• 한국표면공학회지
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• 제51권3호
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• pp.164-171
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• 2018

In this study, we have fabricated pure titanium (Ti)/hydroxyapatite (HA) double layer coating on medical grade PEEK from magnetron sputtering system, an investigation was performed whether the surface can be had more improve bio-active for orthopedi/dental applications than that of non-coated one. Pure Ti and HA coating layer were obtained by a radio-frequency and direct current power magnetron sputtering system. The microstructures surface, mechanical properties and wettability of the pure Ti/HA double layer deposited on the PEEK were analyzed by scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), nano-indentation, and contact angle test. According to the EDS and XRD results, the composition and crystal structure of pure Ti and HA coated surface were verified. The elastic modulus and hardness value were increased by pure Ti and HA coating, and the pure Ti/HA double layer coating surface has the highest value. The contact angle showed higher value for pure Ti/HA double layered coating specimens than that of non-coated (PEEK) surface.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 추계학술대회 논문집 전기물성,응용부문
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• pp.212-214
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• 2004

In this study, we fabricated the organic thin film by self-assembly method by using nitro-group and methoxy-group organic molecule. Also, we selected the organic single molecule in organic thin film and measured current-voltage characteristics by using scanning tunneling microscopy. The Organic molecules that use in an experiment is 4,4'-(diethynylphenyl)-2'-nitro-1-benzen ethiol and 4-[2,5-dimethoxy-4-ph enylethynylphenyl]ethynylphenylethanthiol. 4,4'-(dimet hynylphenyl)-2'-nitro-1-benzenethiol is applied widely in molecular electronic device and 4-[2,5-dime thoxy-4-phenylethynylphenyl]ethynylphenylethanthiol composed in Korea Research Institute of Chemical Technology. To be confirmed the formation of the self-assembled monolayers, we observed the real time frequency shift of the QCM and investigated surface of the self-assembled monolayers the using STM. With this, we measured current to the organic single molecule, in condition of the air state. As a result, we confirmed in constant voltage that properties of negative differential resistance. Using properties of negative differential resistance to get from this study, application is expected to be molecular switching device, memory device and logic device.

• 한국재료학회지
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• 제9권6호
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• pp.599-603
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• 1999

AIN과 저온 GaN 완충충율 이용하여 Si 기판 위의 후막 GaN의 성장특성을 조샤하였다. Si과 GaN의 격자부정합도와 열팽창계수의 차이를 줄이기 위해 AIN과 저온 GaN를 완충충으로 사용하였다. AIN은 RF sputter를 이용하여 중착온도와 증착시간 및 RF power에 따른 표면 거칠기를 AFM으로 조사하여 최척조건을 확립하여 사용하였다. 또한 저온에서 GaN를 성장시켜 이를 완충충으로 이용하여 후막 GaN의 성장시 미치는 영향을 살펴보았다. 성장온도와 V/III 비율이 후막 성장시 표면특성과 결정성 및 성장속도에 미치는 영향을 조사하였다. 후막 GaN의 표연특성 및 막의 두께는 SEM과 $\alpha-step$을 이용하여 측정하였으며 결정성은 X-ray Diffractometer를 이용하여 조사하였다.

• 한국표면공학회지
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• 제52권3호
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• pp.163-170
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• 2019

Durability of instrument is one of the most important factor to ensure accurate treatment and decrease failure for the orthopedic surgical operation. Normally, a set-screw driver tip has been processed with hard coating for their higher durability and wear resistance. And several surface modification methods were obtained such as titanium nitride (TiN) coating, diamond like carbon coating, other nitriding, and etc. In this study, we have surface modified on set-screw driver tip with TiN and DLC, investigated whether the TiN and DLC coatings affect the mechanical properties and durability of the set-screw driver tip in the pedicle screw system. The surface morphologies were observed with scanning-electron microscopy (SEM), and the static/dynamic torsional properties were investigated with universal testing machine based on ASTM F543. Coating thickness of each coatings were commonly around $1^{\circ}C$. Static torsional stiffness, and ultimate torque values for DLC and TiN coated samples were significantly higher than those of non-coated sample by the pared T-test. Surface morphology of after the dynamic torsional test was more clean with less scratch or friction traces from DLC coating than that of TiN coating and non-coated sample.

• International Journal of Computer Science & Network Security
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• 제23권4호
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• pp.172-178
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• 2023

When the mobile device moves from the coverage of one access point to the radio coverage of another access point it needs to maintain its connection with the current access point before it successfully discovers the new access point, this process is known as handoff. During handoff the acceptable delay a voice over IP application can bear is of 50ms whereas the delay on medium access control layer is high enough that goes up to 350-500ms. This research provides a suitable methodology on medium access control layer of the IEEE 802.11 network. The medium access control layer comprises of three phases, namely discovery, reauthentication and re-association. The discovery phase on medium access control layer takes up to 90% of the total handoff latency. The objective is to effectively reduce the delay for discovery phase to ensure a seamless handoff. The research proposes a scheme that reduces the handoff latency effectively by scanning channels prior to the actual handoff process starts and scans only the neighboring access points. Further, the proposed scheme enables the mobile device to scan first the channel on which it is currently operating so that the mobile device has to perform minimum number of channel switches. The results show that the mobile device finds out the new potential access point prior to the handoff execution hence the delay during discovery of a new access point is minimized effectively.

