• Journal of the Korean Magnetics Society
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• v.21 no.2
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• pp.77-82
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• 2011

The use of soft magnetic materials have been increasing in the various industrial fields according to the increasing demand for high performance, automatic, miniaturing equipments in the recent our life. In this study, we investigated the effect of factors on the core loss and magnetic properties of electrical steel and soft magnetic composites. Furthermore, we reviewed the major efforts to reduce the core loss and improve the soft magnetic properties in the two main soft magnetic materials. Domain purification which results from reduced density of defects in cleaner electrical steels is combined with large grains to reduce hysteresis loss. The reduced thickness and the high electrical conductivity reduce the eddy current component of loss. Furthermore, the coating applied to the surface of electrical steel and texture control lead to improve high permeability and low core loss. There is an increasing interest in soft magnetic composite materials because of the demand for miniaturization of cores for power electronic applications. The SMC materials have a broad range of potential applications due to the possibility of true 3-D electromagnetic design and higher frequency operation. Grain size, sintering temperature, and the degree of porosity need to be carefully controlled in order to optimize structure-sensitive properties such as maximum permeability and low coercive force. The insulating coating on the powder particles in SMCs eliminates particle-to-particle eddy current paths hence minimizing eddy current losses, but it reduces the permeability and to a small extent the saturation magnetization. The combination of new chemical composition with optimum powder manufacturing processes will be able to result in improving the magnetic properties in soft magnetic composite materials, too.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.404-404
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• 2016

태양전지 제작 시 표면에 피라미드 구조를 형성하면 입사되는 광의 흡수를 높여 광 생성 전류의 향상에 기여한다. 일반적인 KOH를 이용한 습식 표면조직화 공정은 평균 10%의 반사율을 보였으며, 유도 결합 플라즈마를 이용한 RIE 공정은 평균 5.4%의 더 낮은 반사율을 보였다. 그러나 RIE 공정을 이용한 표면조직화는 낮은 반사율과 서브 마이크론 크기의 표면 구조를 만들 수 있지만 플라즈마 조사에 의한 표면 손상이 많이 발생하게 된다. 이러한 표면 손상은 태양전지 제작 시 표면에서 높은 재결합 영역으로 작용하게 되어 포화 전류(saturation currents, $J_0$)를 증가시키고 캐리어 수명(carrier lifetime, ${\tau}$)을 낮추는 결함 요소로 작용한다. 이러한 플라즈마에 의한 표면 손상을 제거하기 위해 HF, HNO3, DI-water를 이용하여 DRE(Damage Remove Etching) 공정을 진행하였다. DRE 공정은 HF : DI-water 솔루션과 HNO3 : HF : DI-water 솔루션의 두 가지 공정을 이용하여 공정 시간을 가변하며 진행하였다. 포화전류($J_0$), 캐리어 수명(${\tau}$), 벌크 캐리어 수명(Bulk ${\tau}$)을 비교를 하기위해 KOH, RIE, RIE + DRE 공정을 진행한 세 가지 샘플로 실험을 진행하였다. DRE 공정을 적용할 경우 공정 시간이 지날수록 반사도가 높아지는 경향을 보였지만, 두 번째의 최적화된 솔루션 공정에서 $2.36E-13A/cm^2$, $42{\mu}s$의 $J_0$, Bulk ${\tau}$값과 가장 높은 $26.4{\mu}s$의 ${\tau}$를 얻을 수 있었다. 이러한 결과는 오제 재결합(auger recombination)이 가장 많이 발생하는 지역인 표면과 불균일한 도핑 영역에서 DRE 공정을 통해 나아진 표면 특성과 균일한 도핑 프로파일을 형성하게 되어 재결합 영역과 $J_0$가 감소 된 것으로 판단된다. 높아진 반사도의 경우 $SiN_x$를 이용한 반사방지막을 통해 표면 반사율을 1% 이내로 내릴 수 있어 보완이 가능하였다. 본 연구에서는 RIE 공정 중 플라즈마에 의해 발생하는 표면 손상 제거를 통하여 캐리어 라이프 타임의 향상된 조건을 찾기 위한 연구를 진행하였으며, 기존 RIE 공정에 비해 반사도의 상승은 있지만 플라즈마로 인한 표면 손상을 제거하여 오제 재결합에 의한 발생하는 $J_0$를 낮출 수 있었고 높은 ${\tau}$값인 $26.4{\mu}s$의 결과를 얻어 추후 태양전지 제작에 향상된 효율을 기대할 수 있을 것으로 기대된다.

