• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1366-1367
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• 2006

Embedded capacitor technology is one of the effective packaging technologies for further miniaturization and higher performance of electric package systems. So we used the 3D EM simulator for embedded capacitor design in 8-layed PCB(Printed Circuit Board). The designed capacitors value are 2 pF, 5pF, 10 pF, respectly. we investigated characteristics of capacitance - frequency and SRF(Self Resonance Frequency) as changing the rate of hight and width of upper pad of embedded capacitors.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2003.11a
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• pp.178-182
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• 2003

This paper presents the embedded inductors in PCB (Printed Circuit Board) for PAM(Power Amplifier Module) of mobile terminations. The inductors are designed, simulated, and compared to conventional chip inductors. The Quality factor(Q) and self-resonance frequency(SRF) of the inductors are evaluated. The quality factors of the inductors are two times higher than those of the chip inductors, and the self-resonance frequency is 1.3 times higher than those of chip inductors at the inductance of 2.7 nH and 3.3 nH respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.12
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• pp.1359-1364
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• 2012

The C-band semi-lumped lowpass filter with broad stopband and compact size characteristic using chip inductor is proposed. To provide an additional attenuation pole in stopband by SRF, a separable inductor is added to proposed structure, and it has broad stopband characteristic. The third order elliptic function lowpass filter with chip inductor(L: 9.1 nH, SRF: 5.5 GHz, Q: 25) has insertion loss of 0.38 dB, cutoff frequency of 920 MHz, broad stopband(below 20 dB) of 1.43~7.8 GHz and the size is reduced 37.4 % compared to distributed inductor.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.3
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• pp.1284-1287
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• 2012

In this study, we propose the structures of octagonal spiral planar inductors without underpass and via, and confirm the frequency characteristics. The structures of inductors have Si thickness of $300{\mu}m$, $SiO_2$ thickness of $7{\mu}m$. The width of Cu coils and the space between segments have $20{\mu}m$, respectively. The number of turns of coils have 3. The performance of spiral planar inductors was simulated to frequency characteristics for inductance, quality-factor, SRF(Self- Resonance Frequency) using HFSS. The octagonal spiral planar inductors have inductance of 2.5nH over the frequency range of 0.8 to 1.8 GHz, quality-factor of maximum 18.9 at 5 GHz, SRF of 11.1 GHz. Otherwise, square spiral planar inductors have inductance of 2.8nH over the frequency range of 0.8 to 1.8 GHz, quality-factor of maximum 18.9 at 4.9 GHz, SRF of 10.3 GHz.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.9
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• pp.4101-4106
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• 2011

In this study, we propose that the structures of 2-layer spiral planar inductors have a lower spiral coil and via increasing inductance in limited possession are and confirm the frequency characteristics. The structures of inductors have Si thickness of $300{\mu}m$, $SiO_2$ thickness of $7{\mu}m$. The width of Cu coils and the space between segments have $20{\mu}m$, respectively. The number of turns of coils have 3. The performance of spiral planar inductors was simulated to frequency characteristics for inductance, quality-factor, SRF(Self- Resonance Frequency) using HFSS. The 2-layer spiral planar inductors have inductance of 3.2nH over the frequency range of 0.8 to 1.8 GHz, quality-factor of maximum 8.2 at 2.5 GHz, SRF of 5.8 GHz. Otherwise, 1-layer spiral planar inductors have inductance of 1.5nH over the frequency range of 0.8 to 1.8 GHz, quality-factor of maximum 18 at 8 GHz, SRF of 19.2 GHz.

