• Korean Journal of Radiology
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• 제22권3호
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• pp.395-404
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• 2021

Objective: To compare the utility of computed tomography perfusion (CTP) and three different 4-point scoring systems in computed tomography angiography (CTA) in confirming brain death (BD) in patients with and without skull defects. Materials and Methods: Ninety-two patients clinically diagnosed as BD using CTA and/or CTP for confirmation were retrospectively reviewed. For the final analysis, 86 patients were included in this study. Images were re-evaluated by three radiologists according to the 4-point scoring systems that consider the vessel opacification on 1) the venous phase for both M4 segments of the middle cerebral arteries (MCAs-M4) and internal cerebral veins (ICVs) (A60-V60), 2) the arterial phase for the MCA-M4 and venous phase for the ICVs (A20-V60), 3) the venous phase for the ICVs and superior petrosal veins (ICV-SPV). The CTP images were independently reviewed. The presence of an open skull defect and stasis filling was noted. Results: Sensitivities of the ICV-SPV, A20-V60, A60-V60 scoring systems, and CTP in the diagnosis of BD were 89.5%, 82.6%, 67.4%, and 93.3%, respectively. The sensitivity of A20-V60 scoring was higher than that of A60-V60 in BD patients (p < 0.001). CTP was found to be the most sensitive method (86.5%) in patients with open skull defect (p = 0.019). Interobserver agreement was excellent in the diagnosis of BD, in assessing A20-V60, A60-V60, ICV-SPV, CTP, and good in stasis filling (κ: 0.84, 0.83, 0.83, 0.83, and 0.67, respectively). Conclusion: The sensitivity of CTA confirming brain death differs between various proposed 4-point scoring systems. Although the ICV-SPV is the most sensitive, evaluation of the SPV is challenging. Adding CTP to the routine BD CTA protocol, especially in cases with open skull defect, could increase sensitivity as a useful adjunct.

• 한국전기전자재료학회논문지
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• 제14권2호
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• pp.99-103
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• 2001

We present a detailed of the interband transitions of InAs/GaAs self-organized quantum dots(QDs) based on surface photovoltage(SPV), photoreflactance(PR) and photoluminescence(PL) spectroscopies. At room temperature, interband absorption transitions of QDs have been observed by using SPV spectrum, which clearly exhibits three well-resolved absorption transitions of QDs have been observed by using SPV spectrum, which clearly exhibits three well-resolved absorption peaks. The absorption line shape is Gaussian-like. Furthermore, the corresponding interband transitions are also observed in PR and PL experiments at 77K.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.578-581
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• 2001

Silicon wafers using DRAM devices required for high cleaning technology and this cleaning technology was evaluated by defect level or electron life time. This paper examined the correlation of SPV(Surface Photo Voltaic Analyzer) which analyzes diffusion length of minority carriers and DLTS(Deep level Transient Spectroscope) which analyzes defect level.

• 월간포장계
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• 통권157호
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• pp.94-99
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• 2006

• 대한물리의학회지
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• 제12권3호
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• pp.33-42
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• 2017

PURPOSE: To compare postural vertical training with and without visual feedback for improving functional recovery in post-stroke hemiparesis patients with pusher syndrome. METHODS: This study used a single-subject research with alternating design with multiple baselines. Three patients with hemiparetic post-stroke diagnosed with pusher syndrome were selected from the inpatients at the department of physical therapy of a local rehabilitation hospital. For subjective postural vertical (SPV) training with and without visual feedback, an alternating treatment was used. The subjects were randomly selected using the sequence of the two training methods upon starting the intervention, and then the training was alternated. SPV training was performed twice a day, once in the morning and again in the afternoon. Scale for contraversive pushing (SCP), postural assessment scale for stroke, and Barthel index score were used to determine the intervention-related changes. RESULTS: Compared to the average score at baseline, the average SCP score for the SPV training without visual feedback decreased from 5.3 to 2.8, from 4.6 to 3, and from 3.5 to 2.7 for subjects 1, 2, and 3, respectively. However, the average score for the SPV training with visual feedback decreased from 5.3 to 3.1, from 4.6 to 3.5, and from 3.5 to 3.3 for subjects 1, 2, and 3, respectively. CONCLUSION: Postural vertical training without visual feedback may be more beneficial than postural vertical training with visual feedback for improving pushing behavior and functional activity in stroke patients with pusher syndrome.

