• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.285-285
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• 2013

Recently, hexagonal boron nitride (h-BN), which is III-V compound of boron and nitride by strong covalent sp2 bonds has gained great interests as a 2 dimensional insulating material since it has honeycomb structure with like graphene with very small lattice mismatch (1.7%). Unlike graphene that is semi-metallic, h-BN has large band gap up to 6 eV while providing outstanding properties such as high thermal conductivity, mechanical strength, and good chemical stability. Because of these excellent properties, hBN can potentially be used for variety of applications such as dielectric layer, deep UV optoelectronic device, and protective transparent substrate. Low pressure and atmospheric pressure chemical vapor deposition (LPCVD and APCVD) methods have been investigated to synthesize h-BN by using ammonia borane as a precursor. Ammonia borane decomposes to polyiminoborane (BHNH), hydrogen, and borazine. The produced borazine gas is a key material that is a used for the synthesis of h-BN, therefore controlling the condition of decomposed products from ammonia borane is very important. In this paper, we optimize the decomposition of ammonia borane by investigating temperature, amount of precursor, and other parameters to fabricate high quality monolayer h-BN. Synthesized h-BN is characterized by Raman spectroscopy and its absorbance is measured with UV spectrophotometer. Topological variations of the samples are analyzed by atomic force microscopy. Scanning electron microscopy and Scanning transmission Electron microscopy are used for imaging and analysis of structures and surface morphologies.

• 한국식품과학회지
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• 제32권5호
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• pp.1128-1134
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• 2000

본 연구는 해풍에서 반건조된 꽁치(Cololabis seira)로 만든 과메기에 대한 감마선 조사에 의한 품질 특성을 평가하기 위해 수행되었다. 과메기의 가식부위를 준비하여, 진공포장하고, 3과 5 kGy에서 각각 감마선을 조사한 후 $5^{\circ}C$에 저장하였다. VBN및 TMA 함량은 조사직후 차이는 없었고, 저장 중 감마선 조사선량이 증가할수록 함량의 증가가 억제되는 것으로 나타났다. 조사직후 TBA는 모든 처리구에서 차이가 없었고 저장 중 증가하였으나, 감마선 조사에 의한 영향은 없었다. 휘발성 향기성분은 감마선 조사에 의해 전체적인 함량이 줄어들었다. 과메기의 물성은 감마선 조사구의 경우 저장 60일째에도 물성을 그대로 유지하였으나, 비조사구는 저장 중 연화되는 것으로 나타났다. 관능평가결과 조사직 후 감마선 조사구와 비조사구의 차이가 없었고, 감마선 조사구가 저장 60일째까지 관능적으로 품질이 유지되는 것으로 나타났다. 따라서 과메기에 대한 감마선 조사는 과메기의 품질을 유지시키는 효과적인 방법이라 할 수 있다.

• 한국항공운항학회지
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• 제13권1호
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• pp.43-49
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• 2005

There are several ways to mold the complex material, and it is divided to vacuum pack mold, compression mold, and hand lay up for a high molecular substance as a basic material. Moreover, it can be divided to general manufacturing (Single form) and mold manufacturing(Mold form) under normal temperature for Firefly. Firefly was manufactured with hand lay up and general manufacturing that using the foam core, glass fabric, and template without mold. However, mold manufacturing that is producing the surface by semi-sandwich using thin foam core and glass fabric then reinforce the inside with spar and rib is on developing. Mold manufacturing can make easy to production, standardize the quality, and possible to mass producing. In this paper, we present the mold producing process for canard aircraft "Firefly", and the problems and solutions during producing Firefly. Moreover, it complements the defect that the problems caused by master manufacturing error when produce several masters of a large part, and make the manufacturing process to be shortened by the replacement from the supplementary plate to the foam that is installed when producing lay up mold.

• 한국세라믹학회지
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• 제53권6호
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• pp.700-706
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• 2016

Etch rate, surface roughness and microstructure as plasma resistance were evaluated for six kinds of oxide glass with different compositions. Borosilicate glass (BS) was found to be etched at the highest etch rate and zinc aluminum phosphate glass (ZAP) showed a relatively lower etch rate than borosilicate. On the other hand, the etching rate of calcium aluminosilicate glass (CAS) was measured to be similar to that of sintered alumina while yttrium aluminosilicate glass (YAS) showed the lowest etch rate. Such different etch rates by mixture plasma as a function of glass compositions was dependent on whether or not fluoride compounds were formed on glass and sublimated in high vacuum. Especially, in view that $CaF_2$ and $YF_3$ with high sublimation points were formed on the surface of CAS and YAS glasses, both CAS and YAS glasses were considered to be a good candidate for protective coating materials on the damaged polycrystalline ceramics parts in semi-conductor and display processes.

