• Journal of the Korean Recycled Construction Resources Institute
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• v.8 no.1
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• pp.129-133
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• 2020

The concentration of remaining formaldehyde contained in waste liquid emitted from the process of urea-formaldehyde microcapsule synthesis was analyzed by gas chromatography-mass spectrometry (GC-MS). Three factors that can affect on the reaction of formaldehyde were selected including pH, ammonium chloride input and temperature. The effect of these factors on the concentration of remaining formaldehyde was studied. When ammonium chloride input was 0.025g, microcapsules could not be obtained or core substance leaked out because of weak shell, and therefore this reaction condition would be inadequate. It was confirmed that the concentration of remaining formaldehyde could be minimized when the microencapsulation was conducted at 70℃ and pH 2.5 by using a ammonium chloride input of 0.050g. This study can make contribution to UF microencapsulation in safer working environment.

• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.42 no.1
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• pp.64-73
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• 2010

This study was conducted to modify the surface properties of papers by formation of hydrophobic self-assembled monolayer(SAM) on paper surface with silanes. A base paper I(0.5% AKD) and base paper II(1.0-1.5% AKD) were reacted with silanes(PFDTES, DMDCS, MODDCS) by immersion method and vapor deposition method. Hydrophobic SAMs(contact angle value>$120^{\circ}C$) were obtained on all papers after treatment with $10^{\mu}l$ PFDTES for 15min, with $50^{\mu}l$ DMDCS for 30min, with $50^{\mu}l$ MODDCS for 300min. When applying PFDTES to paper surface, lower silane concentration and shorter reaction time were required, whereas MODDCS with long alkyl chain required the longest reaction time of 300min. The st$\ddot{o}$ckight sizing degree of silane treated papers were increased between 105sec(base paper I) and 130sec(base paper II). The wet tensile strength of PFDTES-treated base papers(I, II) increased by 10-34% after SAM formation. However, the wet tensile strength of the DMDCS-treated base paper(I) was found to decrease from 0.067kN/m to 0.038kN/m; this may due to the cellulose degrading as a result of generated hydrogen chloride when hydroxyl group of cellulose were reacted with DMDCS. No apparent changes of PPS roughness on silane-treated papers are observed. The ATR-IR spectrum showed absorption peak located at 465 and 1200cm-1 which can be assigned to the Si-O-C asymmetric stretching and Si-O-C bonds, respectively.

• Clinical and Experimental Pediatrics
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• v.55 no.2
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• pp.42-47
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• 2012

$Mycoplasma$ $pneumoniae$ (MP), the smallest self-replicating biological system, is a common cause of upper and lower respiratory tract infections, leading to a wide range of pulmonary and extra-pulmonary manifestations. MP pneumonia has been reported in 10 to 40% of cases of community-acquired pneumonia and shows an even higher proportion during epidemics. MP infection is endemic in larger communities of the world with cyclic epidemics every 3 to 7 years. In Korea, 3 to 4-year cycles have been observed from the mid-1980s to present. Although a variety of serologic assays and polymerase chain reaction (PCR) techniques are available for the diagnosis of MP infections, early diagnosis of MP pneumonia is limited by the lack of immunoglobulin (Ig) M antibodies and variable PCR results in the early stages of the infection. Thus, short-term paired IgM serologic tests may be mandatory for an early and definitive diagnosis. MP infection is usually a mild and self-limiting disease without specific treatment, and if needed, macrolides are generally used as a first-choice drug for children. Recently, macrolide-resistant MP strains have been reported worldwide. However, there are few reports of apparent treatment failure, such as progression of pneumonia to acute respiratory distress syndrome despite macrolide treatment. The immunopathogenesis of MP pneumonia is believed to be a hyperimmune reaction of the host to the insults from MP infection, including cytokine overproduction and immune cell activation (T cells). In this context, immunomodulatory treatment (corticosteroids or/and intravenous Ig), in addition to antibiotic treatment, might be considered for patients with severe infection.

