• Proceedings of the Materials Research Society of Korea Conference
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• 2000.11a
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• pp.145-145
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• 2000

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.10
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• pp.918-922
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• 2006

Chalcogenide Phase change memory has the high performance necessary for next-generation memory, because it is a nonvolatile memory with high programming speed, low programming voltage, high sensing margin, low power consumption and long cycle duration. To minimize the power consumption and the program voltage, the new composition material which shows the better phase-change properties than conventional $Ge_2Sb_2Te_5$ device has to be needed by accurate material engineering. In the present work, we investigate the basic thermal and the electrical properties due to phase-change compared with chalcogenide-based new composition $Ge_1Se_1Te_2$ material thin film and convetional $Ge_2Sb_2Te_5$ PRAM thin film. The fabricated new composition $Ge_1Se_1Te_2$ thin film exhibited a successful switching between an amorphous and a crystalline phase by applying a 950 ns -6.2 V set pulse and a 90 ns -8.2 V reset pulse. It is expected that the new composition $Ge_1Se_1Te_2$ material thin film device will be possible to applicable to overcome the Set/Reset problem for the nonvolatile memory device element of PRAM instead of conventional $Ge_2Sb_2Te_5$ device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.1
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• pp.88-93
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• 2024

To evaluate the possibility as a multi-level memory medium for the Ge₂Sb₂Te₅/TiN/W-doped Ge₂Sb₂Te₅ cell structure, the crystallization rate and stabilization characteristics according to voltage (V)- and current (I)- pulse sweeping were investigated. In the cell structures prepared by a magnetron sputtering system on a p-type Si (100) substrate, the Ge₂Sb₂Te₅ and W-doped Ge₂Sb₂Te₅ thin films were separated by a barrier metal, TiN, and the individual thicknesses were varied, but the total thickness was fixed at 200 nm. All cell structures exhibited relatively stable multi-level states of high-middle-low resistance (HR-MR-LR), which guarantee the reliability of the multilevel phase-change random access memory (PRAM). The amorphousto-multilevel crystallization rate was evaluated from a graph of resistance (R) vs. pulse duration (T) obtained by the nanoscaled pulse sweeping at a fixed applied voltage (12 V). For all structures, the phase-change rates of HR→MR and MR→LR were estimated to be approximately t<20 ns and t<40 ns, respectively, and the states were relatively stable. We believe that the doublestack structure of an appropriate Ge-Sb-Te film separated by barrier metal (TiN) can be optimized for high-speed and stable multilevel PRAM.

• Korean Journal of Crystallography
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• v.9 no.2
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• pp.153-158
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• 1998

백금족 원소의 광화 마그마 내에서의 지화학적·결정학적 거동을 밝히기 위하여 백금, 안티모니, 테루리움계를 선택하여 800℃에서 안정한 광물 또는 화합물의 종류와 이들의 공생군, 원소간의 고용한계 등에 대해 실험적으로 연구하였다. 순도가 높은 각 원소를 초기 반응 물질로 하였으며, 고순도 석영관을 용기로 사용하였으며, 화학 반응 생성물은 반사현미경의, X선회절분석기, 전자현미분석기 등을 사용하여 분석하였다. 800℃에서 안정한 화합물로는, 백금(Pt), PtSb(stumpflite), PtSb2(geversite), PtTe, Pt3Te4, Pt2Te3, PtTe2(moncheite)이다. 이 연구 결과로부터 800℃에서의 상평형다이아그램을 정립하였다. 이 온도에서는 stumpflite와 geversite 및 moncheite가 현저히 치환고용체를 이루는데 그 한계는 각각 10 at.% Te, 28.5 at.% Te, 19.5 at.% Sb이다. 특히 원소광물인 백금과 stumpflite 및 moncheite는 화학성분은 이들 광물을 포함하고 있는 광상의 생성온도를 제시해 주는 지질온도계 역할을 할 수 있다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.52-52
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• 2009

To date, chalcogenide alloy such as $Ge_2Sb_2Te_5$(GST) have not only been rigorously studied for use in Phase Change Random Access Memory(PRAM) applications, but also temperature gap to make different states is not enough to apply to device between amorphous and crystalline state. In this study, we have investigated a new system of phase change media based on the In-Sb-Te(IST) ternary alloys for PRAM. IST chalcogenide thin films were prepared in trench structure (aspect ratio 5:1 of length=500nm, width=100nm) using Tri methyl Indium $(In(CH_3)_4$), $Sb(iPr)_3$ $(Sb(C_3H_7)_3)$ and $Te(iPr)_2(Te(C_3H_7)_2)$ precursors. MOCVD process is very powerful system to deposit in ultra integrated device like 100nm scaled trench structure. And IST materials for PRAM can be grown at low deposition temperature below $200^{\circ}C$ in comparison with GST materials. Although Melting temperature of 1ST materials was $\sim 630^{\circ}C$ like GST, Crystalline temperature of them was ~$290^{\circ}C$; one of GST were $130^{\circ}C$. In-Sb-Te materials will be good candidate materials for PRAM applications. And MOCVD system is powerful for applying ultra scale integration cell.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.9-14
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• 1996

