• Journal of the Korean Society for Precision Engineering
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• v.32 no.4
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• pp.387-394
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• 2015

We analyze heat generation as well as temperature distribution induced by accelerated electron impact on a target in a closed x-ray tube. For the sake of accuracy, we use Monte carlo analysis. This method gives accurate energy deposit in a medium with additional information such as secondary and backscattered electron as well as their paths. A Tungsten coated layer is divided by small rectangular cell which accumulate energy loss of primary electron beam. The cells and their accumulated energy datum are used for the input of finite element analysis. The Maximum temperature rising and temperature distribution were analyzed by transient heat analysis. Some temperature parameters such as target size and coating thickness were varied to investigate temperature sensitivity. Temperatures were compared each other to find primary variable that affect temperature rising on the x-ray target. The results will be helpful in development highresolution x-ray tube and related industries.

• Proceedings of the KIEE Conference
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• 1998.07e
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• pp.1767-1769
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• 1998

We have established a pulsed electron beam generation system with an energy of 200[keV], pulse repetition rate of 200[Hz], and several tens of [${\mu}s$] pulse width. The system is characterized by a cold cathode that is simpler than the hot cathode. Target object does not need to be scanned because of large aperture electron beam of 300[$cm^2$]. Electron source is secondary electrons that are generated when the ions from the glow discharge collide on the cathode surface. In this paper, the discharge current characteristics are investigated experimentally as a function of He gas pressure in order to obtain stable glow discharge. And computer simulations are carried out as a preliminary study for the development of low energy large aperture electron beam generator. The variation of electon beam current is investigated as a function of rising time of high voltage when 20[kV] potential is applied in 20[mTorr] pressure.

• Journal of the Korean Ceramic Society
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• v.32 no.12
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• pp.1377-1382
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• 1995

A high-resolution transmission electron microscopy study on the lattice defects formed in the high energy P ion implanted silicon was carried out on an atomic level. Results show that Lomer dislocations, 60$^{\circ}$perfect dislocations, 60$^{\circ}$ dislocation dipole and extrinsic stacking fault formed in the near Rp of as-implanted specimen. In the annelaed specimens, interstitial Frank loops, 60$^{\circ}$perfect disolations, 60$^{\circ}$dislocation dipoles, stacking faults, precipitates, perfect dislocation loops and <112> rodlike defects existed exclusively near in the Rp with various annealing temperature and time. From these results, it is concluded that extended secondary defects as well as the point defect clusters could be formed without annealing. Even at low temperature annealing such as 55$0^{\circ}C$, small interstitial Frank loops could be formed and precipitates were also formed by $700^{\circ}C$ annealing. The defect band annealed at 100$0^{\circ}C$ for 1 hr could be divided into two regions depending on the distribution of the secondary defects.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.7
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• pp.615-619
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• 2007

MgO layer plays an important role for plasma display panels (PDPs). In this experiment, ion beam assisted deposition (IBAD) methode was uesed to deposit a MgO thin film and the assisting oxygen ion beam energy was varied from 100 eV to 500 eV. In order to investigate the relationship between the secondary electron emission and the defect levels of the MgO layer, we measured the cathodoluminescence (CL) spectra of the MgO thin films, and we analyzed the CL peak intensity and peak transition. The results showed that the assisting ion beam energy played an important role in the peak intensity and the peak transition of the CL spectrum. The properties of MgO thin film were also analyzed using XRD and SEM, these results showed the assisting ion beam energy had direct effect on characteristics of MgO thin film.

• Journal of the Korean Electrochemical Society
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• v.10 no.2
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• pp.88-93
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• 2007

Nano-sized Sn particles were coated with Ni-P layer using an electroless deposition method and their anodic performance was tested for lithium secondary batteries. Uniform coating layers were obtained, of which the thickness was controlled by varying the $Ni^{2+}$ concentration in the plating bath. It was found that the Ni-P layer plays two important roles in improving the anodic performance of Sn powder electrode. First, it prevents the inter-particle aggregation between Sn particles during the charge/discharge process. Second, it provides an electrical conduction pathway to the Sn particles, which allows an electrode fabrication without an addition of conductive carbon. A pseudo-optimized sample showed a good cyclability and high capacity ($>400mAh\;g^{-1}$) even without conductive carbon loading.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.13 no.3
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• pp.40-47
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• 1999

We have established a pulsed low-energy large-aIXTture electron beam(LELAEB) generation system with an energy of 2OO[keV], current of 1[A], pulse repetition rate of 200[Hz], and several tens of ${\mu}s$ pulse width. The system is characterized by a cold cathode that is simpler than the hot cathode. Electron beam does not need to be scanned over target objects because of large beam aIXTture of $300[\textrm{cm}^2]$. Electron source is secondary electrons that are generated when the ions from the glow discharge collide on the cathode surface. In this paper, We report about the design and manufacture of LELAEB generation system based on the theoretical analysis in order to study lXlssibility of increasing the efficiency of IELAEB accelerator. We also report on the possibility of large aperture beam current generation and the current density uniformity based on the experiIrental results.esults.

