• 한국진공학회:학술대회논문집
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• 한국진공학회 2008년도 제35회 하계학술대회 초록집
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• pp.225-225
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• 2008

• 한국진공학회:학술대회논문집
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• 한국진공학회 2007년도 제33회 하계학술대회 초록집
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• pp.142-142
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• 2007

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.811-813
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• 2003

We investigated the electrical properties of self-assembled (4,4'-Di(ethynylphenyl)-2'-nitro-1-thioacetylbenzene), which has been well known as a conducting molecule having possible application to molecular level negative differential resistance(NDR)[1]. Generally, the phenomenon of NDR can be characterized by the decreasing current with the increasing voltage[2]. To deposit the SAM layer onto gold electrode, we transfer the prefabricated nanopores into a 1mM self-assembly molecules in THF solution. Au(111) substrates were prepared by ion beam sputtering method of gold onto the silicon wafer. As a result, we measured the voltage-current properties and confirmed the negative differential resistance properties of self-assembled organic thin film and measured, using Scanning Tunneling Microscopy(STM).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.12-12
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• 2010

By using scanning tunneling microscopy/spectroscopy (STM/S), we can make images of various physical properties in nanometer-scale spatial resolutions. Here, I demonstrate imaging of two electron-correlated subjects; screening and superconductivity by STM/S. The electrostatic potential around a charge is described with the Coulomb potential. When the charge is located in a metal, the potential is modified because of the free electrons in the host. The potential modification, called screening, is one of the fundamental phenomena in the condensed matter physics. Using low-temperature STM we have developed a method to measure electrostatic potential in high spatial and energy resolutions, and observed the potential around external charges screened by two-dimensional surface electronic states. Characteristic potential decay and the Friedel oscillation were clearly observed around the charges [1]. Superconductivity of nano-size materials, whose dimensions are comparable with the coherence length, is quite different from their bulk. We investigated superconductivity of ultra-thin Pb islands by directly measuring the superconducting gaps using STM. The obtained tunneling spectra exhibit a variation of zero bias conductance (ZBC) with a magnetic field, and spatial mappings of ZBC revealed the vortex formation [2]. Size dependence of the vortex formation will be discussed at the presentation.

• Bulletin of the Korean Chemical Society
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• 제29권2호
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• pp.438-444
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• 2008

A self-assembled monolayer of 2,2'-bipyridine (22BPY) molecules on Au(111) underwent a structural phase transition when the polarity of a bias voltage was switched in scanning tunneling microscopy (STM) experiments. The nature of two bright spots representing each 22BPY molecule on Au(111) in the high-resolution STM images was identified by calculating the partial density plots for a monolayer of 22BPY molecules adsorbed on Au(111) using tight-binding electronic structure calculations. The stacking pattern of the chains of 22BPY molecules on Au(111) was explained by examining the intermolecular interactions between the 22BPY molecules based on first principles electronic structure calculations for a 22BPY dimer, (22BPY)2. The structural instability of the 22BPY molecule arrangement caused by a change in the bias voltage switch was investigated by estimating the adsorbate-surface interaction energy using a point-charge approximation for Au(111).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.76-76
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• 2013

Scanning Tunneling Microscopy는 개인용컴퓨터가 보급되고, 저잡음 아날로그 칩들을 구할 수 있으며, 압전세라믹 기술이 발달하기 시작한 1981년 스위스 IBM Zurich 연구소에서 H. Rohrer와 G. Binnig 박사에 의하여 발명되었다. 이 발명 7~8년 이전 미국 표준연구원의 R. Young 박사도 비슷한 시도를 하였지만, 이 때는 제어할 수 있는 컴퓨터가 없었고, 조절 회로의 잡음 레벨도 컸으며, 역학적 진동도 커서 목적을 달성할 수 없었다. STM의 발명 후 32년이 지난 지금, 조절용 컴퓨터의 발전은 물론, 조절용 역되먹임 회로 또한 digital signal processor나 FPGA를 사용하는 형태로 변화하여 전기적 잡음도 현저히 감소하였다 [1,2]. 동시에 측정 에너지 해상도를 개선하기 위하여 세계적으로 여러 그룹이 장치를 1 K 이하에서 작동할 수 있게 제작하였고, 0.3 K에서 작동하는 상업용 제품도 등장하였다. 이 결과 에너지 해상도는 30 meV 에서 2~3 ${\mu}eV$ 감소하였고, 온도변화에 따른 측정 위치의 변화도 피할 수 있게 되었다. 터널링 검침의 화학적 성분을 흡착과 같은 방법으로 조절하여, 공간 해상도는 물론 에너지 해상도도 더욱 줄일 수 있게 되었고, 스핀에 민감한 터널링 제어도 가능하게 되었다. 이제는 금속, 반도체, 초전도체는 물론 분자, 거대분자, 나노 크기의 양자점등도 측정이 가능하게 되었다. 분자진동 측정이 가능하며, 분자의 성분 분석이 가능하게 되었고, 스핀의 전도와 관련된 제반 문제들을 연구할 수 있게 되었다. 지금부터 10년 동안에는 포논의 측정과 전자와 포논 exciton 등이 관여된 다체계 현상, 이들의 동역학적 현상이 측정 가능하게 되었다. 핵자기 공명도 시도되고 있으며 화학적 구명 및 원자들 사이의 결합도 측정 가능하게 될 것이다. 이제 STM은 초고 진공에서 작동하는 Atomic Force Microscopy와 함께 지금까지 고체물리학 실험 장치가 만들어 내지 못하던 새로운 결과를 도출해 낼 것으로 기대한다.