The dependence of microstructural and optical properties of Ag-In-Sb-Te thin films on annealing heat-treatments was studied. It was found from the present work that the increase of reflectance after annealing heat-treatment is related with phase change of Ag-In-Sb-Te thin film from amorphous state to crystalline phases which involve Sb crystalline phase and AgInTe$_2$ stoichiometric phase. On the other hand, the reflectance is decreased after high temperature annealing (above 450$^{\circ}C$), due to the morphology .mange of film surface. For the purpose of practical application(erasable optical disk), we fabricated quadrilayered Ag-In-Sb-Te alloy disk, and annealed it with continuous laser beam. As result of this laser\ulcorner annealing treatment, we found that the increment of reflectance is 9.3% at 780nm wavelength. It might be considered that Ag-In-Sb-Te alloy optical disk is the big promising candidate for the erasable optical memory medium.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.186-186
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• 2013

Nitrogen doped Ge-Sb-Te (N-GST) thin films for phase change random access memory (PRAM) applications were investigated by synchrotron-radiation-based x-ray photoelectron spectroscopy and absorption spectroscopy. Nitrogen doping in GST resulted in more favorable N atoms' bonding with Ge atoms rather than with Sb and Te atoms [1,2], which explains the higher phase change transition temperature than that of undoped Ge-Sb-Te thin film. Surprisingly, it was noticed that N atoms also existed in the form of molecular nitrogen, $N_2$, which is detrimental to the stability of the GST performance [3]. N-doped GST experimental features were also supported by ab-initio molecular dynamic calculations [2]. References [1] M.-C. Jung, Y. M. Lee, H.-D. Kim, M. G. Kim, and H. J. Shin, K. H. Kim, S. A. Song, H. S. Jeong, C. H. Ko, and M. Han, "Ge nitride formation in N-doped amorphous Ge2Sb2Te5", Appl. Phys. Lett. 91, 083514 (2007). [2] Zhimei Sun, Jian Zhou, Hyun-Joon Shin, Andreas Blomqvist, and Rajeev Ahuja, "Stable nitride complex and molecular nitrogen in N doped amorphous Ge2Sb2Te5", Appl. Phys. Lett. 93, 241908 (2008). [3] Kihong Kim, Ju-Chul Park, Jae-Gwan Chung, and Se Ahn Song, Min-Cherl Jung, Young Mi Lee, Hyun-Joon Shin, Bongjin Kuh, Yongho Ha, Jin-Seo Noh, "Observation of molecular nitrogen in N-doped Ge2Sb2Te5", Appl. Phys. Lett. 89, 243520 (2006).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.115-115
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• 2007

PRAM (Phase Change Random Access Memory)은 상변화 물질의 비저항 차이를 이용한 메모리 소자로 차세대 비휘발성 메모리로 주목받고 있다. 현재 상변화 물질로 사용되고 있는 $Ge_2Sb_2Te_5$ 박막은 결정질 상태에서 저항이 낮아 RESET 동작에서 많은 전력이 소비되고 메모리의 고집적의 어려움이 있다. 이러한 문제를 해결하기 위해 상변화 물질의 개선과 소자 구조의 개선 등의 새로운 접근이 시도되고 있다. 본 연구에서는 $Ge_2Sb_2Te_5$ 박막의 전기적 특성을 개선하기 위해서 이종 원소인 질소를 첨가한 N-doped $Ge_2Sb_2Te_5$ 박막에 대한 특성을 살펴 보았다. $SiO_2$/Si 기판 위에 100 nm 두께의 박막을 D.C. magnetron sputter 방법으로 증착하여, 질소 분위기 $100^{\circ}C{\sim}300^{\circ}C$온도 구간에서 열처리하였다. 열처리에 따른 박막 특성을 관찰하기 위해 면저항 측정, XRD, TEM 분석을 통해 박막 특성을 관찰하였다. 면저항 측정과 XRD peak 분석을 통해 $Ge_2Sb_2Te_5$ 시스템에 비하여 N-doped $Ge_2Sb_2Te_5$ 시스템의 결정화 온도가 상승하였음을 확인하였다. 면저항은 첨가된 질소의 조성이 증가할수록 증가하였고, FCC 상에서 HCP 상으로의 상변화 온도 역시 증가하였다. 첨가된 질소가 $Ge_2Sb_2Te_5$, 박막의 결정 성장을 억제하였고, 상대적으로 높은 저항을 가지고 안정한 FCC상을 고온 열처리 이후에도 유지하였다. 질소 첨가를 이용한 상변화 물질의 열안정성 향상과 저소비전력 구동을 통해 향후 고집적 상변화 메모리에의 적용이 가능하다.

• Journal of the Korean Ceramic Society
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• v.42 no.5 s.276
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• pp.326-332
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• 2005

Phase transformation effects on mechanical properties of $Ge_2Sb_2Te_5$, which is a promising candidate material for Phase Change Random Access Memory (PRAM), were studied. $Ge_2Sb_2Te_5$ thin films, which was thermally annealed with different conditions, were analyzed using XRD, AFM, 4-point probe method and reflectance measurement. As the temperature and the dwelling time increased, crystallity and grain size increased, which enhanced elastic modulus and hardness. Furthermore, N2 doping, which was used for better electrical properties, was proved to decrease elastic modulus and hardness of $Ge_2Sb_2Te_5$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.84-89
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• 1996

The nucleation and growth of microporosities was observed during the course of annealing treatment of sputter-deposited AgInSbTe thin films. There was a close correlation between the density of microporosity and the sputtering gas pressure in annealed thin films. The void density for a given composition decreased with sputtering gas pressure. It was shown from the present study that the number of porosities decreased while the average porosity size increased as the annealing temperature and holding time increased. The mechanism of porosity formation in the sputter-deposited AgInSbTe thin flus containing Ar-impurity trapped from the Ar-plasma is discussed in the present article.