• 한국신재생에너지학회:학술대회논문집
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• 2005.06a
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• pp.643-646
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• 2005

The gas hydrate exploration using seismic reflection data, the detection of BSR(Bottom Simulating Reflector) on the seismic section is the most important work flow because the BSR have been interpreted as being formed at the base of a gas hydrate zone. Usually, BSR has some dominant qualitative characteristics on seismic section i.e. Wavelet phase reversal compare to sea bottom signal, Parallel layer with sea bottom, Strong amplitude, Masking phenomenon above the BSR, Cross bedding with other geological layer. Even though a BSR can be selected on seismic section with these guidance, it is not enough to conform as being true BSR. Some other available methods for verifying the BSR with reliable analysis quantitatively i.e. Interval velocity analysis, AVO(Amplitude Variation with Offset)analysis etc. Usually, AVO analysis can be divided by three main parts. The first part is AVO analysis, the second is AVO modeling and the last is AVO inversion. AVO analysis is unique method for detecting the free gas zone on seismic section directly. Therefore it can be a kind of useful analysis method for discriminating true BSR, which might arise from an Possion ratio contrast between high velocity layer, partially hydrated sediment and low velocity layer, water saturated gas sediment. During the AVO interpretation, as the AVO response can be changed depend upon the water saturation ratio, it is confused to discriminate the AVO response of gas layer from dry layer. In that case, the AVO modeling is necessary to generate synthetic seismogram comparing with real data. It can be available to make conclusions from correspondence or lack of correspondence between the two seismograms. AVO inversion process is the method for driving a geological model by iterative operation that the result ing synthetic seismogram matches to real data seismogram wi thin some tolerance level. AVO inversion is a topic of current research and for now there is no general consensus on how the process should be done or even whether is valid for standard seismic data. Unfortunately, there are no well log data acquired from gas hydrate exploration area in Korea. Instead of that data, well log data and seismic data acquired from gas sand area located nearby the gas hydrate exploration area is used to AVO analysis, As the results of AVO modeling, type III AVO anomaly confirmed on the gas sand layer. The Castagna's equation constant value for estimating the S-wave velocity are evaluated as A=0.86190, B=-3845.14431 respectively and water saturation ratio is $50\%$. To calculate the reflection coefficient of synthetic seismogram, the Zoeppritz equation is used. For AVO inversion process, the dataset provided by Hampson-Rushell CO. is used.

• Journal of Nutrition and Health
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• v.31 no.1
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• pp.96-101
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• 1998