• Korean Journal of Materials Research
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• v.23 no.8
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• pp.405-422
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• 2013

Atomic layer deposition(ALD) is a promising deposition method and has been studied and used in many different areas, such as displays, semiconductors, batteries, and solar cells. This method, which is based on a self-limiting growth mechanism, facilitates precise control of film thickness at an atomic level and enables deposition on large and three dimensionally complex surfaces. For instance, ALD technology is very useful for 3D and high aspect ratio structures such as dynamic random access memory(DRAM) and other non-volatile memories(NVMs). In addition, a variety of materials can be deposited using ALD, oxides, nitrides, sulfides, metals, and so on. In conventional ALD, the source and reactant are pulsed into the reaction chamber alternately, one at a time, separated by purging or evacuation periods. Thermal ALD and metal organic ALD are also used, but these have their own advantages and disadvantages. Furthermore, plasma-enhanced ALD has come into the spotlight because it has more freedom in processing conditions; it uses highly reactive radicals and ions and for a wider range of material properties than the conventional thermal ALD, which uses $H_2O$ and $O_3$ as an oxygen reactant. However, the throughput is still a challenge for a current time divided ALD system. Therefore, a new concept of ALD, fast ALD or spatial ALD, which separate half-reactions spatially, has been extensively under development. In this paper, we reviewed these various kinds of ALD equipment, possible materials using ALD, and recent ALD research applications mainly focused on materials required in microelectronics.

• Composites Research
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• v.16 no.3
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• pp.68-74
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• 2003

In this paper, intermetallic/metal laminated composites have been successfully produced that utilizes SHS reactions between Ni and Al elemental metal foils. The reaction between Ni and Al started from the nucleation and growth of NiA1$_3$ and was followed by the diffusional growth of Ni$_2$A1$_3$ between Ni and NiA1$_3$. The SHS reaction was thermodynamically analyzed through the final volume fraction of the non-reacted Al related with the initial thickness ratio of Ni:Al and prior heat treatment. Thermally aging these 1aminates resulted in formation of a functionally gradient series of intermetallic phases. Microstructure showed that the intermetallic volume percent was 82, 59.5, 40% in the 1:1, 2:1, 4:1 thickness ratio specimen. Main phases of the intermetallic were NiAl and Ni$_3$Al having higher strength at room and high temperatures.

• Applied Chemistry for Engineering
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• v.25 no.2
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• pp.215-221
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• 2014

A simple heterogeneous system has been developed by using base treated manganese dioxide (B-$MnO_2$) for the aerobic oxidation of amines under mild reaction conditions of 1 atm of air and $50^{\circ}C$ in hexane. This system was highly efficient to oxidize various kinds of primary or secondary amines including aliphatic, aromatic, and hetero-atomic ones under the applied reaction conditions. Amines were oxidized to nitriles or diimines by the self-condensation or oxidative dehydrogenation through imine intermediate. The B-$MnO_2$ was reused for at least 5 times without any loss of its catalytic performance and showed its cost effectiveness, easy workup, and easy separation of the products for achieving the protocol of green chemistry.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.75-75
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• 2011

