• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.51-51
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• 2010

Group III-nitride semiconductors have been widely studied as the materials for growth of light emitting devices. Currently, GaN devices are predominantly grown in the (0001) c-plane orientation. However, in case of using polar substrate, an important physical problem of nitride semiconductors with the wurtzite crystal structure is their spontaneous electrical polarization. An alternative method of reducing polarization effects is to grow on non-polar planes or semi-polar planes. However, non-polar and semipolar GaN grown onto r-plane and m-plane sapphire, respectively, basically have numerous defects density compared with c-plane GaN. The purpose of our work is to reduce these defects in non-polar and semi-polar GaN and to fabricate high efficiency LED on non/semi-polar substrate. Non-polar and semi-polar GaN layers were grown onto patterned sapphire substrates (PSS) and nano-porous GaN/sapphire substrates, respectively. Using PSS with the hemispherical patterns, we could achieve high luminous intensity. In case of semi-polar GaN, photo-enhanced electrochemical etching (PEC) was applied to make porous GaN substrates, and semi-polar GaN was grown onto nano-porous substrates. Our results showed the improvement of device characteristics as well as micro-structural and optical properties of non-polar and semi-polar GaN. Patterning and nano-porous etching technologies will be promising for the fabrication of high efficiency non-polar and semi-polar InGaN LED on sapphire substrate.

• Journal of Ceramic Processing Research
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• 제13권spc1호
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• pp.93-95
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• 2012

We report on the growth and characterization of the nano- and micro scale GaN structures selectively grown on the vertex of GaN stripes using the metal organic vapor phase epitaxy method and conventional photolithography technique. The triangular shaped nano- and micro GaN structures which have semi-polar {11-22} facets were formed only on the vertex of the lower GaN stripes. Crystalline defects reduction was observed by transmission electron microscopy for upper GaN stripes. We also have grown the InGaN/GaN multi-quantum well structures on the semi-polar facets of the upper GaN stripes. Cathodoluminescence images were taken at 366, 412 and 555 nm related to GaN band edge, InGaN/GaN layer and defects, respectively.

• 한국농림기상학회:학술대회논문집
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• 한국농림기상학회 2017년도 추계 학술발표초록집
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• pp.83-83
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• 2017

• Ocean and Polar Research
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• 제24권3호
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• pp.237-247
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• 2002

We report all sky camera and Fabry-Perot interferometer (FPI) observations of mesospheric gravity waves and a 12-hour wave at Resolute $(75^{\circ}N)$ and a joint observation of 10-hour wave with Eureka $(80^{\circ}N)$. All sky camera observations showed a low occurrence of mesosphere gravity waves during equinoxes, which is similar to the mid-latitude region. A slightly higher occurrence near solstice appears to indicate that gravity waves are not filtered out by the neutral wind in the winter. The FPI observation of a 12-hour wave showed amplitude variations from day to day. The phase of the wave is mostly stable and consistent with the GSWM prediction in the winter. The phase shifts with season as predicted by the GSWM. Four events of the 12-hour wave were found in spring with amplitudes larger than the GSW predictions. The FPls at Resolute and Eureka also observed a wave with period close to 10 hours. The 10-hour wave maybe the result of the non-linear interaction between the semi-diurnal tide and the quasi-two day wave. Further studies are under way. Overall, the combined Resolute and Eureka observation have revealed some new fractures about the mesospheric gravity wave, tidal wave, and other oscillations.

• 전기전자학회논문지
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• 제23권4호
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• pp.1288-1294
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• 2019

Polar code의 채널용량 달성 특성은 polar code를 각광 받는 오류 정정 부호로 만들었다. 하지만 충분한 오류 정정 성능은 부호의 길이가 길어졌을 때 달성되는 점근적 속성을 보인다. 따라서 입력 데이터가 길어지는 경우에 대한 초대규모 집적회로 구현을 실현하기 위하여 효율적인 구조가 필요하게 되었다. 기존의 polar code 부호기 구조 중 가장 기본적인 완전 병렬 구조는 직관적이고 구현이 쉽지만 긴 polar code에 높은 하드웨어 복잡성을 보이므로 부적합하다. 그리고 이를 보완하여 제안된 부분 병렬 구조는 하드웨어 면적 측면에서 큰 성과를 얻었으나 그 방식이 일반화되어 있지 않아 설계자에 따라 구조에 변동이 발생할 수 있다. 본 논문에서는 이를 개선하고자 비트 차원의 치환을 위해 제안된 회로 설계법을 polar code에 적용하는 하드웨어 설계법을 제안한다. 제안하는 방법을 polar code의 부호기에 적용함으로써 완전 병렬 부호기만큼 직관적인 구조를 가짐과 동시에 일반화된 polar code 부분 병렬 부호기를 설계할 수 있다.