The prevalence of iron deficiency in later infancy and the toddler years(25% to 40% at 1 year of age) has not decreased remarkably , except in Western countries. The purpose of this study was to 1) determine the relationship between current feeding practices and iron status, and 2) assess compliance to infant feeding instructions. Two groupsof infants were examined. The first group of 302 infants aged 6 to 24months was seen at a well baby clinic while the second group of 135 infants of the same age group was assessed by venipuncture. Cutoff values for laboratory tests were as follows ; hemoglobin<11g/dL, mean corpuscular volume (MCV) <72fl ; red cell distribution width(RDW)>15% ; serum ferritin level<10ng/ml ; and transferrin saturation (serum iron(TIBC)<10%. The diagnosis of iron deficiency anemia (IDA) was made when a low hemoglobin level was associated with either low ferritin orlow transferrin saturation . Of the 302 children brought to the well baby clinic , 12.3%(n=37) were found to have anemia (hemoglobin<11.0/dL). In terms of children grouped according to feeding practices, it was found that children with anemial comprised 32.0% (24/75) of the prolonged breast-fed group (Group A), significantly more than the 4.0%(7/176) of the artificial milk feeding group(Group B). and 3.9%(2/51) of the switched from breast milk to iron -fortified weaning foods group(Group C).Among the 107 children with IDA , iron deficiency in 105 children(98.1%) was suggested by their dietary histories ; exclusive or prolonged breast-feeding for more than 6 months without iron fortification in 98 infants ; cow's milk consumption> 500ml/day without iron fortification during infancy(n=12), or >800ml without iron-fortified foods after infancy(n=15) ; and the use of unfortified forumula or unbalanced diets, mainly limited to rice gruel. Despite the relatively high (79.6%) motivation on the part of the infants mothers and supervison by professional personnel, the poor results in the infants receiving iron fortified foods were due to poor compliance(85.75). Among the mothers of 98 IDA patients who were contacted by telephone , it was revealed that 29% did not give the oral iron preparation for more than 2 months. Furthermore, negligence or disregard by the parents occurred in 14% of the case , discontinuance of the oral iron preparation by the parents due to side effects occurred in 6%, and the children's refusal or poor oral intake and no further trial occurred in 6%. The dietary history of a large group of infants was highly predictive of their risk for anemia . Continued consumption of breast milk until the age of 1 year is not warranted unless iron-fortified foods are given concomitantly. Because there is a problem with compliance, more successful and safe strategies for preventing iron deficiency woold included dual coverage in the from of therapeutic iron supplementation as well use of iron-fortified foods for teddlers who are at risk of iron deficiency.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.6
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• pp.24-33
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• 2000

Switching behaviour of the ferroelectric thin film and device characteristics of the MFSFET(Metal-Ferroelectric-Semiconductor FET) are simulated with taking into account the accumulation of oxygen vacancies near interface between the ferroelectric thin film and the bottom electrode caused by the progress of fatigue. In our switching model, relative switched charge is 0.74 nC before fatigue, but after the progress of fatigue it reduces to 0.15 nC with the generation of oxygen vacancies. It indicates that the generation of oxygen vacancies strongly suppresses polarization reversal. $C-V_G\;and\;I_D-V_G$ curves in our MFSFET device model exhibit the memory window of 2 V and show the accumulation, the depletion and the inversion regions in capacitance characteristic clearly. The difference of saturation drain current of the device before fatigue in shown by the dual threshold voltages in $I_D-V_G$ curve as 6nA/$cm^2$ and decreases as much as 50% after fatigue. Decrease of the difference of saturation drain currents by fatigue implies that the accumulation of oxygen vacancies with the fatigue should be avoided in the device application. Our simulation model is expected to play an important role in estimation of the behavior of MFSFET device with various ferroelectric thin films.

• The Journal of Engineering Geology
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• v.14 no.1
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• pp.71-80
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• 2004

The failure of cut slopes frequently occurs particularly during the thawing season and the rain season in summer. This study interpreted data collected from site to which a real-monitoring system was applied in order to analyze the causes of ground behaviors and to forecast future slope failure. As for research methods, this study analyzed the size and mechanism of failure by integrating the results of field surveys and measurements. Furthermore, it analyzed data transmitted by the monitoring system installed in the a result, three times of ground displacement occurred as well as a number of partial tension cracks. The cut slope composed of sandstone and siltstone started its initial behavior as a result of torrential downpour and the loss of support of the substructure. For quantitative analysis of the characteristics of ground behavior, this study measured 5 lateral lines. According to the result of the measurement, displacement happened little in the section to which countermeasure had been applied, but displacement of maximum 400mm happened in the section to which countermeasure had not bee applied. The analysis of data on displacement and rainfall suggested a close relationship between ground behavior and rainfall. According to the result of stability interpretation along with the change of ground saturation, stability rate appeared to be less than 1.0 when ground saturation is over 55%. Although the current trend of ground behavior is at a stable stage falling within the range of tolerance, it is considered necessary to continue monitoring and data analysis because ground displacement is highly possible with the change of temperature during the winter.

