• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2300-2302
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• 2005

Metal-Semiconductor-Metal type photodetector was fabricated with AlGaAs/InGaAs Quantum Well FET structures using simplified processing steps. The DC and RF responses were measured by 850nm wavelength injection laser. A DC responsivity in the quasisaturated regime was 0.45 A/W in CW measurements, and a bandwidth measured using a 850nm 40 ps pulsed laser was 16GHz. An electrical equivalent circuit model was extracted from measured S-parameter.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.4 no.3
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• pp.317-321
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• 2003

A conventional typewriter types letters by hammering a carbon ribbon which is attached at a paper. The laser typing process which write a micro pattern of Chrome on a silicon wafer has been developed. A glass that is coated with 100 nm Chrome (Carbon ribbon) is attached on a silicon wafer (paper). An Nd-Yag laser (hammer) is irradiated on the glass, and the Chrome is transferred on the silicon wafer. Micro patterns are made by controlling laser beam trajectory. The suggested micro pattering can be used at the high density data storage of TeraBit/in$^2$ or at the improvement of productivity of semiconductor manufacturing procedure.

• Journal of Institute of Control, Robotics and Systems
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• v.22 no.3
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• pp.186-191
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• 2016

This paper addresses the development of 3D data acquisition system (3D scanner) based laser structured-light image. The 3D scanner consists of a stripe laser generator, a conventional camera, and a rotation table. The stripe laser onto an object has distortion according to 3D shape of an object. By analyzing the distortion of the laser stripe in a camera image, the scanner obtains a group of 3D point data of the object. A simple semiconductor stripe laser diode is adopted instead of an expensive LCD projector for complex structured-light pattern. The camera has an optical filter to remove illumination noise and improve the performance of the distance measurement. Experimental results show the 3D data acquisition performance of the scanner with less than 0.2mm measurement error in 2 minutes. It is possible to reconstruct a 3D shape of an object and to reproduce the object by a commercially available 3D printer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.11
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• pp.969-975
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• 2000

Laser direct writing of micro-patterned copper lines has been achieved by pyrolytic decomposition of copper formate films (Cu(HCOO)$_2$.4$H_2O$), as a metallo-organic precursor, using a focused CW Ar$^{+}$ laser beam (λ=514nm) on PCB boards and glass substrates. The linewidth and thickness of the lines wee investigated as a functin of laser power and scan speed. The profiles of the lines were measured by scanning electron microscope (SEM), surface profiler ($\alpha$-step) and atomic force measured by scanning electron microscope (SEM), surface profiler ($\alpha$-step) and atomic force microscopy (AFM). The electrical resistivities of the patterned lines were also investigated as a function of laser parameters using probe station and semiconductor analyzer. We compared resistivities of the patterned copper lines with these of the Cu bulk. Resistivities decreased due to changes in morphology and porosity of the deposit, which were about 3.8 $\mu$$\Omega$cm and 12$\mu$$\Omega$cm on PCB and glass substrates after annealing at 30$0^{\circ}C$ for 5 minutes.s.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.3
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• pp.187-191
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• 2019

Advances in laser technology have enabled ultra-high-speed ultra-precise processing, thus expanding potential applications to the semiconductor, medical, and photovoltaic industries. In particular, laser scribing technology has been applied to the production of shingled solar modules. In this work, we analyze the effect of laser scribing conditions, e.g., scribing depth, on the characteristics of the resulting divided solar cells. When the scribing depth was greater than $100{\mu}m$, the solar cells were well separated. In addition, the desired scribing depths were reached in fewer scans when the laser spot overlap was 100%. The efficiency of the divided cells decreased due to the high series resistance at scribing depths of less than $100{\mu}m$. However, at scribing depths of approximately $100{\mu}m$, the series resistance was low and efficiency reduction was minimized.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.6
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• pp.1117-1121
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• 2007

We demonstrate a wavelength swept mode-locked ring laser for the frequency domain optical coherence tomography(FD OCT). A laser is constructed by using a semiconductor optical amplifier, fiber Fabry-Perot tunable filter and 2.6 km fiber ring cavity. Mode-locking is implemented by 2.6 km fiber ring cavity for matching the fundamental or harmonic of cavity roundtrip time to a sweep period. The wavelength sweeps are repetitively generated with the repetition period of 77.2 kHz which is the parallel resonance frequency of Fabry-Perot tunable filter for the low driving current consumption of the fiber Fabry-Perot tunable filter. The wavelength tuning range of the laser is more than FWHM of 61 nm centered at the wavelength of 1320 nm and the linewidth of the source is $0.014{\pm}0.002$ nm.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.7
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• pp.1393-1397
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• 2009

A high-speed wavelength swept laser, which is based on oscillation characteristics of a fiber Fabry-Perot tunable filter, is described. The laser is constructed by using a semiconductor optical amplifier, a fiber Fabry-Perot tunable filter, and 3.348 km fiber ring cavity. The wavelength sweeps are repeatatively generated with the repetition period of 61 kHz which is the first parallel oscillation frequency of the Fabry-Perot tunable filter for the low power consumption. Mode-locking is implemented by 3.348 km fiber ring cavity for matching the fundamental of cavity roundtrip time to the sweep period. The wavelength tuning range of the laser is 87 nm(FWHM) and the average output power is 1.284 mW.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.1
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• pp.119-128
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• 1995

We report hybrid and passive mode-locking results of tilted-stripe AlGaAs semiconductor laser traveling wave amplifiers with saturable absorbers. Dependence ofthe pulse width on the mode locking frequency, the bandwidth of spectral filters, and the bias current of the laser amplifier are investigated. We generate 4 ps optical pulses by using the hybrid mode locking technique. The repetition rate and the peak power of generated pulses are 516 MHz and 170 mW, respectively. The tuning range of uor mode locked laser is 10 nm with the center wavelength of 780 nm. We also generate 2.6 ps optical pulses with peak power of 830 mW by using the passive mode locking technique.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.26 no.9
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• pp.1727-1735
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• 2002

The usage of beam scanning type laser marker is rapidly increasing in the field of semiconductor equipment. A device called ″beam adjuster″ is employed to adjust the visible diode laser, which points the marking position for various setting. The device is very sensitive to manufacturing tolerance and assembly condition. Axiomatic approach has been applied to the design of the device. An existing design is analyzed based on the Independence Axiom. The existing design is found to violate the axiom. Two new designs are proposed to satisfy the Independence Axiom. The Information Axiom is utilized to evaluate the designs. A design is selected to have the minimum information content. The significance of this research is that a full cycle of axiomatic design is applied to a real engineering product.

• Proceedings of the KIEE Conference
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• 2006.04a
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• pp.234-236
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• 2006

Because of its long measurement range and ultra-precise resolution. the heterodyne laser interferometer systems are very common in various industry area such as semiconductor manufacturing. However the periodical nonlinearity property caused from frequency mixing is an obstacle to improve the high measurement accuracy in nanometer scale. In this paper to minimize the effect of nonlinearity, we propose an adaptive nonlinearity compensation algorithm. We first compute compensation parameters using least square (LS) with the capacitance displacement sensor as a reference input. We then update the parameters with recursive LS (RLS) while the values are optimized to modify the elliptical phase into circular one. Through comparison with some experimental results of laser system, we demonstrate the effectiveness of our proposed algorithm.