• 전기학회논문지P
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• 제59권4호
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• pp.450-455
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• 2010

The performance modeling of a $25{\mu}m$ pitch VGA ${\mu}$-bolometer with the self-aligned thermal resistor structure is carried out. The self-aligned thermal resistor can be utilized for the maximizing the thermal resistance and the fill factor of a bolometer, so the performance improvement can be expected. From the results of the performance modeling of the micro-bolometer with self-align thermal resistor for a $25{\mu}m$ pitch $640{\times}480$ microbolometer designed with $0.6{\mu}m$ minimum feature size, the drastic improvements of NETD from 38.7 mK to 19.1 mK, responsivity of 1.9 times are expected with a self aligned thermal resistor structure. The main reason for the performance improvements with a self-aligned thermal resistor structure comes from the increasement of the thermal resistance.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.258-258
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• 2012

플렉시블 디스플레이를 위해 저온 공정은 필수적이며, 이를 위해 플라스틱 기판을 이용한 연구가 한창 진행 중이다. 이번 연구에서는 도핑처리 하지않고 알루미늄을 이용한 self-aligned 소오스-드레인 구조의 비휘발성 메모리를 ELA 폴리실리콘 기판 상에 제작하였다. 소오스-드레인 부분은 lift-off 공정을 이용하여 pattern 작업을 진행하였다. $250^{\circ}C$에서 1시간의 후속 열처리 공정을 진행한 self-aligned 소오스-드레인 구조의 비휘발성 메모리는 후속 열처리 공정을 진행하지 않았을 때와 비교하여 다음과 같은 메모리의 특성향상을 나타내었다. 메모리 윈도우 특성의 경우 1.15 V에서 3.47 V의 커다란 증가를 보였으며 retention 특성의 경우 12%에서 46%로 증가하였다. 이를 통해 비록 도핑 되지 않은 비휘발성 메모리 소자일지라도 self-aligned 구조와 저온 열처리를 이용할 시 향후 플렉시블 전자소자에의 적용이 가능함을 확인하였다.

• 전자공학회논문지D
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• 제35D권7호
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• pp.88-93
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• 1998

For the self-aligned AlGaAs/GaAs HBTs, the surface states at the interface between the extrinsic base surface and the passivation nitride is a major cause of degradation of dc characteristics. In this paper the degradation mechanisms of self-aligned AlGaAs/GaAs HBT were analyzed, and GaAs HBTs, which employed an InGaP ledge emitter structure formed by the nonself-aligned process to cover the surface of the extrinsic base and reduce the surface states, produced high reliability. Accoridng to the acceleration lifetime test, the nonself-aligned InGaP/GaAs HBTs produced very reliable dc characteristics comparing with the self-aligned AlGaAs/GaAs HBTs. The activation energy was 1.97eV and MTTF $4.8{\times}10^{8}$ hrs at $140^{\circ}C$ which satisfied the MIL standard.

• 한국광학회:학술대회논문집
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• 한국광학회 1990년도 제5회 파동 및 레이저 학술발표회 5th Conference on Waves and lasers 논문집 - 한국광학회
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• pp.269-273
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• 1990

The proton conserving effect of diffusion with self-aligned SiO2-cladding is investigated by infrared transmission spectra. Based on the proton conserving effect, proton-diffused channel waveguides with self-aligned SiO2-cladding substrates. And an electro-optic cutoff modulator with self aligned electrode that utilizes a single-mode proton-diffused channel waveguide in a Y-cut XX-propagating LiNbO3 substrate is fabricated. Over 20 dB extinction has been achieved with applied voltage of 15V.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.1564-1567
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• 2008

We demonstrate here a self-aligned printing approach that allows downscaling of printed organic thin-film transistors to channel lengths of 100 - 400 nm. A perfected down-scaled polymer transistors (L= 200 nm) showing high transition frequency over 1.5 Mhz were realized with thin polymer dielectrics, controlling contact resistance, and minimizing overlap capacitance via self-aligned gate configuration.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.783-786
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• 2003

A simple fabrication method of self-aligned ridge waveguides with dielectric side buffers is demonstrated on +Z- cut LiNbO$_3$. The ridge waveguide is fabricated by a combination of the annealed proton exchange process and the proton-exchanged wet etching technique. The self-aligned process is achieved by wet etching of aluminum.

• 한국전기전자재료학회논문지
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• 제19권4호
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• pp.367-372
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• 2006

A carbon nanotube field emission display(CNT FED) panel with a 2 inch diagonal size was fabricated using a screen printing of a prepared photo-sensitive CNT paste and vacuum in-line sealing technology. After a surface treatment of the patterned CNT, only the carbon nanotube tips are uniformly exposed on the surface. The diameter of the exposed CNTs are usually about 20 nm. Using the photo-sensitive CNT paste, we have developed a triode type CNT FEA with a self-aligned gate-emitter structure. The turn on voltage was around 100 V which corresponds to according the turn on field of about $40V/{\mu}m$. By the creation of a self-aligned gate-emitter structure, it is expected that the screen printed photo-sensitive CNT paste is promising as a good candidate for the large size field emission display.

• 대한전자공학회논문지TE
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• 제37권3호
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• pp.1-5
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• 2000

A waveguide of coupled optical modulator was fabricated on LiNbO$_3$ based on proton exchange with self-aligned thin film electrode method. The electrode pattern was designed using a self-aligned method. After proton exchange process, the waveguide was prepared by annealing process. The initial crossover state of the fabricated 2$\times$2 coupled optical modulator was observed with controlling the annealing process variables and the structure of self-aligned thin film electrodes. It was shown form the present work that the measured crosstalk is -29.5[dB] and 8.0[V] of detected modulating voltage.

• 한국광학회:학술대회논문집
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• 한국광학회 1989년도 제4회 파동 및 레이저 학술발표회 4th Conference on Waves and lasers 논문집 - 한국광학회
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• pp.222-224
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• 1989

A new fabrication method of proton-diffused LiNbO3 channel waveguides with self-aligned SiO2-Cladding structures are reported, which provides easy control of mode pattern shapes and sizes.

• 대한전기학회논문지
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• 제41권2호
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• pp.170-177
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• 1992

Contact resistance and contact leakage current of the Al/TiSiS12T/Si system are investigated for NS0+T and PS0+T junctions. SALICIDE (Self Aligned Silicide) process was used to make the Al/TiSiS12T/Si system. Titanium disilicide is one of the most common silicides because of its thermal stability, ability to form selective formation and low resistivity. In this paper, RTA temperature effect and Junction implant dose effect were evaluated to characterize contact resistance and contact leakage current. The TiSiS12T contact resistance to NS0+T silicon is lower than that to PS0+T silicon, and TiSiS12T of contact leakage current to NS0+T silicon is lower than that to PS0+T silicon. Contact resistance and contact leakage current of the Al/TiSiS12T/Si system by this method were possible for VLSI application.