• Korean Journal of Remote Sensing
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• v.25 no.1
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• pp.31-44
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• 2009

The objective of this study was to measure backscattering coefficients of paddy rice using a L-, C-, and X-band scatterometer system with full polarization and various angles during the rice growth period and to relate backscattering coefficients to rice growth parameters. Radar backscattering measurements of paddy rice field using multifrequency (L, C, and X) and full polarization were conducted at an experimental field located in National Academy of Agricultural Science (NAAS), Suwon, Korea. The scatterometer system consists of dual-polarimetric square horn antennas, HP8720D vector network analyzer ($20\;MHz{\sim}20\;GHz$), RF cables, and a personal computer that controls frequency, polarization and data storage. The backscattering coefficients were calculated by applying radar equation for the measured at incidence angles between $20^{\circ}$ and $60^{\circ}$ with $5^{\circ}$ interval for four polarization (HH, VV, HV, VH), respectively. We measured the temporal variations of backscattering coefficients of the rice crop at L-, C-, X-band during a rice growth period. In three bands, VV-polarized backscattering coefficients were higher than hh-polarized backscattering coefficients during rooting stage (mid-June) and HH-polarized backscattering coefficients were higher than VV-, HV/VH-polarized backscattering coefficients after panicle initiation stage (mid-July). Cross polarized backscattering coefficients in X-band increased towards the heading stage (mid-Aug) and thereafter saturated, again increased near the harvesting season. Backscattering coefficients of range at X-band were lower than that of L-, C-band. HH-, VV-polarized ${\sigma}^{\circ}$ steadily increased toward panicle initiation stage and thereafter decreased, and again increased near the harvesting season. We plotted the relationship between backscattering coefficients with L-, C-, X-band and rice growth parameters. Biomass was correlated with L-band hh-polarization at a large incident angle. LAI (Leaf Area Index) was highly correlated with C-band HH- and cross-polarizations. Grain weight was correlated with backscattering coefficients of X-band VV-polarization at a large incidence angle. X-band was sensitive to grain maturity during the post heading stage.

• Journal of the Korean Ceramic Society
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• v.41 no.5
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• pp.401-405
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• 2004

Undoped SrB $i_2$T $a_2$O$_{9}$, donor-doped Sr$_{0.99}$B $i_2$(Ta$_{0.99}$W$_{0.01}$)$_2$O$_{9}$ and acceptor-doped SrB $i_2$(Ta$_{0.99}$Ti$_{0.01}$)$_2$O$_{8.99$ ceramics were prepared and their microstructure, ferroelectric P-E hysteresis and Curie temperature were investigated. Grain size did not influence P-E hysteresis curve in undoped SrB $i_2$T $a_2$O$_{9}$ ceramics. Donor-Doped Sr$_{0.99}$B $i_2$(Ta$_{0.99}$W$_{0.01}$)$_2$O$_{9}$ ceramics showed more saturated P-E hysteresis curve with larger remanent polarization (P$_{r}$) than undoped SrB $i_2$T $a_2$O$_{9}$ ceramics while acceptor-doped SrB $i_2$(Ta$_{0.99}$Ti$_{0.01}$)$_2$O$_{8.99}$ ceramics led to a pinched P-E hysteresis loop. Larger polarization in donor-doped Sr$_{0.99}$B $i_2$(Ta$_{0.99}$W$_{0.01}$)$_2$O$_{9}$ ceramics resulted from easier domain wall motion by Sr-vacancies.

• Restorative Dentistry and Endodontics
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• v.13 no.2
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• pp.221-235
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• 1988

