• 제목/요약/키워드: Semiconductor gas sensor

검색결과 195건 처리시간 0.023초

감지 패턴 인식에 의한 가스센서의 선택성 연구 (A Study on the Selectivity of Gas Sensors by Sensing Pattern Recognition)

  • 이성필
    • 센서학회지
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    • 제20권6호
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    • pp.428-433
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    • 2011
  • We report on the building of a micro sensor array based on typical semiconductor fabrication processes aimed at monitoring selectively a specific gas in ambient of other gases. Chemical sensors can be applied for an electronic nose and/or robots using this technique. Microsensor array was fabricated on the same chip using 0.6${\mu}m$ CMOS technology, and unique gas sensing patterns were obtained by principal component analysis from the array. $SnO_2$/Pt sensor for CO gas showed a high selectivity to buthane gas and humidity. $SnO_2$ sensor for hydrogen gas, however, showed a low selectivity to CO and buthane gas. We can obtain more distinguishable patterns that provide the small sensing deviation(the high seletivity) toward a given analyte in the response space than in the chemical space through the specific parameterization of raw data for chemical image formation.

LGT를 이용한 고온, 고압용 동압 센서 개발 (Development of the high-temperature, high-pressure Dynamic pressure sensor with LGT)

  • 권혁제;이경일;김동수;김영덕;이영태
    • 반도체디스플레이기술학회지
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    • 제11권2호
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    • pp.17-21
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    • 2012
  • This study developed a high-temperature, high-pressure dynamic pressure sensor using LGT(lanthanum gallium tantalate). The sensitivity of the fabricated dynamic pressure sensor was 2.1 mV/kPa and its nonlinearity was 2.5%FS. We confirmed that the high-temperature dynamic pressure sensor operated stably in high-temperature environment at $500^{\circ}C$. The developed dynamic pressure sensor using LGT is expected to be applicable not only to gas turbines but also in various industrial areas in duding airplanes and power stations.

Sensing Characterization of Metal Oxide Semiconductor-Based Sensor Arrays for Gas Mixtures in Air

  • Jung-Sik Kim
    • 한국재료학회지
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    • 제33권5호
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    • pp.195-204
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    • 2023
  • Micro-electronic gas sensor devices were developed for the detection of carbon monoxide (CO), nitrogen oxides (NOx), ammonia (NH3), and formaldehyde (HCHO), as well as binary mixed-gas systems. Four gas sensing materials for different target gases, Pd-SnO2 for CO, In2O3 for NOx, Ru-WO3 for NH3, and SnO2-ZnO for HCHO, were synthesized using a sol-gel method, and sensor devices were then fabricated using a micro sensor platform. The gas sensing behavior and sensor response to the gas mixture were examined for six mixed gas systems using the experimental data in MEMS gas sensor arrays in sole gases and their mixtures. The gas sensing behavior with the mixed gas system suggests that specific adsorption and selective activation of the adsorption sites might occur in gas mixtures, and allow selectivity for the adsorption of a particular gas. The careful pattern recognition of sensing data obtained by the sensor array made it possible to distinguish a gas species from a gas mixture and to measure its concentration.

Pattern recognition using AC treatment for semiconductor gas sensor array

  • Nguyen, Viet-Dung;Joo, Byung-Su;Huh, Jeung-Su;Lee, Duk-Dong
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2003년도 하계종합학술대회 논문집 Ⅲ
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    • pp.1549-1552
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    • 2003
  • Semiconductor gas sensor using tin oxide as sensing material has been used to detect gases based on the fact that impedance of the sensing material varies when the gas sensor is exposed to the gases. This variation comprises of two parts. The first one is variation in resistance of the sensing material and the other is expressed in terms of the sensor capacitance variation. Normally, only variation of the sensor resistance is considered. In this paper, using AC measurement with a capacitor-coupled inverting amplifier circuit, both changes in the sensor resistance and variations in the sensor capacitance were investigated. These characteristics were represented as magnitude gain and phase shift of AC signal at a specific frequency after passing it through the sensor and the designed circuit. A two-stage artificial neural network, which utilized the information above, was employed to identify and quantify three combustible gases: methane, propane and butane. The network outputs were approximately proportional to concentrations of test gases with reasonable level of error.

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Discrimination of Gasoline and Diesel Fuels Using Oxide Semiconductor Gas Sensors

  • Moon, Young Kook;Shin, Min Sung;Jo, Young-Moo;Lim, Kyeorei;Lee, Jong-Heun
    • 센서학회지
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    • 제27권4호
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    • pp.221-226
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    • 2018
  • Misfueling accidents significantly damage the engines of both gasoline and diesel vehicles, and should be avoided by rapid and accurate fuel discrimination. Gasoline fuel contains bioethanol. Thus, the detection of ethanol vapor produced by gasoline can be used to distinguish between gasoline and diesel. In the present study, Pt-doped $SnO_2$ hollow nanospheres, Mg-doped $In_2O_3$ hollow microspheres, and Pt-doped ZnO nanostructures have been used as gas sensors to discriminate between gasoline and diesel fuels. All three sensors are able to detect and discriminate between gases evaporating from gasoline and diesel. Among the sensors, the Mg-doped $In_2O_3$ hollow microspheres show a significant gas response (resistance ratio = 4.97) quickly (~3 s) after exposure to gasoline-evaporated gas at $225^{\circ}C$, but did not show any substantial response to diesel-evaporated gas. This demonstrates that gasoline and diesel fuels can be discriminated using small and cost-effective oxide semiconductor gas sensors.

