. The amplitude of the detected signal depends on the type of material under investigation, and on the surface properties of the sample. In photocharge voltage spectroscopy measurements[3], the sample is illuminated by both a steady state monochromatic bias light and the pulsed laser. The monochromatic light is used to created a variation in the steady state population of trap levels in the surface and space charge region of semiconductor samples which does result in a change in the measured voltage. Using this technique the spatial variation of PCV can be utilized to evaluate the surface conditions of the sample and the variation of the PCV due to the monochromatic bias light are utilized to characterize the surface states. A qualitative analysis of the proposed measurement is present along with experimental results performed on amorphous silicon samples. The deposition temperature was varied in order to obtain samples with different structural, optical and electronic properties and measurements are related to the defect density in amorphous thin film.