• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.275-275
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• 2013

Formation and characterization of self-assembled monolayers (SAMs) on various surfaces are the essential basis for many other applications, including molecular switches, biosensors, microfluidics, and fundamental studies in surfaces and interfaces. To improve the performance at these applications, it is a key to control the quantity of each molecule in various mixed SAMs on the surface. In this study, using mixed SAM of carbamate-based hydroquinone (HQ)-PhBr and11-mercaptoundecanol, the quantitative mass spectrometric method of mixed SAM was developed based on comparison study with XPS and FT-IR methods. In addition, our method was applied to another mixed SAM of biotinylated PEG alkane thiol and 11-mercaptoundecanol for verification purpose. Time-of-flight secondary mass spectrometry (ToF-SIMS) analysis was performed to identify and quantify each molecule of mixed SAM along with principal component analysis (PCA). Since there is no matrix effect in the X-ray photoelectron spectroscopy (XPS) and Fourier transform-infrared (FT-IR) techniques, we compared ToF-SIMS results with XPS and FT-IR results. Because PCA results from ToF-SIMS analysis are well matched with XPS and FT-IR results from both mixed SAMs, we are expecting that our method will be useful to identify and quantify each molecule in various mixed SAMs.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.274-274
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• 2012

In-depth analysis by secondary ion mass spectrometry (SIMS) is very important for the development of electronic devices using multilayered structures, because the quantity and depth distribution of some elements are critical for the electronic properties. Correct determination of the interface locations is critical for the calibration of the depth scale in SIMS depth profiling analysis of multilayer films. However, the interface locations are distorted from real ones by the several effects due to sputtering with energetic ions. In this study, the determination of interface locations in SIMS depth profiling of multilayer films was investigated by Si/Ge and Ti/Si multilayer systems. The original SIMS depth profiles were converted into compositional depth profiles by the relative sensitivity factors (RSF) derived from the atomic compositions of Si-Ge and Si-Ti alloy reference films determined by Rutherford backscattering spectroscopy. The thicknesses of the Si/Ge and Ti/Si multilayer films measured by SIMS depth profiling with various impact energy ion beam were compared with those measured by TEM. There are two methods to determine the interface locations. The one is the feasibility of 50 atomic % definition in SIMS composition depth profiling. And another one is using a distribution of SiGe and SiTi dimer ions. This study showed that the layer thicknesses measured with low energy oxygen and Cs ion beam and, by extension, with method of 50 atomic % definition were well correlated with the real thicknesses determined by TEM.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.4
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• pp.608-613
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• 2017

We proposed a pyrometallurgical process to achieve gold alloy with an Au content of more than 80wt% from low grade (<35wt%) gold alloys. We performed the heat treatment at a temperature of $1200^{\circ}C$ for 5 hrs using Au35wt%-Ag5wt%-Cu60wt% gold alloys mixed with 1/2 weighed PbO and CaO flux by varying the ratio of PbO/(PbO+CaO) from 0 to 1. We investigated the change in content of the samples with energy dispersive X-ray spectroscopy (EDS) and time of flight secondary ion mass spectrometry (ToF-SIMS). The EDS results showed that the Au content increased from 35.0wt% in the PbO-only sample to 86.7wt% (in the PbO/(PbO+CaO) 1:1 sample), while the other samples achieved more that 84wt%. In addition, the 2/3 flux ratio sample showed the lowest Ag loss into the flux. In the ToF-SIMS results, the PbO only and CaO only fluxes had Au+ peak intensities of 349 and 37, respectively. Although the CaO-only flux might be more favorable considering the loss of Au into the flux, we concluded that the amount of Au lost into the flux could be ignored. Our results imply that that the pyrometallurgical process using a mixed flux is an effective hydrometallurgical process.

• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.475-480
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• 2001

Diffusion of Cu into the low-k para-xylene based plasma polymer (pXPP) thin films deposited by plasma-enhanced chemical vapor deposition using the para-xylene precursor was comparatively measured using various methods. Cu layer was deposited on the surfaces of pXPPs treated by $N_2$ plasma generated in a magnetically enhanced inductively coupled plasma reactor. Diffusion characteristics of Cu into pXPPs were measured using Rutherford backscattering spectroscopy (RBS), secondary ion mass spectroscopy (SIMS), cross-sectional transmission electron microscopy (XTEM), and current-voltage (I-V) measurements for the vacuum-annealed Cu/pXPPs for 1 hour at $450^{\circ}C$ and were compared. The results showed a correlation between the I-V measurement and SIMS data are correlated and have a sensitivity enough to evaluate the dielectric properties but the RBS or XTEM measurements are not sufficient to conclude the electrical properties of low-k dielectrics with Cu in the film bulk. The additional results indicate that the pXPP layers are quite resistant to Cu diffusion at the annealing temperature of $450^{\circ}C$ compared to the other previously reported organic low-k materials.