• E2M - 전기 전자와 첨단 소재
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• 제9권6호
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• pp.616-625
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• 1996

본 고에서는 최첨단 주사형 마이크로프로브현미경의 최근동향에 대해 기술하고자 한다. SNOAM의 관찰분야에의 응용이라는 관점에서 광학소자, 반도체재료, 유기박막등의 미소영역에의 광학특성의 관찰이외에 생물분야에서는 형광표식한 시료의 형상상과 형광상의 대비에서 세포나 생체고분자의 기능 해명에도 이용 가능하다고 생각된다. 또한 광가공기술에의 응용이나 기억소자 기술에의 응용도 고려되어져 금후의 응용분야에의 발전이 기대된다. 다가오는 21세기 정보화사회에서는 분자.원자를 제어하는 기술이 중심기술이 될 것으로 확신되고 있다. 그러나 현재 우리주변 기술로서 분자. 원자를 단위로 하는 평가, 분석 기술은 거의 찾을 수 없다. 따라서 주사형 마이크로 프로브 현미경은 Nano-technology로서 장래 정보화사회에 중요한 평가.분석기술의 하나로서 정착될것으로 생각된다.

• Tribology and Lubricants
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• 제16권5호
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• pp.389-394
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• 2000

Scanning Probe Microscope (SPM) such as Scanning Tunneling Microscope (STM) and Atomic Force Microscope (AEM) was shown to be the powerful tool for nano-scale characterization of material surfaces. Using this technique, surface morphology of the cyclically deformed Cu or Cu-Al single crystal was observed. The surface became proportionately rough as the number of cycles increased, but after some number of cycles no further change was observed. Slip steps with the heights of 100 to 200 nm and the widths of 1000 to 2000 nm were prevailing at the stage. The slipped distance of one slip system at the surface was not uniform, and formation of the extrusions or intrusions was assumed to occur such place. By comparing the morphological change caused by crystallographic orientation, strain amplitude, number of cycles or stacking fault energy, some interesting results which help to clarify the basic mechanism of fatigue damage were obtained. Furthermore, applicability of the scanning tunneling microscopy to fatigue damage is discussed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.404-404
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• 2010

Despite much works have been done on the geometric structures of ripples, defects and edge atoms in a graphene device, there has been no report showing the direct correlation between the structures and the transport property. Unlike scanning tunneling microscopy or other electron microscopes, Scanning Gate Microscope (SGM) is a unique microscopic tool with which the local electronic structure and the transport property of a device can be measured simultaneously. We have performed a transport measurement in nanometer scale using a scanning gate microscope (SGM). We have found the nanoscopic pictures of electron and hole puddles and the role of graphene- device edges in the transport measurements. These experimental findings were successfully explained with a theoretical model.

• Journal of Electrical Engineering and Technology
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• 제1권3호
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• pp.366-370
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• 2006

We investigated the negative differential resistance (NDR) property of self-assembled 4,4-di(ethynylphenyl)-2'-nitro-l-(thioacetyl)benzene ('nitro-benzene'), which has been well known as a conducting molecule [1], Self-assembly monolayers (SAMs) were prepared on Au (111), which had been thermally deposited onto pre-treated $(H_2SO_4: H_2O_2=3:1)$ Si, The Au substrate was exposed to a 1mM solution of 1-dodecanethiol in ethanol for 24 hours to form a monolayer. After thorough rinsing of the sample, it was exposed to a $0.1{\mu}M$ solution of nitro-benzene in dimethylformamide (DMF) for 30 min and kept in the dark during immersion to avoid photo-oxidation. Following the assembly, the samples were removed from the solutions, rinsed thoroughly with methanol, acetone, and $CH_2Cl_2$, and finally blown dry with $N_2$. Under these conditions, we measured the electrical properties of SAMs using ultra high vacuum scanning tunneling microscopy (UHV-STM) and scanning tunneling spectroscopy (STS) [2]. As a result, we confirmed the properties of NDR in between the positive and negative region.