• 한국표면공학회지
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• 제49권1호
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• pp.40-45
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• 2016

Recently, $Bi_2Te_3$-based alloys are the best thermoelectric materials near to room temperature, so it has been researched to achieve increased figure of merit(ZT). Ternary compounds such as Bi-Te-Se and Bi-Sb-Te have higher thermoelectric property than binary compound Bi-Te and Sb-Te, respectively. Compared to DC plating method, pulsed electrodeposition is able to control parameters including average current density, and on/off pulse time etc. Thereby the morphology and properties of the films can be improved. In this study, we electrodeposited n-type ternary Cu-doped $Bi_2(Te-Se)_3$ thin film by modified pulse technique at room temperature. To further enhance thermoelectric properties of $Bi_2(Te-Se)_3$ thin film, we optimized Cu doping concentration in $Bi_2(Te-Se)_3$ thin film and correlated it to electrical and thermoelectric properties. Thus, the crystal, electrical, and thermoelectric properties of electrodeposited $Bi_2(Te-Se)_3$ thin film were characterized the XRD, SEM, EDS, Seebeck measurement, and Hall effect measurement, respectively. As a result, the thermoelectric properties of Cu-doped $Bi_2(Te-Se)_3$ thin films were observed that the Seebeck coefficient is $-101.2{\mu}V/K$ and the power factor is $1412.6{\mu}W/mK^2$ at 10 mg of Cu weight. The power factor of Cu-doped $Bi_2(Te-Se)_3$ thin film is 1.4 times higher than undoped $Bi_2(Te-Se)_3$ thin film.

• 융합정보논문지
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• 제11권2호
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• pp.90-97
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• 2021

본 연구에서는 산업현장에서 미활용되는 열에너지를 회수하여 유용한 전기에너지로 변환하기 위한 Bi2Te3 계열 열전소자를 제작하고 에너지회수 성능 및 물성을 도출하였다. 성능시험을 위하여 카트리지 히터 가열 방식의 가열블록과 냉매가 흐르는 냉각블록으로 구성된 전용 실험장치를 구성하였으며, 가열블록과 냉각블록에는 3×3 배열의 열전대를 장착하여 소자 양 면 온도와 열전달율을 도출하였다. 최소 온도차 27K부터 최대 온도차 172.2K까지 총 9가지의 온도차에 대해 실험을 수행하여 V-I curve와 P-R curve를 도출하였고 성능에 주요한 영향을 미치는 제벡계수 등 변수 7가지에 대하여 온도차에 대한 함수로 결과를 제시하였다. 최대 발전양 7.5W와 변환효율 11.3%의 결과로부터 개발된 열전소자의 열에너지 회수 성능의 타당성을 검증하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.230-233
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• 2001

FeSi2/Si Layer were grown using FeSi2, Si wafer by the chemical transport reactio nmethod. The directoptical energy gap was found to be 0.871eV at 300 K. The Hall effect is a physical effect arising in matter carrying electric current inthe presence of a magnetic field. The effect is named after the American physicist E. H. Hall, who discovered it in 1879. IN this paper, we study electrical properties of FeSi2/Si layer. And then we measured Hall coefficient Hall mobility, carrier density and Hall voltage according to variation magnetic field and temperature, Because of important part for it applicationVarious phase of silicide is formed at the metal-Si interface when transition metal contacts to Si. Silicides belong to metallic or semiconducting according to their electrical and optical properties. Metallic silicides are used as gate electrodes or interconnections in VLSI devices. Semiconducting silicides can be used as a new material for IR detectors because of their narrow energy band gap.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.234-237
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• 2001

FeSi2/Si Layer were grown using FeSi2, Si wafer by the chemical transport reactio nmethod. The directoptical energy gap was found to be 0.871eV at 300 K. The Hall effect is a physical effect arising in matter carrying electric current inthe presence of a magnetic field. The effect is named after the American physicist E. H. Hall, who discovered it in 1879. IN this paper, we study electrical properties of FeSi2/Si layer. And then we measured Hall coefficient Hall mobility,carrier density and Hall voltage according to variation magnetic field and temperature, Because of important part for it applicationVarious phase of silicide is formed at the metal-Si interface when transition metal contacts to Si. Silicides belong to metallic or semiconducting according to their electrical and optical properties. Metallic silicides are used as gate electrodes or interconnections in VLSI devices. Semiconducting silicides can be used as a new material for IR detectors because of their narrow energy band gap.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.234-237
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• 2001