The purpose of this study was to observe characteristic properties through the polarization curves and EMPA images from 4 different types of amalgam obtained by using the potentiostats (EG & G PARC) & EPMA (Jeol JSM-35), to investigate the degree of corrosion of each phase of amalgam on the oxidation peak, and to identify corrosion products from the corroded amalgam by use of X-ray diffractometer(Rigaku). After each amlgam alloy and Hg were triturated as the direction of the manufacturer by means of the mechanical amalgamator(Shofu), the triturated mass was inserted into the cylindrical metal mold which was 12mm in diameter and 10mm in height and was condensed by means of routine manner. The specimen was removed from the mold and stored at room temperature for about 7 days. The standard surface preparation was routinely carried out. Anodic polarization measurement was employed to compare the corrosion behaviours of the amalgams in 0.9% saline solution(pH6.8~7.0) and artificial saliva (pH6.8~7.0) at $37^{\circ}C$. The open circuit potential was determined after 30 minutes' immersion of specimen in electrolyte and the potential scan was begun at the potential of 100mV cathodic from the corrosion potential. The scan rate was 1mV/sec and the surface area of amalgam exposed to the solution was 0.64$cm^2$ for each specimen. All the potentials reported are with respect to a saturated calomel electrode (SCE). EPMA images on the determined oxidation peaks of each amalgam in artificial saliva were observed. X-ray diffraction patterns of each sample were recorded before and after polarization in artificial saliva (Aristaloy, Caulk Spherical, Dispersalloy and Tytin: at +770mV, +585mV, +8.10m V and +680m V respectively) by use of a recording diffractometer. Nickel filtered Cu $K_{{\alpha}_1}$ radiation was used and sample was scanned at $4^{\circ}(2{\theta})/min.$ from $25^{\circ}$ to $80^{\circ}$. The following results were obtained. 1. Oxidation peak potential in artificial saliva shifted to more anodic direction than that in saline solution. 2. The corrosion potential of high copper amalgam was more anodic than the potential of low copper amalgam. 3. The current density was lower in artificial saliva than in saline solution. 4. One of the corrosion products, AgCl was identified by X-ray diffraction analysis. 5. ${\gamma}_2$ phase was the most susceptible to corrosion and e phase was stable in low copper amalgam and ${\eta}$' phase and Ag-Cu eutectic were susceptible to corrosion in high copper amalgam.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.236-236
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• 2008

(Bi,La)$Ti_3O_{12}$(BLT) thin film is one of the most attractive materials for ferroelectric random access memory (FRAM) applications due to its some excellent properties such as high fatigue endurance, low processing temperature, and large remanent polarization [1-2]. The authors firstly investigated and reported the damascene process of chemical mechanical polishing (CMP) for BLT thin film capacitor on behalf of plasma etching process for fabrication of FRAM [3]. CMP process could prepare the BLT capacitors with the superior process efficiency to the plasma etching process without the well-known problems such as plasma damages and sloped sidewall, which was enough to apply to the fabrication of FRAM [2]. BLT-CMP characteristics showed the typical oxide-CMP characteristics which were related in both pressure and velocity according to Preston's equation and Hernandez's power law [2-4]. Good surface roughness was also obtained for the densification of multilevel memory structure by CMP process [3]. The well prepared BLT capacitors fabricated by CMP process should have the sufficient ferroelectric properties for FRAM; therefore, in this study the electrical properties of the BLT capacitor fabricated by CMP process were analyzed with the process parameters. Especially, the effects of CMP pressure, which had mainly affected the removal rate of BLT thin films [2], on the electrical properties were investigated. In order to check the influences of the pressure in eMP process on the ferroelectric properties of BLT thin films, the electrical test of the BLT capacitors was performed. The polarization-voltage (P-V) characteristics show a decreased the remanent polarization (Pr) value when CMP process was performed with the high pressure. The shape of the hysteresis loop is close to typical loop of BLT thin films in case of the specimen after CMP process with the pressures of 4.9 kPa; however, the shape of the hysteresis loop is not saturated due to high leakage current caused by structural and/or chemical damages in case of the specimen after CMP process with the pressures of 29.4 kPa. The leakage current density obtained with positive bias is one order lower than that with negative bias in case of 29.4 kPa, which was one or two order higher than in case of 4.9 kPa. The high pressure condition was not suitable for the damascene process of BLT thin films due to the defects in electrical properties although the better efficiency of process. by higher removal rate of BLT thin films was obtained with the high pressure of 29.4 kPa in the previous study [2].

• Journal of the Korea institute for structural maintenance and inspection
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• v.24 no.3
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• pp.87-95
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• 2020

As an experimental study on the corrosion behavior of steel materials to which ATMS method using EIS was applied in concrete, immersion of Ca(OH)₂ saturated aqueous solution and NaCl aqueous solution simulating the environment inside concrete The corrosion behavior was tested. The equivalent circuit was derived through the analysis of the Nyquist plot, and the interfacial resistance and the polarization resistance of the Ca(OH)₂ aqueous solution were compared, and Al ATMS was the best interfacial resistance and Zn ATMS was the best polarization resistance. After burying ATMS steel material of cement mortar, the initial immersion impedance measurement value was the highest in the Zn ATMS test body in the impedance measurement by the immersion time by immersing it in the NaCl aqueous solution. Al ATMS test piece has the highest impedance and is highly reliable. This is because Al, which has a high ionization tendency, is continuously oxidized in a strong alkaline environment to form a film and protect the steel from permeation of chlorine ions.