• 한국재료학회지
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• 제11권8호
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• pp.655-660
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• 2001

Metalorganic chemical vapor deposition (MOCVD)으로 성장한 $In_{0.5}$ ($Gal_{1-x}$ $Al_{x}$ )0.5P/GaAS 이중 이종접합 구조의 특성을 표면 광전압 (surface Photovoltage ; SPV) 측정으로 연구하였다. $In_{0.5}$($Gal_{1-x}$ $Al_{x}$ )0.5P/GaAS 이중 이종접합 구조의 SPV 측정값을 Lorentzian 피팅한 띠 간격에너지 ($E_{0}$ ) 값과 조성비 (x)로 구한 이론 값이 잘 일치하였다. 그리고 변조 주파수 의존성을 측정한 결과 SPV 신호의 형태는 변하지 않고, 신호의 크기만이 변하는 것은 광 조사에 따른 전기적 상태의 과도 현상에 따른 것이고, GaAs와 InGaAlP의 특성시간의 차이는 광 캐리어의 수명의 차이로 분석된다. 그리고 온도 의존성 측정으로 $In_{0.5}$ /($Gal_{1-x}$ $Al_{x}$ )0.5P/GaAS 이중 이종 접합 시료의 균일한 변형분포와 계면상태가 양호함을 알 수 있었다.

• 한국진공학회지
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• 제10권1호
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• pp.81-86
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• 2001

반절연성 GaAs(100) 기판 위에 MOVCD법으로 In의 조성비(x)를 0.03으로 일정하게 하여 성장시킨 $IN_{0.03}Ga_{0.97}$As/GaAs 에피층의 표면 광전압 특성을 연구하였다. 기판과 에피층의 SPV 신호가 잘 분리되어 관측되었으며, InGaAs 띠 간격 에너지(Eo)는 1.376 eV로서 Pan등이 제안한 조성비 식을 이용하여 계산한 결과 조성비(x=0.03)와 잘 일치하였다. 주파수가 증가할 수록 시료의 표면 광전압은 감소하였으며, 이는 광응답시간이 짧아져 캐리어 이동도가 감소하기 때문이다. 그리고, 온도 의존성 측정으로부터 Varshni 및 온도 계수를 구하였다. 에칭된 시료의 스펙트럼에서 $E_o$(GaAs) 신호 아래에 나타나는 'A' 신호는 시료 성장시 존재하는 carbon 불순물에 기인한 것이다.

• 한국진공학회지
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• 제8권4A호
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• pp.403-409
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• 1999

The surface state of Ar plasma-exposed Fe doped SI-InP have been investigated by photoreflectance (PR). From Ar plasma-exposed InP with 30 W for 10sec, the PR signals include a peak $(E_{Ar})$ that is located at 1.336 eV. We think that this peak was originated shallow level related to $V_In-V_P$. And we compared this level with the level obtained by surface photovoltage spectroscopy (SPV) measurement. The result of the PR agrees well with that from SPV. Additionally, Ar plasma induced phosphorus vacancy is related to shallow level. Therefore, the change of surface electric field are attributed to the shallow level. This level is caused by the existence of phsophorus vacancy on InP surface.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1995년도 추계 학술발표 강연 및 논문개요집
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• pp.32-33
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• 1995

고집적 회로 제작에 사용되는 P-형 실리콘 웨이퍼 내부에 존재하는 금속불순물을 소수캐리어의 여기변화 등을 이용하는 정성적인 SPV 측정과 정량적인 DLTS 측정을 통해서 비교, 분석하였다. 반도체공정상 중요한 오염원이며, 분석이 쉬운 Fe을 주 오염원으로 하여 분석한 결과 SPV와 DLTS에 의한 Fe는 상호연관관계가 성립하며, p-형 실리콘 웨이퍼내의 Fe, FeB 거동을 20$0^{\circ}C$ quenching으로 관찰할 수 있었으며, 각각의 에너지준위는 0.45 및 0.11eV 임을 확인하였다.

• 대한기계학회논문집
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• 제14권1호
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• pp.96-102
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• 1990

본 연구에서는 압력용기 소재인 SPV 50Q와 고압강관 소재로 사용하는 SPV 50Q 와 고압강간 소재로 사용하는 API 5A-K55에서의 표면균열의 표면방향과 깊이방향 또한 두께 평균에 대한 균열열림을 스트레인 게이지와 CMOD(Crack Mouth Opening Displace- ment)게이지를 이용하여 측정 비교하였다. 또한 표면균열의 균열 열림하중을 측정위 치에 따라 평가하고, 본연구에 사용한 두 소재에 대해 균열 열림을 고려한 표면균열 진전평가가 각 방향에 대해 이루어졌다.