• Korean Chemical Engineering Research
• /
• v.48 no.2
• /
• pp.218-223
• /
• 2010

The zinc oxide thin film, which can be applied as the gas sensor of a semiconductor type, was grown on the silicon substrate by CFR(continuous flow reaction) method in this study. The growth property and the electrical property of the zinc oxide thin films synthesized by CFR method were also investigated. Zinc acetate solutions of 0.005~0.02 M were used as the precursor for the preparation of zinc oxide thin films. The size of ZnO particles consisted on the zinc oxide thin film increased not only with increasing concentration of precursor, but also the thickness of thin film increased. The growth rate of zinc oxide thin film by CFR method was proportionably depend on the concentration of precursor and the uniform ZnO thin film was prepared when zinc acetate of 0.01 M is used as the precursor. The charged currents on the zinc oxide thin films were obtained as its electrical property by I-V meter, and increased agree with increasing the thickness of zinc oxide thin film. Thus, it was concluded that the charged current on the zinc oxide thin film can be controlled with changing concentration of precursor solution in CFR method. The charged currents on the zinc oxide thin films also decreased when ZnO thin film is exposed under hydrogen sulfide of 500 ppmv at $300^{\circ}C$ for 5 min. From these results, it could be confirmed that the zinc oxide thin film prepared by CFR method can be used for the detection of sulfur compounds.

• Transactions on Electrical and Electronic Materials
• /
• v.14 no.4
• /
• pp.211-215
• /
• 2013

Partial discharge diagnosis techniques using ultra high frequencies do not affect load movement, because there is no interruption of power. Consequently, these techniques are popular among the prevention diagnosis methods. For the first time, this measurement technique has been applied to the GIS, and has been tested by applying an extra high voltage switchboard. This particular technique makes it easy to measure in the live state, and is not affected by the noise generated by analyzing the causes of faults ? thereby making risk analysis possible. It is reported that the analysis data and the evaluation of the risk level are improved, especially for poor location, and that the measurement of Ultra high frequency (UHF) partial discharge of the real live wire in industrial switchgear is spectacular. Partial discharge diagnosis techniques by using the Ultra High Frequency sensor have been recently highlighted, and it is verified by applying them to the GIS. This has become one of the new and various power equipment techniques. Diagnosis using a UHF sensor is easy to measure, and waveform analysis is already standardized, due to numerous past case experiments. This technique is currently active in research and development, and commercialization is becoming a reality. Another aspect of this technique is that it can determine the occurrences and types of partial discharge, by the application diagnosis for live wire of ultra high voltage switchgear. Measured data by using the UHF partial discharge techniques for ultra high voltage switchgear was obtained from 200 places in Gumi, Yeosu, Taiwan and China's semiconductor plants, and also the partial discharge signals at 15 other places were found. It was confirmed that the partial discharge signal was destroyed by improving the work of junction bolt tightening check, and the cable head reinforcement insulation at 8 places with a possibility for preventing the interruption of service. Also, it was confirmed that the UHF partial discharge measurement techniques are also a prevention diagnosis method in actual industrial sites. The measured field data and the usage of the research for risk assessment techniques of the live wire status of power equipment make a valuable database for future improvements.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.19 no.9
• /
• pp.536-542
• /
• 2018

Tin dioxide, $SnO_2$, is a well-known n-type semiconductor that shows change in resistance in the presence of gas molecules, such as $H_2$, CO, and $CO_2$. Considerable research has been done on $SnO_2$ semiconductors for gas sensor applications due to their noble property. The nanomaterials exhibit a high surface to volume ratio, which means it has an advantage in the sensing of gas molecules. In this study, SnO nanoplatelets were grown densely on Si substrates using a thermal CVD process. The SnO nanostructures grown by the vapor transport method were post annealed to a $SnO_2$ phase by thermal CVD in an oxygen atmosphere at $830^{\circ}C$ and $1030^{\circ}C$. The pressure of the furnace chamber was maintained at 4.2 Torr. The crystallographic properties of the post-annealed SnO nanostructures were investigated by Raman spectroscopy and XRD. The change in morphology was confirmed by scanning electron microscopy. As a result, the SnO nanostructures were transformed to a $SnO_2$ phase by a post-annealing process.