• Radiation Oncology Journal
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• v.1 no.1
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• pp.11-19
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• 1983

Interaction between high energyelectrons and matters had many complex reactions and the high energy electrons lost their energies with collision and scattering, therefore, electrons distribution in matters was shown as various situation by scattering, exciting and ionizing with moleculars. We experimentally studies with 13 MeV Linear Accelerator and thermoluminescence dosimeter using aluminium and Teflon, etc., and measured energy loss of electrons, electron range, electron scattering and dose distribution in matter. We compared the results with theoretical formular, between 4-qw MeV, the energy loss of electrons was decreased by 2 MeV per $1g/cm^2$ but under 1MeV it was rapidly decreased. Electron range in matter reached to $0.5/cm^2$ per 1MeV of incident energy at 6-12MeV. The dose distribution in matter was increased slightly to some depth by total distribution i.e., the combined intensity of primary and secondary radiant and it was rapidly decreased near the maximum range of electrons. Energy loss of electrons and electron range measured by experiment were coincided with theoretical equations of L. Landau and Feather under 5 and 3% errors respectively. The dose distribution of electrons in matter was similar to L.V. Spencer formular, however, we had found that it was quite different in accordance with the field size and that new formular of dose distribution was induced as empirical function contained experimental factors according to field size.

• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.1
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• pp.67-74
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• 2009

Monte Carlo simulation is widely used for predicting ion implantation profiles in amorphous targets. Here, we compared Monte Carlo simulation results with a vast database of ion implantation secondary ion mass spectrometry (SIMS), and showed that the Monte Carlo data sometimes deviated from the experimental data. We modified the electron stopping power model, calibrated its parameters, and reproduced most of the database. We also demonstrated that Monte Carlo simulation can accurately predict profiles in a low energy range of around 1keV once it is calibrated in the higher energy region.

• Korean Journal of Breeding Science
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• v.40 no.1
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• pp.15-21
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• 2008

It was previously pointed out that mutation is the ultimate source of variation. Adequate variation is needed for plant breeding if there is a limitation in natural genetic resources. When the ionizing radiation has been known to cause chromosomal and genomic alternations, it is widely used for inducing mutagenesis. The electron beam as an ionizing radiation is the principal physical mutagens that induces mutation and effectively used in plant breeding. Since dose-response relationships of electron beam in plant species are rarely known, we investigated the seed germination rate and early seedling growth of irradiated seeds of creeping bentgrass (Agrostis palustris Huds., cv Penn-A1) with various electron beam irradiating conditions (1, 1.3, 2 MeV at both 0.03 mA and 0.06 mA with dose of 100 Gy (Gray) and 0.03, 1, 1.3, 2 MeV at 0.03 mA with dose of 200 Gy, respectively) using electron accelerator at Korea Atomic Energy Research Institute. The growth parameters in terms of shoot length, primary root length, and secondary root length showed similar response between 0.06 / 1 (mA / MeV) at 100 Gy and 0.03 / 0.3 (mA / MeV) at 200 Gy. Bentgrass seed germination was mainly affected by the intensity of irradiated dose (Gray). Germination rate was lowered as the irradiated dose increased. On the other hand, early seedling growth was mainly governed not by the dose of radiation but by voltage.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1609-1611
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• 2001

A large cross-section pulsed electron beam generator of cold cathode type has been developed for industrial applications, for example, waste water cleaning, flue gas cleaning, and pasteurization etc. The operational principle is based on the emission of secondary electrons from cold cathode when ions in the plasma hit the cathode, which are accelerated toward exit window by the gradient of an electric potential. The conventional electron beam generators need an electron scanning beam because the small cross section thermal electron emitter is used. The electron beam of large cross-section pulsed electron beam generator do not need to be scanned over target material because the beam cross section is large by 300$cm^2$. We have fabricated the large cross-sectional pulsed electron beam generator with the peak energy of 200keV and beam diameter of 200mm and obtained the large area electron beam in the air. The electron beam current has been investigated as a function of accelerating voltage, glow discharge current, helium pressure, distance from the exit window and radial distribution in front of the exit window.