• Title/Summary/Keyword: SSCG

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A Design of PLL and Spread Spectrum Clock Generator for 2.7Gbps/1.62Gbps DisplayPort Transmitter (2.7Gbps/1.62Gbps DisplayPort 송신기용 PLL 및 확산대역 클록 발생기의 설계)

  • Kim, Young-Shin;Kim, Seong-Geun;Pu, Young-Gun;Hur, Jeong;Lee, Kang-Yoon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.47 no.2
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    • pp.21-31
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    • 2010
  • This paper presents a design of PLL and SSCG for reducing the EMI effect at the electronic machinery and tools for DisplayPort application. This system is composed of the essential element of PLL and Charge-Pump2 and Reference Clock Divider to implement the SSCG operation. In this paper, 270MHz/162MHz dual-mode PLL that can provide 10-phase and 1.35GHz/810MHz PLL that can reduce the jitter are designed for 2.7Gbps/162Gbps DisplayPort application. The jitter can be reduced drastically by combining 270MHz/162MHz PLL with 2-stage 5 to 1 serializer and 1.35GHz PLL with 2 to 1 serializer. This paper propose the frequency divider topology which can share the divider between modes and guarantee the 50% duty ratio. And, the output current mismatch can be reduced by using the proposed charge-pump topology. It is implemented using 0.13 um CMOS process and die areas of 270MHz/162MHz PLL and 1.35GHz/810MHz PLL are $650um\;{\times}\;500um$ and $600um\;{\times}\;500um$, respectively. The VCO tuning range of 270 MHz/162 MHz PLL is 330 MHz and the phase noise is -114 dBc/Hz at 1 MHz offset. The measured SSCG down spread amplitude is 0.5% and modulation frequency is 31kHz. The total power consumption is 48mW.

A Spread Spectrum Clock Generator for SATA II with Rounded Hershey-Kiss Modulation Profile

  • Moon, Yong-Hwan;Lim, Wan-Sik;Kim, Tae-Ho;Kang, Jin-Ku
    • Journal of IKEEE
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    • v.15 no.2
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    • pp.129-133
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    • 2011
  • A spread spectrum clock generation is an efficient way to reduce electro-magnetic interference (EMI) radiation in modern mixed signal chip systems. The proposed circuit generates the spread spectrum clock by directly injecting the modulation voltage into the voltage-controlled oscillator (VCO) current source for SATA II. The resulting 33KHz modulation profile has a Hersey-Kiss shape with a rounded peak. The chip has been fabricated using $0.18{\mu}m$ CMOS process and test results show that the proposed circuit achieves 0.509% (5090ppm) down spreading at 1.5GHz and peak power reduction of 10dB. The active chip area is 0.36mm ${\times}$ 0.49mm and the chip consumes 30mW power at 1.5GHz.

Thickness-Dependent Properties of Undoped and Mn-doped (001) PMN-29PT [Pb(Mg1/3Nb2/3)O3-29PbTiO3] Single Crystals

  • Oh, Hyun-Taek;Joo, Hyun-Jae;Kim, Moon-Chan;Lee, Ho-Yong
    • Journal of the Korean Ceramic Society
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    • v.55 no.3
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    • pp.290-298
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    • 2018
  • In order to investigate the effect of thickness on the dielectric and piezoelectric properties of (001) PMN-29PT single crystals, three different types of PMN-29PT samples were prepared using the solid-state single crystal growth (SSCG) method: high density crystal [99%], low density crystal [95%], and high density crystal doped with Mn [98.5%]. When their thickness decreased from 0.5 mm to 0.05 mm, their dielectric constant ($K_3{^T}$), piezoelectric constants ($d_{33}$ and $g_{33}$), and electromechanical coupling factor ($k_t$) decreased continuously. However, their dielectric loss (tan ${\delta}$) increased. The addition of Mn to PMN-PT induced an internal bias electric field ($E_I$), increased the coercive electric field ($E_C$), and prevented local depoling. Therefore, Mn-doped PMN-PT crystals show high stability as well as high performance, even in the form of very thin plates (< 0.2 mm), and thus are suitable for application to high frequency composites, medical ultrasound probes, non-destructive testing devices (NDT), and flexible devices.