Recently, dye-sensitized solar cell (DSSC) attracts great attention as a promising alternative to conventional silicon solar cells. One of the key components for the DSSC would be the nanocrystalline TiO2 electrode, and the control of interface between TiO2 and TCO is a highly important issue in improving the photovoltaic conversion efficiency. In this work, we applied various interfacial layers, and analyzed their effect in enhancing photovoltaic properties. In overall, introduction of interfacial layers increased both the Voc and Jsc, since the back-reaction of electrons from TCO to electrolyte could be blocked. First, several metal oxides with different band gaps and positions were employed as interfacial layer. SnO2, TiO2, and ZrO2 nanoparticles in the size of 3-5 nm have been synthesized. Among them, the interfacial layer of SnO2, which has lower flat-band potential than that of TiO2, exhibited the best performance in increasing the photovoltaic efficiency of DSSC. Second, long-range ordered cubic mesoporous TiO2 films, prepared by using triblock copolymer-templated sol-gel method via evaporation-induced self-assembly (EISA) process, were utilized as an interfacial layer. Mesoporous TiO2 films seem to be one of the best interfacial layers, due to their additional effect, improving the adhesion to TCO and showing an anti-reflective effect. Third, we handled the issues related to the optimum thickness of interfacial layers. It was also found that in fabricating DSSC at low temperature, the role of interfacial layer turned out to be a lot more important. The self-assembled interfacial layer fabricated at room temperature leads to the efficient transport of photo-injected electrons from TiO2 to TCO, as well as blocking the back-reaction from TCO to I3-. As a result, fill factor (FF) was remarkably increased, as well as increase in Voc and Jsc.

• Polymer(Korea)
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• v.27 no.6
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• pp.555-561
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• 2003

The self-assembled monolayer coating of octadecyltrichlorosilane (OTS) on the silicon based MEMS was investigated and surface characteristics were considered as a function of coating conditions and reagent composition. The sulfuric peroxide mixture (SPM) solution was used to form -OH group which caused the hydrophilic characteristic on silicon surftce. Highest hydrophilicity was obtained by SPM solution with 85% acid content at room temperature. OTS was applied on the silicon surface by means of self-assembled monolayers (SAMs) coating. It was found that sol-gel reaction was took place between -OH group on the silicon surface and -Cl group in OTS. As a result, the contact angle increased due to the increase of hydrophobicity by Si-O bonding of SAMs. Sol-gel reaction could be controlled by coating conditions as well as reagent composition in OTS coating solution.

• Korean Chemical Engineering Research
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• v.45 no.6
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• pp.611-618
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• 2007

We demonstrate the sol-gel coating technique of colloidal clusters for producing hollow micro-particles with complex morphologies. Cross-linked amidine polystyrene (PS) microspheres were synthesized by emulsifier-free emulsion copolymerization of styrene and divinylbenzene. The amidine PS particles were self-organized inside toluene-in-water emulsion droplets to produce large quantities of colloidally stable clusters. These clusters were coated with thin silica shell by sol-gel reaction of tetraethylorthosilicate (TEOS) and ammonia, and the organic polystyrene cores were removed by calcination at high temperature to generate nonspherical hollow micro-particles with complex morphologies. This process can be used to prepare hollow particles with shapes such as doublets, tetrahedra, icosahedra, and others.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.22.2-22.2
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• 2009

Currently, metal silicides become increasingly more essential part as a contact material in complimentary metal-oxide-semiconductor (CMOS). Among various silicides, NiSi has several advantages such as low resistivity against narrow line width and low Si consumption. Generally, metal silicides are formed through physical vapor deposition (PVD) of metal film, followed by annealing. Nanoscale devices require formation of contact in the inside of deep contact holes, especially for memory device. However, PVD may suffer from poor conformality in deep contact holes. Therefore, Atomic layer deposition (ALD) can be a promising method since it can produce thin films with excellent conformality and atomic scale thickness controllability through the self-saturated surface reaction. In this study, Ni thin films were deposited by thermal ALD using bis(dimethylamino-2-methyl-2-butoxo)nickel [Ni(dmamb)2] as a precursor and NH3 gas as a reactant. The Ni ALD produced pure metallic Ni films with low resistivity of 25 $\mu{\Omega}cm$. In addition, it showed the excellent conformality in nanoscale contact holes as well as on Si nanowires. Meanwhile, the Ni ALD was applied to area-selective ALD using octadecyltrichlorosilane (OTS) self-assembled monolayer as a blocking layer. Due to the differences of the nucleation on OTS modified surfaces toward ALD reaction, ALD Ni films were selectively deposited on un-coated OTS region, producing 3 ${\mu}m$-width Ni line patterns without expensive patterning process.