• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.108.1-108
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• 1998

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.105.4-105
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• 1998

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1998.08a
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• pp.108.4-108
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• 1998

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.98.3-98
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• 1998

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.3
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• pp.227-234
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• 2000

Electrical conduction characteristics of crosslinked polyethylene(XLPE) were investigated using an electrode made of semicon material containing a surfactant. When the semicon material is used as an electrode the conduction of XLPE obeys a space charge limited conduction(SCLC) mechanism which holds true for both control and surfactant-containing semicon electrodes. Conduction currents get higher with the addition of surfactant in the semicon electrodes while the charge mobility increases with the increase of surfactant content in the semicon electrode. The diffusion of surfactant molecules into the XLPE was confirmed via a $\mu$-FTIR analysis. It was found through a measurement of spatial charge distributions that the surfactant in the semicon electrodes enhances the injection of negative charge into the XLPE from the electrode. Experimental results and their origins are discussed in detail.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.203-206
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• 1998

Effects of types of semicon compounds on electrical properties of XLPE were investigated. The amounts of charge of XLPE were changed with the contents of additive included in semicon electrodes, but homocharge in cathode was observed. In the aging experiment under high voltage, it was found that semiconductive layer with high impurity contents played an important role in the decrease of ACBD strength of XLPE.

• Proceedings of the Materials Research Society of Korea Conference
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• 1996.05a
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• pp.10-10
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• 1996

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.138.2-138
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• 1998

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.47-51
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• 2000

A modified direct bonding technique employing a wet chemical deposition of $SiO_2$ film on a wafer surface to be bonded is proposed for the fabrication of Si-$SiO_2$-Si structures. Structural and electrical quality of the bonded wafers is studied. Satisfied insulating properties of interfacial $SiO_2$ layers are demonstrated. Elastic strain caused by surface morphology is investigated. The diminution of strain in the grooved structures is semi-quantitatively interpreted by a model considering the virtual defects distributed over the interfacial region.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.338-344
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• 1996

This study was an investigation of plasma-induced damages on silicon substrate in the semiconductor manufacturing technology. The plasma-induced damage level on silicon substrate was analyzed and compared in various plasma etching systems. The analysis methods were therma wave, life-time recovery, SCA (Surface Charge Analyzer) and TRXF (Total Reflection X-ray Fluorescence) measurements, and the measured values were compared for each systems. In the comparison of the values which were obtained by a system that had low life-time recovery, there was not any differences in DC parameters. However, the reflesh time distribution of device of that system had decreased about 10 to 20m sec compared to a system which had high life-time recovery.