• 한국결정성장학회지
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• 제32권4호
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• pp.121-127
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• 2022

초광역대 반도체인 β-Ga₂O₃은 고전력 반도체 소재에 대한 유망한 응용으로 인해 큰 주목을 받고 있다. 5가지 다른 다형 중 가장 안정적인 상인 β-Ga₂O₃는 4.9 eV의 넓은 밴드갭과 8 MV/cm의 높은 항복 전계를 갖는다. 또한, 이는 용융 소스로부터 성장될 수 있어 전력반도체용 SiC, GaN 및 다이아몬드와 같은 다른 와이드 밴드갭 반도체보다 더 높은 성장률과 더 낮은 제조 비용으로 성장이 가능하다. 이 연구에서 β-Ga₂O₃ 단결정 성장은 EFG(edge-defined film-fed growth) 방법에 의해 성장되었다. 성장 방향과 주면을 각각 β-Ga₂O₃ 결정의 [010] 방향과 (100)면으로 성장하였다. Raman 분석의 스펙트럼으로 β-Ga₂O₃ 잉곳의 결정상과 불순물을 확인하였고, 고해상도 X선 회절(HRXRD)을 이용하여 결정 품질과 결정 방향을 분석하였다. 또한 EFG 방법으로 성장한 β-Ga₂O₃ 리본형태의 잉곳을 각 위치별로 결정 품질과 다양한 특성을 체계적으로 분석하였다.

• Korean Chemical Engineering Research
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• 제61권4호
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• pp.576-583
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• 2023

본 연구에서는 전극의 전기 전도도 증대와 젖산 산화반응의 부산물인 과산화수소 생성 완화가 젖산 산화효소 전극 성능에 미치는 영향을 조사하였다. 유연성 있는 탄소종이 표면을 단일벽 탄소나노튜브로 개질하여 전극의 전기 전도도를 향상시켰다. 카탈라아제를 도입하여 젖산 산화반응에서 발생하는 과산화수소를 제거하였다. 젖산 산화효소와 카탈라아제가 동시에 고정화된 탄소종이 전극은 젖산 산화효소만 고정화된 탄소종이 전극보다 1.7배 많은 전류를 생성하였다. 단일벽 탄소나노튜브로 개질된 탄소종이 표면에 젖산 산화효소와 카탈라아제가 동시에 고정화된 전극은 171 µA의 전류를 생산하였는데, 이는 탄소종이 표면에 젖산 산화효소만 고정화된 전극이 생산하는 전류보다 2배 높은 값이다. 최적화된 전극은 젖산 농도가 20 mM까지 선형반응을 보여 센서용 전극으로 사용 가능함을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.239-240
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• 2008

As semiconductor devices are scaled down for better performance and more functionality, the Cu-based interconnects suffer from the increase of the resistivity of the Cu wires. The resistivity increase, which is attributed to the electron scattering from grain boundaries and interfaces, needs to be addressed in order to further scale down semiconductor devices [1]. The increase in the resistivity of the interconnect can be alleviated by increasing the grain size of electroplating (EP)-Cu or by modifying the Cu surface [1]. Another possible solution is to maximize the portion of the EP-Cu volume in the vias or damascene structures with the conformal diffusion barrier and seed layer by optimizing their deposition processes during Cu interconnect fabrication, which are currently ionized physical vapor deposition (IPVD)-based Ta/TaN bilayer and IPVD-Cu, respectively. The use of in-situ etching, during IPVD of the barrier or the seed layer, has been effective in enlarging the trench volume where the Cu is filled, resulting in improved reliability and performance of the Cu-based interconnect. However, the application of IPVD technology is expected to be limited eventually because of poor sidewall step coverage and the narrow top part of the damascene structures. Recently, Ru has been suggested as a diffusion barrier that is compatible with the direct plating of Cu [2-3]. A single-layer diffusion barrier for the direct plating of Cu is desirable to optimize the resistance of the Cu interconnects because it eliminates the Cu-seed layer. However, previous studies have shown that the Ru by itself is not a suitable diffusion barrier for Cu metallization [4-6]. Thus, the diffusion barrier performance of the Ru film should be improved in order for it to be successfully incorporated as a seed layer/barrier layer for the direct plating of Cu. The improvement of its barrier performance, by modifying the Ru microstructure from columnar to amorphous (by incorporating the N into Ru during PVD), has been previously reported [7]. Another approach for improving the barrier performance of the Ru film is to use Ru as a just seed layer and combine it with superior materials to function as a diffusion barrier against the Cu. A RulTaN bilayer prepared by PVD has recently been suggested as a seed layer/diffusion barrier for Cu. This bilayer was stable between the Cu and Si after annealing at $700^{\circ}C$ for I min [8]. Although these reports dealt with the possible applications of Ru for Cu metallization, cases where the Ru film was prepared by atomic layer deposition (ALD) have not been identified. These are important because of ALD's excellent conformality. In this study, a bilayer diffusion barrier of Ru/TaCN prepared by ALD was investigated. As the addition of the third element into the transition metal nitride disrupts the crystal lattice and leads to the formation of a stable ternary amorphous material, as indicated by Nicolet [9], ALD-TaCN is expected to improve the diffusion barrier performance of the ALD-Ru against Cu. Ru was deposited by a sequential supply of bis(ethylcyclopentadienyl)ruthenium [Ru$(EtCp)_2$] and $NH_3$plasma and TaCN by a sequential supply of $(NEt_2)_3Ta=Nbu^t$ (tert-butylimido-trisdiethylamido-tantalum, TBTDET) and $H_2$ plasma. Sheet resistance measurements, X-ray diffractometry (XRD), and Auger electron spectroscopy (AES) analysis showed that the bilayer diffusion barriers of ALD-Ru (12 nm)/ALD-TaCN (2 nm) and ALD-Ru (4nm)/ALD-TaCN (2 nm) prevented the Cu diffusion up to annealing temperatures of 600 and $550^{\circ}C$ for 30 min, respectively. This is found to be due to the excellent diffusion barrier performance of the ALD-TaCN film against the Cu, due to it having an amorphous structure. A 5-nm-thick ALD-TaCN film was even stable up to annealing at $650^{\circ}C$ between Cu and Si. Transmission electron microscopy (TEM) investigation combined with energy dispersive spectroscopy (EDS) analysis revealed that the ALD-Ru/ALD-TaCN diffusion barrier failed by the Cu diffusion through the bilayer into the Si substrate. This is due to the ALD-TaCN interlayer preventing the interfacial reaction between the Ru and Si.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.375-375
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• 2010