• 대한조선학회지
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• 제13권4호
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• pp.1-10
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• 1976

It is a well-known phenomenon that, in the case of vibrations of an elastic body in a fluid such as water, the presence of the surrounding fluid has the effect of lowering the natural frequencies of the vibration as compared with those in air or vacuum on account of the increased inertia, i.e. added mass. In this report, defining the mass increase factor as the ratio of added mass to vibration mass of the body in air, the author investigated the mass increased factor of an elastic plate vibrating in the fluid. It is assumed that the edges of the plate are simply supported, and that the surrounding fluid is an infinite ideal one. For the problem formulation the elliptical cylindrical coordinate system is adopted, so that a rectangular plate may be represented by a sheet degenerated from an elliptical cylinder. By virtue of the coordinate system adopted, plates which are chordwisely finite and lengthwisely contineous could directly be treated, but plates which are chordwisely finite in both directions could not be treated directly. For the latter, hence, plates which are chordwisely finite and lengthwisely semi-finite are investigated as an appropriate approximation. Some examples of the mass increase factor are numerically calculated for the fundamental mode and modes of zero or one nodal line in each direction with the range of the aspect ratio from 1 to 10 or more.

• Composites Research
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• 제32권5호
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• pp.229-236
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• 2019

본 연구에서는 자동 섬유 적층(AFP) 장비로 제작한 열가소성 복합재에 대하여 추가 공정을 수행한 후 기계적 물성에 미치는 영향을 평가하였다. 제작을 위한 기초 연구로써 AFP의 공정 변수를 통해 열가소성 복합재를 제작하였으며 제작된 열가소성 복합재에 어닐링(Annealing) 및 진공백(Vacuum bag only) 공정을 수행하였다. 추가 공정 후 검증을 위해 결정화도 및 기공률 측정을 수행하였다. 결정화도는 시차 주사 열량 측정법(Differential scanning calorimetry)을 통해 측정하였으며 반 결정 구조인 열가소성 복합재의 공정 조건에 따른 결정화도 변화를 확인하였다. 기공률 측정을 위해 수지 용해를 수행하였으며 현미경 촬영을 통해 기공 분포를 확인하고 수지 용해법을 통해 기공률을 계산하여 공정 조건에 따른 기공률 변화를 관찰하였다. 검증 후 수행한 층간 전단 강도 시험 결과 AFP로 제작한 열가소성 복합재의 경우 결정화도 보다 기공률 값이 기계적 물성에 더 많은 영향을 미쳤다. 또한 진공백 공정을 통해 열가소성 복합재를 녹는점까지 도달시켰으며 진공상태에서 지속적으로 열가소성 복합재 내의 기공을 제거함에 따라 층간 전단 강도가 증가하는 것을 확인하였다.

• 폴리머
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• 제33권1호
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• pp.39-44
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• 2009

폴리페닐렌에테르[PPE, poly(phenylene ether)]를 기저수지로 사용하고, 가교제로 N,N'-m-phenylene-dimaleimide(PDMI), 난연제로 decabromodiphenylethane을 첨가하여 고분자 기판을 제작하였으며, 가교제와 난연제가 기판소재의 유전특성 등 물리적 특성에 미치는 영향을 고찰하였다. 개시제의 유무에 따른 PDMI의 열경화 특성을 DSC를 이용하여 분석하였으며, 이를 바탕으로 PPE-PDMI 테스트 조성을 설계하였다. 복합물 시트를 필름 코터로 성형한 후, 진공가압적층하여 테스트 기판을 제작하고, FDMI와 난연제의 함량에 따른 유전율, 유전손실, peel 강도, 납 내열성 및 난연성을 평가하였다. 유전율과 유전손실은 PDMI와 난연제의 함량에 따라 대체로 증가하는 경향을 나타내었으나, 납 내열성과 난연성은 개선된 결과를 나타내었다. Peel 강도는 PDMI가 10 wt% 이상 첨가되면 1 kN/m 이상의 높은 값을 나타내었지만, 난연제의 첨가량에 따라서는 소폭 감소하는 경향을 보였다. Gel content 측정결과로부터, PPE-PDMI의 반응 메카니즘은 semi-IPN 구조의 형성보다는 PPE와 PDMI의 crosslinking에 의한 망상구조 형성에 더 가까운 것으로 판단되었다. 최종적으로 1 GHz에서 유전율이 2.52$\sim$2.65, 유전손실이 0.002 미만으로 작은 고주파 대역용 고분자 복합체 기판소재를 얻을 수 있었다.

• 한국정보전자통신기술학회논문지
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• 제17권4호
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• pp.205-212
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• 2024

본 연구는 건조부각을 유탕기에 투입하기 전 로봇에 장착된 진공 그리퍼를 활용하여 건조 반제품(건조부각)을 이송하기 위한 선별 작업에서 그리핑 성공률을 향상시기키 위한 수단으로 건조부각의 앞면(고명이 있는)과 뒷면(고명이 없는) 표면을 판별하는 딥러닝 모델을 제안한다. 획득한 건조부각 440개의 RGB 영상을 기반으로 데이터 증강 기법을 적용한 후 건조부각 영역 및 표면 정보 라벨링을 진행하였다. 데이터 전처리 과정을 거친 건조부각 데이터를 기반으로 영역 검출을 위해 딥러닝 모델은 YOLO-v5을 적용하였다. 그 결과 건조부각 앞면 영역 검출의 mAP와 mIoU 값은 각각 0.98와 0.96으로 나타났으며, 뒷면의 경우 각각 1.00과 0.95로 나타났다. 앞면과 뒷면 2개의 클래스에 대하여 이진분류한 결과는 average 98.5%, recall 98.3%, precision 98.6%, F1-score 98.4%로 나타났다. 본 연구 결과를 통하여 RGB 영상을 활용한 건조부각의 표면 정보에 대한 분류가 가능하며, 추후 유탕 전 건조부각 표면 선별공정의 로봇-자동화 시스템 개발에 활용될 가능성을 확인하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.279.2-279.2
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• 2016

