• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2009.05a
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• pp.678-681
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• 2009

A single-pixel photon counter is designed using a folded cascode CMOS operational amplifier which is self-biased. Since there is no need for a voltage bias circuit, the layout area and power consumption of the designed counter are reduced. The signal voltage of the designed charge sensitive amplifier (CSA) with the MagnaChip $0.18{\mu}m$ CMOS process is simulated to be 138mv, near the theoretical voltage of 151mV. And the layout area of the designed counter is $100{\mu}m{\times}100{\mu}m$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.7
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• pp.1235-1242
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• 2008

In this paper, x-ray image sensor of photon counting type having a $32{\times}32$ pixel array is designed with $0.18{\mu}m$ triple-well CMOS process. Each pixel of the designed image sensor has an area of loot $100{\times}100\;{\mu}m2$ and is composed of about 400 transistors. It has an open pad of an area of $50{\times}50{\mu}m2$ of CSA(charge Sensitive Amplifier) with x-ray detector through a bump bonding. To reduce layout size, self-biased folded cascode CMOS OP amp is used instead of folded cascode OP amp with voltage bias circuit at each single-pixel CSA, and 15-bit LFSR(Linear Feedback Shift Register) counter clock generator is proposed to remove short pulse which occurs from the clock before and after it enters the counting mode. And it is designed that sensor data can be read out of the sensor column by column using a column address decoder to reduce the maximum current of the CMOS x-ray image sensor in the readout mode.

• Journal of the Institute of Convergence Signal Processing
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• v.7 no.2
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• pp.81-86
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• 2006

In this paper, a new process detection circuit is proposed. The proposed process detection circuit compares a long channel MOS transistor (L > 0.4um) to a short channel MOS transistor which uses lowest feature size of the process. The circuit generates the differential current proportional to the deviation of carrier mobilities according to the process variation. This method keep the two transistor's drain voltage same by implementing the feedback using a high gain OPAMP. This paper also shows the new design of the simple high gam self-biased rail-to-rail OPAMP using a proposed self-biased super MOS composite circuit. The gain of designed OPAMP is measured over 100dB with $0.2{\sim}1.6V$ wide range CMR in single stage. Finally, the proposed process detection circuit is applied to a differential VCO and the VCO showed that the proposed process detection circuit compensates the process corners successfully and ensures the wide rage operation.