• Title/Summary/Keyword: Self-assembled Monolayer

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Applications of Self-assembled Monolayer Technologies in MEMS Fabrication (MEMS 공정에서의 자기 조립 단분자층 기술 응용)

  • Woo-Jin Lee;Seung-Min Lee;Seung-Kyun Kang
    • Journal of the Microelectronics and Packaging Society
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    • v.30 no.2
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    • pp.13-20
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    • 2023
  • The process of microelectromechanical system (MEMS) fabrication involves surface treatment to impart functionality to the device. Such surface treatment method is the self-assembled monolayer (SAM) technique, which modifies and functionalizes the surface of MEMS components with organic molecule monolayer, possessing a precisely controllable strength that depends on immersion time and solution concentration. These monolayers spontaneously adsorb on polymeric substrates or metal/ceramic components offering high precision at the nanoscale and modifying surface properties. SAM technology has been utilized in various fields, such as tribological property control, mass-production lithography, and ultrasensitive organic/biomolecular sensor applications. This paper provides an overview of the development and application of SAM technology in various fields.

Nanopatterning of Self-assembled Transition Metal Nanostructures on Oxide Support for Nanocatalysts

  • Van, Trong Nghia;Park, Jeong-Young
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.211-211
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    • 2011
  • Nanostructures, with a diversity of shapes, built on substrates have been developed within many research areas. Lithography is one powerful, but complex, technique to make structures at the nanometer scale, such as platinum nanowires for studying CO catalytic reactions [1], or aluminum nanodisks for studying the plasmon effect [2]. In this work, we approach a facile method to construct nanostructures using noble metals on a titania thin film by using self-assembled structures as a pattern. Here, a large-scale silica monolayer is transferred to the titania thin film substrates using a Langmuir-Blodgett trough, followed by the deposition of a thin transition metal layer. Owing to the hexagonal close-packed structure of the silica monolayer, we would obtain a metal nanostructure that includes separated metallic triangles (islands) after removing the patterning silica beads. This nanostructure can be employed to investigate the role of metal-oxide interfaces in CO catalytic reactions by changing the patterning silica particles with different sizes or by replacing the oxide support. The morphology and chemical composition of the structure can be characterized by scanning electron microscopy, atomic force microscopy and X-ray photoelectron spectroscopy. In addition, we modify these islands to a connected island structure by reducing the silica size of the patterning monolayer, which is utilized to generating hot electron flow based on the localized surface plasmon resonance effect of the metal nanostructures.

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Study on Poly(3,4-ethylenedioxythiophene) Thin Film Vapour Phase-Polymerized with Iron(III)Tosylate on AcOH-Catalyzed 3-Aminopropyltriethoxysilane Self-Assembled Monolayer

  • Choi, Sangil;Kim, Wondae;Kim, Sungsoo
    • Journal of Integrative Natural Science
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    • v.5 no.4
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    • pp.233-236
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    • 2012
  • In this study, PEDOT thin films polymerized with Iron(III)tosylate ($Fe(PTS)_3$) and grown on acetic acid-catalyzed 3-aminopropyltriethoxysilane self-assembled monolayer (APS-SAM) surfaces by VPP method have been investigated. PEDOT thin films were synthesized on APS self-assembled $SiO_2$ wafer surface at two different concentrations (20 wt% and 40 wt%) and growth time (3 and 30 minutes), and then they were compared. PEDOT vapour phase-polymerized with 40 wt% $Fe(PTS)_3$ oxidant completely formed a thin film on acetic acid-catalyzed APS-SAM surface while with 20 wt% $Fe(PTS)_3$ did not at all. It means that the oxidant can be uniformly coated on acetic acid-catalyzed APS-SAM surface at the 40 wt% concentration, which gives rise to the uniform growth of PEDOT thin film on it.

Study on Poly(3,4-ethylenedioxythiophene) Thin Film Vapour Phase-Polymerized with Iron(III)Tosylate on High Quality 3-Aminopropyltriethoxysilane Self-Assembled Monolayer

  • Choi, Sangil;Kim, Wondae;Cho, Sung Jun;Kim, Sungsoo
    • Journal of Integrative Natural Science
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    • v.5 no.4
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    • pp.237-240
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    • 2012
  • In this study, PEDOT thin films polymerized with Iron(III)tosylate ($Fe(PTS)_3$) and grown on atomically smooth and highly dense 3-aminopropyltriethoxysilane self-assembled monolayer (APS-SAM) surfaces by VPP method have been investigated. PEDOT thin films were synthesized on APS self-assembled $SiO_2$ wafer surface at two different concentrations (20 wt% and 40 wt%) and growth time (3 and 30 minutes), and then their sheet resistance were measured and compared. PEDOT thin films grown with 20 wt% $Fe(PTS)_3$ oxidant are highly conductive when compared with the film grown with 40 wt% $Fe(PTS)_3$, as ascertained by the measured sheet resistance values down to 0.06 ${\Omega}/cm$. It clearly suggests that 20 wt% is more effective oxidant concentration for VPP than 40 wt% even though the film grown with 40 wt% oxidant has better quality than the film with 20 wt% $Fe(PTS)_3$ does.