• Korean Journal of Materials Research
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• v.1 no.3
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• pp.125-131
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• 1991

Boron penetration phenomenon of $p^{+}$ silicon gate with as-deposited amorphous or polycrystalline Si upon high temperature annealing was investigated using high frequency C-V (Capacitance-Volt-age) analysis, CCST(Constant Current Stress Test), TEM(Transmission Electron Microscopy) and SIMS(Secondary Ion Mass Spectroscopy), C-V analysis showed that an as-deposited amorphous Si gate resulted in smaller positive shifts in flatband voltage compared wish a polycrystalline Si gate, thus giving 60-80 percent higher charge-to-breakdown of gate oxides. The reduced boron penetration of amorphous Si gate may be attributed to the fewer grain boundaries available for boron diffusion into the gate oxide and the shallower projected range of $BF_2$ implantation. The relation between electron trapping rate and flatband voltage shift was also discussed.

• Journal of the Korean Vacuum Society
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• v.6 no.4
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• pp.321-325
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• 1997

Recently, photosensitive color filters have received much attention for their use in the liquid crystal display (LCD) industry. It is well known that chemical and physical properties of polymer surfaces can be modified by special surface treatments. In this work, we have studied the polymer surfaces of LCD blue color filters which were exposed to the UV light during photolithography. A better understanding of the irradiated polymer surfaces is required for the subsequent processes such as plasma etching, ITO electrode deposition, etc. The surface analysis has been undertaken using secondary ion mass spectrometry (SIMS), x-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). A significant enrichment of the pigment component and roughening of surface with bubble-like feature have been observed at the modified polymer surface.

• Journal of the Korean institute of surface engineering
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• v.49 no.5
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• pp.467-471
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• 2016

In order to investigate the Na gettering, PSG/$SiO_2$/Al-1%Si multilevel thin films were fabricated. DC magnetron sputter techniques and APCVD (atmosphere pressure chemical vapor deposition) were utilized for the deposition of Al-1%Si thin films and PSG/$SiO_2$ passivations, respectively. Heat treatment was carried out at $300^{\circ}C$ for 5 h in air. SIMS (secondary ion mass spectrometry) depth profiling and XPS (X-ray Photoelectron Spectroscopy) analysis were used to determine the distribution and binding energies of Na, Al, Si, O, P and other elements throughout the PSG/$SiO_2$/Al-1%Si multilevel thin films. Na peaks were mainly observed at the the PSG/$SiO_2$ interface and at the $SiO_2$/Al-1%Si interfaces. Na impurity gettering in PSG/$SiO_2$/Al-1%Si multilevel thin films is considered to be caused by a segregation type of gettering. The chemical state of Si and O elements in PSG passivation appears to be $SiO_2$.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.355-355
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• 2016

There has been an explosive development of nanocrystal (NC) synthesis and application due to their composition-dependent specific properties. Despite the composition, shape, and size of NCs foremost determine their physicochemical properties, the surface state and molecule conjugation also drastically change their characteristics. To make practical use of NCs, it is a prerequisite to understand the NC surface state and the degree to which they have been modified because the reaction occurs on the interface between the NCs and the surrounding medium. We report in here an analysis method to identify conjugated ligands and their binding states on semiconductor nanocrystals based on their molecular information. Surface science techniques, such as time-of-flight secondary-ion mass spectrometry (ToF-SIMS) and FT-IR spectroscopy, are adopted based on the micro-aggregated sampling method. Typical trioctylphosphine oxide-based synthesis methods of CdSe/ZnS quantum dots (QDs) have been criticized because of the peculiar effects of impurities on the synthesis processes. Since the ToF-SIMS technique provides molecular composition evidence on the existence of certain ligands, we were able to clearly identify the n-octylphosphonic acid (OPA) as a surface ligand on CdSe/ZnS QDs. Furthermore, the complementary use of the ToF-SIMS technique with the FT-IR technique could reveals the OPA ligands' binding state as bidentate complexes.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.289.1-289.1
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• 2016

Germanium (Ge) with higher carrier mobility and a lower crystallization temperature has been considered as the channel material of thin-film transistors for display applications. Various methods were studied for crystallizaion of poly-Ge from amorphous Ge at low temperature. Especially Metal induced crystalliazation (MIC) process was widely studied because low process cost. In this paper, we investigate copper diffusion process of different thick (70 nm, 350 nm) poly-Ge film obtained by MIC process at various temperatures (250, 300, and $350^{\circ}C$) through atomic force microscopy (AFM), Raman spectroscopy, and secondary ion mass spectroscopy (SIMS) measurement. Crystallization completeness and grain size was similar in all the conditions. Copper diffusion profile of 370 nm poly-Ge film show simirly results regardless of process temperature. However, copper diffusion profile of 70 nm poly-Ge film show different results by process temperature.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.9 no.1
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• pp.106-113
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• 2010

The most suitable condition for plasma source ion implantation(PSII) was found based on the study of the characteristics of PSIIed tool and machined surfaces. The depth analysis according to the chemical bonding state of elements and surface component elements through the XPS and SIMS, was conducted to find the improved property of the PSIIed surface. Due to the diffusion of PSII, the nitrogen was found up to a depth of about 150nm according to the supplied voltage and ion implanted time. The deep diffusion by nitrogen caused the surface modification, but the formation of oxide component was found due to the residual gas contamination on the surface. Statistical method of ANOVA was conducted to find the effects of spindle speed and feed rate in interaction for machined surface roughness with PSIIed tools. The surface modification was found largely occurred by the nitrogen implanted surface with 2 hours for 27kV, 35kV and 43kV.