• Title/Summary/Keyword: Sb-Te

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Phase Equilibria of the System Pd-Sb-Te and Its Geological Implications (팔라듐-안티몬-테루르 계(系)의 상평형(相平衡)과 지질학적(地質學的) 의의(意義))

  • Kim, Won-Sa;Chao, George Y.
    • Economic and Environmental Geology
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    • v.26 no.3
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    • pp.327-335
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    • 1993
  • Phase relations in the system Pd-Sb-Te were investigated at $1000^{\circ}$, $800^{\circ}$, and $600^{\circ}C$, using the sealed-capsule technique; the quenched products were studied by reflected light microscopy, X-ray diffraction, and electron microprobe analysis. At $1000^{\circ}C$, the solid phases Pd, $Pd_{20}Sb_7$, $Pd_8Sb_3$, $Pd_{31}Sb_{12}$, and $Pd_5Sb_2$ are stable with a liquid phase that occupies most of the isothermal diagram. Additional solid phases at $800^{\circ}C$ are $Pd_5Sb_3$, PdSb, $Pd_8Te_3$, $Pd_7Te_3$, and a continuous $Pd_{20}Te_7-Pd_{20}Sb_7$ solid solution becomes stable. At $600^{\circ}$, $PdSb_2$, $Pd_{17}Te_4$, $Pd_9Te_4$, PdTe, $PdTe_2$, $Sb_2Te_3$, and Sb and continuous PdSb-PdTe and $PdTe-PdTe_2$ solid solutions are stable. All the solid phases exhibit solid solution, mainly by substitution between Sb and Te to an extent that varies with temperature of formation. The maximum substitution (at.%) of Te for Sb in the Pd-Sb phases is: 44.3 in $Pd_8Sb_3$, 52.0 in $Pd_{31}Sb_{12}$, 46.2 in $Pd_5Sb_2$ at $800^{\circ}C$; 15.3 in $Pd_5Sb_3$, 68.3 in $PdSb_2$ at $600^{\circ}C$. The maximum substitution (at.%) of Sb for Te in the Pd-Te phases is 34.5 in $Pd_5Sb_3$ at $800^{\circ}C$, and 41.6 in $Pd_7Te_3$, 5.2 in $Pd_{17}T_4$, 12.4 in $Pd_9Te_4$, and 19.1 in $PdTe_2$ at $600^{\circ}C$. Physical properties and X-ray data of the synthetic $Pd_9Te_4$, PdTe, $PdTe_2$, $Pd_8Sb_3$, PdSb, and $Sb_2Te_3$ correspond very well with those of telluropalladinite, kotulskite, merenskyite, mertieite II, sudburyite, and tellurantimony, respectively. Because X-ray powder diffraction data consistently reveal a 310 peak ($2.035{\AA}$), the $PdSb_2$ phase is most probably of cubic structure with space group $P2_13$. The X-ray powder pattern of a phase with PdSbTe composition, synthesized at $600^{\circ}C$, compares well with that of testibipalladite. Therefore, testibiopalladite may be a member of the $PdSb_2-Pd(Sb_{0.32}Te_{0.68})$ solid solution series which is cubic and $P2_13$ in symmetry. Thus the ideal fonnula for testibiopalladite, presently PdSbTe, must be revised to PdTe(Sb, Te). Borovskite($pd_3SbTe_4$) has not been found in the synthetic system in the temperature range $1000^{\circ}-600^{\circ}C$.

