• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.06a
• /
• pp.264-264
• /
• 2010

Single-walled carbon nanotubes (SWCNTs) were grown on a Si wafer by using thermal chemical vapor deposition (t-CVD). We investigated the effect of the catalyst deposition rate on the types of CNTs grown on the substrate. In general, smaller islands of catalyst occur by agglomeration of a catalyst layer upon annealing as the catalyst layer becomes thinner, which results in the growth of CNTs with smaller diameters. For the same thickness of catalyst, a slower deposition rate will cause a more uniformly thin catalyst layer, which will be agglomerated during annealing, producing smaller catalyst islands. Thus, we can expect that the smaller-diameter CNTs will grow on the catalyst deposited with a lower rate even for the same thickness of catalyst. The 0.5-nm-thick Fe served as a catalyst, underneath which Al was coated as a catalyst support as well as a diffusion barrier on the Si substrate. The catalyst layers were. coated by using thermal evaporation. The deposition rates of the Al and Fe layers varied to be 90, 180 sec/nm and 70, 140 sec/nm, respectively. We prepared the four different combinations of the deposition rates of the AI and Fe layers. CNTs were synthesized for 10 min by flowing 60 sccm of Ar and 60 sccm of $H_2$ as a carrier gas and 20 sccm of $C_2H_2$ as a feedstock at 95 torr and $810^{\circ}C$. The substrates were subject to annealing for 20 sec for every case to form small catalyst islands prior to CNT growth. As-grown CNTs were characterized by using field emission scanning electron microscopy, high resolution transmission electron microscopy, Raman spectroscopy, UV-Vis NIR spectroscopy, and atomic force microscopy. The fast deposition of both the Al and Fe layers gave rise to the growth of thin multiwalled CNTs with the height of ${\sim}680\;{\mu}m$ for 10 min while the slow deposition caused the growth of ${\sim}800\;{\mu}m$ high SWCNTs. Several radial breathing mode (RBM) peaks in the Raman spectra were observed at the Raman shifts of $113.3{\sim}281.3\;cm^{-1}$, implying the presence of SWCNTs (or double-walled CNTs) with the tube diameters 2.07~0.83 nm. The Raman spectra of the as-grown SWCNTs showed very low G/D peak intensity ratios, indicating their low defect concentrations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.329-329
• /
• 2007

Photoconductive poly crystalline lead oxide coated on amorphous thin film transistor (TFT) arrays is the best candidate for direct digital x-ray detector for medical imaging. Thicker films with lessening density often show lower x-ray induced charge generation and collection becomes less efficient. In this work, we present a new methodology used for the high density deposition of PbO. We investigate the structural properties of the films using X-ray diffraction and electron microscopy experiments. The film coatings of approximately $200\;{\mu}m$ thickness were deposited on $2"{\times}2"$ conductive-coated glass substrates for measurements of dark current and x-ray sensitivity. The lead oxide (PbO) films of $200\;{\mu}m$ thickness were deposited on glass substrates using a wet coating process in room temperature. The influence of post-deposition annealing on the characteristics of the lead oxide films was investigated in detail. X-ray diffraction and scanning electron microscopy, and atomic force microscopy have been employed to obtain information on the morphology and crystallization of the films. Also we measured dark current, x-ray sensitivity and linearity for investigation of the electrical characteristics of films. It was found that the annealing conditions strongly affect the electrical properties of the films. The x-ray induced output charges of films annealed in oxygen gas increases dramatically with increasing annealing temperatures up to $500^{\circ}C$ but then drops for higher temperature anneals. Consequently, the more we increase the annealing temperatures, the better density and film quality of the lead oxide. Analysis of this data suggests that incorporation and decomposition reactions of oxygen can be controlled to change the detection properties of the lead oxide film significantly. Post-deposition thermal annealing is also used for densely film. The PbO films that are grown by new methodology exhibit good morphology of high density structure and provide less than $10\;pA/mm^2$ dark currents as they show saturation in gain (at approximate fields of $4\;V/{\mu}m$). The ability to operate at low voltage gives adequate dark currents for most applications and allows voltage electronics designs.

• Journal of dental hygiene science
• /
• v.16 no.1
• /
• pp.93-100
• /
• 2016

The purpose of this study was to compare the changes of retentive force in different stud attachment systems for implant retained overdenture. Two commercially available attachments with different retentive forces were investigated: Kerator (pink, blue, red) and O-ring (orange, red). Two implant fixtures were vertically embedded in base mountings. Five pairs of each attachment were evaluated. A universal testing machine was used to evaluate the retentive force of two attachments during wear simulation. Surface characteristics of each attachment system were evaluated with scanning electron microscopy. Five pairs of each attachment were evaluated. Kerator pink showed the highest initial retention. After 2,500 cycles of wear-simulation, Kerator pink noted the largest decrease in retention. According to results of surface analysis, Worn surfaces were obtained in matrices and patrices. Heavy wears were observed in matrices. After 2 year-wear simulation, most attachments exhibited retention loss. Attachments using different kind of material exhibited dissimilar surface alterations.