• The Journal of the Korea Contents Association
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• v.14 no.4
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• pp.237-242
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• 2014

In this study, surface characteristics and corrosion behaviors have been investigated in addition to Zr elements on the low elastic modulus Ti-30Ta alloy. Low elastic modulus Ti-30Ta-xZr(x : 3, 7 and 15 wt %) alloys were prepared by arc melting and then heat treated at $1000^{\circ}C$ for 24 hrs in an argon atmosphere. Microstructures of the alloys were examined by field emission scanning electron microscope(FE-SEM) and X-ray diffractometer(XRD). Electrochemical experiments were performed using a conventional three-electrode configuration with a sample working electrode, a high density carbon counter electrode and a saturated calomel reference electrode. According to the result of polarization behavior in the Ti-30Ta-xZr alloys, the current density of homogenized Ti-30Ta-15Zr in the passive region was lower than the other alloys.

• Corrosion Science and Technology
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• v.3 no.3
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• pp.118-126
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• 2004

The correlation between sensor output and corrosion rate of reinforcing steel was evaluated by laboratory electrochemical tests in saturated $Ca(OH)_2$ with 3.5 wt.% NaCl and confirmed in concrete environment. In this paper, two types of electrochemical probes were developed: galvanic cells containing of steel/copper and steel/stainless steel couples. Potentiodynamic test, weight loss measurement, monitoring of open-circuit potential, linear polarization resistance (LPR) measurement and electrochemical impedance spectroscopy (EIS) were used to evaluate the corrosion behavior of steel bar embedded in concrete. Also, galvanic current measurements were conducted to obtain the charge of sensor embedded in concrete. In this study, steel/copper and steel/stainless steel sensors showed a good correlation in simulated concrete solution between sensor output and corrosion rate of steel bar. However, there was no linear relationship between steel/stainless steel sensor output and corrosion rate of steel bar in concrete environment due to the low galvanic current output. Thus, steel/copper sensor is a reliable corrosion monitoring sensor system which can detect corrosion rate of reinforcing steel in concrete structures.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.3
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• pp.205-212
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• 2002

The growth characteristics of metal-organic chemical vapor deposition (MOCVD) $Pb(Zr_xTi_{1-x})O_3 (PZT) thin films were investigated for the application of high-density ferroelectric random access memories (FRAM) devices beyond 64Mbit density. The supply control of Pb precursor plays the most critical role in order to achieve a reliable process for PZT thin film deposition. We have monitored the changes in the microstructure and electrical properties of films on increasing the Pb precursor supply into the reaction chamber. Under optimized conditions, $Ir/IrO_2/PZT(100nm)/Ir capacitor shows well-saturated hysteresis loops with a remanent polarization (Pr) of $~28{\mu}C/textrm{cm}^2$ and coercive voltage of 0.8V at 2.5V. Other issues such as step coverage, compositional uniformity and low temperature deposition was discussed in viewpoint of actual device application.

• Electrical & Electronic Materials
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• v.10 no.10
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• pp.1041-1047
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• 1997

In this paper the dielectric properties of (0.8-x)Pb(Mb$_{1}$3//Nb/2/3)O$_3$/BaTiO$_3$-CaZrO$_3$(x=0.1, 0.15, 0.2, 0.25) ceramics were investigated. Specimens were prepared by the conventional mixed oxide method and sintering temperature and time were 1000~115$0^{\circ}C$ 2hr, respectively. The structural and dielectric properties with variation of sintering temperature and composition were investigated. All the specimens sintered at 115$0^{\circ}C$ for 2hr showed the highest value of 1043. With increasing the contents of CZ and frequency dielectric constant was decreased and which was decreased with increasing temperature from 3$0^{\circ}C$ to 15$0^{\circ}C$.

• Journal of the Korean Vacuum Society
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• v.8 no.3A
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• pp.238-244
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• 1999

Pt/SBT/Pt capacitors were fabricated using the MOD-derived $SrBi_{2x}Ta_2O_9$ (SBT) films and their ferroelectic and leakage current characteristics were investigated with post annealing at 400~$800^{\circ}C$. Although the MOD-derived SBT film exhibited the hysteresis loop typical for the leaky film, the well-saturated ferroelectric hysteresis loop could be obtained by post annealing the Pt/SBT/Pt capacitors at $550^{\circ}C$~$800^{\circ}C$. The remanent polarization $2P_r$ of the SBT film exhibited a maximum value of 9.72$\mu\textrm{cm}^2$ with post annealing at $600^{\circ}C$, and then decreased with increasing the post annealing temperature above $600^{\circ}C$. The MOD-derived SBT films exhibited the high leakage current density of ~$10^{-3} \textrm{A/cm}^2$ at 75kV/cm. With post annealing the Pt/SBT/Pt capacitor at 600~$800^{\circ}C$, however, the leakage current density decreased remarkably to less than $10^{-6}\textrm{A/cm}^2$ at 75kV/cm.