산화물 반도체 박막 가스센서 어레이의 제조 및 수율 개선 (Fabrication and yield improvement of oxide semiconductor thin film gas sensor array)

  • 이규정;류광렬;허창우
    • 한국정보통신학회논문지
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    • 제6권2호
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    • pp.315-322
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    • 2002
  • 반도체 제조공정과 미세가공 기술을 이용하여 30$0^{\circ}C$의 동작온도에서 약 60㎽의 전력소모를 갖는 산화물 반도체 박막 가스센서 어레이를 제조하였다. 멤브레인의 우수한 열적 절연은 0.1$\mu\textrm{m}$ 두께의 Si$_3$N$_4$와 1$\mu\textrm{m}$ 두께의 PSG의 이중 층에 의한 것으로, 각각 LPCVD(저압화학 기상증착)와 APCVD(대기압 화학 기상증착)에 의해 제조되었다. 센서 어레이의 4가지 산화물 반도체 박막 감지물질로는 1wt.%Pd가 도핑된 SnO$_2$, 6wt.% $Al_2$O$_3$가 도핑된 ZnO, WO$_3$, ZnO를 이용하였으며, 제조된 초소형 산화물 반도체 박막 가스센서 어레이는 여러 가지 가스의 노출시 유용한 저항 변화를 나타내었고 감도는 감지 물질에 강하게 의존함을 알 수 있었다. 센서 소자의 공정 수율을 증진시키기 위하여 히터 부위를 함몰하는 공정 방법을 취하였으며, 그 결과 월등한 수율 개선을 도모할 수 있었다.

Pt 및 Pt-$SnO_2$를 전극으로 하는 SiC 쇼트키 다이오드의 CO 가스 감응 특성 (A study on CO gas sensing Characteristics of Pt-SiC $SnO_2$-pt-SiC Schottky Diodes)

  • 김창교;노일호;양성준;이재홍;이주헌
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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    • pp.805-808
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    • 2002
  • A carbon monoxide gas sensor utilizing Pt-SiC, Pt-SnO2-SiC diode structure was fabricated. Since the operating temperature for silicon devices in limited to 200oC, sensor which employ the silicon substrate can not at high temperature. In this study, CO gas sensor operating at high temperature which utilize SiC semiconductor as a substrate was developed. Since the SiC is the semiconductor with wide band gap. the sensor at above $700^{\circ}C$. Carbon monoxide-sensing behavior of Pt-SiC, Pt-SnO2-SiC diode is systematically compared and analyzed as a function of carbon monoxide concentration and temperature by I-V and ${\Delta}$I-t method under steady-state and transient conditions.

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Structural and Electrical Properties of WOx Thin Films Deposited by Direct Current Reactive Sputtering for NOx Gas Sensor

  • Yoon, Young-Soo;Kim, Tae-Song;Park, Won-Kook
    • 한국세라믹학회지
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    • 제41권2호
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    • pp.97-101
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    • 2004
  • W $O_{x}$-based semiconductor type thin film gas sensor was fabricated for the detection of N $O_{x}$ by reactive d.c. sputtering method. The relative oxidation state of the deposited W $O_{x}$ films was approximately compared by the calculation of the difference of the binding energy between Ols to W4 $f_{7}$2/ core level XPS spectra in the standard W $O_3$ powder of known composition. As the annealing temperature increased from 500 to 80$0^{\circ}C$, relative oxygen contents and grain size of the sputtered films were gradually increased. As the results of sensitivity ( $R_{gas}$/ $R_{air}$) measurements for the 5 ppm N $O_2$ gas, the sensitivity was 110 and the sensor showed recovery time as fast as 200 s. The other sensor properties were examined in terms of surface microstructure, annealing temperature, and relative oxygen contents. These results indicated that the W $O_3$ thin film with well controlled structure is a good candidate for monitoring and controlling of automobile exhaust.haust.t.t.t.

In2O3 에탄올 가스 센서의 가스 감응 특성에 미치는 첨가물 효과 (Effects of Additives on Gas Sensing Properties of In2O3 Ethanol Gas Sensor)

  • 최동한
    • 센서학회지
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    • 제23권3호
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    • pp.192-196
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    • 2014
  • The effects of additives on gas sensing properties of $In_2O_3$ ethanol gas sensor were investigated. Gas sensors were fabricated by the painting method. The $In_2O_3-La_2O_3-Pt$ sensor heat treated $400^{\circ}C$ displayed fast response and recovery behavior with a maximum sensitivity to ethanol gas in air at an operating temperature of $300^{\circ}C$.