• Korean Journal of Materials Research
• /
• v.8 no.10
• /
• pp.890-897
• /
• 1998

The direct wafer bonding between n-InP(001) wafer and the ${Si}_3N_4$(200 nm) film grown on the InP wafer by PECVD method was investigated. The surface states of InP wafer and ${Si}_3N_4$/InP which strongly depend upon the direct wafer bonding strength between them when they are brought into contact, were characterized by the contact angle measurement technique and atomic force microscopy. When InP wafer was etched by $50{\%}$ HF, contact angle was $5^{\circ}$ and RMS roughness was $1.54{\AA}$. When ${Si}_3N_4$ was etched by ammonia solution, RMS roughness was $3.11{\AA}$. The considerable amount of initial bonding strength between InP wafer and ${Si}_3N_4$/InP was observed when the two wafer was contacted after the etching process by $50{\%}$ HF and ammonia solution respectively. The bonded specimen was heat treated in $H^2$ or $N^2$, ambient at the temperature of $580^{\circ}C$-$680^{\circ}C$ for lhr. The bonding state was confirmed by SAT(Scannig Acoustic Tomography). The bonding strength was measured by shear force measurement of ${Si}_3N_4$/InP to InP wafer increased up to the same level of PECVD interface. The direct wafer bonding interface and ${Si}_3N_4$/InP PECVD interface were chracterized by TEM and AES.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.30 no.1
• /
• pp.1-6
• /
• 2020

In this research, 50 nm thick AlN thin films were deposited on the patterned sapphire (0001) substrate by using HVPE (Hydride Vapor Phase Epitaxy) system and then epitaxial layer structure was grown by MOCVD (metal organic chemical vapor deposition). The surface morphology of the AlN buffer layer film was observed by SEM (scanning electron microscopy) and AFM (atomic force microscope), and then the crystal structure of GaN films of the epitaxial layer structure was investigated by HR-XRC (high resolution X-ray rocking curve). The XRD peak intensity of GaN thin film of epitaxial layer structure deposited on AlN buffer layer film and sapphire substrate was rather higher in case of that on PSS than normal sapphire substrate. In AFM surface image, the epitaxial layer structure formed on AlN buffer layer showed rather low pit density and less defect density. In the optical output power, the epitaxial layer structure formed on AlN buffer layer showed very high intensity compared to that of the epitaxial layer structure without AlN thin film.

• Membrane and Water Treatment
• /
• v.9 no.6
• /
• pp.473-480
• /
• 2018

The effect of three iron-based adsorbents pre-depositing on ultrafiltration membrane for humic acid (HA) removal and membrane fouling was investigated. The result showed that pre-depositing adsorbents on membrane could not only reduce membrane fouling but also enhance HA removal. The flux was related to the adsorbent dosage and the optimal dosage for pre-deposition was $35.0g/m^2$. The dissolved organic carbon (DOC) removal of HA was 38.3%, 67.3% and 41.1% respectively when pre-deposited $35.0g/m^2$ $FeO_xH_y$, $MnFe_2O_4$ and $Fe_3O_4$ on membrane. Different adsorption effect of adsorbents on HA contributed to increasing of the flux at different level. Zeta potential of three adsorbents all decreased after adsorbed HA. The adsorption capacity of the three adsorbents was $FeO_xH_y$ > $MnFe_2O_4$ > $Fe_3O_4$. Atomic Force Microscopy (AFM) measurement showed the thickness of pre-deposition layers formed by different adsorbents was different. The scanning electron microscope (SEM) detection showed the morphology and compactness of pre-deposition layers formed by different adsorbents was different.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.30 no.11
• /
• pp.683-687
• /
• 2017

We investigated the structure of an ultra-thin insulating board with low thermal conductivity along z-axis, which was based on the idea of void layers created during the glass infiltration process for the zero-shrinkage low-temperature co-fired ceramic (LTCC) technology. An alumina and four glass powders were chosen and prepared as green sheets by the tape casting method. After comparison of the four glass powders, bismuth glass was selected for the experiment. Since there is no notable reactivity between alumina and bismuth glass, alumina was selected as the supporting additive in glass layers. With 2.5 vol% of alumina powder, glass green sheets were prepared and stacked alternately with alumina green sheet to form the 'alumina/glass (including alumina additive)/alumina' structure. The stacked green sheets were sintered into an insulating substrate. Scanning electron microscopy revealed that the additive alumina formed supporting bridges in void layers. The depth and number of the stacking layers were varied to examine the insulating property. The lowest thermal conductivity obtained was 0.23 W/mK with a $500-{\mu}m-thick$ substrate.

