• JSTS:Journal of Semiconductor Technology and Science
• /
• v.13 no.1
• /
• pp.1-7
• /
• 2013

In this paper, a biosensor based on a gated lateral bipolar junction transistor (BJT) is proposed. The gated lateral BJT can function as both a metal-oxide-semiconductor field-effect transistor (MOSFET) and a BJT. By using the self-assembled monolayer (SAM) method, the C-reactive protein antibodies were immobilized on the floating gate of the device as the sensing membrane. Through the experiments, the characteristics of the biosensor were analyzed in this study. According to the results, it is indicated that the gated lateral BJT device can be successfully applied as a biosensor. Additionally, we found that the sensitivity of the gated lateral BJT can be varied by adjusting the emitter (source) bias.

• Proceedings of the KIEE Conference
• /
• 1995.07c
• /
• pp.1085-1087
• /
• 1995

A large leakage current may be one of the critical issues for poly-silicon thin film transistors(poly-Si TFTs) for LCD applications. In order to reduce the leakage current of poly-Si TFTs, several offset gated structures have been reported. However, those devices, where the offset length in the source region is not same as that in the drain region, exhibit the asymmetric electrical performances such as the threshold voltage shift and the variation of the subthreshold slope. The different offset length is caused by the additional mask step for the conventional offset structures. Also the self-aligned implantation may not be applicable due to the mis-alignment problem. In this paper, we propose a new fabrication method for poly-Si TFTs with a self-aligned offset gated structure by employing a photo resistor reflow process. Compared with the conventional poly-Si TFTs, the device is consist of two gate electrodes, of which one is the entitled main gate where the gate bias is employed and the other is the entitled subgate which is separate from both sides of the main gate. The poly-Si channel layer below the offset oxide is protected from the injected ion impurities for the source/drain implantation and acts as an offset region of the proposed device. The key feature of our new device is the offset lesion due to the offset oxide. Our experimental results show that the offset region, due to the photo resistor reflow process, has been successfully obtained in order to fabricate the offset gated poly-Si TFTs. The advantages of the proposed device are that the offset length in the source region is the same as that in the drain region because of the self-aligned implantation and the proposed device does not require any additional mask process step.

• Journal of the Korean Regional Science Association
• /
• v.36 no.1
• /
• pp.3-16
• /
• 2020

Most of the Korean apartment complexes are considered as gated communities having characteristics such as self-sufficiency in service provision, self-governance and exclusiveness. Today the exclusionary features of apartment complexes are reinforced by a new practice of erecting gates against pedestrians in addition to the existing walls without considering implication of the practice over neighborhoods. Three groups of residents, those who live in low-rise residential areas without walls, apartment complexes with walls and apartment complexes with walls and gates were surveyed to measure the impact of the new exclusionary practice of gated communities on social sustainability of neighborhoods. Gates turn out to improve social sustainability indicators related to life quality but lower social cohesion of neighborhoods by lowering inclusiveness indicator considerably. The new apartment complexes with increased exclusiveness shake the established order of co-existence between low-rise residential areas and apartment complexes and strengthen spatial and social segregation within neighborhoods.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.32A no.5
• /
• pp.54-59
• /
• 1995

We have proposed a novel self-aligned offset gated polysilicon TFTs device without an offset mask in order to reduce a leakage current and suppress a kink effect. The photolithographic process steps of the new TFTs device are identical to those of conventional non-offset structure TFTs and an additional mask to fabricate an offset structure is not required in our device due to the self-aligned process. The new device has demonstrated a lower leakage current and a better ON/OFF current ratio compared with the conventional non-offset device. The new TFT device also exhibits a considerable reduction of the kink effect because a very thin film TFT devices may be easily fabricated due to the elimination of contact over-etch problem.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.276-276
• /
• 2014

High-performance, fully-transparent, and top-gated oxide thin-film transistor (TFT) was successfully fabricated with Ta2O5 high-k gate dielectric on a glass substrate. Through a self-passivation with the gate dielectric and top electrode, the top-gated oxide TFT was not affected from H2O and O2 causing the electrical instability. Heat-treated InSnO (ITO) was used as the top and source/drain electrode with a low resistance and a transparent property in visible region. A InGaZnO (IGZO) thin-film was used as a active channel with a broad optical bandgap of 3.72 eV and transparent property. In addition, using a X-ray diffraction, amorphous phase of IGZO thin-film was observed until it was heat-treated at 500 oC. The fabricated device was demonstrated that an applied electric field efficiently controlled electron transfer in the IGZO active channel using the Ta2O5 gate dielectric. With the transparent ITO electrodes and IGZO active channel, the fabricated oxide TFT on a glass substrate showed optical transparency and high carrier mobility. These results expected that the top-gated oxide TFT with the high-k gate dielectric accelerates the realization of presence of fully-transparent electronics.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.33A no.7
• /
• pp.127-133
• /
• 1996