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Ge-Sb-Te 삼성 분계에서의 열처리 온도에 따른 구성 원소의 상호확산 특성

  • Bang, Gi-Su;Lee, Seung-Yun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.218.1-218.1
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    • 2013
  • GeSbTe 삼원계 칼코겐화물 합금은 광디스크 및 상변화 메모리에서 활성물질로 사용되는 대표적인 재료이다. GeSbTe 합금은 결정질 상과 비정질 상의 두 종류의 상을 갖는데 그 상에 따라 반사율 및 전기저항이 서로 다르기 때문에 활성물질로서 작용한다. GeSbTe 합금 구성원소의 일부를 포함하는 두 종류의 물질로 접합을 형성하고 열처리 공정을 수행함으로써 GeSbTe 합금을 국부적으로 생성하는 방법이 최근에 보고되었다. 이러한 방법을 상변화 메모리 소자 제조에 이용하면 GeSbTe 합금을 제한된 영역에 나노 스케일로 만드는 것이 가능해져서 GeSbTe 합금의 상변화를 유도하는데 필요한 프로그래밍 전류를 낮추는 효과를 얻을 수 있다. 상변화 메모리 소자 내에서의 GeSbTe 합금의 두께 또는 크기는 상변화 메모리 소자의 동작 특성을 좌우하는 중요한 파라미터이며 이것은 열처리 공정 조건에 따라 결정되므로 열처리 공정 조건에 따라 GeSbTe 합금이 생성되는 양상이 어떻게 변화하는지를 밝힐 필요가 있다. 따라서 본 연구에서는 다양한 열처리 온도 조건에서 Ge-Sb-Te 삼성 분계에서의 구성 원소들의 상호확산 거동을 조사하였다. 순수한 Ge 박막과 조성이 다른 SbTe 박막의 접합을 형성하고 773K까지의 온도 범위에서 열처리를 실시하였다. Auger 수직 분석을 이용하여 Ge, Sb, 및 Te 원소의 깊이 방향의 확산 정도를 조사하였으며 그 결과로서 열처리 온도가 증가함에 따라 상호확산 정도가 심해지고 Te 원소가 상호확산에 있어서 중요한 역할을 한다는 사실을 확인하였다.

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Crystallization behavior and thermoelectric properties of p-type $(Bi_{1-X}Sb_X)_2Te_3$ thin films prepared by magnerron sputtering (마그네트론 스퍼터링법으로 제조한 P형 $(Bi_{1-X}Sb_X)_2Te_3$ 박막의 결정성과 열전특성)

  • 연대중;오태성
    • Journal of the Korean Vacuum Society
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    • v.9 no.4
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    • pp.353-359
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    • 2000
  • $(Bi_{0.15}Sb_{0.85})_2Te_3$ and $(Bi_{1-x}Sb_x)_2Te_3$ thermoelectric thin films were prepared by magnetron sputtering process, and their thermoelectric characteristics were investigated with variation of the sputtering condition and the $Sb_2Te_3$ content. The $(Bi_{0.15}Sb_{0.85})_2Te_3$ film, deposited by DC sputtering at $300^{\circ}C$ with rotating the Corning glass substrate at 10 rpm, was fully crystallized to $(Bi,Sb)_2Te_3$ phase with c-axis preferred orientation. This $(Bi_{0.15}Sb_{0.85})_2Te_3$ film exhibited the Seebeck coefficient of 185 $\mu$V/K which was higher than the values of other $(Bi_{0.15}Sb_{0.85})_2Te_3$ films fabricated with different sputtering conditions. With increasing the $Sb_2Te_3$ content, the Seebeck coefficient and electrical resistivity of p-type $(Bi_{1-x}Sb_x)_2Te_3$ (0.77$\leq$x$\leq$1.0) film were lowered. Among p-type $(Bi_{1-x}Sb_x)_2Te_3$ films, a maximum power factor of $0.79{\times}10^{-3}W/K^2-m$ was obtained at (Bi_{0.05}Sb_{0.95})_2Te_3$ composition..

