• 대한전자공학회논문지
• /
• 제25권2호
• /
• pp.188-195
• /
• 1988

The electronic states in implanted n-type silicon inversion layers have been calculated by solving Schrodinger and Poisson's equations self-consistently. The results show that implantation affects seriously energy levels, populations, and electron distribution of n-type silicon inversion layers. The calcualted channel charge is in excellent agreement with the experimental data reported elsewhere. This analysis is expected to provide powerful means to evaluate the performance of implanted n-channel MOSTs.

• 대한기계학회논문집B
• /
• 제37권10호
• /
• pp.887-894
• /
• 2013

복합재의 물성치 해석에 일반적으로 사용되는 일반화된 자기일치모델(Generalized Self-Consistent Model)과 수정된 에쉘비모델(Modified Eshelby Model)을 이용하여 나노유체의 열전도계수를 예측할 수 있음을 보였다. 이 유체의 열전달효과를 대폭 향상시키는 대표적인 메카니즘 중 하나인 나노입자와 기본유체 사이에 존재하는 나노층의 영향을 고려하여 나노유체의 열전도계수를 예측하였다. 본 연구는 나노층의 열전도계수가 일정한 값을 가질 때 기존 대표적인 모델과 동일한 결과를 보였으며, 선형적으로 변할 때 역시 문헌에 있는 모델과 동등한 수준의 예측 값을 보였다. 알루미나와 산화구리를 나노입자로 물과 에틸렌글리콜을 기본유체로 한 나노유체의 열전도계수에 대한 실험결과와 본 모델의 예측결과를 비교함으로써 본 모델의 타당성을 입증하였다.

• Journal of the Optical Society of Korea
• /
• 제16권3호
• /
• pp.292-298
• /
• 2012

The epitaxial layer structures for blue InGaN light emitting diodes have been optimized for high brightness applications with the output power levels exceeding 1000 $W/cm^2$ by using a self-consistent finite element method. The light-current-voltage relationship has been directly estimated from the multiband Hamiltonian for wurtzite crystals. To analyze the efficiency droop at high injection levels, the major nonradiative recombination processes and carrier spillover have also been taken into account. The wall-plug efficiency at high injection levels up to several thousand $A/cm^2$ has been successfully evaluated for various epilayer structures facilitating optimization of the epitaxial structures for desired output power levels.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
• /
• pp.775-778
• /
• 2003

In this paper, we report our quantum mechanical approach for the analysis of FinFET in a self-consistent manner. The simulation results are carefully investigated for FinFET with an electrical channel length(Leff) of 30nm and with a fin thickness(Tsi) of 10～35nm. We also demonstrated the differences in the simulations for the classical and quantum-mechanical simulation approaches, respectively. These simulation results also imply that it is necessary to solve the coupled Poisson and Schrodinger equations in a self-consistent manner for analyzing the sub-30nm MOSFETS including FinFET.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1993년도 하계학술대회 논문집 B
• /
• pp.1280-1282
• /
• 1993

We investigated theoretically the current-voltage characteristics of resonant tunneling diodes with a single quantum well structure, using a self-consistent method. This method is a numerical analysis which is able to include the effects of the undoped spacer layer and the band bending by charge accumulation and depletion on the contact layers, so that it is better suited to explain experimental results. The structure used is an $Al_{0.5}Ga_{0.5}$As/GaAs/$Al_{0.5}Ga_{0.5}As$ single quantum well. In this work, we estimate the theoretical current-voltage characteristics, and then, the dependence of the current-voltage curves on the thickness of undoped spacer layers.

