• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.9
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• pp.378-382
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• 2003

Transparent conductive oxides (TCO) are necessary as front electrode for most thin film solar cell. In our paper, transparent conducting aluminum-doped Zinc oxide films (ZnO:Al) were prepared by rf magnetron sputtering on glass (Corning 1737) substrate as a variation of the deposition condition. After deposition, the smooth ZnO:Al films were etched in diluted HCI (0.5%) to examine the electrical and surface morphology properties as a variation of the time. The most important deposition condition of surface-textured ZnO films by chemical etching is the processing pressure md the substrate temperature. In low pressures (0.9mTorr) and high substrate temperatures ($\leq$$300^{\circ}C$), the surface morphology of films exhibits a more dense and compact film structure with effective light-trapping to apply the silicon thin film solar cells.

• Proceedings of the KIEE Conference
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• 2000.07e
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• pp.22-25
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• 2000

Time dependent ozone generation characteristics of some oxide layers grown by ozone on the surface of corona discharge wires have been investigated experimentally in air ambience. Four wires of stainless steel, iron, silver and copper were used for the corona discharge wire of an ozone generator. And the effect of the metal oxide layers on ozone generation was studied and the contamination morphology of each layers was characterized. With the SEM images and the EDS spectra, it was found that all the surface of the corona wire were oxidized by the generated ozone and contaminated by airborne particles through the gradient force. As a result, the morphology and the electrical property of metal oxide layer grown on corona wire surface influenced on ozone generation characteristics i.e. discharge mechanisms.

• Journal of Surface Science and Engineering
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• v.24 no.2
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• pp.73-79
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• 1991

Recent studies son surface coatings have shown that the change of physical, chemical and crystallographic structure analysed and observed according to the deposition process variables has the effects on the resultant film properties. Under the same preparation condition conditions of the substrate and process variables, physical morphology variations characterized by substrate temperature and bias which offect the surface mobility of adatom and adhesion variations related to the formation of Ti interlayer were considered in the present study. Microhardness showed the highest value around 40$0^{\circ}C$ of the substrate temperature and increased with the substrate bias. Adhesion was improved with the increase of substrate temperature and bias. An interlayer of pure titanium formed prior to deposition of TiN improves the adhesion at its optimum thickness. These results were explained by the change of physical morphology and phase analysis.

• Membrane Journal
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• v.12 no.1
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• pp.28-40
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• 2002

The primary objective of this study is to elucidate the contribution of the electrostatic and molecula structural properties of an active layer of the thin film compsite (TFC) membranes to fouling tendency. The studies of surface morphology and surface charge were very effective in understanding fouling behaviors of the reverse osmosis (RO) membranes which were the thin film composite type of ployamide. Results of microscopic morphology analyzed by atomic force microscopy (AFM) and surface charge analyzed by electrokinetic analyzer (EKA) showed important factors affecting the fouling of RO membranes. The active layer of the composite membrane possessing realtively neutral streaming charge and less roughness provided a RO membrane with slowly decreasing flux.

• Journal of Surface Science and Engineering
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• v.30 no.2
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• pp.104-110
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• 1997

Conventional hexavlent chromium electroplating baths deposit the matal at low cathode efficiency and have poor covering and throwing power. The processs also generate hazardous wastes. To overcome many of the disadvantages of hexavalent chromium plating the use of trivalent chromium has advocted. After Yoshida, who first studied trivalent chromium plating, using ammonium sulfate and urea, there are numerous report describing the trivalent chromium electropating process using complexing agents. This study investigaten trivalent chromium plating electrolyte solutious containing formate as a complexing agent and ammouim chloride for conducting agent. The effects of composition and operating conditions on deposits and current efficiencies were investigated in trivalent chromium plating baths by analyzing the relationship pulse conditions and surface morphology The surface morphology of the deposits was observed by SEM. pulse electrolysis has been effective on obtaining a smooth with high current efficiency comparing with D.C. electrolysis in trivalent chromium solution.

