• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 1997년도 한국자동제어학술회의논문집; 한국전력공사 서울연수원; 17-18 Oct. 1997
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• pp.664-667
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• 1997

For higher component density per chip, it is necessary to identify and control the semiconductor manufacturing process more stringently. Recently, neural networks have been identified as one of the most promising techniques for modeling and control of complicated processes such as plasma etching process. Since wafer states after each run using identical recipe may differ from each other, conventional neural network models utilizing input factors only cannot represent the actual state of process and equipment. In this paper, in addition to the input factors of the recipe, real-time tool data are utilized for modeling of 64M DRAM s-poly plasma etching process to reflect the actual state of process and equipment. For real-time tool data, we collect optical emission spectroscopy (OES) data. Through principal component analysis (PCA), we extract principal components from entire OES data. And then these principal components are included to input parameters of neural network model. Finally neural network model is trained using feed forward error back propagation (FFEBP) algorithm. As a results, simulation results exhibit good wafer state prediction capability after plasma etching process.

• 반도체디스플레이기술학회지
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• 제15권1호
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• pp.17-21
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• 2016

EUV (Extreme Ultraviolet) pellicle which protects a mask from contamination became a critical issue for the application of EUV lithography to high-volume manufacturing. However, researches of EUV pellicle are still delayed due to no typical manufacturing methods for large-scale EUV pellicle. In this study, EUV pellicle membrane manufacturing method using not only KOH (potassium hydroxide) wet etching process but also a water bath was suggested for uniform etchant temperature distribution. KOH wet etching rates according to KOH solution concentration and solution temperature were confirmed and proper etch condition was selected. After KOH wet etching condition was set, $5cm{\times}5cm$ SiNx (silicon nitride) pellicle membrane with 80% EUV transmittance was successfully manufactured. Transmittance results showed the feasibility of wet etching method with water bath as a large-scale EUV pellicle manufacturing method.

• 한국진공학회지
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• 제21권4호
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• pp.199-204
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• 2012

$SF_6$ 가스는 반도체 및 디스플레이 제조공정 중 건식식각 공정에서 널리 사용되는 가스이다. 하지만 $SF_6$ 가스는 대표적인 온실가스로서 지구 온난화에 큰 영향을 끼치기 때문에 반도체 및 디스플레이 공정에서 $SF_6$ 가스를 대체할 수 있는 가스의 연구가 필요한 상황이다. 그 후보군으로 떠오르고 있는 가스 중의 하나가 바로 $C_3F_6$ 가스이다. 이 가스를 이용하여 $Si_3N_4$ 박막을 건식식각 방법인 Reactive Ion Etching 공정을 수행하여 식각 특성에 관하여 연구하였으며, 흡착제 Zeolite 5A를 이용하여 식각공정 중 배출되는 가스 성분을 감소시켰다. Plasma Enhanced Chemical Vapor Deposition 장비를 이용하여 500 nm 두께의$Si_3N_4$ 박막을 증착하였으며, 노광 공정을 통해 패터닝을 한 후 Reactive Ion Etching 공정을 수행하였다. 그리고 Scanning Electron Microscope 장비를 이용하여 $Si_3N_4$ 박막의 식각된 단면과 식각율을 확인하였다. 또한 공정 후 흡착제 Zeolite 5A를 통과하기 전과 후에 배출되는 가스를 포집하여 Gas Chromatograph-Mass Spectrophotometry 장비를 이용하여 가스 성분을 측정 및 비교하였다.

• Journal of information and communication convergence engineering
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• 제3권4호
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• pp.187-190
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• 2005

High aspect ratio via-hole etching process has emerged as one of the most crucial means to increase component density for ULSI devices. Because of charge accumulation in via-hole, this sophisticated and important process still hold several problems, such as etching stop and loading effects during fabrication of integrated circuits. Indeed, the concern actually depends on accumulated charge. For monitoring accumulated charge during plasma etching process, charge-up monitoring sensor was fabricated and tested under some plasma conditions. This paper presents a neural network-based technique for analyzing and modeling several electrical performance of plasma charge-up monitoring sensor.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 1997년도 한국자동제어학술회의논문집; 한국전력공사 서울연수원; 17-18 Oct. 1997
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• pp.1500-1503
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• 1997

In this paper a multiple channel EPD controller is developed which enables us to detect endpoints simultaneously in the plasma etching process operated in multiple etching chambers and its performance characteristic are investigated. for the accurate detectiion of endpoint the developed EDP controller was able to implement endpoint detectiions by integrating the existing EPD controllers with the techiques of artificial intellignet, to enhance its performance. The performance of the developed EPD controller was carried out by repeated experiments of endpoint detection in the acrual production line of semiconductor manufacturing. It's utility for endpoint detectiion was accurately evaluated in various etching process. The control capability of multiple etching chambers enhances its application compared with the existing one, and also increases the user utility os that the efficiency of operation was improved.