Fabrication of Nanostructured Films of Block Copolymers for Nanolithographical Masks (나노리소그래피 마스크용 블록공중합체 나노구조 필름의 제조)

  • Park Dae-Ho;Sohn Byeong-Hyeok;Jung Jin Chul;Zin Wang-Cheol
    • Journal of the Microelectronics and Packaging Society
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    • v.12 no.2 s.35
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    • pp.181-186
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    • 2005
  • We fabricated thin films of polystyrene-block-poly(methyl methacrylate)(PS -b-PMMA) on the self-assembled monolayers(SAM) of 3-(p-methoxyphenyl)propyltrichlorosilane(MPTS) on silicon wafers. Cylindrical nanodomains of PMMA or PS were oriented perpendicular to the surface of silicon wafers due to the neutral affinity of the SAM to PS and PMMA blocks. By selective removal of the PMMA block with UV irradiation and washing, nanoporous films and nanorod assemblies were produced. The nanoporous film can be used for a nanolithographical mask.

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Surface Potential Change Depending on Molecular Orientation of Hexadecanethiol Self-Assembled Monolayers on Au(111)

  • Ito, Eisuke;Arai, Takayuki;Hara, Masahiko;Noh, Jaegeun
    • Bulletin of the Korean Chemical Society
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    • v.30 no.6
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    • pp.1309-1312
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    • 2009
  • Surface potential and growth processes of hexadecanethiol (HDT) self-assembled monolayers (SAMs) on Au(111) surfaces were examined by Kelvin probe method and scanning tunneling microscopy. It was found that surface potential strongly depends on surface structure of HDT SAMs. The surface potential shift for the striped phase of HDT SAMs chemisorbed on Au(111) surface was +0.45 eV, which was nearly the same as that of the flat-lying hexadecane layer physisorbed on Au(111) surface. This result indicates that the interfacial dipole layer induced by adsorption of alkyl chains is a main contributor to the surface potential change. In the densely-packed HDT monolayer, further change of the surface potential was observed, suggesting that the dipole moment of the alkanethiol molecules is an origin of the surface potential change. These results indicate that the work function of a metal electrode can be modified by controlling the molecular orientation of an adsorbed molecule.

Synthesis and application of Pt and hybrid Pt-$SiO_2$ nanoparticles and control of particles layer thickness (Pt 나노입자와 Hybrid Pt-$SiO_2$ 나노입자의 합성과 활용 및 입자박막 제어)

  • Choi, Byung-Sang
    • The Journal of the Korea institute of electronic communication sciences
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    • v.4 no.4
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    • pp.301-305
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    • 2009
  • Pt nanoparticles with a narrow size distribution (dia. ~4 nm) were synthesized via an alcohol reduction method and used for the fabrication of hybrid Pt-$SiO_2$ nanoparticles. Also, the self-assembled monolayer of Pt nanoparticles (NPs) was studied as a charge trapping layer for non-volatile memory (NVM) applications. A metal-oxide-semiconductor (MOS) type memory device with Pt NPs exhibits a relatively large memory window. These results indicate that the self-assembled Pt NPs can be utilized for NVM devices. In addition, it was tried to show the control of thin-film thickness of hybrid Pt-$SiO_2$ nanoparticles indicating the possibility of much applications for the MOS type memory devices.

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Ising Model of Alkanethiol and Its Application to Simulation of a Self-Assembled Monolayer (알칸싸이올 이징 모형의 자기 조립 단분자층 시뮬레이션 응용)

  • Byun, Kisang;Song, Sung Min;Jang, Joonkyung
    • Journal of the Korean Chemical Society
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    • v.64 no.6
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    • pp.345-349
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    • 2020
  • In the self-assembled monolayer (SAM) of alkanethiol formed on a gold surface, some molecules fail to chemisorb with their terminal alkyl groups physisorbed. The previous molecular dynamics (MD) simulation showed that these defects can be cured by thermal annealing. Herein, we present a simple Ising model of alkanethiol. The Monte Carlo simulation based on the present model reproduced the essential features of the annealing of SAM observed in the MD simulation.

Anti-corrosive surface treatment of Mg alloy steel using organic self assembly monolayer technique (유기 단분자막을 이용한 마그네슘 합금 판재 (AZ31)의 내식성 표면처리 기술 연구)

  • Park, Jong-Won;Lee, Gyeong-Hwang;Park, Yeong-Hui
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2009.05a
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    • pp.113-114
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    • 2009
  • 기존의 습식 및 건식 표면처리 공정의 단점을 극복하고, 마그네슘 합금의 가장 큰 문제점인 내식성개선을 위해 열화학기상증착(thermal Chemical Vapor Deposition)법을 이용하여 자기조직화 유기 단분자막(Self-Assembled organic Monolayer, SAM)을 제작하여 마그네슘 합금(AZ31)의 내식성을 검토하였다.

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Formation and Role of Self Assembled Monolayer in Organic Thin Film Transistors

  • Hahn, Jung-Seok
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2007.04a
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    • pp.3-4
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    • 2007
  • 고분자 반도체를 이용한 유기 박막트랜지스터(OTFT) 소자 제작시 특성 향상을 위해 Self-Assemble Monolayer (SAM)을 이용한 유기 Gate 절연막과 source/drain 전극의 표면처리에 대해 설명하였다. Gate insulator의 경우 소수성 SAM이 고분자 반도체와의 상호작용으로 배열도를 향상시켜 이동도를 증가시켰으며, 전극처리의 경우 접촉저항을 낮추어 injection을 증대시키는 효과를 나타내었다. 각각의 경우 적용되는 SAM 재료와 효과를 극대화시키기 위한 처리공정 전반에 대해 설명하였다.

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