• Journal of the Korean Wood Science and Technology
• /
• v.35 no.6
• /
• pp.65-72
• /
• 2007

The VOC (volatile organic compound) analyzer is devised to measure the four main aromatic hydrocarbon gases: toluene, ethylbenzene, xylene and styfene. It is not affected by ambient temperature and humidity. In addition, standby and measuring time of VOC Analyzer is a short as below 30 min and 8 min, respectively. Since the semiconductor gas sensor is supersensitive to gas components, it is not necessary to use a conventional gas concentrator or other complicated equipment. In this study, VOC emission behavior from 4 types paints (lacquer, urethane vanish, water-base paint, enamel paint) for wood-based panel was investigated using VOC Analyzer. After a specimen was spreaded on aluminum foil ($6.32{\times}6.32cm$) in $3{\ell}$ polyester bag, after 24 hours we could measure maximum VOC emission level that is a stabilized VOC value. Xylene of VOCs was high emitted from lacquer, urethane vanish and water-based paint, and TVOC (Toluene + Ethylbenzene + Xylene + Styrene) of lacquer was the highest emission concentration than another.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2001.04a
• /
• pp.613-617
• /
• 2001

The test items like as endurance, air leakage and oil endurance test is requested for reliability evaluation about O-ring which is a kind of core machinery accessories of semi-conduct manufacturing equipment. For verification of these, we design and manufactured a test system for endurance, air leakage and oil endurance of O-ring for semi-conduct manufacturing equipment, and also performed the test for two kinds of O-ring, as it were Viton and Kalretz. The characteristics of this test equipment consist in realization of the test conditions of semi-conduct manufacturing equipment and satisfying the test method. The test conditions are cut gas, vacuum grade, temperature and revolution numbers in the endurance test system, vacuum grade and temperature in the air leakage test system, temperature and time in the oil endurance test system. The separating test results for wearing which is an oil endurance test item, the wearing index of domestic produced Viton O-ring is higher than foreign product by 2%, wearing rate of Kalretz O-ring better than Viton O-ring by 17%, and particles existed in various place. The test result of air leakage which is measured through the RGA sensor used Helium, the vacuum grade was $10^-3$Torr. And the test result of oil endurance, the volume change rate was 7~15%. Hereafter, we intend to analysis the reliability test evaluation and to utilize for domestic manufacturing companies by establishing data base and developing reliability softwares.

• Journal of the Korean Vacuum Society
• /
• v.1 no.1
• /
• pp.126-133
• /
• 1992

This study deals with the crystal growth and the optical characteristics of CdS thin films activatedby silver. CdS:Ag thin films were deposited by using an electron beam evaporation(EBE) technique in vacuumof 1.5X 10-'torr, voltage of 4 kV, current of 2.5 mA and substrate temperature of 250$^{\circ}$C CdS:Ag photoconductivefilms prepared by EBE method show high photoconductivity after annealing at about 550"c for 0.5 h in air andAr gas.The grain size of CdS:Ag thin films annealed in Ar atmosphere (1 atm) was grown over 1 ym and the thicknessof the films is 4-5 pm. The analysis of X-ray diffraction patterns shows that the crystal structures are hexagonal.The diffraction line by (00.2) plane can only be observed, indicating that c-axis of hexagonal grows preferentiallyperpendicular to the substrate. The profiles of photoluminescence spectra of CdS:Ag films show Gaussian typecurves at room temperature, the maximum peak spectral sensitivity of CdS:Ag is located at the wavelength of520 nm.We annealed CdS:Ag thin films in air and Ar vapor in order to make the CdS photoconductors having theintensive photocurrent, the broad distribution of the photocurrent spectrum and the large value of the ratioof the photocurrent (pc) to the dark current(dc). We found that CdS:Ag thin films annealed in air atmospherewas the best one.air atmosphere was the best one.