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Fabrication Process of the Thermoelectric Module Composed of the Bi-Te and the Bi-Sb-Te Nanowires (Bi-Te 및 Bi-Sb-Te 나노와이어로 구성된 열전소자의 형성공정)

  • Kim, Min-Young;Lim, Su-Kyum;Oh, Tae-Sung
    • Journal of the Microelectronics and Packaging Society
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    • v.15 no.4
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    • pp.41-49
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    • 2008
  • Thermoelectric properties of the n-type Bi-Te and the p-type Bi-Sb-Te films were measured and the growth behaviors of the electrodeposited Bi-Te and Bi-Sb-Te nanowires were characterized. Filling ratios of 81% and 77% were obtained for electrodeposition of the Bi-Te and the Bi-Sb-Te nanowires, respectively, into the nano pores of 200 nm-diameter of an alumina template. A thermoelectric module, composed of the Bi-Te nanowires and the Bi-Sb-Te nanowires was processed by electrodeposition, and a resistance value of $15{\Omega}$ was measured between the Ni electrodes formed on the Bi-Te nanowires and the Bi-Sb-Te nanowires of the module.

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Behavior of Pt, Sb, Te during Crystallizaion of Ore Magma (I) (광화마그마내에서의 백금, 안티모니, 테루리움 거동에 관한 연구(I))

  • 김원사
    • Journal of the Mineralogical Society of Korea
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    • v.9 no.2
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    • pp.93-101
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    • 1996
  • Behavior of platinum group elements during crystallization within ore magma is of interest. In this study platinum is selected and its mineralogical and geochemical behavior in the presence of antimony and tellurium is investigated at 600$^{\circ}C$. High purity Pt, Sb, and Te are used as starting material and silica quartz tubings are as container. Rection products have been examined by use of ore microscope, X-ray diffractometer, electron microprobe analyser and micro-indentation hardness tester. stable phases at 600$^{\circ}C$ are platinum (Pt), Pt5Sb, Pt3Sb, PtSb, stumpflite (PtSb), geversite (PtSb), PtTe, Pt3Te4, Pt2Te3, moncheite (PtTe2), tellurantimony (Sb2Te3), and antimony (Sb). Geversite is the mineral showing the most significant extent of solid solution by up to 27 at% between Sb and Te elements. Isothermal section of 600$^{\circ}C$ is established in this study. It is noted that platinum cannot coexists with stumpflite or geversite under equilibrium condition, and stumpflite composition in equilibrium with geversite may be used as geothermometer.

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Fabrication Process and Power Generation Characteristics of the Micro Thermoelectric Devices Composed of n-type Bi-Te and p-type Sb-Te Nanowires (n형 Bi-Te 나노와이어와 p형 Sb-Te 나노와이어로 구성된 미세열전소자의 형성공정 및 열전발전특성)

  • Kim, Min-Young;Park, Kyung-Won;Oh, Tae-Sung
    • Korean Journal of Metals and Materials
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    • v.47 no.4
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    • pp.248-255
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    • 2009
  • A micro thermoelectric device was processed by electroplating the n-type Bi-Te nanowires and ptype Sb-Te nanowires into an alumina template with 200 nm pores. Power generation characteristics of the micro devices composed of the Bi-Te nanowires, the Sb-Te nanowires, and both the Bi-Te and the Sb-Te nanowires were analyzed with applying a temperature difference of $40^{\circ}C$ across the devices along the thickness direction. The n-type Bi-Te and the p-type Sb-Te nanowire devices exhibited thermoelectric power outputs of $3.8{\times}10^{-10}W$ and $4.8{\times}10^{-10}W$, respectively. The output power of the device composed of both the Bi-Te and the Sb-Te nanowires decreased to $1.4{\times}10^{-10}W$ due to a large electrical resistance of the Cu electrode connecting the Bi-Te nanowire array with the Sb-Te nanowire array.

