• Proceedings of the KWS Conference
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• 1996.05a
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• pp.214-216
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• 1996

• Journal of Korean Society of Steel Construction
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• v.16 no.1 s.68
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• pp.33-42
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• 2004

Making use of SN steel in the building structure should be a prerequisite to adopt the design strength of said steel. As a preceding study, the material properties of STKN400B/490B tubes and SPAP235/325 and SPAR295 square pipes manufactured using SN400B/490B plates were evaluated. Compared with the yield and ultimate strengths of SN400B/490B plates, those of STKN400B/490B tubes increase. Nonetheless, the yield and ultimate strengths of STKN400B/490B tubes satisfied the design codes of STKN400B/490B tubes even though the tubes were fabricated via roll bending or press forming. On the other hand, the yield and ultimate strengths at the edges of SPAP235/325 square pipes did not satisfy the design codes based on the values at the sides. The maximum tensile and compressive residual stresses at the SN490B tube were equal to and 40% of the yield strength of the SN490B plate, respectively, In the case of the SPAP325 square pipe, both the maximum tensile and compressive residual stresses were 80% of the yield strength of the SN490B plate. The axial compressive loaded column test results snowed that the buckling strengths were not very different regardless of the mode of fabrication of STKN490B tunes. i.e., through roll bending or press forming. On the other hand, the buckling strength of the SPAP325 square pipe was higher than that of the built-up square pipe.

• Proceedings of the KWS Conference
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• 2002.10a
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• pp.714-719
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• 2002

In The Great Hanshin-Awaji Earthquake, the general yield brittle fractures were observed in beam-column connections of steel building frames. Among many influencing factors which affect the general yield brittle fracture, it can be considered that fracture toughness has substantial effects. Some studies are making clear the required toughness for the base metal and the weld metal, but general values are not proposed. Moreover, it seems that it is also important to pay attention to the toughness decrease in the weld heat affected zone (weld HAZ), because the toughness decrease occurs in the HAZs of mild steel. In this paper, the relationship between toughness of simulated HAZs of "the rolled steels for building structures (SN)" and the weld heat-input limit of the SN steel are investigated, in an attempt to provide the required toughness for HAZs. The relationships between the increase of the hardness value and toughness, and changes of microstructure after weld heat-input are also discussed. The main results are summarized as follows. 1) The SN400B can keep its toughness at higher heat-inputs compare to the SN490Bs. 2) The steel grade, which becomes harder than other steel grades at the same heat-input, has smaller absorbed energy and smaller limit of heat-input. 3) The weld heat-input limit of the SN400B and the SN490B are proposed separately for some required toughness values.

• Solar Energy
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• v.18 no.2
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• pp.137-144
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• 1998

Tin oxide films deposited by spray pyrolysis have defects and preferred orientations according to the temperature of substrate. The growth of crystalline deposits began at the substrate temperature of $300^{\circ}C$. With increasing substrate temperature the plane (200) groved preferentially and above $400^{\circ}C$, planes of higher indices. Grain size increased with increasing substrate temperature up to $400^{\circ}C$. Undoped film is composed of Sn and O, and contains oxygen vacancies. Film doped with antimony has defects such as oxygen vacancies, antimony substituted on Sn and chlorine on oxygen.

• Journal of the Korean institute of surface engineering
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• v.36 no.5
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• pp.386-392
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• 2003

The electroplating process for a solder bump which can be applied for a flip chip was studied. Si-wafer was used for an experimental substrate, and the substrate were coated with UBM (Under Bump Metallization) of Al(400 nm)/Cu(300 nm)Ni(400 nm)/Au(20 nm) subsequently. The compositions of the bump were Sn-Cu and eutectic Sn-Pb, and characteristics of two bumps were compared. Experimental results showed that the electroplated thickness of the solders were increased with time, and the increasing rates were TEX>$0.45 <\mu\textrm{m}$/min for the Sn-Cu and $ 0.35\mu\textrm{m}$/min for the Sn-Pb. In the case of Sn-Cu, electroplating rate increased from 0.25 to $2.7\mu\textrm{m}$/min with increasing current density from 1 to 8.5 $A/dm^2$. In the case of Sn-Pb the rate increased until the current density became $4 A/dm^2$, and after that current density the rate maintains constant value of $0.62\mu\textrm{m}$/min. The electro plated bumps were air reflowed to form spherical bumps, and their bonded shear strengths were evaluated. The shear strength reached at the reflow time of 10 sec, and the strength was of 113 gf for Sn-Cu and 120 gf for Sn-Pb.