• Tunnel and Underground Space
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• v.31 no.3
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• pp.167-183
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• 2021

It is essential to understand the complex thermo-hydro-mechanical-chemical (THMC) coupled behavior in the engineered barrier system and natural barrier system to secure the high-level radioactive waste repository's long-term safety. The heat from the high-level radioactive waste induces thermal pressurization and vaporization of groundwater in the repository system. Groundwater inflow affects the saturation variation in the engineered barrier system, and the saturation change influences the heat transfer and multi-phase flow characteristics in the buffer. Due to the complexity of the coupled behavior, a numerical simulation is a valuable tool to predict and evaluate the THMC interaction effect on the disposal system and safety assessment. To enhance the knowledge of THMC coupled interaction and validate modeling techniques in geological systems. DECOVALEX, an international cooperation project, was initiated in 1992, and KAERI has participated in the projects since 2008 in Korea. In this study, we introduced the main contents of all tasks in the DECOVALEX-2023, the current DECOVALEX phase, to the rock mechanics and geotechnical researchers in Korea.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.4
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• pp.785-792
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• 2012

In this paper, a current-voltage characteristics of n-channel junctionless and inversion mode(IM) MuGFET, and p-channel junctionless and accumulation mode(AM) MuGFET has been measured and analyzed for the application in high speed and low power switching devices. From the variation of the threshold voltage and the saturation drain current with the substrate bias voltages, their variations in IM devices are larger than junctionless devices for n-channel devices, but their variations in junctioness devices are larger than AM devices for p-channel devices. The variations of transconductance with substrate biases are more significant in p-channel devices than n-channel devices. From the characteristics of subthreshold swing, it was observed that the S value is almost independent on the substrate biases in n-channel devices and p-channel junctionless devices but it is increased with the increase of the substrate biases in p-channel AM devices. For the application in high speed and low power switching devices using the substrate biases, IM device is better than junctionless devices for n-channel devices and junctionless device is better than AM devices for p-channel devices.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.1
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• pp.48-61
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• 1989

In this paper, two-dimensional numerical simulation of GaAs MESFFT with 0.7${\mu}m$ gate length is perfomed. Drift-diffusion model which consider that mobility is a function of local electric field, is used. As a discretization method, instead of FDM (finite difference method) and FEM (finite element method), the Control-Volume Formulation (CVF) is used and as a numerical scheme current hybrid scheme or upwind scheme is replaced by power-law scheme which is very approximate to exponential scheme. In the process of numerical analysis, Peclet number which represents the velocity ratio of drift and diffusion, is introduced. And using this concept a current equation which consider numerical scheme at the interface of control volume, is proposed. The I-V characteristics using the model and numerical method has a good agreement with that of previous paper by others. Therefore, it is confined that it may be useful as a simulator for GaAs MESFET. Besides I-V characteristics, the mechanism of both velocity saturation in drift-diffusion model is described from the view of velocity and electric field distribution at the bottom of the channel. In addition, the relationship between the mechanism and position of dipole and drain current, are described.

• Journal of IKEEE
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• v.11 no.4
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• pp.272-278
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• 2007

In this paper, we report on the 2D (two-dimensional) simulation result of the DC (direct current) electrical and thermal characteristics of AlGaN/GaN HEMTs (high electron mobility transistors) grown on Si substrate, in comparison with those grown on sapphire and SiC (silicon carbide) substrate, respectively. In general, the electrical properties of HEMT are affected by electron mobility and thermal conductivity, which depend on substrate material. For this reason, the substrates of GaN-based HEMT have been widely studied today. The simulation results are compared and studied by applying general Drift-Diffusion and thermal model altering temperature as 300, 400 and 500 K, respectively. With setting T=300 K and $V_{GS}$=1 V, the $I_{D,max}$ (drain saturation current) were 189 mA/mm for sapphire, 293 mA/mm for SiC, and 258 mA/mm for Si, respectively. In addition, $G_{m,max}$ (maximum transfer conductance) of sapphire, SiC, Si was 38, 50, 31 mS/mm, respectively, at T=500 K.