In this paper, we propose a new fabrication method for poly-Si TFTs with a self-aligned offset gated structure by employing a photoresist reflow process. Compared with the conventional poly-Si TFTs, the device is consist of two gate electrodes, of which one is the entitled main gate where the gate bias is employed and the other is the entitled subgate which is separate form both sides of the main gate. The poly-Si channel layer below the offset oxide is protected form the injected ion impurities for the source/drain implantation and acts as an offset region of the proposed device. The key feature of oru new device is the offset region due to the offset oxide. our experimental reuslts show that the offset region, due to the photoresist reflow process, has been sucessfully obtained in order to fabricate the offset gated poly-Si TFTs. The maximum ON/OFF ratio occurs at the L$_{off}$ of 1.1${\mu}$m and exceeds 1X10$^{6}$.

• The Journal of the Acoustical Society of Korea
• /
• v.39 no.5
• /
• pp.483-489
• /
• 2020

This paper proposes acoustic model training using self-attention for low-resource speech recognition. In low-resource speech recognition, it is difficult for acoustic model to distinguish certain phones. For example, plosive /d/ and /t/, plosive /g/ and /k/ and affricate /z/ and /ch/. In acoustic model training, the self-attention generates attention weights from the deep neural network model. In this study, these weights handle the similar pronunciation error for low-resource speech recognition. When the proposed method was applied to Time Delay Neural Network-Output gate Projected Gated Recurrent Unit (TNDD-OPGRU)-based acoustic model, the proposed model showed a 5.98 % word error rate. It shows absolute improvement of 0.74 % compared with TDNN-OPGRU model.

• The Journal of the Acoustical Society of Korea
• /
• v.39 no.5
• /
• pp.406-413
• /
• 2020

In this paper, to improve the classification accuracy of bird and amphibian acoustic sound, we utilize GLU (Gated Linear Unit) and Self-attention that encourages the network to extract important features from data and discriminate relevant important frames from all the input sequences for further performance improvement. To utilize acoustic data, we convert 1-D acoustic data to a log-Mel spectrogram. Subsequently, undesirable component such as background noise in the log-Mel spectrogram is reduced by GLU. Then, we employ the proposed temporal self-attention to improve classification accuracy. The data consist of 6-species of birds, 8-species of amphibians including endangered species in the natural environment. As a result, our proposed method is shown to achieve an accuracy of 91 % with bird data and 93 % with amphibian data. Overall, an improvement of about 6 % ~ 7 % accuracy in performance is achieved compared to the existing algorithms.

• Proceedings of the KIEE Conference
• /
• 2011.07a
• /
• pp.2039-2040
• /
• 2011

자기공명영상에서 심장의 기능을 진단에 필요한 심장 영상을 얻기 위해서는 심장의 움직임을 모니터 할 수 있는 ECG나 pulse oximeter 등의 장비로 동기를 맞추어 주기위한 트리거 신호가 필요하다. 본 논문은 심장의 움직임을 다른 장비의 도움 없이 동기화하여 자기공명 심장 영상을 재구성하는 새로운 방법을 나선주사영상기법에 적용하여 제안하였다.

• ETRI Journal
• /
• v.41 no.3
• /
• pp.371-382
• /
• 2019

Machine reading comprehension is the task of understanding a given context and finding the correct response in that context. A simple recurrent unit (SRU) is a model that solves the vanishing gradient problem in a recurrent neural network (RNN) using a neural gate, such as a gated recurrent unit (GRU) and long short-term memory (LSTM); moreover, it removes the previous hidden state from the input gate to improve the speed compared to GRU and LSTM. A self-matching network, used in R-Net, can have a similar effect to coreference resolution because the self-matching network can obtain context information of a similar meaning by calculating the attention weight for its own RNN sequence. In this paper, we construct a dataset for Korean machine reading comprehension and propose an $S^2-Net$ model that adds a self-matching layer to an encoder RNN using multilayer SRU. The experimental results show that the proposed $S^2-Net$ model has performance of single 68.82% EM and 81.25% F1, and ensemble 70.81% EM, 82.48% F1 in the Korean machine reading comprehension test dataset, and has single 71.30% EM and 80.37% F1 and ensemble 73.29% EM and 81.54% F1 performance in the SQuAD dev dataset.