• 설비공학논문집
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• 제22권11호
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• pp.760-766
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• 2010

Excessive heat occurs during semiconductor manufacturing process. Thus, precise control of temperature is required to maintain constant chamber-temperature and also wafer-temperature in the chamber. Compared to an industrial chiller, semiconductor chiller's power consumption is very high due to its continuous operation for a year. Considering the high power consumption, it is necessary to develop an energy efficient chiller by optimizing operation control. Therefore, in this study, a semiconductor chiller is experimentally investigated to suggest energy-saving direction by conducting load change, temperature rise and fall and control precision experiments. The experimental study shows the cooling capacity of dual-channel chiller rises over 30% comparing to the conventional chiller. The time and power consumption in the temperature rising experiment are 43 minutes and 8.4 kWh, respectively. The control precision is the same as ${\pm}1^{\circ}C$ at $0^{\circ}C$ in any cases. However, it appears that the dual channel's control precision improves to ${\pm}0.5^{\circ}C$ when the setting temperature is over $30^{\circ}C$.

• 한국안전학회지
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• 제38권3호
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• pp.27-34
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• 2023

With the technological development of the semiconductor industry, the roles of electrical and thermal energy supply and control of semiconductor equipment in ultrafine processes have become very important. However, instances of electrical fires in the chiller heater, which is used for cooling in the semiconductor manufacturing process, are increasing. A fire occurs in combustibles due to high heat at the connection part of the chiller heater, that is, when the number of electrical wires in the connection part is reduced or when the wires are completely disconnected. In this study, the temperature characteristics were compared and analyzed through experiments and 3D simulations. The number of electrical wires, which is the connection part of the chiller heater, was reduced by 90%, 50%, 30%, 10%, and 5%, and the wires were completely disconnected. When the number of electrical wires was reduced by 5%, heat of up to 80℃ was generated, which is a relatively high temperature but insufficient to cause a fire in combustibles. Complete disconnection occurred due to the vibration of the motor and other components, and sparks and arcs were generated, resulting in a rapid increase in temperature to up to 680℃. When completely disconnected, the temperature increase was sufficient to cause a fire in the combustibles covering the terminal block. Therefore, in this study, the causes of electrical fires in chiller heaters were investigated and preventive measures were proposed by analyzing abnormal signals and thermal characteristics caused by the electrical wiring being reduced and completely disconnected.

• 대한기계학회논문집B
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• 제35권5호
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• pp.459-465
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• 2011

반도체 제조를 위한 공정에서는 과도한 열이 발생한다. 따라서 Chamber 내의 웨이퍼나 주변온도를 일정하게 유지할 수 있도록 온도의 정밀제어가 요구된다. 반도체 칠러는 산업용 칠러와는 다르게 운전조건이 24시간 년중 지속되므로 반도체 칠러는 전력소비량이 대단히 크며, 냉동기의 최적 운전제어를 통한 저소비전력 칠러 개발이 대단히 필요하다. 국내에서 판매되고 있는 반도체 칠러는 수입품에 비해 전력소비가 높아 제품 경쟁력이 낮은 실정이다. 이에 따라 본 연구에서는 국내에서 개발된 반도체 칠러에 관한 실험적 연구를 통하여 칠러의 부하변화 실험, 온도 상승 하강실험, 제어정밀도 실험 등을 통하여 칠러의 에너지절감 방향을 제시하고자 한다. 실험을 통하여 칠러의 냉각능력은 2.1~3.9 kW, EER은 0.56~0.93으로 측정되었다. 제어정밀도는 $0^{\circ}C$에서 ${\pm}1^{\circ}C$, $30^{\circ}C$ 이상 설정에서는 ${\pm}0.6^{\circ}C$로 향상되는 것으로 나타났다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2011년도 춘계학술대회 논문집
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• pp.387-388
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• 2011

• 대한기계학회논문집B
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• 제35권12호
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• pp.1285-1292
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• 2011

본 연구에서는 전자식 팽창밸브를 적용한 반도체 공정용 칠러에 관한 실험적 연구를 통해 시스템 특성을 파악하였다. 또한 온도 변화에 따른 신속한 대응을 할 수 있도록 온도상승 및 하강실험, 부하변화에 따른 온도영역별 제어정밀도 실험을 함으로써 각 제어 방식에 따른 운전 특성을 파악하였다. 온도상승 시 소비전력은 8.9 kW로 측정되었으며 CH1이 37.5분, CH2가 39.5분이 소요되었으며, 온도하강에는 총 26.5분이 소요되었다. 부분부하가 적용되는 경우 전부하가 적용되는 경우에 비해 제어정밀도의 변화폭이 큰 것으로 나타났으며 스텝모터 구동방식을 적용한 CH2의 제어정밀도가 상대적으로 우수한 것으로 나타났다. 냉각수를 이용한 냉각사이클 영역에서 소비전력은 1.8 kW로 냉동사이클을 적용한 방식에 비해 절반가량으로 감소된 것으로 나타났다. 본 연구는 실험결과를 바탕으로 반도체 공정용 칠러의 최적제어방안을 제시하였다.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2007년도 춘계학술대회
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• pp.230-233
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• 2007

A system of anodic process of aluminum thin film has implemented for nanofabrication. The manufactured equipment consists of three main parts: chiller, reaction bath and power supply. The chiller module consists of refrigeration compressor, copper tube and coolant with a thermostat. The reaction bath has kept in same temperature as a thermodynamic canonical ensemble system during the anodic reaction process. The magnetic bar has stirred oxalic acid in bath for uniform reaction. The DC power supply has applied into two electrodes, aluminum for anode and platinum for cathode in the oxalic acid. The anodization process results in the formation of nanoporous thin films.