• Journal of Plant Biology
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• v.37 no.2
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• pp.245-252
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• 1994

Pollens of 20 species of Sedum were investigated with a scanning electron microscope. The pollen morphology of Sedum was rather variable, within particular species or even within a single inflorescence. Differences occurred in the number and shape of apertures and surface sculpture. Besides 3-colporate, various aperture types including 2-syncolporate, 3-syncolporate, 40stephanocolporate, 5-stephanocolporate, zonate, and irregular types were found in a single specimen. Also, striate-rugulose and psilate sculpture were found in S. viviparum. No correlation was found between the pollen morphology and the floral formula. Pollen characters appeared to be not useful for infrageneric classification of Korean Sedum.

• Proceedings of the Materials Research Society of Korea Conference
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• 1999.05a
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• pp.70-70
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• 1999

• Journal of Surface Science and Engineering
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• v.50 no.3
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• pp.183-191
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• 2017

In this study, surface morphology and mechanical property of TiN and DLC coated pedicle screw have been investigated by field-emission scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, vickers hardness test, axial gripping, and axial torsional gripping capacity test. From the EDS and XRD results, the composition and crystal structure of TiN and DLC coated surface were verified. The hardness value was increased by TIN and DLC coating, and the DLC coating surface has the highest value. The gripping capacity also showed higher value for TiN and DLC coated specimen than that of non-coated (Ti alloy) surface. The surface morphology of gripping tested specimen showed rougher scratched surface from Ti alloy than TiN and DLC coated layer.

• Journal of Surface Science and Engineering
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• v.31 no.6
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• pp.345-358
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• 1998

The evolution of surface roughness and morphology in epitaxial Si and $Si_{0.7}Ge{0.3}$ alloys grown by UHV opm-beam sputter deposition onto nominally-singular, [100]-, and [110]-mi-scut Si(001) was investigated by stomic force microscopy and trasmission electron microscopy. The evolution of surface roughness of epitaxial Si films grown at $300^{\circ}C$ is inconsistent with conventional scaling and hyperscaling laws for kineti roughening. Unstable growth leading to the formation of mounds separated by a well-defined length scale is observed on all substrates. Contraty to previous high-temperature growth results, the presence of steps during deposition at $300^{\circ}C$ increases the tendency toward unstable growth resulting in a much earlier development of mound structures and larger surface roughnesses on vicival substrates. Strain-induced surface roughening was found to dominate in $Si_{0.7}Ge{0.3}$ alloys grown on singular Si(001) substrates at $T_S\ge450^{\circ}C$ where the coherent islands are prererentially bounded along <100> directions and eshibt {105} facetting. Increasing the film thickness above critical values for strain relaxation leads to island coalescence and surface smoothening. At very low growth temperatures ($T_s\le 250^{\circ}C$), film surfaces roughen kinetically, due to limited adatom diffusiviry, but at far lower rates than in the higher-temperature strain-induced regime. There is an intermediate growth temperature range, however, over which alloy film surfaces remain extremely smooth even at thicknesses near critical values for strain relaxation.

• Journal of the Korean Society for Precision Engineering
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• v.25 no.9
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• pp.32-37
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• 2008

Freestanding hydride vapor phase epitaxy grown GaN(Gallium Nitride) substrates subjected to various polishing methods were characterized for their surface and subsurface conditions, Although CMP(Chemical Mechanical Polishing) is one of the best approaches for reducing scratches and subsurface damages, the removal rate of Ga-polar surface in CMP is insignificant($0.1{\sim}0.3{\mu}m$/hr) as compared with that of N-polar surface, Therefore, conventional MP(Mechanical Polishing) is commonly used in the GaN substrate fabrication process, MP of (0001) surface of GaN has been demonstrated using diamond slurries with different abrasive sizes, Diamond abrasives of size ranging from 30nm to 100nm were dispersed in ethylene glycol solutions and mineral oil solutions, respectively. Significant change in the surface roughness ($R_a$ 0.15nm) and scratch-free surface were obtained by diamond slurry of 30nm in mean abrasive size dispersed in mineral oil solutions. However, MP process introduced subsurface damages confirmed by TEM (Transmission Electronic Microscope) and PL(Photo-Luminescence) analysis.