• Journal of the Korean Institute of Telematics and Electronics
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• v.13 no.2
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• pp.23-27
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• 1976

$Si{\cdot}SnO_{2}$ heterojunction was prepared by oxidzing at oxygen atmosphere $SnO_{2-X}$ Which made by Flith evaporation of $SnO_{2}$ powder on III surface of p and n type Si single crystals. The energy band Profile of $Si{\cdot}SnO_{2}$ heterojunction was depicted from its physical properties. This heterojunction was very good rectifying junction, very sensitive in spectral response of Photovoltage at from 400nm to 1200nm, and -10$^{18}$sec of time contant. From above properties, this heterojunction was found ps good high speed photovoltaic device and solar cell.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.4
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• pp.39-46
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• 2003

Sn-Cu eutectic solder bump was fabricated by electroplating for flip chip and its characteristics were studied. A Si-wafer was used as a substrate and the UBM(Under Bump Metallization) of Al(400 nm)/Cu(300 nm)/Ni(400 nm)/Au(20 nm) was coated sequentially from the substrate to the top by an electron beam evaporator. The experimental results showed that the plating ratio of the Sn-Cu increased from 0.25 to 2.7 $\mu\textrm{m}$/min with the current density of 1 to 8 A/d$\m^2$. In this range of current density the plated Sn-Cu maintains its composition nearly constant level as Sn-0.9∼1.4 wt%/Cu. The solder bump of typical mushroom shape with its stem diameter of 120 $\mu\textrm{m}$ was formed through plating at 5 A/d$\m^2$ for 2 hrs. The mushroom bump changed its shape to the spherical type of 140 $\mu\textrm{m}$ diameter by air reflow at $260^{\circ}C$. The homogeneity of chemical composition for the solder bump was examined, and Sn content in the mushroom bump appears to be uneven. However, the Sn distributed more uniformly through an air reflow.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.766-772
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• 1996

Undoped $SnO_x$ thin films were deposited on Si(100) substrate by using reactive ioassisted deposition technique (R-IAD). In order to investigate the effect of initial oxygen content and heat treatment on the oxidation state and crystalline structure of tin oxide films, $SnO_x$ thin films were post-annealed at 400~$600^{\circ}C$ for 1 hr. in a vacuum ~$5 \times 10^{-3}$ -3/ Torr or were directly deposited on the substrate of $400^{\circ}C$ and the relative arrival ration ($Gamma$) of oxygen ion to Sn metal varied from 0.025 to 0.1, i.e., average impinging energy ($E_a$) form 25 to 100 eV/atom. As $E_a$ increased, the composition ratio of $N_ON{sn}$ changed from 1.25 to 1.93 in post-annealing, treatment and 1.21 to 1.87 in in-situ substrate heating. In case of post-annealing, the oxidation from SnO to $SnO_2$ was closely related to initial oxygen contents and post-annealing temperature, and the perfect oxidation of $SnO_2$ in the film was obtained at higher than $E_a$=75 eV/atom and $600^{\circ}C$. The temperature for perfect oxidation of $SnO_2$ was reduced as low as $400^{\circ}C$ through in-situ substrate heating. The variation of the chemical state of $SnO_x$ thin films with changing $E_a$'s and heating method were also observed by Auger electron spectroscopy.

• Solar Energy
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• v.15 no.2
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• pp.91-99
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• 1995

The influence of deposition parameters on the deposition of $SnO_2$ thin films by spray pyrolysis has been studied. In the case of spray solution with tile concentration of 0.01M, at low deposition temperature the deposition was controlled by surface reaction and portion controlled by mass transfer is increased with increasing deposition temperature to $400^{\circ}C$. Above $400^{\circ}C$, the deposition is controlled by mass transfer at low spray pressure, and by surface reaction at high spray pressure. As the concentration of spray solution increased the deposition rate increased, and in this experiment the deposition depends on the Rideal-Eley mechanism. The deposition rate increased with increasing substrate temperature up to $400^{\circ}C$ and then decreased due to homogeneous nucleation. The thickness of the deposit increased with increasing spray duration, and the adhesion between substrate and deposit was formed physically.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.2
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• pp.276-283
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• 1997

A dry impregnation method was used for preparing pellet type Pt/$SnO_2$ gas sensor. The crystal structure, direction of the crystal, crystal size and microstructure between the catalyst and the support ($SnO_2$) were characterized with electron diffraction analysis, transmission electron microscopy, scanning electron microscopy. The characterization indicates that when Pt/$SnO_2$ sample is calcined at $400^{\circ}C$, the Cl content associated with the Pt phase diminishes and the part of Pt is moved into $SnO_2$ support. This results in the enhancement of gas sensitivity. After the reactor with a Pt/$SnO_2$ sample was run with a flow rate of 30 sccm (a mixture of 0.5% $H_2$ in $_N2$) for a while, the resistance of $SnO_2$ was saturated, but the $SnO_2$ kept absorbing $H_2$ gas. This indicates that the surface state was saturated. For the 14 ppm $H_2$ gas, the sensitivity of Pt/$SnO_2$ devices was about 81% at an operating temperature of $300^{\circ}C$.