Dielectric and Piezoelectric Properties of "Lead-free" Piezoelectric Rhombohedral Ba(Ti0.92Zr0.08)O3 Single Crystals

  • Lee, Jong-Yeb;Oh, Hyun-Taek;Lee, Ho-Yong
    • Journal of the Korean Ceramic Society
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    • v.53 no.2
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    • pp.171-177
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    • 2016
  • Rhombohedral $Ba(Ti_{0.92}Zr_{0.08})O_3$ single crystals are fabricated using the cost-effective solid-state single crystal growth (SSCG) method; their dielectric and piezoelectric properties are also characterized. Measurements show that (001) $Ba(Ti_{0.92}Zr_{0.08})O_3$ single crystals have an electromechanical coupling factor ($k_{33}$) higher than 0.85, piezoelectric charge constant ($d_{33}$) of about 950 [pC/N], and piezoelectric voltage constant ($g_{33}$) higher than 40 [${\times}10^{-3}Vm/N$]. Especially the $d_{33}$ of (001) $Ba(Ti_{0.92}Zr_{0.08})O_3$ single crystals was by about six times higher than that of their ceramics. Because their electromechanical coupling factor ($k_{33}$) and piezoelectric voltage constant ($d_{33}$, $g_{33}$) are higher than those of soft PZT ceramics, it is expected that rhombohedral (001) $Ba(Ti_{0.92}Zr_{0.08})O_3$ single crystals can be used as "lead-free" piezoelectric materials in many piezoelectric applications such as actuator, sensor, and transducer.

Characterization of the Material Properties of 0.68Pb ($Mg_{1}$3/$Nb_{2}$3/)$O_3$-0.32PbT$iO_3$ Single Crystals Grown by the Solid-State-Crystal-Growth Method (고상단결정법으로 성장시킨 0.68Pb ($Mg_{1}$3/$Nb_{2}$3/)$O_3$-0.32PbT$iO_3$ 압전단결정의 물성평가)

  • 이상한;노용래
    • The Journal of the Acoustical Society of Korea
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    • v.23 no.2
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    • pp.103-108
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    • 2004
  • In this paper, all the materials constants of the PMN-32%PT single crystals grown by the solid state crystal growth method were measured by the resonance method. PMN-PT crystals of tetragonal symmetry have six elastic constants, three piezoelectric constants and two dielectric constants for their independent material constants. These materials constants were extracted from six sets of crystal samples of each different geometry to have different vibration modes respectively. Measured results showed that the crystal has larger electromechanical coupling factor k/sub 33/ (∼86%) and piezoelectric constant d/sub 33/ (∼1200pC/N) than conventional piezoceramics. Validity of the measurement was confirmed through comparison of the results with the impedance spectrum from finite element analysis of the samples and the results measured with a commercial do meter.

Effect of the Electrode Type on the Dielectric and Piezoelectric Properties of Piezoelectric PMN-PZT Single Crystals (압전 PMN-PZT 단결정의 유전 및 압전 특성에 미치는 전극 종류의 영향)

  • Lee, Jong-Yeb;Oh, Hyun-Taek;Choi, Kyoon;Lee, Ho-Yong
    • Journal of the Korean Ceramic Society
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    • v.52 no.1
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    • pp.77-82
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    • 2015
  • The effect of the electrode type on the dielectric and piezoelectric properties of $Pb(Mg_{1/3}Nb_{2/3})O_3-PbZrO_3-PbTiO_3$ (PMN-PZT) single crystals was investigated in an effort to improve their properties for various piezoelectric applications. First, three different types of PMN-PZT single crystals [PMN-PZT-A (piezoelectrically soft type; dielectric constant ~ 10,000), PMN-PZT-B (piezoelectrically soft type; phase-transition temperature between the rhombohedral and tetragonal phases ($T_{RT}$) ~ $145^{\circ}C$), PMN-PZT-C (piezoelectrically hard type; high mechanical quality factor ($Q_m$) ~ 1,000)] were fabricated using the solid-state single crystal growth (SSCG) method. Then, four different types of electrodes [sputtered Au, sputtered Cr/Au, sputtered Ti/Au, and fired Ag] were formed on the single crystals, and their dielectric and piezoelectric properties were measured. The single crystals with a sputtered Ti/Au electrode showed the highest dielectric and piezoelectric constants but the lowest coercive electric field ($E_C$). The single crystals with a fired Ag electrode showed the lowest dielectric and piezoelectric constants but the highest coercive electric field ($E_C$). This dependence on the type of electrode was most significant in the piezoelectrically hard PMN-PZT-C single crystals. However, the effects of the electrode type on the phase transition temperatures ($T_C$, $T_{RT}$) and dielectric loss were negligible. These results clearly demonstrate that it is important to select an appropriate electrode so as to maximize the dielectric and piezoelectric properties of single crystals in each type of piezoelectric application.

