• Journal of the Korean Ceramic Society
• /
• v.40 no.4
• /
• pp.375-379
• /
• 2003

In this paper, a novel design of multilayer ceramic-based Transmit/Receive (T/R) switch using Low Temperature Co-fired Ceramic (LTCC) technology have been presented. Compact T/R switch has been designed by transforming quarter-wave transmission line to its lumped equivalent circuit. Especially, high-Q three dimensional inductors with double strip have been proposed and incorporated. The proposed inductor has been modeled by multi-conductor coupled lines. A measured inductor quality factor (Q) of 80 and a Self-Resonance Frequency (SRF) of 6.6 GHz have been demonstrated. The inductor library has been incorporated into the design of WCDMA T/R switch.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.04b
• /
• pp.69-71
• /
• 2009

Meander 형태의 인덕터를 각각 산화마그네슘 (MgO)기판과 산화 알루미늄 ($Al_2O_3$) 기판 위에 구현하여 고주파 특성을 구조 시뮬레이션을 통해 연구하였다. 고주파 시뮬레이션을 통해서 적절한 구조의 meander 형태의 인덕터를 선정하여 시뮬레이션을 수행하였다. 시뮬레이션시 사용된 알루미늄 상부전극은 길이 282 nm, 폭 45 nm, 두께 100 nm, 간격은 15 nm의 구조 였으며, 5, 7, 9, 11, 13턴의 meander 형태 인덕터 소자들을 이용하여 고주파 수동소자 응용을 위한 고주파 구조 시뮬레이션을 50 MHz에서부터 30 GHz까지 수행하였다. 주파수에 따른 인덕턴스와 품질계수를 등가회로를 이용하여 계산하였다. 시뮬레이션으로부터 자기공진주파수 (SRF, self resonance frequency)가 인덕터의 턴 수가 증가함에 따라 저주파 영역으로 이동하는 것을 확인하였고, 고주파 시뮬레이션 결과에서 산란 매개변수 (S-parameter, $S_{21}$)로부터 인덕턴스와 품질계수를 추출해내었다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.22 no.7
• /
• pp.683-693
• /
• 2011

In this paper, a design of high current and broad-band microwave bias-tee was presented for a stable bias of a high power amplifier. An input impedance of bias-tee should be shown to 50 ohm with the wideband in order to be stably-biased the amplifier. For this design of the bias-tee, a capacitor of bias-tee for a DC block was designed with a high wide-band admittance by a parallel sum of capacitors, and a inductor for a RF choke and a DC feeding was designed with a high wide-band impedance by a series sum of inductors. As this inductor and capacitor for the sum has each SRF, band-limitation of lumped element was driven from SRF. This limitation was overcome by control of a resonance's quality factor with adding a resistor. 1608 SMD chips for design's element was mounted on the this pattern for the designed bias-tee. The fabricated bias-tee presented 10 dB of return loss and wide-band about 50 ohm input impedance at 10 MHz~10 GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.24 no.2
• /
• pp.152-160
• /
• 2013

In this paper, to the aim of wideband SSN(Simultaneous Switching Noise) suppression characteristic, investigation of spiral resonator are used in conjunction with bead which is commonly used for noise suppression method. Bead works effectively to suppress the power noise up to the first harmonic of fundamental frequency, 0.8 GHz, and spiral resonator suppress noise well in the frequency range of SRF(Self Resonance Frequency) which is inversely proportional to the length of spiral. Thus, when bead used in conjunction with a spiral the noise suppression characteristic is determined by the one of higher impedance element of the two in the frequency range and achieves more broadband filtering characteristic. The case for using 22 nH bead turns out 4.8, 2.0, 0, and, 0.6 dB, and the case for using 22 nH bead in conjunction with 3-turns spiral achieves more wideband characteristic of 9.5, 8.3, 6.1, and 9.9 dB power noise suppression performances at the first, second, third, and fourth harmonics, respectively. The peak-to-peak voltage levels decrease from 76 mV to 56 mV using 22 nH bead, and the level decrease rapidly to 34 mV when using in conjunction with bead and 3-turn spiral. Thus more wideband SSN suppression characteristic can be achieved using bead with spiral.