• Title/Summary/Keyword: Sb-Te

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A Study on the Diffusion Barrier at the p/n Junctions of $Bi_{0.5}Sb_{1.5}Te_3/Bi_2Te_{2.4}Se_{0.6} p/n$ Thermoelectric Thin Films (열전 박막 $Bi_{0.5}Sb_{1.5}Te_3/Bi_2Te_{2.4}Se_{0.6} p/n$ 접합에서의 확산 장벽에 관한 연구)

  • Kim, Il-Ho;Lee, Dong-Hui
    • Korean Journal of Materials Research
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    • v.6 no.7
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    • pp.678-683
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    • 1996

  • In the fabrication processes of thin film thermoelectrics, a subsequent annealing treatment is inevitable to reduce the defects and residual stresses introduced during the film growth, and to make the uniform carrier concentration of the film. However, the diffusion-induced atomic redistribution and the broadening of p/n junction region are expected to affect the thermoelectric properties of thin film modules. The present study intends to investigate the diffusion at the p/n junctions of thermoelectric thin films and to relate it to the property changes. The film junctions of p-type(Bi0.5Sb1.5Te3)and n-type(Bi2Te2.4Se0.6)were prepared by the flash evaporation method. Aluminum thin layer was employed as a diffusion barrier between p-and n-type films of the junction. This was found to be an effective barrier by showing a negligible diffusion into both type films. After annealing treatment, the thermoelectric properties of p/n couples with aluminum barrier layer were accordingly retained their properties without any deterioration.

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The Optical Properties of Te-Ge-Sb Thin Films with Crystallization (Te-Ge-Sb계 박막의 결정화에 따른 광학적 특성)

  • Chung, Hong-Bay;Im, Sook;Lee, Young-Jong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1996.11a
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    • pp.143-146
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    • 1996

  • In (GeTe)$_{100-x}$(Sb$_2$Te$_3$)$_{x}$(x=33.5, 50, 66.5, 80 at.%) thin films, the optical properties of amorphous and crystalline thin film, XRD were studied. Also, the application for the phase change optical recording materials with the high stability and rapid erasing ability were studied. In the (GeTe)$_{100-x}$(Sb$_2$Te$_{3}$)$_{x}$ the transmittance was decreased with the increase of x. In all thin films, the transmittance was decreased and the reflectance was increased by annealing and particularly, the reflectance before and after annealing showed the large reflectance ratio. The XRD pattern, it was confined that these change of optical properties was due to the crystallization of amorphous thin films. The reflectance change was investigated using isothermal annealing condition.ion.ion.

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