Effect of Mn on Dielectric and Piezoelectric Properties of 71PMN-29PT [71Pb(Mg1/3Nb2/3)O3-29PbTiO3] Single Crystals and Polycrystalline Ceramics

  • Oh, Hyun-Taek;Joo, Hyun-Jae;Kim, Moon-Chan;Lee, Ho-Yong
    • Journal of the Korean Ceramic Society
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    • v.55 no.2
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    • pp.166-173
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    • 2018
  • In order to investigate the effect of Mn on the dielectric and piezoelectric properties of PMN-PT [$Pb(Mg_{1/3}Nb_{2/3})O_3-PbTiO_3$], four different types of 71PMN-29PT samples were prepared using the solid-state single crystal growth (SSCG) method: (1) Undoped single crystals, (2) undoped polycrystalline ceramics, (3) Mn-doped single crystals, and (4) Mn-doped polycrystalline ceramics. In the case of single crystals, the addition of 0.5 mol% Mn to PMN-PT decreased the dielectric constant ($K_3{^T}$), piezoelectric charge constant ($d_{33}$), and dielectric loss (tan ${\delta}$) by about 50%, but increased the coercive electric field ($E_C$) by 50% and the electromechanical quality factor ($Q_m$) by 500%, respectively. The addition of Mn to PMN-PT induced an internal bias electric field ($E_I$) and thus specimens changed from piezoelectrically soft-type to piezoelectrically hard-type. This Mn effect was more significant in single crystals than in ceramics. These results demonstrate that Mn-doped 71PMN-29PT single crystals, because they are piezoelectrically hard and simultaneously have high piezoelectric and electromechanical properties, have great potential for application in fields of SONAR transducers, high intensity focused ultrasound (HIFU), and ultrasonic motors.

Mn-Modified PMN-PZT [Pb(Mg1/3Nb2/3)O3-Pb(Zr,Ti)O3] Single Crystals for High Power Piezoelectric Transducers

  • Oh, Hyun-Taek;Lee, Jong-Yeb;Lee, Ho-Yong
    • Journal of the Korean Ceramic Society
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    • v.54 no.2
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    • pp.150-157
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    • 2017
  • Three types of piezoelectric single crystals [PMN-PT (Generation I $[Pb(Mg_{1/3}Nb_{2/3})O_3-PbTiO_3]$), PMN-PZT (Generation II $[Pb(Mg_{1/3}Nb_{2/3})O_3-Pb(Zr,Ti)O_3]$), PMN-PZT-Mn (Generation III)] were grown by the solid-state single crystal growth (SSCG) method, and their dielectric and piezoelectric properties were measured and compared. Compared to (001) PMN-PT and PMN-PZT single crystals, the (001) PMN-PZT-Mn single crystals exhibited a higher transition temperature between the rhombohedral and tetragonal phases ($T_{RT}=144^{\circ}C$), as well as a higher coercive electric field ($E_C=6.3kV/cm$) and internal bias field ($E_I=1.6kV/cm$). The (011) PMN-PZT-Mn single crystals showed the highest coercive electric field ($E_C=7.0kV/cm$), and the highest stability of $E_C$ and $E_I$ during 60 cycles of polarization measurement. These results demonstrate that both Mn doping (for higher electromechanical quality factor ($Q_m$)) and a (011) crystallographic orientation (for higher coercive electric field and stability) are necessary for high power transducer applications of these piezoelectric single crystals. Specifically, the (011) PMN-PZT-Mn single crystal (Gen. III) had the highest potential for application in the fields of SONAR transducers, high intensity focused ultrasound (HIFU), ultrasonic motors, and others.

"Lead-free" Piezoelectric Ba(Ti0.94Zr0.06)O3 Single Crystals with Electromechanical Coupling Factor (k33) Higher Than 0.8 (0.8 이상의 전기기계결합계수(k33)를 가지는 고효율 무연 압전 Ba(Ti0.94Zr0.06)O3 단결정)

  • Lee, Jong-Yeb;Oh, Hyun-Taek;Lee, Ho-Yong
    • Journal of the Korean Ceramic Society
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    • v.51 no.6
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    • pp.623-628
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    • 2014
  • Orthorhombic $Ba(Ti_{0.94}Zr_{0.06})O_3$ single crystals are fabricated using the cost-effective solid-state single crystal growth (SSCG) method; their dielectric and piezoelectric properties are also characterized. Measurements show that (001) $Ba(Ti_{0.94}Zr_{0.06})O_3$ single crystals have an electromechanical coupling factor ($k_{33}$) higher than 0.83, piezoelectric charge constant ($d_{33}$) of about 400 [pC/N], and piezoelectric voltage constant ($g_{33}$) higher than 50 [${\times}10^{-3}Vm/N$]. The transition temperature ($T_{OT}$) of the (001) $Ba(Ti_{0.94}Zr_{0.06})O_3$ single crystals between orthorhombic and tetragonal phases is also observed to be about $61^{\circ}C$. Because their electromechanical coupling factor ($k_{33}$) and piezoelectric voltage constant ($g_{33}$) are higher than those of soft PZT ceramics, it is expected that (001) $Ba(Ti_{0.94}Zr_{0.06})O_3$ single crystals can be used as "lead-free" piezoelectric materials in many piezoelectric applications.