FeSi$_2$/Si Layer were grown using FeSi$_2$, Si wafer by the chemical transport reaction method. The directoptical energy gap was found to be 0.871ev at 300 K. The Hall effect is a physical effect arising in matter carrying electric current in the presence of a magnetic field. The effect is named after the American physicist E. H. Hall, who discovered it in 1879. In this paper, we study electrical properties of FeSi$_2$/Si layer And then we measured Hall coefficient Hall mobility, carrier density and Hall voltage according to variation magnetic field and temperature, Because of important Part for it application Various phase of silicide is formed at the metal-Si interface when transition metal contacts to Si. Silicides belong to metallic or semiconducting according to their electrical and optical properties. Metallic silicides are used as gate electrodes or interconnections in VLSI devices. Semiconducting silicides can be used as a new material for IR detectors because of their narrow energy band gap.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.230-233
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• 2001

FeSi$_2$ Layer were grown using FeSi$_2$, Si wafer by the chemical transport reaction method. The directoptical energy gap was found to be 0.87leV at 300 K. The Hall effect is a Physical effect arising in matter carrying electric current in the presence of a magnetic field. The effect is named after the American physicist E.H. Hall, who discovered it in 1879. In this paper, we study electrical properties of FeSi$_2$/Si layer. And then we measured Hall coefficient Hall mobility, carrier density and Hall voltage according to variation magnetic field and temperature, Because of important part for it application various phase of silicide is formed at the metal-Si interface when transition metal contacts to Si. Silicides belong to metallic or semiconducting according to their electrical and optical properties. Metallic silicides are used as gate electrodes or interconnections in VLSI devices. Semiconducting silicides can be used as a new material for IR detectors because of their narrow energy band gap.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 추계학술대회 논문집
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• pp.897-900
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• 2005

This paper presents temperature control of aluminum plate using Peltier module. As one of the thermoelectric effect, Peltier effect is heat pumping phenomena by electric energy. So if current is charged to Peltier module, it absorbs heat from low temperature side and emits heat to high temperature side. In this experiment, Peltier module is used to control the temperature of small aluminum plate with heating and cooling ability of Peltier module with current control and fan On/OFF control. And current control of Peltier module was accomplished by PWM method. As a results of experiments, it takes about 125sec to control temperature of aluminium plate between $30^{\circ}C\;and\;70^{\circ}C$ and about 70sec between $40^{\circ}C\;and\;60^{\circ}C$, in ambient temperature $29^{\circ}C$ while operating cooling fan only while cooling duration. Future aim is to realize more rapid temperature control and develop SMHA(special metal hydride actuator) by using Peltier module as a heating and cooling source.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2005년도 ICCAS
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• pp.1400-1404
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• 2005

This paper presents the temperature control of aluminum plate by using Peltier element. Peltier effect is heat pumping phenomena by electric energy as one of the thermoelectric effect. So if current is charged to Peltier element, it absorbs heat from low temperature side and emits heat to high temperature side. In this experiment, Peltier element is used to control the temperature of small aluminum plate with current control and operating cooling fan only while cooling duration. Operating cooling fan only while cooling duration is proper to get more rapid heating and cooling duration. As a result of experiment, it takes about 100sec period to repeating temperature between $35^{\circ}C$ and $70^{\circ}C$ and about 80sec from $40^{\circ}C$ to $70^{\circ}C$ in ambient air temperature $25^{\circ}C$ and while operating cooling fan only in cooling duration. Future aim is to apply this temperature control method in actuating SMHA(special metal hydride actuator) which is applicable in Siver project acting in low frequency range by using Peltier element for heating and cooling.

• 한국분말재료학회지
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• 제8권2호
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• pp.110-116
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• 2001

Abstract To investigate the effect of mechanical alloying process to thermoelectric properties of PbTe sintered body, Pb-Te mixed powder with Pb : Te : 1 : 1 composition was mechanically alloyed using tumbler-ball mill. Thermoelectric properties of the sintered body were evaluated by measuring of the Seebeck coefficient and specific electric resistivity from the room temperature to 50$0^{\circ}C$. Sintered body of only mechanically alloyed PbTe powder showed p-type behavior at the room temperature, and occurred type transition from p-type to n-type at about 30$0^{\circ}C$. PbTe sintered body which was fabricated using heat treated powder in $H_2$ atmosphere after mechanical alloying showed stable n-type behavior under 50$0^{\circ}C$. N-type PbTe sintered body fabricated by mechanical alloying process had 4 times higher power factor than that fabricated by the melt-crushing process. Application of a mechanical alloying process to fabricate of n-type PbTe thermoelectric material seemed to be useful to increase the power factor of PbTe sintered body.

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2008년도 춘계학술발표대회 논문집
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• pp.68-74
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• 2008

This paper describes the causes and effects that have influence on thermoelectric generation. If heat transfer is unequal to thermoelectric modules, we could not get the maximum thermoelectric power. So, by experiment, we analysed the differences of power generation according to the state of the contact between thermoelectric module and heat source. And with the variation of heat transfer area, the generated power was analysed also. Using the experimental results we proposed a thermoelectric generation system.