• Journal of the Semiconductor & Display Technology
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• v.1 no.1
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• pp.1-7
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• 2002

Modem technology depends on the reliability of extremely high precision equipments. In the production of semiconductor wafer, optical and electron microscopes, ion-beam, laser device must maintain their alignments within a sub-micrometer. This equipment requires a vibration free environment to provide its proper function. Therefore, this high technology equipments require very strict environmental vibration criteria because it is used as basic data for the design of building structure and structural dynamics of equipment. In this paper, the new approach is proposed to investigate the mismatch problem of time and frequency domain for vibration criteria of sensitive equipment. The proposed approach is based on a vibration measurement data and a relative transfer function which can be obtained by experiment or analysis.

• Bulletin of the Korean Chemical Society
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• v.33 no.12
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• pp.4063-4068
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• 2012

Oxide substrates in semiconductor-sensitized solar cells (SSSCs) have a great impact on their performance. $TiO_2$ has long been utilized as an oxide substrate, and other alternatives such as ZnO and $SnO_2$ have also been explored due to their superior physical properties over $TiO_2$. In the development of high-performance SSSCs, it is of significant importance to understand the effect of oxides on the electron injection and charge recombination as these two are major factors in dictating solar cell performance. In addition, elucidating the relationship between these two critical processes and solar cell performance in each oxide is critical in building up the basic foundation of SSSCs. In this study, ultrafast pump-probe laser spectroscopy and open-circuit decay analysis were conducted to examine the characteristics of three representative oxides ($TiO_2$, ZnO, and $SnO_2$) in terms of electron injection kinetics and charge recombination, and the implication of results is discussed.

• Korean Journal of Optics and Photonics
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• v.10 no.4
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• pp.294-300
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• 1999

The density matrix is solved more rigorously, compared with the third-order pertubation method used in the conventional theory, for a semiconductor laser amplifier. Then the coupled wave equations are derived to explain the wavelength conversion due to the spectral hole burning in the semiconductor optical amplifier. It is shown that our results can explain the effect of saturation of the population density on the electric polarization, which affects the four-wave mixing and wavelength conversion, better than the conventional theroy where the third-order pertubation is used.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.21 no.12
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• pp.3286-3292
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• 1996

An experimental results of optical requency locked loop with DFB semiconductor laser as VCO are presented. Using quadricorrelator as frequency difference detector and frequency off-set locking technique with 1GHz reference frequency, frequency locking range of 140MHz was achieved. This paper reports the design and realization details of the loop.

• Proceedings of the Optical Society of Korea Conference
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• 2004.07a
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• pp.132-133
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• 2004

• Proceedings of the Optical Society of Korea Conference
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• 2003.02a
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• pp.148-149
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• 2003

The parasitic effects due to the current blocking layer limit the bandwidth of the semiconductor laser diode. Thus, the parasitic response of various blocking layers was analyzed. The inin type was the best choice for the leakage current reduction and the bandwidth expansion.

• Proceedings of the Optical Society of Korea Conference
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• 2004.02a
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• pp.152-153
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• 2004

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2003.10a
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• pp.107-110
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• 2003

The sheet metal shearing process is normally used in the precision elements such as semi-conductor components. In precision elements, burrs usually reduce the quality of machined parts and cause interference, jamming and misalignment during assembly procedures and because of their sharpness, they can be safety hazard to personnel. Furthermore, not only burrs are hard to predict and avoid, but also deburring, the process of removing burrs, is time-consuming and costly. In order to get the burr-free parts, therefore, we developed the precise burr measuring system using the laser. Using the X-Y precious table, we used vertical measuring method. Through the laser measurement system, we gain the minute analog signal, so this signal was amplified by the electric circuit. Finally, we gained the realtime burr data using A/D converter, PC. By introducing the novel laser measuring method which employing vertical measurement mechanism, we could get fast and precious burr data. Through the experiments, the accuracy of the developed system is proved. The burr height measured during the punching process can be used for automatic deburring and in-situ aligning.

• Korean Journal of Optics and Photonics
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• v.13 no.4
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• pp.319-323
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• 2002

1.55 ${\mu}m$multi-quantum well (MQW) broad area laser diodes with different linewidth enhancement factors ($\alpha{-factor}$) of 2 and 4 were fabricated. The far-fields of the laser diodes were measured. It was observed that the full width at half maximum (FWHM) of the far-fields and the filamentations were reduced in the laser diodes for which the value of the $\alpha{-factor}$ was small. As injection current increased, the FWHM of the far-field also increased regardless of the a-factor. This phenomenon was explained by reduction of filament spacing as injection current increased.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.22 no.4
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• pp.643-651
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• 2013

This study applied a laser cleaning method (dry cleaning) that is used for cleaning semiconductor elements to dental implant cleaning. The lasers used in this study were pulsed fiber lasers with wavelengths of 1,064 and 532 nm. The peak output, energy per pulse, energy density per pulse, time of pulse experiment, and number of pulse experiments served as process variables for this study, and the variables were changed for each experiment. As a result, a laser with a wavelength of 532 nm showed much higher cleaning efficiency than its 1,064 nm counterpart. As the wavelength range decreased, the quantized energy increased and the reflection rate of the titanium used for the implant decreased; consequently, the energy absorption rate increased. Therefore, it is proposed that the energy density by wavelength has a greater influence on cleaning than does the output size.