Fabrication and Structural Properties of Ge-Sb-Te Thin Film by MOCVD for PRAM Application (상변화 메모리 응용을 위한 MOCVD 방법을 통한 Ge-Sb-Te 계 박막의 증착 및 구조적인 특성분석)

  • Kim, Ran-Young;Kim, Ho-Gi;Yoon, Soon-Gil
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.5
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    • pp.411-414
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    • 2008
  • The germanium films were deposited by metal organic chemical vapor deposition using $Ge(allyl)_4$ precursors on TiAlN substrates. Deposition of germanium films was only possible with a presence of $Sb(iPr)_3$, which means that $Sb(iPr)_3$ takes a catalytic role by a thermal decomposition of $Sb(iPr)_3$ for Ge film deposition. Also, as Sb bubbler temperature increases, deposition rate of the Ge films increases at a substrate temperature of $370^{\circ}C$. The GeTe thin films were fabricated by MOCVD with $Te(tBu)_2$ on Ge thin film. The GeTe films were grown by the tellurium deposition at $230-250^{\circ}C$ on Ge films deposited on TiAlN electrode in the presence of Sb at $370^{\circ}C$. The GeTe film growth on Ge films depends on the both the tellurium deposition temperature and deposition time. Also, using $Sb(iPr)_3$ precursor, GeSbTe films with hexagonal structures were fabricated on GeTe thin films. GeSbTe films were deposited in trench structure with 200 nm*120 nm small size.

A Study on the Electrical Properties of MIM Structures Based on Ge2Sb2Te5 and Ge8Sb2Te11 Thin Films for ReRAM (ReRAM응용을 위한 Ge2Sb2Te5와 Ge8Sb2Te11 기반 MIM구조 박막의 전기적 특성 연구)

  • Jang, Hwi-Jong;Kong, Heon;Yeo, Jong-Bin;Lee, Hyun-Yong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.30 no.3
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    • pp.144-147
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    • 2017
  • In this study, $Ge_2Sb_2Te_5$ and $Ge_8Sb_2Te_{11}$ were used as an insulator layer to fabricate ReRAM devices. The resistance change is correlated to the appearance or disappearance of a conductivity filament at the surface of the GeSbTe layer. Changes in the electrical properties of ITO/GeSbTe/Ag devices were measured using a I-V-L measurement system. As a result, compared to the $ITO/Ge_8Sb_2Te_{11}/Ag$ device, this $ITO/Ge_2Sb_2Te_5/Ag$ ReRAM device exhibits highly uniform bipolar resistive switching characteristics, such as the operating voltages, and the resistance values.

A Simple and Quick Chemical Synthesis of Nanostructured Bi2Te3, Sb2Te3, and BixSb2-xTe3

  • Kim, Hee-Jin;Lee, Ki-Jung;Kim, Sung-Jin;Han, Mi-Kyung
    • Bulletin of the Korean Chemical Society
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    • v.31 no.5
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    • pp.1123-1127
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    • 2010
  • We report a simple and quick route for the preparation of high-quality, nearly monodisperse $Bi_2Te_3$, $Sb_2Te_3$, and $Bi_xSb_{2-x}-Te_3$ nanocrystallites. The reactions of bismuth acetate or antimony acetate with Te in oleic acid result in pure phase of $Bi_2Te_3$ or $Sb_2Te_3$ nanoparticles, respectively. Also, ternary $Bi_xSb_{2-x}Te_3$ nanoparticles were successfully synthesized using the same method. The size and morphology of the nanoparticles were controlled by varying the stabilizing agents. The as-prepared nanoparticles are characterized by X-ray diffraction, scanning electron microscope, and high-resolution transmission electron microscope using an energy dispersive spectroscopy.

Electrical Properties of ZnTe-lnSb Heterojunctions (ZnTe-InSb Heterojunction의 전기적 특성)

  • 김화택
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.12 no.4
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    • pp.35-40
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    • 1975
  • The Zn7e-lnSb heterojunctions was prepared by interface alloying technique. The structure of this beterojunction had p-i-n which semi-insulating ZnTe laver at interface of this heterojunction was formed by diffusing In of InSb into ZnTe crystal. The current transport mechanism of this heterojunction was Spacecharge-Limited-Current(SCLC) mechanism by hole at semi-insulating ZnTe layer. The hole wart injected from valence band of p- type SnTe crystal. Orange color electroluminescence was observed at this heterojunction when forward and reversed bias voltage applied.

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