• Journal of the Korean Institute of Intelligent Systems
• /
• v.14 no.5
• /
• pp.648-654
• /
• 2004

The Mass Flow Controller(MFC) has become crucial in semiconductor manufacturing equipments. It is an important element because the quality and the yield of a semiconductor process are decided by the accurate flow control of gas. Therefore, the demand for implementing the high speed and the highly accurate control of MFCs has been increasing. It is hard to find an article of the control algorithm applied to MFCs. But, it is known that commercially available MFCs adopt PID control algorithms. Particularly, when the system detects the flow by way of heat transfer, the MFC control problem includes the slow response and the nonlinearity. In this paper, MFC control algorithm with a superior performance to the conventional PID algorithm is discussed and the superiority is demonstrated through the experiment. A fuzzy controller was utilized in order to compensate the nonlinearity and the slow response, and the performance is compared with that of an MFC currently available in the market. The control system, in this paper, consists of a personal computer, the data acquisition board and the control algorithm carried out by LabWindows/CVI program on the PC. In addition, a method of estimating the actual flow from the sensor output with the slow response is presented. In conclusion, according to the result of the experiment, the proposed algorithm shows better accuracy and is faster than the conventional controller.

• Journal of Sensor Science and Technology
• /
• v.1 no.2
• /
• pp.173-181
• /
• 1992

Tantalum pentoxide($Ta_{2}O_{5}$) thin films on p-type (100) silicon wafer were fabricated by RF reactive sputtering. Physical properties and structure of the specimens were examined by XRD and AES. From the C-V analysis, the dielectric constant of $Ta_{2}O_{5}$ films was in the range of 10-12 in the reactive gas atmosphere in which 10% of oxygen gas is mixed. The ratio of Ta : 0 was 1 : 2 and 1 : 2.49 by AES and RBS examination, respectively. The heat-treatment at $700^{\circ}C$ in $O_{2}$ ambient led to induce crystallization. When the heat-treatment temperature was $1000^{\circ}C$, the dielectric constant was 20.5 in $O_{2}$ ambient and 23 in $N_{2}$ ambient, respectively. The crystal structure of $Ta_{2}O_{5}$ film was pseudo hexagonal of ${\delta}-Ta_{2}O_{5}$. The flat band voltage shift(${\Delta}V_{FB}$) of the specimens and the leakage current density were decreased for higher oxygen mixing ratio. The maximum breakdown field was 2.4MV/cm at the oxygen mixing ratio of 10%. The $Ta_{2}O_{5}$ films will be applicable to hydrogen ion sensitive film and gate oxide material for memory device.

• Journal of the Korean Applied Science and Technology
• /
• v.34 no.1
• /
• pp.50-57
• /
• 2017

Zinc oxide is, one of metal oxide semiconductor, harmless to human and environment-friendly. It has excellent chemical and thermal stability properties. Wurtzite-zinc oxide is a large band gap energy of 3.37 eV and high exciton binding energy of 60 meV. It can be applied to various fields, such as solar cells, degradation of the dye waste, the gas sensor. The photocatalytic activity of zinc oxide is varied according to the particle shape and change of crystallinity. Therefore, It is very important to specify the additives and the experimental variables. In this study, the zinc oxide were synthesized by using a microwave assisted hydrothermal synthesis. The precursor was used as the zinc nitrate, the pH value was controlled as 11 by NaOH. Surfactants are the ethanolamine, cetyltrimethylammonium bromide, sodium dodecyl sulfate, sorbitan monooleate was added by changing the concentration. The composite particles had the shape of a star-like, curcular cone, seed shape, flake-sphere. Physical and chemical properties of the obtained zinc oxide was characterized using x-ray diffractometer, field emission scanning electron microscopy, thermogravimetric analysis and optical properties was characterized using UV-visible spectroscopy, photoluminescence and raman spectroscopy.