• Applied Microscopy
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• 제45권1호
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• pp.1-8
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• 2015

We have developed a new HD-2700 (Hitachi High-Technologies Corp., Japan) scanning transmission electron microscope (STEM) that includes an automatic aberration correction function, and a large-solid-angle energy-dispersive X-ray spectroscopy detector that enables high-resolution and sensitive analysis. For observation with atomic resolution, using spherical-aberration-corrected STEM, in order that satisfactory performance of the device can be achieved readily, and within a short time, irrespective of the operator's skill level, a spherical-aberration-correction device with an automatic aberration-correction function was developed. This automatic aberration-correction function carries out the entire correction-related process (aberration measurement, selection and correction) automatically, with automatic selection of the aberrations that require correction, and automatic measurement of the appropriate corrections.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.32-32
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• 2009

Silicon carbide (SiC) is a wide-bandgap semiconductor that has materials properties necessary for the high-power, high-frequency, high-temperature, and radiation-hard condition applications, where silicon devices cannot perform. SiC is also the only compound semiconductor material. on which a silicon oxide layer can be thermally grown, and therefore may fabrication processes used in Si-based technology can be adapted to SiC. So far, atomic force microscopy (AFM) has been extensively used to study the surface charges, dielectric constants and electrical potential distribution as well as topography in silicon-based device structures, whereas it has rarely been applied to SiC-based structures. In this work, we investigated that the local oxide growth on SiC under various conditions and demonstrated that an increased (up to ~100 nN) tip loading force (LF) on highly-doped SiC can lead a direct oxide growth (up to few tens of nm) on 4H-SiC. In addition, the surface potential and topography distributions of nano-scale patterned structures on SiC were measured at a nanometer-scale resolution using a scanning kelvin probe force microscopy (SKPM) with a non-contact mode AFM. The measured results were calibrated using a Pt-coated tip. It is assumed that the atomically resolved surface potential difference does not originate from the intrinsic work function of the materials but reflects the local electron density on the surface. It was found that the work function of the nano-scale patterned on SiC was higher than that of original SiC surface. The results confirm the concept of the work function and the barrier heights of oxide structures/SiC structures.

• 대한기계학회논문집A
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• 제41권5호
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• pp.401-407
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• 2017

본 연구에서는 레이저 스캐닝 및 단일 주파수 정상파 가진과 파수 분석을 통해 구조물의 손상을 탐지하는 기법을 개발하였다. 구조물에 부착된 압전소자를 통해 단일 주파수로 가진하고, 이때 발생한 구조물의 정상상태 응답을 레이저 도플러 속도계와 거울 방향조절 장치를 통해 측정하였다. 구조물의 결함을 탐지하기 위해 정상상태 응답에서 파수 필터링을 이용한 손상 탐지 기법을 개발 및 적용하였다. 부식결함이 발생한 알루미늄 평판과 층간 분리가 발생한 복합재료 구조물에 대한 손상 탐지를 수행하여 손상의 위치와 크기를 정확히 파악할 수 있었다.

• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2017년도 제48회 춘계학술대회논문집
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• pp.547-553
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• 2017

Differential Scanning Calorimetry(DSC)를 이용하여 파이로점화장치에 사용되는 세 가지 고에너지 물질의 열분석 실험을 수행하였다. DSC 실험 데이터를 이용하여 고에너지 물질의 반응속도식을 추출해내는 이론적 방법을 제안하고 반응속도식 추출을 수행하였다. DSC 실험 결과는 Friedman 등전환법으로 분석되었다. 질량분율에 따른 활성화에너지와 빈도인자를 추출해 내어 반응속도식을 완성하였다. 추출된 반응속도식은 고에너지 물질의 화학반응과정을 몇 단계의 주요단계로 가정하는 형태가 아닌 전체 화학 반응 과정을 나타내는 형태를 갖는다. 이는 기존의 열분석 실험을 통해 추출되는 화학반응속도식 형태에 비해 이론적 측면과 정확성 측면에서 상당한 장점을 갖는다. 도출된 반응속도식을 이용하여 실제 추진기관에 운용되는 세 가지 고에너지 물질의 성능변화를 20년에 대하여 예측하였다.

• Bulletin of the Korean Chemical Society
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• 제34권6호
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• pp.1779-1782
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• 2013

N-type ZnO nanorods were grown on p-type porous silicon using a chemical bath deposition (CBD) method (p-n diode). The structure and geometry of the device were examined by field-emission scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD) while the optoelectronic properties were investigated by UV/Vis absorption spectrometry as well as photoluminescence and electroluminescence measurements. The field emission (FE) properties of the device were also measured and its turn-on field and current at 6 $V/{\mu}m$ were determined. In principle, the growth of ZnO nanorods on porous siicon for optoelectronic applications is possible.