• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1255-1257
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• 2005

The increase of secondary electron-emitting coefficient is effective to reduce the discharge voltage as well as to improve the luminance efficiency of PDP. We investigated the properties of ${\gamma}$ with composition and different dielectric constants, and the microstructure of dielectric after ion collision. As a result the dielectric of PbO system showed higher ${\gamma}$ compared with Pb-free system. However, there was no difference in ${\gamma}$ when the MgO protective layer was covered.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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• pp.117-118
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• 2000

The secondary electron emission coefficient ${\gamma}$ of MgO single crystals according to the gas mixture ratio of Xe to Ne have been investigated by ${\gamma}-focused$ ion beam system. It is found that the MgO single crystals of (111) crystallinity has the highest ${\gamma}$ from 0.09(0.03) up to 0.16(0.04), while from 0.07(0.02) to 0.15(0.03) for (200) and from 0.06(0.01) to 0.13(0.02) for (220) crystallinity for operating Ne (Xe) ions ranging from 50eV to 200eV throughout this experiment. And it is found that the ${\gamma}$ ranged from 0.03 up to 0.06 for Ne-Xe mixtures are much smaller than those of 0.09 up to 0.16 for pure Ne ions under accelerating voltage ranged from 50V to 200V.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2004년도 제27회 학술발표회 초록집
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• pp.221-222
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• 2004

• 한국진공학회지
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• 제11권2호
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• pp.108-112
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• 2002

AC 플라즈마 디스플레이 패널의 보호막으로 널리 사용되고 있는 MgO막의 2차 전자 방출계수를 저에너지 불활성 기체이온에 대해 펄스 이온빔 기법으로 측정하였다. 실리콘 산화막의 헬륨이온에 의한 2차 전자 방출계수는 300 eV에서 0.82를 보였지만 50 eV에서는 0.22보여 운동에너지에 대한 상당한 의존성을 보였다. 한편, MgO막의 이차전자 방출계수는 이온에 의한 스퍼터링이 지속됨에 따라 0.62에서 0.3으로 감소함으로써 이온충돌이 MgO의 이차전자 방출계수에 상당한 영향을 미치는 것을 확인할 수 있었다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.877-881
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• 2006

We obtained sputtering yields for the MgO, $MgAl_2O_4$ and $MgAl_2O_4/MgO$ films using the FIB system. $MgAl_2O_4/MgO$ protective layers have been found to have less $24^{\sim}^30%$ sputtering yield values from 0.24 atoms/ion up to 0.36 atoms/ion than MgO layers with the values from 0.36 atoms/ion up to 0.45 atoms/ion for irradiated $Ga^+$ ion beam whose energies ranged from 10 keV to 14 keV. And $MgAl_2O_4$ layers have been found to have lowest sputtering yield values from 0.88 up to 0.11. It is also found that $MgAl_2O_4/MgO$ and MgO have secondary electron emission $coefficient({\gamma})$ values from 0.09 up to 0.12 for $Ne^+$ ion whose energies ranged from 50 eV to 200 eV.

• 한국전기전자재료학회논문지
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• 제20권8호
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• pp.716-719
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• 2007

The effects of the evaporation rate of MgO films using an electron beam on the MgO properties and the discharge characteristics of a plasma display panel (PDP) were investigated and analyzed. MgO films were deposited with the various MgO evaporation rates. The MgO properties such as the crystal orientation, the surface roughness, and the film structure were inspected using XRD (X-ray diffraction), AFM (atomic force microscopy). From the experiments and Paschen law, the maximum value of the secondary electron emission coefficient $({\gamma})$ was obtained at the evaporation rate of $5{\AA}/sec$. The XRD results and cathode-luminescence (CL) spectra show the ${\gamma}$ values are correlated with F/F+ centers of the molecular structure of MgO films. The minimum firing voltage and the maximum luminous efficiency were obtained at an evaporation rate of $5{\AA}/sec$. In the MgO film deposited at $5{\AA}/sec$, the (200) orientation and F+ center were most intensive.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.799-801
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• 2003

The secondary electron emission $coefficient({\bullet})$ of vacuum annealed MgO films has been investigated by ${\bullet}$ -focused ion beam(${\bullet}$ -FIB) system. The vacuum annealed MgO films have been found to have higher ${\bullet}$ values than those for as-deposited MgO films for Ne+ ion. Also it is found that the ${\bullet}$ for air-hold of vacuum annealed MgO layers for 24-hours is similar to that for vacuum annealed MgO films without any air-hold.

• Applied Science and Convergence Technology
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• 제24권6호
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• pp.232-236
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• 2015

The electro-optical characteristics of several functional layers over the MgO protective layer were studied during the continuous discharge of an AC-PDP. In order to observe the degradation of each functional layer on the MgO protection layer, we measured the surface morphology, cathodoluminescence (CL) spectrum, the secondary electron emission coefficient (${\gamma}$) and the discharge characteristics after 500 hours of discharge during the operation of the AC-PDP.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.432-435
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• 1997

In AC PDP, electrodes are covered with dielectric layer and the discharge is formed on the surface of the dielectric layer. MgO protection layer on the dielectric layer in PDP prevents a dielectric layer from sputtering and lowers the firing voltage due to a large secondary electron emission yield( ${\gamma}$ ). Until now, the MgO protection layer is mainly prepared by E-beam evaporation. However, there are some problems that is easy pollution and change of its characteristics with time and delamination. Therefore, in this study, MgO protection layer is prepared on dielectric layer by reactive R.F. magnetron sputtering with MgO target. Discharge characteristics and secondary electron emission coefficients of PDP are studied as a parameter of preparation conditions. Discharge voltage characteristics of the prepared MgO layer can be stable and improved by the annealing process in vacuum chamber.

• 센서학회지
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• 제9권5호
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• pp.350-356
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• 2000

광출력이 크고, 방사선 손상이 작은 플라스틱 섬광체를 제작하기 위하여 제1용질 p-terphenyl과 제2용질 popop의 조성비에 따른 $^{60}Co$ $\gamma$-선에 대한 손상과 상대적 광출력을 조사하였다. $^{60}Co$ $\gamma$-선에 의한 손상은 주로 제2용질의 농도에 의존하였다. 발광스펙트럼의 파장범위는 $400{\sim}450\;nm$이고, 중심파장은 415 nm이었다. $^{60}Co$ $\gamma$-선의 조사량이 $1{\times}10^4\;Gy$까지는 방사선 손상에 의한 광투광율파 광출력 등이 변하지 않았다.