• 한국공간구조학회:학술대회논문집
• /
• 한국공간구조학회 2008년도 춘계 학술발표회 논문집
• /
• pp.89-94
• /
• 2008

This paper deals with the method of self-equilibrium stress mode analysis of cable dome structures. From the point of view of analysis, cable dome structure is a kind of unstable truss structure which is stabilized by means of introduction of prestressing. The prestress must be introduced according to a specific proportion among different structural member and it is determined by an analysis called self-equilibrium stress mode analysis. The mathematical equation involved in the self-equilibrium stress mode analysis is a system of linear equations which can be solved numerically by adopting the concept of Moore-Penrose generalized inverse. The calculation of the generalized inverse is carried out by rank factorization method. This method involves a parameter called epsilon which plays a critical role in self-equilibrium stress mode analysis. It is thus of interest to investigate the range of epsilon which produces consistent solution during the analysis of self-equilibrium stress mode.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2009년도 제38회 동계학술대회 초록집
• /
• pp.314-314
• /
• 2010

The design of the blanket and shield play a key role in determining the size of a reactor since it has an impact on the various reactor components. The blanket should produce enough tritium for tritium self-sufficiency and the shield should provide sufficient protection for the superconducting TF coil. Neutronic optimization of the blanket and the shield is necessary, and we coupled the system analysis with a neutronic calculation to account for the interrelation of the blanket and shield with the plasma performance of a reactor system in a self-consistent manner. By using the coupled system analysis code, the operational space for a low aspect ratio (LAR) tokamak reactor with a superconducting toroidal field (TF) coil is investigated with an spect ratio in the range of 1.5 - 2.5. The minimum major radius which satisfies all the physics and engineering requirements increases with the magnetic field at the magnetic axis. A required inboard shield thickness is mainly determined by the requirement on the protection of the TF coil against radiation damage. It is shown that to have a fusion power bigger than 3,000 MW in the LAR tokamak with a superconducting TF coil, a major radius bigger than 4.0 m is required.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제51권9호
• /
• pp.397-407
• /
• 2002

A new simulator which predicts the quantum effect in NMOSFET structure is developed. Using the self-consistent method by numerical method, this simulator accurately predicts the carrier distribution due to improved calculation precision of potential in the inversion layer. However, previous simulator uses analytical potential distribution or analytic function based fitting parameter Using the developed simulator, threshold voltage increment and gate capacitance reduction due to the quantum effect are analyzed in NMOS. Especially, as oxide thickness and channel doping dependence of quantum effect is analyzed, and the property analysis for the next generation device is carried out.

• 한국조사연구학회지:조사연구
• /
• 제11권2호
• /
• pp.123-140
• /
• 2010

The purpose of this study is to determine the unidimensionality of Grasmick's operationalization of Gottfredson and Hirschi's criminality inducing the concept of low self-control. By applying confirmatory factor analysis procedures that incorporate advances in the application, the proposed six factor model and two alternative models were examined suggesting that Grasmick's low self-control scale actually contains 6 distinguishable factors, not a single factor. The factors identified to be consistent with the six-factor model were impulsivity, simple tasks, risk seeking, physical activities, self-centered, and temper.

• 디지털융복합연구
• /
• 제11권10호
• /
• pp.313-320
• /
• 2013

본 연구에서 관광목적지의 브랜드자산과 자아일치성간에 유의한 관계와 브랜드자산이 애착과 행동의도에 영향관계를 파악하고자 했다. 첫째, 관광목적지의 브랜드자산은 관광객 자아일치성에 유의한 영향을 미칠 것이다. 의가설을 검증하기 위하여 다중회귀분석을 실시하였으며 브랜드자산은 자아일치성에 이미지와 충성도만이 유의한 관계를 나타내고 있었다. 둘째, 관광목적지의 자아일치성은 관광객 애착에 유의한 영향을 미칠 것이다. 가설을 검증하기 위하여 다중회귀분석을 실시하였으며 자아일치성은 애착에 대하여 유의한 관계를 나타내고 있었다. 셋째, 관광목적지의 애착은 관광객 행동의도에 유의한 영향을 미칠 것이다. 가설을 검증하기 위하여 다중회귀분석을 실시하였으며 애착은 행동의도에 대하여 유의한 관계를 나타내고 있었다.