• 대한수학회논문집
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• 제12권3호
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• pp.597-602
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• 1997

Let H be a separable complex Hilbert space and L(H) be the *-algebra of all bounded linear operators on H. For $T \in L(H)$, we construct a pair of semi-positive definite operators $$ $\mid$T$\mid$_r = (T^*T)^{\frac{1}{2}} and $\mid$T$\mid$_l = (TT^*)^{\frac{1}{2}}. $$ An operator T is called a semi-hyponormal operator if $$ Q_T = $\mid$T$\mid$_r - $\mid$T$\mid$_l \geq 0. $$ In this paper, by using a technique introduced by Berberian [1], we show that the approximate point spectrum $\sigma_{ap}(T)$ of a semi-hyponomal operator T is empty.

• 한국결정성장학회지
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• 제21권3호
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• pp.114-118
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• 2011

본 논문에서는 육각형 GaN 피라미드의 꼭지점 부분에만 나노 혹은 마이크로 크기의 GaN 구조를 선택적으로 성장시킬 수 있는 결정 성장 방볍에 대하여 연구하였다. 최적화된 포토리소그라피 공정을 이용하여 육각형 GaN 피라미드 구조의 꼭지점 부분의 $SiO_2$ 마스크 영역만을 제거할 수 있었으며, 이렇게 하여 노출된 육각형 GaN 피라미드의 꼭지점 부분에만 metal organic vapor phase epitaxy(MOVPE) 결정 성장방법을 사용하여 나노 및 마이크로 크기의 GaN 구조를 선택적으로 성장하였다. GaN 피라미드 꼭지점 부근에 형성된 나노 및 마이크로 G값J 구조는 semi-polar {1-101} 결정면으로 둘러싸인 육각 피라미드 형상을 하고 있으며 그들의 크기는 성장 시간에 의해 쉽게 조절할 수 있음을 확인하였다. TEM 관측 결과, 측면 방향으로 진행하는 관통전위들이 $SiO_2$ 마스크에 의해 효율적으로 차단되어 나노 및 마이크로 GaN 구조에서는 전위 밀도가 감소하는 것을 확인할 수 있었으나 $SiO_2$ 마스크의 끝부분의 매끄럽지 못한 부분에 의해 적층 결함이 발생함을 확인하였다.

• 한국우주과학회:학술대회논문집(한국우주과학회보)
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• 한국우주과학회 2011년도 한국우주과학회보 제20권1호
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• pp.22.1-22.1
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• 2011

Two dominant components of polar motion are the Chandler and the annual components. Recently, the existence of 500-day period component in the Earth's polar motion has been manifested. But its existence is not clear on Fourier spectrum. One cause of difficulty involved here is that the amplitudes of the two main components are slightly variable in time by certain amounts (Chandler: 0.15~0.28 arcsec, annual: 0.09~0.15 arcsec). A residual polar motion time series excluding the two main components for a time span between 1962 Jan and 2010 Nov from IERS C04 time series dataset was constructed by least square fitting. For faithful fitting, 43 time segments of 6.8 year length (each starts on January 1st of successive years) were separately acquired and later combined together. The period of dominant peak in the spectrum of this residual polar motion time series is 490 days. Next peaks have their periods as semi-annual, 300~330 days, ~560 days, 670 days, and 1360 days.

• 한국가시화정보학회:학술대회논문집
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• 한국가시화정보학회 2004년도 Proceedings of 2004 Korea-Japan Joint Seminar on Particle Image Velocimetry
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• pp.81-90
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• 2004

A zonal embedded grid technique has been developed for computation of the two-dimensional Navier-Stokes equations with cylindrical coordinates. The fundamental idea of the zonal embedded grid technique is that the number of azimuthal grids can be made small near the origin of the coordinates so that the grid size is more uniformly distributed over the domain than with the conventional regular-grid system. The code developed using this technique combined with the explicit, finite-volume method was then applied to calculation of the spin-up flows within a semi-circular cylinder. It was shown that the numerical results were in good agreement with the experimental results both qualitatively and quantitatively.

• Transactions on Electrical and Electronic Materials
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• 제7권1호
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• pp.16-20
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• 2006

In this paper, we investigated the effects of short-term oxygen plasma treatment of semiconducting silicone layer to improve interfacial performances in joints prepared with a insulating silicone materials. Surface characterizations were assessed using contact angle measurement and x-ray photoelectron spectroscopy (XPS), and then adhesion level and electrical performance were evaluated through T-peel tests and electrical breakdown voltage tests of treated semi-conductive and insulating joints. Plasma exposure mainly increased the polar component of surface energy from $0.21\;dyne/cm^2$ to $47\;dyne/cm^2$ with increasing plasma treatment time and then leveled off. Based on XPS analysis, the surface modification can be mainly ascribed to the creation of chemically active functional groups such as C-O, C=O and COH on semi-conductive silicone surface. This oxidized rubber layer is inorganic silica-like structure of Si bound with three to four oxygen atoms ($SiO_x,\;x=3{\sim}4$). The oxygen plasma treatment produces an increase in joint strength that is maximum for 10 min treatment. However, due to brittle property of this oxidized layer, the highly oxidized layer from too much extended treatment could be act as a weak point, decreasing the adhesion strength. In addition, electrical breakdown level of joints with adequate plasma treatment was increased by about $10\;\%$ with model samples of joints prepared with a semi-conducting/ insulating silicone polymer after applied to interface.