CdTe as an absorber material is widely used in thin film solar cells with the heterostructure due to its almost ideal band gap energy of 1.45 eV, high photovoltaic conversion efficiency, low cost and stable performance. The deposition methods and preparation conditions for the fabrication of CdTe are very important for the achievement of high solar cell conversion efficiency. There are some rearranged reports about the deposition methods available for the preparation of CdTe thin films such as close spaced sublimation (CSS), physical vapor deposition (PVD), vacuum evaporation, vapor transport deposition (VTD), closed space vapor transport, electrodeposition, screen printing, spray pyrolysis, metalorganic chemical vapor deposition (MOCVD), and RF sputtering. The RF sputtering method for the preparation of CdTe thin films has important advantages in that the thin films can be prepared at low growth temperatures with large-area deposition suitable for mass-production. The authors reported that the optical and electrical properties of CdTe thin film were closely connected by the thickness-uniformity of the film in the previous study [1], which means that the better optical absorbance and the higher carrier concentration could be obtained in the better condition of thickness-uniformity for CdTe thin film. The thickness-uniformity could be controlled and improved by the some process parameters such as vacuum level and RF power in the sputtering process of CdTe thin films. However, there is a limitation to improve the thickness-uniformity only in the preparation process [1]. So it is necessary to introduce the external or additional method for improving the thickness-uniformity of CdTe thin film because the cell size of thin film solar cell will be enlarged. Therefore, the authors firstly applied the chemical mechanical polishing (CMP) process to improving the thickness-uniformity of CdTe thin films with a G&P POLI-450 CMP polisher [2]. CMP process is the most important process in semiconductor manufacturing processes in order to planarize the surface of the wafer even over 300 mm and to form the copper interconnects with damascene process. Some important CMP characteristics for CdTe were obtained including removal rate (RR), WIWNU%, RMS roughness, and peak-to-valley roughness [2]. With these important results, the CMP process for CdTe thin films was performed to improve the thickness-uniformity of the sputtering-deposited CdTe thin film which had the worst two thickness-uniformities of them. Some optical properties including optical transmittance and absorbance of the CdTe thin films were measured by using a UV-Visible spectrophotometer (Varian Techtron, Cary500scan) in the range of 400 - 800 nm. After CMP process, the thickness-uniformities became better than that of the best condition in the previous sputtering process of CdTe thin films. Consequently, the optical properties were directly affected by the thickness-uniformity of CdTe thin film. The absorbance of CdTe thin films was improved although the thickness of CdTe thin film was not changed.

• Korean Chemical Engineering Research
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• 제60권2호
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• pp.249-254
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• 2022

최근 반도체와 같은 정보통신 기술의 발전과 함께 사물인터넷(IoT) 기술 발전이 급격히 이루어지면서 센서와 무선 통신 기능을 내장하여 주변 사물 및 환경 조건을 감지 및 분석하여 대응하는 원격 환경 모니터링 기술이 주목받고 있다. 하지만, 기 개발된 원격 환경 모니터링 시스템은 모두 별도의 전원 공급 장치를 필요로 하기 때문에 시·공간적 기기 사용의 제한을 야기하여, 사용자의 불편함을 유발할 수 있다. 따라서, 본 연구에서는 생체 역학적 에너지의 역학적 특성이 고려된 기구학적 설계 기반 전자기 발전 소자(Electromagnetic generator, EMG)를 개발함으로써 이의 에너지 자립형 원격 환경 모니터링 구동을 위한 전원 공급 장치로써 활용한다. 낮은 진동 주기 및 큰 진폭 변화의 역학적 특성을 지닌 생체 역학적 에너지를 효과적으로 이용하기 위해 자석의 기구학적 배치를 통한 깨지기 쉬운 힘의 평형을 유도하는 Levitation-EMG (L-EMG)를 설계했다. 이를 통해, L-EMG는 외부 진동에 민감하게 반응하여 자석과 코일 간의 효과적인 상대 움직임을 야기하여 고품질 전기 에너지 공급을 가능하게 했다. 뿐만 아니라, 실제 환경 감지 센서와 무선 통신 모듈의 필요 전력을 최소화하기 위한 마이크로 컨트롤러(Micro control unit, MCU)를 구성하였으며, 내장기능 중 저전력모드(Sleep mode)를 접목하여 소비전력의 최소화 및 이의 구동시간 증가를 달성했다. 최종적으로 사용자의 편의성을 극대화하기 위해 휴대폰 어플리케이션을 구축하여 손쉽게 주변 환경 모니터링을 가능하게 했다. 따라서, 이번 연구는 생체역학적 에너지를 이용한 에너지 자립형 원격 환경 모니터링 구축 가능성을 검증할 뿐만 아니라, 더 나아가 별도의 외부 전원 없이 주변 환경 모니터링이 가능한 설계 방안을 제시할 수 있다.