InGaN/GaN multiple quantum wells (MQWs) have been attracted much attention as light-emitting diodes (LEDs) in the visible and UV regions. Particularly, quantum efficiency of green LEDs is decreased dramatically as approaching to the green wavelength (~500 nm). This low efficiency has been explained by quantum confined Stark effect (QCSE) induced by piezoelectric field caused from a large lattice mismatch between InGaN and GaN. To improve the quantum efficiency of green LED, several ways including epitaxial lateral overgrowth that reduces differences of lattice constant between GaN and sapphire substrates, and non-polar method that uses non- or semi-polar substrates to reduce QCSE were proposed. In this study, graded short-period InGaN/GaN superlattice (GSL) was grown below the 5-period InGaN/GaN MQWs. InGaN/GaN MQWs were grown on the patterned sapphire substrates by vertical-metal-organic chemical-vapor deposition system. Five-period InGaN/GaN MQWs without GSL structure (C-LED) were also grown to compare with an InGaN/GaN GSL sample. The luminescence properties of green InGaN/GaN LEDs have been investigated by using photoluminescence (PL) and time-resolved PL (TRPL) measurements. The PL intensities of the GSL sample measured at 10 and 300 K increase about 1.2 and 2 times, respectively, compared to those of the C-LED sample. Furthermore, the PL decay of the GSL sample measured at 10 and 300 K becomes faster and slower than that of the C-LED sample, respectively. By inserting the GSL structures, the difference of lattice constant between GaN and sapphire substrates is reduced, resulting that the overlap between electron and hole wave functions is increased due to the reduced piezoelectric field and the reduction in dislocation density. As a results, the GSL sample exhibits the increased PL intensity and faster PL decay compared with those for the C-LED sample. These PL and TRPL results indicate that the green emission of InGaN/GaN LEDs can be improved by inserting the GSL structures.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.342-343
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• 2013

AlSb is a promising material for optical devices, particularly for high-frequency and nonlinear-optical applications. And AlSb offers significant potential for devices such as quantum-well lasers, laser diodes, and heterojunction bipolar transistors. In this work we study molecular beam epitaxy (MBE) growth of an unstrained AISb film on a GaAs substrate and identify the real-time monitoring capabilities of in situ spectroscopic ellipsometry (SE). The samples were fabricated on semi-insulating (0 0 1) GaAs substrates using MBE system. A rotating sample stage ensured uniform film growth. The substrate was first heated to $620^{\circ}C$ under As2 to remove surface oxides. A GaAs buffer layer approximately 200 nm- thick was then grown at $580^{\circ}C$. During the temperature changing process from $580^{\circ}C$ to $530^{\circ}C$, As2 flux is maintained with the shutter for Ga being closed and the reflection high-energy electron diffraction (RHEED) pattern remaining at ($2{\times}4$). Upon reaching the preset temperature of $530^{\circ}C$, As shutter was promptly closed with Sb shutter open, resulting in the change of RHEED pattern from ($2{\times}4$) to ($1{\times}3$). This was followed by the growth of AlSb while using a rotating-compensator SE with a charge-coupled-device (CCD) detector to obtain real-time SE spectra from 0.74 to 6.48 eV. Fig. 1 shows the real time measured SE spectra of AlSb on GaAs in growth process. In the Fig. 1 (a), a change of ellipsometric parameter ${\Delta}$ is observed. The ${\Delta}$ is the parameter which contains thickness information of the sample, and it changes in a periodic from 0 to 180o with growth. The significant change of ${\Delta}$ at~0.4 min means that the growth of AlSb on GaAs has been started. Fig. 1b shows the changes of dielectric function with time over the range 0.74~6.48 eV. These changes mean phase transition from pseudodielectric function of GaAs to AlSb at~0.44 min. Fig. 2 shows the observed RHEED patterns in the growth process. The observed RHEED pattern of GaAs is ($2{\times}4$), and the pattern changes into ($1{\times}3$) with starting the growth of AlSb. This means that the RHEED pattern is in agreement with the result of SE measurements. These data show the importance and sensitivity of SE for real-time monitoring for materials growth by MBE. We performed the real-time monitoring of AlSb growth by using SE measurements, and it is good agreement with the results of RHEED pattern. This fact proves the importance and the sensitivity of SE technique for the real-time monitoring of film growth by using ellipsometry. We believe that these results will be useful in a number of contexts including more accurate optical properties for high speed device engineering.