• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.6
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• pp.685-694
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• 2015

In this paper, a new dynamic reference scheme is proposed to improve the read voltage margin better than the previous static reference scheme. The proposed dynamic reference scheme can be helpful in compensating not only the background pattern dependence but also the cell position dependence. The proposed dynamic reference is verified by simulating the CMOS-memristor hybrid circuit using the practical CMOS SPICE and memristor Verilog-A models. In the simulation, the percentage read voltage margin is compared between the previous static reference scheme and the new dynamic reference scheme. Assuming that the critical percentage of read voltage margin is 5%, the memristor array size with the dynamic scheme can be larger by 60%, compared to the array size with the static one. In addition, for the array size of $64{\times}64$, the interconnect resistance in the array with the dynamic scheme can be increased by 30% than the static reference one. For the array size of $128{\times}128$, the interconnect resistance with the proposed scheme can be improved by 38% than the previous static one, allowing more margin on the variation of interconnect resistance.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.15 no.3
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• pp.1700-1706
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• 2014

In this paper, a step down converter for LED backlight of mobile application has been proposed. The converter which is operated with 4 MHz high switching frequency is capable of reducing mounting area of passive devices consists of a power stage and a control block. Circuit elements of the power stage are inductor, output capacitor, MOS transistors and feedback resistors. The control block consists of pulse width modulator, error amplifier and oscillator etc. Proposed step down converter has been designed and verified using a $0.35{\mu}m$ 1-poly 4-metal BCD process technology. Simulation results show that the output voltage is 1.8 V in 3.7 V input voltage, output current 100 mA which is larger than 25 ~ 50 mA in conventional 500 KHz driven converter when the duty ratio is 0.4.

• The Journal of the Korea institute of electronic communication sciences
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• v.12 no.2
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• pp.273-280
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• 2017

As massive integration technology of transistors has been developing, multi-core circuit is fabricated on a silicon chip and a clock frequency is getting faster to meet the system requirement. But increasing the clock frequency can induce some problems to violate the operation of system such as clock synchronization, so it is very import to avoid metastability events to design digital chips. In this paper, metastability windows are measured by bisection method in H-spice depending on temperature, supply voltage, and the size of transmission gate with D-FF designed with 180nm CMOS process. The simulation results show that the metastability window(: MW) is slightly increasing to temperature and supply voltage, but is quadratic to the area of a transmission gate, and the best area ration of P and Ntransitor in transmission gate is P/N=4/2 to get the least MW.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.12
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• pp.65-72
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• 2008

This paper proposes a new dual-loop digital PLL(DPLL) using seamless frequency tracking methods. The dual-loop construction, which is composed of the coarse and fine loop for fast locking time and a switching noise suppression, is used successive approximation register technique and TDC. The proposed DPLL in order to compensate the quality of jitter which follows long-term of input frequency is newly added cord conversion frequency tracking method. Also, this DPLL has VCO circuitry consisting of digitally controlled V-I converter and current-control oscillator (CCO) for robust jitter characteristics and wide lock range. The chip is fabricated with Dongbu HiTek $0.18-{\mu}m$ CMOS technology. Its operation range has the wide operation range of 0.4-2GHz and the area of $0.18mm^2$. It shows the peak-to-peak period jitter of 2 psec under no power noise and the power dissipation of 18mW at 2GHz through HSPICE simulation.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.3 s.345
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• pp.21-32
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• 2006

A new SRAM circuit with row-by-row activation and low-swing write schemes is proposed to reduce switching power of active cells as well as leakage one of sleep cells in this paper. By driving source line of sleep cells by $V_{SSH}$ which is higher than $V_{SS}$, the leakage current can be reduced to 1/100 due to the cooperation of the reverse body-bias. Drain Induced Barrier Lowering (DIBL), and negative $V_{GS}$ effects. Moreover, the bit line leakage which may introduce a fault during the read operation can be eliminated in this new SRAM. Swing voltage on highly capacitive bit lines is reduced to $V_{DD}-to-V_{SSH}$ from the conventional $V_{DD}-to-V_{SS}$ during the write operation, greatly saving the bit line switching power. Combining the row-by-row activation scheme with the low-swing write does not require the additional area penalty. By the SPICE simulation with the Berkeley Predictive Technology Modes, 93% of leakage power and 43% of switching one are estimated to be saved in future leakage-dominant 70-un process. A test chip has been fabricated using $0.35-{\mu}m$ CMOS process to verify the effectiveness and feasibility of the new SRAM, where the switching power is measured to be 30% less than the conventional SRAM when the I/O bit width is only 8. The stored data is confirmed to be retained without loss until the retention voltage is reduced to 1.1V which is mainly due to the metal shield. The switching power will be expected to be more significant with increasing the I/O bit width.