• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2002년도 학술대회 논문집
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• pp.306-309
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• 2002

A superconducting CICC (Cable-In-Conduit-Conductor) is adopted the KSTAR (Korea Superconducting Tokamak Advanced Research) superconducting magnet system which consists of 16 TF coils and 14 PF coils. For the test of KSTAR CICC, an ambient magnetic field of $\pm$ 8 T With a maximum change rate of 20 T/s is required and a background-field magnet system is being developed for SSTF (Samsung Superconductor Test Facility). The CICC for PF1~5 is used as the conductor for background-field coils to check the validity of the PF CICC design. Two pieces of cables have been fabricated and the cable has the length of 870 m and the diameter of 20.3 mm. A continuous CICC jacketing system is developed for the KSTAR CICC fabrication and the jacketing system uses the tube-mill process, which consists of forming, welding, sizing and squaring procedures. The design specification of CICCs and the fabrication process is described.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2003년도 somma/kms meeting
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• pp.122-122
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• 2003

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2007년도 The 1st International Symposium on Advanced Magnetic Materials
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• pp.203.2-203.2
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• 2007

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2007년도 The 1st International Symposium on Advanced Magnetic Materials
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• pp.136.2-136.2
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• 2007

• Archives of Plastic Surgery
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• 제43권1호
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• pp.114-116
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• 2016

• 한국가스학회:학술대회논문집
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• 한국가스학회 2006년도 추계학술발표회 논문집
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• pp.61-66
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• 2006

• 한국통신학회:학술대회논문집
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• 한국통신학회 2006년도 하계종합학술발표회 논문 초록집
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• pp.482-482
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• 2006

• 대한생식의학회:학술대회논문집
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• 대한불임학회 2004년도 제47차 추계학술대회
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• pp.61-61
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• 2004

• 한국의학물리학회:학술대회논문집
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• 한국의학물리학회 2006년도 제33회 추계학술대회 발표논문집
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• pp.100-100
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• 2006

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1320-1322
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• 2005

Microcrystalline silicon films were deposited on glass substrate by using plasma-enhanced chemical vapor deposition (PECVD) method. The crystalline volume fraction was estimated by means of Raman spectrometer with argon laser as light source. The high hydrogen dilution of silane gas was used for increase in content of crystal silicon phase.