• Journal of Korean Society for Atmospheric Environment
• /
• v.9 no.3
• /
• pp.191-199
• /
• 1993

This paper describes the results of a systematic study to determine the characteristics of particle generated from various types of asbestos containing material(ACM) and manmade fiber material(MMFM) during operations of cutting and grinding in laboratory and workplace. Tests were conducted with a specially designed glove box which allowed complete sampling of the generated asbestos fibers. Specificially, air measurements were made during ACM and MMFM installation in building. All personal air samples collected were identified by polarized light microscopy(PLM), X-ray diffraction(XRD) and scanning electron microscope with energy dispersive X-ray analysis(SEM/EDXA). Also, the samples were counted by phase contrast microscope(PCM) in order to compare the results with the permissible exposure standard for workplace. Results indicate that the characterisitcs of fibers found in the roofing sheet, the ceiling and the wall insulation boards were identical to those of asbestos, while the characteristics of fibers found in the ceiling insulation board, the floor tile and the sprayed on insulation products in parking area were identical to those of asbestos, while the characteristics of fibers found in the ceiling insulation board, the floor tile and the sprayed on insulation products in parking area were identical to those of rock wool. The concentrations of airborne fibers from various building materials cut by a grinder for 5 minutes were in the ranges of 0.09 $\sim$ 1.71 fibers/cc(f/cc). The highest concentration(1.71f/cc) was found during grinding the wall insulation board which also contains rock wool. The airborne fiber concentrations generated by installing at workplace were ranged from 0.0009 to 0.029 f/cc. All asbestos fibers from the ceiling insulation board at workplace were less than 20$\mu$m in length and more than 20% of them had the average aspect ratio greater than 20. Therefore, for the purpose of decreasing asbestos and man-made fiber concentrations at the workplace, the ceiling and wall board should use strong binding material to increase the binding force with fiber. Also, the permissible exposure standard for workplace(2.0f/cc) in Korea should be constituted below the maximum avaiable concentration measured at glove box.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2001.06a
• /
• pp.14-14
• /
• 2001

Nitride films such as TiN, CrN etc. deposited on glass by PVD processes have been developed for many industrial applications. These nitride films deposited on glass were widely used for not only decorative and optical coatings but also wear and corrosion resistance coatings employed as dies and molds made of glass for the example of lens forming molds. However, the major problem of nitride coatings on glass by PVD process is non-uniform film owing to pin-hole and micro crack. It is estimated that nonuniform coating is influenced by a different surface energy between metal nitrides and glass due to binding states. In this work, therefore, for the evaluation of nucleation and growth mechanism of nitride films on glass TiN and CrN film were synthesized on glass with various nitrogen partial pressure by unbalanced magnetron sputtering. Prior to deposition, for the examination of relationship between surface energy and film microstructure plasma pre-treatment process was carried out with various argon to hydrogen flow rate and substrate bias voltage, duty cycle and frequency by using pulsed DC power supply. Surface energy owing to the different plasma pre-treatment was calculated by the measurement of wetting angle and surface conditions of glass were investigated by X-ray Photoelectron Spectroscopy(XPS) and Atomic Force Microscope(AFM). The microstructure change of nitride films on glass with increase of film thickness were analyzed by X-Ray Diffraction(XRD) and Scanning Electron Microscopy(SEM).

• Macromolecular Research
• /
• v.13 no.2
• /
• pp.135-140
• /
• 2005

Poly(vinyl alcohol) (PVA) membranes crosslinked with poly(acrylic acid-co-maleic acid) (PAM) were prepared to investigate the effect of aging on their morphology by swelling them for up to 7 days. PAM was used both as a crosslinking agent and as a donor of the hydrophilic-COOH group. A $30 wt\%$ weight loss of the dry membrane was observed in the swelling test after 6 days. The surface of the membrane was dramatically changed after the swelling test. The surface roughness of the PVA/PAM membrane was increased, as determined by atomic force microscopy (AFM). The swelling loosened the polymer structure, due to the release of the unreacted polymer and the decomposition of the ester bond, thereby resulting in an increase in the free volume capable of containing water molecules. The water molecules present in the form of free water were determined by differential scanning calorimetry (DSC). The fraction of free water increased with increasing swelling time. The swelling of the membrane may provide space for the transport of protons and increase the mobility of the protonic charge carriers. The proton conductivity of the membranes measured at T= 30 and $50^{\circ}C$ was in the range of $10^{-3} to 10^{-2} S/cm$, and slightly increased with increasing swelling time and temperature.