• Journal of IKEEE
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• v.12 no.3
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• pp.138-143
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• 2008

In this study, we propose that the structures of spiral inductors have the environment advantage utilizing direct-write and LAM(Laser Ablation of Microparticles) processes without process step of lithography and etching etc. of existing semiconductor process. The structures of inductors have Si thickness of 540${\mu}m$, $SiO_2$ thickness of 3${\mu}m$. The width of Cu coils and the space between segments have 30${\mu}m$, respectively, using for direct-write and LAM processes. The performance of spiral planar inductors was simulated to frequency characteristics for inductance, quality-factor, SRF(Self- Resonance Frequency) using HFSS. The inductors without underpass and via have inductance of 1.11nH over the frequency range of 300 to 800 MHz, quality-factor of maximum 38 at 5 GHz, SRF of 18 GHz. Otherwise, inductors with underpass and via have inductance of 1.12nH over the frequency range of 300 to 800 MHz, quality-factor of maximum 35 at 5 GHz, SRF of 16 GHz.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.17 no.2
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• pp.110-113
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• 2008

Embedded capacitor technology is one of the effective packing technologies for further miniaturization and higher performance of electric packaging system. In this paper, the embedded capacitors were simulated and fabricated in 8-layered printed circuit board employing standard PCB processes. The composites of barium titanante($BaTiO_3$) powder and epoxy resin were employed for the dielectric materials in embedded capacitors. Theoretical considerations regarding the embedded capacitors have been paid to understand the frequency dependent impedance behavior. Frequency dependent impedance of simulated and fabricated embedded capacitors was investigated. Fabricated embedded capacitors have lower self resonance frequency values than that of the simulated embedded capacitors due to the increased parasitic inductance values. Frequency dependent capacitances of fabricated embedded capacitors were well matched with those of simulated embedded capacitors from the 100MHz to 10GHz range. Quality factor of 20 was observed and simulated at 2GHz range in the 10 pF embedded capacitors. Temperature dependent capacitance of fabricated embedded capacitors was presented.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.12 s.354
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• pp.75-82
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• 2006

In this paper, we design the meander line inductors with high sensitivity and high quality factor(Q) using high characteristic impedance of aperture ground plate. Sensitivity as a frequency is new defined by variation of effective inductance per analysis frequency range instead of self resonance frequency (SRF). An equivalent lumped circuit is derived to explain the characteristic of high frequency inductor. The 4 nH meander line inductor with aperture ground plate has 0.45 nH/GHz of good sensitivity and 86 of Q at 0.7 GHz.

• Proceedings of the KIEE Conference
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• 2015.07a
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• pp.125-126
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• 2015

통신 시스템에서의 더 늘어난 대역폭(Band Width)의 수요로 인해 집적회로(Integrated Circuit)에서 더 높은 동작 주파수(Operating Frequency)를 필요로 하게 되었다. 고주파 영역에서는 SRF(Self Resonance Frequency) 문제와 소자 값의 정확성(Accuracy)에 대한 문제 때문에 정수소자(Lumped Element)를 이용하여 해석을 할 수 없으며 이로 인하여 어떠한 회로의 전기적 특성을 평가함에 있어서 전송선로(Transmission Line)를 이용하여 해석을 하는 것은 중요한 역할을 하게 되었다. 이러한 해석을 위해 순수한 내부 특성을 얻기 위하여 디 임베딩(De-Embedding)이라는 기법이 사용되고 있으나, 알려진 몇 가지의 방법들은 인터커넥터 부분을 완벽히 나타내지 못한다. 따라서 본 논문에서는 1-Port 측정을 기반으로 한 8-Term Error을 이용한 디 임베딩(De-Embedding) 방법을 이용하여 넓은 주파수 영역에서의 교정 값을 얻는 방법에 대하여 소개하고자 한다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.4
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• pp.384-393
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• 2013

In this paper, a design of planar microwave bias-tee using lumped elements was presented. The bias-tee is composed of 2 blocks; DC block and RF choke. For this design of the bias-tee, a wideband capacitor was used for DC block. For a RF choke, a series connection of inductors which have different SRFs is used for a RF choke. In the RF choke, a series connection of resistor and capacitor was added in shunt to eliminate a loss from a series resonance. The designed bias-tee was implemented by using 1608 SMT chip components. The fabricated bias-tee was measured using Anritsu 3680K fixture which enables to remove an effect of a connector. The fabricated bias-tee presented -15 dB of return loss and -1.5 dB insertion loss at 10 MHz~18 GHz.