• Title/Summary/Keyword: Sb doped

Search Result 223, Processing Time 0.019 seconds

Effect of annealing temperature on the Structural, Electrical, Optical Properties of ATO Thin Films by RF Magnetron Sputtering (RF Magnetron Sputtering법에 의해 증착된 ATO박막의 열처리에 따른 구조적, 전기적, 광학적 특성 변화)

  • Moon, In-Gyu;Lee, Sung-Uk;Park, Mi-Ju;Kim, Young-Ryeol;Choi, Won-Seok;Hong, Byung-You
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2007.11a
    • /
    • pp.335-335
    • /
    • 2007
  • 본 연구에서는 RF Magnetron Sputtering 법으로 94:6 wt%의 비율로 Sb가 첨가된 $SnO_2$ 타겟을 사용하여 실온에서 ATO(Antimony doped Tin Oxide) 박막을 증착하고, 열처리가 ATO 박막의 구조적, 전기적, 광학적 특성에 미치는 효과를 연구하고자 하였다. ATO 박막의 두께는 약 200 nm로 증착하였으며, 실험 조건으로는 Ar 유량을 100 seem, 진공도는 1, 5, 10 mTorr로 변화시켰으며 스퍼터링 파워는 100, 150, 200, 250 W로 조절하였다. 증착되어진 박막은 vacuum 상태에서 300, $600^{\circ}C$의 온도에서 열처리를 수행하였으며 결과적으로 스퍼터링 파워가 증가함에 따라 비저항이 감소하였고, 250 W의 파워와 10 mTorr의 공정압력 조건에서 $600^{\circ}C$로 열처리한 ATO 박막은 $5{\times}10^{-3}{\Omega}-cm$의 저항률과 85.3%의 높은 투과도를 가지는 우수한 투명 전도막을 얻을 수 있었다.

  • PDF

Effect of V$_2$O$_5$ Addition on Microwave Dielectric Properties of (Zr$_{0.8}$,Sn$_{0.2}$)TiO$_4$ (V$_2$O$_5$의 첨가가 (Zr$_{0.8}$,Sn$_{0.2}$)TiO$_4$의 마이크로파 유전특성에 미치는 영향)

  • 이경호
    • Journal of the Microelectronics and Packaging Society
    • /
    • v.8 no.1
    • /
    • pp.27-32
    • /
    • 2001
  • The effect of $V_2O_5$, a donor-type dopant on the degradation of quality factor of ($Zr_{0.8}, Sn_{0.2})TiO_4$was compared with Ta$_2$O$_{5}$ doped ($Zr_{0.8}, Sn_{0.2})TiO_4$ in terms of microstructure, electrical conductivity, and oxidation state of the dopant. It is well known that the addition of the donor type species such as $Ta_2O_5,Nb_2O_5, Sb_2O_5, WO_{3}$, increases the quality factor of ($Zr_{0.8}, Sn_{0.2})TiO_4$due to decrease the oxygen vacancy concentration. Unlike other dopants, however, the addition of $V_2O_5$ decreased the quality factor. The degradation of quality factor of ($Zr_{0.8}, Sn_{0.2})TiO_4$was resulted from the formation of grain boundary phase and $V_2O_5$rich fiber shaped secondary phase, and the increasing the oxygen vacancy concentration due to unstability of oxidation state of vanadium ions in ($Zr_{0.8}, Sn_{0.2})TiO_4$ceramic.c.

  • PDF

Structural and Piezoelectric Properties of MnO2-Doped PZT-PSN Ceramics for Ultrasonic Vibrator (초음파 진동자용 MnO2가 Doping된 PZT-PSN 세라믹스의 구조 및 압전 특성)

  • Cha, Yoo-Jeong;Kim, Chang-Il;Kim, Kyoung-Jun;Jeong, Young-Hun;Lee, Young-Jin;Lee, Hai-Gun;Paik, Jong-Hoo
    • Korean Journal of Materials Research
    • /
    • v.19 no.4
    • /
    • pp.198-202
    • /
    • 2009
  • For use in ultrasonic actuators, we investigated the structural and piezoelectric properties of $(1\;-\;x)Pb(Zr_{0.515}Ti_{0.485})O_3$ - $xPb(Sb_{1/2}Nb_{1/2})O_3$ + 0.5 wt% $MnO_2$ [(1 - x)PZT - xPSN + $MnO_2$] ceramics with a variation of x (x = 0.02, 0.04, 0.06, 0.08). All the ceramics, which were sintered at $1250^{\circ}C$ for 2 h, showed a typical perovskite structure, implying that they were well synthesized. A homogeneous micro structure was also developed for the specimens, and their average grain size was slightly decreased to $1.3{\mu}m$ by increasing x to 0.8. Moreover, a second phase with a pyrochlore structure appeared when x was above 0.06, which resulted in the deterioration of their piezoelectric properties. However, the 0.96PZT-0.04PSN+$MnO_2$ ceramics, which corresponds with a morphotropic phase boundary (MPB) composition in the (1 - x)PZT - xPSN + $MnO_2$ system, exhibited good piezoelectric properties: a piezoelectric constant ($d_{33}$) of 325 pC/N, an electromechanical coupling factor ($k_p$) of 70.8%, and a mechanical quality factor ($Q_m$) of 1779. The specimens with a relatively high curie temperature ($T_c$) of $305^{\circ}C$ also showed a significantly high dielectric constant (${\varepsilon}_r$) value of 1109. Therefore, the 0.96PZT - 0.04PSN + $MnO_2$ ceramics are suitable for use in ultrasonic vibrators.