• 한국진공학회지
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• 제5권2호
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• pp.169-174
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• 1996

The applications of the high density plasma sources to the etching in semiconductor fabrication process are actively studied because of the more strict requirement from the dry etching process due to shrinking down of the critical dimension. But in the oxide etching with the high density plasma sources, abundant fluorine atoms released from the flurocarbon feed gas make it difficult to get the highly selective $SiO_2/Si$ etching. In this study, to improve the $SiO_2/Si$ etch selectivity through the control of the radical loss channels, we propose the wall heating , one of methods of controlling loss mechanisms. With appearance mass spectroscopy(AMS) and actinometric optical emission spectroscopy(OES), the increase of both radicals impinging on the substrate and existing in bulk plasma, and the decrease of the fluorine atom with wall temperature are observed. As a result, a 40% improvement of the selectivity was achieved for the carbon rich feed gas.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.259-259
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• 2008

The LTCC (Low Temperature Co-fired Ceramic) technology meets the requirements for high quality microelectronic devices and microsystems application due to a very good electrical and mechanical properties, high reliability and stability as well as possibility of making integrated three dimensional microstructures. The wet process, which has been applied to the etching of the metallic thin film on the ceramic substrate, has multi process steps such as lithography and development and uses very toxic chemicals arising the environmental problems. The other side, Plasma technology like ion beam sputtering is clean process including surface cleaning and treatment, sputtering and etching of semiconductor devices, and environmental cleanup. In this study, metallic multilayer pattern was fabricated by the ion beam etching of Ti/Pd/Cu without the lithography. In the experiment, Alumina and LTCC were used as the substrate and Ti/Pd/Cu metallic multilayer was deposited by the DC-magnetron sputtering system. After the formation of Cu/Ni/Au multilayer pattern made by the photolithography and electroplating process, the Ti/Pd/Cu multilayer was dry-etched by using the low energy-high current ion-beam etching process. Because the electroplated Au layer was the masking barrier of the etching of Ti/Pd/Cu multilayer, the additional lithography was not necessary for the etching process. Xenon ion beam which having the high sputtering yield was irradiated and was used with various ion energy and current. The metallic pattern after the etching was optically examined and analyzed. The rate and phenomenon of the etching on each metallic layer were investigated with the diverse process condition such as ion-beam acceleration energy, current density, and etching time.

• Transactions on Electrical and Electronic Materials
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• 제15권4호
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• pp.221-225
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• 2014

Although gold wire bonding techniques have already matured in semiconductor manufacturing, weakly bonded wires in semiconductor chip assembly can jeopardize the reliability of the final product. In this paper, weakly bonded or failed aluminum bonding pads are analyzed using X-ray photoelectron spectroscopy (XPS), Auger electron Spectroscopy (AES), and energy dispersive X-ray analysis (EDX) to investigate potential contaminants on the bond pad. We found the source of contaminants is related to the dry etching process in the previous manufacturing step, and fluorocarbon plasma etching of a passivation layer showed meaningful evidence of the formation of fluorinated by-products of $AlF_x$ on the bond pads. Surface analysis of the contaminated aluminum layer revealed the presence of fluorinated compounds $AlOF_x$, $Al(OF)_x$, $Al(OH)_x$, and $CF_x$.

• 반도체디스플레이기술학회지
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• 제8권1호
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• pp.1-5
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• 2009

Typically, single-wafer wet etching is done by dispensing chemical onto the front and back side of spin wafer. The wafer is fixed by a number of chuck pins, which obstruct the chemical flow and would result in the incomplete removal of the remaining film, which can become a source of contamination in the next process. In this paper, we introduce a novel design of wafer chuck, in which chuck pins are groupped into two and each group of pins fixes the substrate alternatively. Two groups of chuck pins fix the high-speed spin substrate with non contact method using a magnetic material. The actual process has been executed to observe the effectiveness of this new wafer chuck. It was found that the new wafer chuck performed better than the conventional wafer chuck for removing the remaining film from the bevel and edge side of substrate.

• 반도체디스플레이기술학회지
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• 제18권4호
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• pp.30-34
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• 2019

We analyzed how the features in plasma information based virtual metrology (PI-VM) for SiO₂ etching depth with variation of 5% contribute to the prediction accuracy, which is previously developed by Jang. As a single feature, the explanatory power to the process results is in the order of plasma information about electron energy distribution function (PI_EEDF), equipment, and optical emission spectroscopy (OES) features. In the procedure of stepwise variable selection (SVS), OES features are selected after PI_EEDF. Informative vector for developed PI-VM also shows relatively high correlation between OES features and etching depth. This is because the reaction rate of each chemical species that governs the etching depth can be sensitively monitored when OES features are used with PI_EEDF. Securing PI_EEDF is important for the development of virtual metrology (VM) for prediction of process results. The role of PI_EEDF as an independent feature and the ability to monitor variation of plasma thermal state can make other features in the procedure of SVS more sensitive to the process results. It is expected that fault detection and classification (FDC) can be effectively developed by using the PI-VM.