• Journal of the Korean Ceramic Society
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• v.40 no.10
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• pp.991-997
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• 2003

The effect of A1$_4$C$_3$ additive on the thermoelectric properties of SiC ceramics were studied. Porous SiC ceramics with 47∼59% relative density were fabricated by sintering the pressed $\alpha$-SiC powder compacts with A1$_4$C$_3$at 2100∼220$0^{\circ}C$ for 3 h in Ar atmosphere. Crystalline phases of the sintered bodies were identified by powder X-Ray Diffraction (XRD) and their microstructures were observed with a Scanning Electron Microscope (SEM). In the case of A1$_4$C$_3$ addition, the phase transformation of 6H-SiC to 4H-SiC could be observed during sintering. The Seebeck coefficient and electrical conductivity were measured at 550∼95$0^{\circ}C$ in Ar atmosphere. In the case of undoped specimens, the Seebeck coefficients were positive (p-type semiconducting) possibly due to a dominant effect of the acceptor impurities (Al, Fe) contained in the starting powder and electrical conductivity increased as increasing sintering temperature. Electrical conductivity of A1$_4$C$_3$doped specimen is larger than that of undoped specimen under the same condition, which might be due to the reverse phase transformation and increasing of carrier density. And the Seebeck coefficient of A1$_4$C$_3$ doped specimen is also larger than that of undoped specimen. The density of specimen, the amount of addition and sintering atmosphere had significant effects on the thermoelectric property.

• Korean Journal of Materials Research
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• v.3 no.5
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• pp.553-561
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• 1993

In this study, thr effect of $Bi_2O_3$ and BN addition as grain boundary modifiers on sintering and electrical properties of semiconducting PTCR(Positive Temperature Coefficient of Resistivity) mate rial were analyzed using TMA, XRD and Complex Impedance Spectroscopy method. Bismut.h Ox~de and Boron Nitride were added to Y-doped $BaTiO_3$ respectively. Bismuth sesquioxide up to O.lmol%solubil~ ty limit of $Bi_2O_3$ in Y--$BaTiO_3$ ceramics-retarded densification and grain growth, and further addition mitigated these retardation effects. The resistivity at room temperature increased with increasing amount of $Bi_2O_3$ and thus decreased the PTCR effect, probably due to the $Bi_2O_3$ segregation on the grain boundaries. From the complex ~mpedance pattern, it is known that the grain boundary resisitivity is dominant on the whole resistivity of sample. In the result of applying the defect chemistry, $Bi^{3+} \;and \; Bi^[5+}$ are substituted for Ua and Ti site, respectively. Boron nitride decomposed and formed liquid phase among the $BaTiO_3$ grains. The decomposed com~ ponents made the second phase and existed the tr~ple juntion from the result of EPMA. From the complex impendencc pattern, the gram and grain boundary resistivity were small. The grain size increased with increasing BN contents, and decreased grain boundary resistivity enhanced the PTCR effect.

• Journal of the Korean Ceramic Society
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• v.40 no.9
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• pp.842-848
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• 2003

Semiconducting $\alpha$-Fe$_2$O$_3$ film was prepared by the cathodic electrodeposition method on Indium Tin Oxide (ITO) substrate for photoelectrochemical cell application. After heat treatment at 50$0^{\circ}C$, the phase was changed from Fe to $\alpha$-Fe$_2$O$_3$. The phase, morphology, absorbance, and photocurrent density (A/$\textrm{cm}^2$) of the film depended on the preparation conditions: deposition time, applied voltage, and the duration of heat treatment. The $\alpha$-Fe$_2$O$_3$ film was characterized by X-Ray Diffractometer (XRD), Scanning Electron Microscope (SEM), and UV -Visible Spectrophotometer. The stability of the $\alpha$-Fe$_2$O$_3$ film in aqueous solution was tested at zero bias potential under the white-light source of 100 mW/$\textrm{cm}^2$. The apparent grain size of the films formed at -2.0 V was larger than that grown at -2.5 V. The $\alpha$-Fe$_2$O$_3$ film deposited at -2.0 V for 180 s and heat-treated at 50$0^{\circ}C$ for 1 h showed the predominant photocurrent of 834$\mu$A/$\textrm{cm}^2$.